Celebrity Inventors
Comic actor Danny Kaye received patent D166,807 for the co-design of "Blowout Toy or the Like". It's similar to one of those toys that unravels when you blow into at a birthday party except Kaye's has three blowouts going in different directions, not just one.
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| Number | Title | Issue Date |
| 7436045 | Gallium nitride-based semiconductor device A gallium nitride-based semiconductor device has a p-type layer that is a gallium nitride (GaN) compound semiconductor layer containing a p-type impurity and exhibiting p-type conduction. The p-type layer includes a top portion and an inner portion located under the... | 10/14/2008 |
| 7196399 | Epitaxially grown nitride-based compound semiconductor crystal substrate structure with low dislocation density A metal layer is formed directly on a nitride-based compound semiconductor base layer over a substrate body. The metal layer includes at least one metal exhibiting an atomic interaction, with assistance of a heat treatment, to atoms constituting the base layer to pr... | 03/27/2007 |
| 7132677 | Super bright light emitting diode of nanorod array structure having InGaN quantum well and method for manufacturing the same An GaN light emitting diode (LED) having a nanorod (or, nanowire) structure is disclosed. The GaN LED employs GaN nanorods in which a n-type GaN nanorod, an InGaN quantum well and a p-type GaN nanorod are subsequently formed in a longitudinal direction by inserting ... | 11/07/2006 |
| 6635559 | Formation of insulating aluminum oxide in semiconductor substrates The present invention provides methods and apparatus for creating insulating layers in Group III-V compound semiconductor structures having aluminum oxide with a substantially stoichiometric compositions. Such insulating layers find applications in a vari... | 10/21/2003 |
| 6326649 | Pin photodiode having a wide bandwidth A PIN photodiode comprising a p region containing a p type dopant, an n region containing an n type dopant, an i region positioned intermediate the p region and the n region, and a relatively thick, undoped buffer region positioned between the n region an... | 12/04/2001 |
| 5920409 | Optoelectronic devices using persistent photoconductivity A compound semiconductor that is suitably doped to exhibit the DX effect is irradiated with an optical beam of spatially varying intensity whereby localized regions of persistently higher conductivity and lower refractive index are created in the semicond... | 07/06/1999 |
| 5497029 | Tin-indium antimonide infrared detector A compound semiconductor device suitable for an infrared ray detector comprises a substrate composed of indium antimonide (InSb), a first conductive layer deposited on the substrate and composed of tin-indium antimonide represented by the formula Snx... | 03/05/1996 |
