Class 257/E31.02 - For device having potential or surface barrier (EPO)

Subclass of Class 257 - Active solid-state devices (e.g., transistors, solid-state diodes)
Definition: This subclass is indented under subclass E31.019. This subclass
No. of patents: 19
Last issue date: 06/26/2007

Number	Title	Issue Date
7235419	Method of making a memory cell An inverted PCRAM cell is formed by plating the bottom electrode, made of copper for example, with a conductive material, such as silver. Chalcogenide material is disposed over the plated electrode and subjected to a conversion process so that ions from the plated m...	06/26/2007
6104046	Dual-band infrared sensing material array and focal plane array A dual color focal plane array includes a sensing material array (SMA) backed by a readout multiplexer unit (RMU). The SMA includes two interleaved sets of pixels. Each pixel of the first set, sensitive only in a primary band, includes a QWIP backed by a ...	08/15/2000
5939733	Compound semiconductor device having a group III-V compound semiconductor layer containing therein T1 and As A compound semiconductor device includes a substrate and a group III-V compound semiconductor layer provided on the substrate, wherein the group III-V compound semiconductor layer contains As as a group V element and Tl as a group III element....	08/17/1999
5847397	Photodetectors using III-V nitrides A bandpass photodetector using a III-V nitride and having predetermined electrical properties. The bandpass photodetector detects electromagnetic radiation between a lower transition wavelength and an upper transition wavelength. That detector comprises t...	12/08/1998
5726462	Semiconductor structures having electrically insulating and conducting portions formed from an AlSb-alloy layer A semiconductor structure. The semiconductor structure comprises a plurality of semiconductor layers formed on a substrate including at least one layer of a III-V compound semiconductor alloy comprising aluminum (Al) and antimony (Sb), with at least a par...	03/10/1998
5677538	Photodetectors using III-V nitrides A photodetector using a III-V nitride and having predetermined electrical properties is disclosed. The photodetector includes a substrate with interdigitated electrodes formed on its surface. The substrate has a sapphire base layer, a buffer layer formed ...	10/14/1997
5449943	Visible and infrared indium antimonide (INSB) photodetector with non-flashing light receiving surface The light receiving or back-side surface (22) of an indium antimonide (InSb) photodetector device (10) substrate (12) is cleaned to remove all oxides of indium and antimony therefrom. Passivation and/or partially visible light blocking layers (26, 28) are...	09/12/1995
5024706	Pin heterojunction photovoltaic elements with polycrystal AlP(H,F) semiconductor film A pin heterojunction photovoltaic element which generates photoelectromotive force by the junction of a p-type semiconductor layer, an i-type semiconductor layer and an n-type semiconductor layer, characterized in that at least one of said p-type and n-ty...	06/18/1991
5007971	Pin heterojunction photovoltaic elements with polycrystal BP(H,F) semiconductor film A pin heterojunction photovoltaic element which generates photoelectromotive force by the junction of a p-type semiconductor layer, an i-type semiconductor layer and an n-type semiconductor layer, characterized that at least one of said p-type and n-type ...	04/16/1991
5002618	Pin heterojunction photovoltaic elements with polycrystal BAs(H,F) semiconductor film A pin heterojunction photovoltaic element which generates photoelectromotive force by the junction of a p-type semiconductor layer, an i-type semiconductor layer and an n-type semiconductor layer, characterized in that at least one of said p-type and n-ty...	03/26/1991
4985742	High temperature semiconductor devices having at least one gallium nitride layer A device having high temperature operating characteristics is provided by depositing n-type cubic gallium nitride on n-type cubic silicon carbide to provide an ohmic contact or electrode. High temperature operating characteristics are also provided in a d...	01/15/1991
4694318	Sawtooth photodetector A structure having a sawtooth graded bandgap region between two layers having the same conductivity type is useful as a photodetector....	09/15/1987
4657603	Method for the manufacture of gallium arsenide thin film solar cells A method for the manufacture of gallium arsenide thin film solar cells on inexpensive substrate material whereby an intermediate layer of highly doped, amorphous germanium is employed in order to promote the growth of the gallium arsenide layers. A high-e...	04/14/1987
4618024	Moving seismic source system for use in water-covered areas A moving seismic source system for the use in water-covered areas comprising a conventional source and streamer cable means with multiple receiver, and additionally includes between the source and receivers a volume of the body of water containing a small...	10/21/1986
4477964	Method of making p-i-n photodiodes Photodiodes (10) are fabricated in a single step diffusion process which exploits the characteristic of certain acceptors to form an anomalous diffusion profile (VI) including shallow and deep fronts (VIa and b) joined by an upwardly concave segment (VIc)...	10/23/1984
4450460	Magnetic-infrared-emitting diode A plate of a semiconductor having a narrow energy gap such as InSb, is applied with a magnetic field in parallel therewith and further supplied with a current in parallel therewith also as well as across the magnetic field, whereby an infrared radiation c...	05/22/1984
4443809	p-i-n Photodiodes Photodiodes (10) are fabricated in a single step diffusion process which exploits the characteristic of certain acceptors to form an anomalous diffusion profile (VI) including shallow and deep fronts (VIa and b) joined by an upwardly concave segment (VIc)...	04/17/1984
4286277	Planar indium antimonide diode array and method of manufacture An improved diode array and method of manufacture is provided by the diffon of cadmium from an indium-cadmium alloy through a silicon diode mask into bulk indium-antimonide to form a planar structure....	08/25/1981
3976872	Gallium phosphide photodetector having an as-grown surface and producing an output from radiation having energies of 2.2 eV to 3.8 eV Anomalously large photoresponse to radiation of energies between about 2.8 eV and about 3.8 eV has been observed in certain gallium phosphide photodetectors having an "as-grown" surface. This photoresponse is believed to be due to the low density of recom...	08/24/1976

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Class 257/E31.02 - For device having potential or surface barrier (EPO)