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| Number | Title | Issue Date |
| 7388276 | Metal-insulator varactor devices A varactor is configured with first and second conducting layers, spaced apart from one another such that a given voltage can be applied across the first and second conducting layers. Further, an insulator arrangement includes at least one insulator layer disposed b... | 06/17/2008 |
| 7388247 | High precision microelectromechanical capacitor with programmable voltage source A high precision microelectromechanical capacitor with programmable voltage source includes a monolithic MEMS device having a capacitance actuator, a trim capacitor, and a high precision, programmable voltage source. The trim capacitor has a variable capacitance val... | 06/17/2008 |
| 7378327 | Method for fabricating a junction varactor with high Q factor A junction varactor includes a gate finger lying across an ion well of a semiconductor substrate; a gate dielectric situated between the gate finger and the ion well; a first ion diffusion region with first conductivity type located in the ion well at one side of th... | 05/27/2008 |
| 7335956 | Capacitor device with vertically arranged capacitor regions of various kinds A capacitor device selectively combines MOM, MIM and varactor regions in the same layout area of an IC. Two or more types of capacitor regions arranged vertically on a substrate to form the capacitor device. This increase the capacitance per unit of the capacitor de... | 02/26/2008 |
| 7259418 | Semiconductor device including a MISFET and a MIS capacitor A semiconductor device comprises varactor regions Va and transistor regions Tr. An active region for a varactor is formed with a substrate contact impurity diffusion region obtained by doping an N well region with N-type impurity at a relatively high concentration. ... | 08/21/2007 |
| 7235862 | Gate-enhanced junction varactor A semiconductor junction varactor utilizes gate enhancement for enabling the varactor to achieve a high ratio of maximum capacitance to minimum capacitance. ... | 06/26/2007 |
| 6703681 | Variable-capacitance capacitor The invention concerns a variable capacitance capacitor comprising a periodic structure of raised zones (5) separated by recesses (6) formed in a type N semiconductor substrate (1). The walls of the raised zones and the base of the recesses are coated wit... | 03/09/2004 |
| 6686640 | Varactor having improved Q-factor and method of fabricating the same using SiGe heterojunction bipolar transistor A varactor includes a semiconductor substrate of a first conductivity type, a high-concentration buried collector region of a second conductivity type formed in an upper portion of the semiconductor substrate, a collector region of the second conductivity... | 02/03/2004 |
| 6673265 | Antimony-based heterostructure varactor diode with bandgap engineered quantum well electrodes The present invention provides a varactor diode for frequency multipliers at submillimeter wave frequencies and above. Functionally the new diode replaces the conventional heterostructure barrier varactor diode. Two important features of the antimony-base... | 01/06/2004 |
| 6653716 | Varactor and method of forming a varactor with an increased linear tuning range The linear tuning range of a semiconductor varactor is substantially increased by forming a lightly-doped drain region of a first conductivity type in a semiconductor material of a second conductivity type between a heavily-doped diffusion of the second c... | 11/25/2003 |
| 6642607 | Semiconductor device A variable capacitor includes an N+ layer including a variable capacitance region, a P+ layer epitaxially grown on the N+ layer and formed from a SiGe film and a Si film, and a P-type electrode. An NPN-HBT (Hetero-junction... | 11/04/2003 |
| 6608747 | Variable-capacitance device and voltage-controlled oscillator A variable-capacitance device includes first and second variable-capacitance elements which are connected in parallel to each other. Each of the first and variable-capacitance elements include gate, source and drain regions and operates in response to a c... | 08/19/2003 |
| 6559024 | Method of fabricating a variable capacity diode having a hyperabrupt junction profile A method of fabricating a hyperabrupt junction varactor diode structure comprises the steps of forming a non-uniformly doped n-type, hyperabrupt cathode region in a layer of semiconductor material and depositing, by ultra high vacuum chemical vapor deposi... | 05/06/2003 |
| 6552406 | SiGe transistor, varactor and p-i-n velocity saturated ballasting element for BiCMOS peripheral circuits and ESD networks An SiGe device configured to exhibit high velocity saturation resistance characteristic for buffering large voltages at low currents, wherein for circuit applications, the SiGe device is connected in series with a circuit element for protection of the cir... | 04/22/2003 |
| 6521506 | Varactors for CMOS and BiCMOS technologies Varactors are provided which have a high tunability and/or a high quality factor associated therewith as well as methods for fabricating the same. One type of varactor disclosed is a quasi hyper-abrupt base-collector junction varactor which includes a sub... | 02/18/2003 |
| 6465830 | RF voltage controlled capacitor on thick-film SOI A voltage controlled capacitor sandwiched between a buried oxide and a shallow trench insulator to form a near ideal P+ to n-well diode with minimal parasitic capacitance and resistance.... | 10/15/2002 |
| 6444504 | Multilayer ZnO polycrystallin diode A method of manufacturing a multilayer ZnO polycrystalline diode that protects against electrostatic discharges, over-current, and voltage surges overcoming the aforementioned drawbacks is provided. The present invention further includes preparing a plura... | 09/03/2002 |
| 6387769 | Method of producing a schottky varicap A method of producing a Schottky varicap (25) including: (a) providing an epitaxial layer (12) on a semiconductor substrate (1); (b) providing an insulating layer including an oxide layer and a nitride layer on a predetermined area of the surface of the epitaxial l... | 05/14/2002 |
| 6380600 | Micro-electromechanical arrangement The present invention refers to a variable capacitor comprising a first conductive layer, a second conductive layer and a semiconductor layer, the first and second layers being arranged to be displaced relative to each other under the influence of an elec... | 04/30/2002 |
| 6331716 | Variable capacity device with quantum-wave interference layers A variable capacity device having an nin, pip, nn- p, np- p, or nip junction whose middle layer is constituted by a quantum-wave interference layer with plural periods of a first layer W and a second layer B as a unit. The second lay... | 12/18/2001 |
| 6316819 | Multilayer ZnO polycrystalline diode A multilayer ZnO polycrystalline diode that protects against electrostatic discharges, over-current, and voltage surges is provided. The polycrystalline diode includes a block having a plurality of polycrystalline layers in parallel having a first lateral... | 11/13/2001 |
| 6228734 | Method of manufacturing a capacitance semi-conductor device A variable capacitance semiconductor device (10) such as a varactor diode, is formed to have a plurality of openings (13), such as a plurality of trenches, that cause the depletion regions (16) to overlap. This overlap results in a rapid change of capacit... | 05/08/2001 |
| 6037650 | Variable capacitance semiconductor device The semiconductor device comprises a low-conductivity or insulating layer (5) on one surface of which is formed a conducting section (6) while the other face is provided with a hole- or electron-type semiconductor layer (1) with an ohmic contact. A semico... | 03/14/2000 |
| 5914513 | Electronically tunable capacitor A tunable capacitor includes a first capacitor formed from semiconductor material and having a first terminal defining an anode, and a second capacitor integrally formed with the first capacitor from semiconductor material, the second capacitor being oper... | 06/22/1999 |
| 5915187 | Method of manufacturing a semiconductor device with a pn junction provided through epitaxy The invention relates to a method of manufacturing a semiconductor device with a pn junction, whereby an epitaxial layer (2) with a first zone (3) of a first conductivity type and with a second zone (4) of a second conductivity type opposed to the first i... | 06/22/1999 |
| 5854117 | Method of manufacturing a varicap diode, a varicap diode, a receiver device, and a TV receiver set The invention relates to a method of manufacturing a varicap diode whereby a silicon substrate with an epitaxial layer of a first conductivity type is provided with a first zone through the provision of dopant atoms of a first conductivity type in the epi... | 12/29/1998 |
| 5825075 | Variable capacitance diode device and method of manufacturing same When a variable capacitance diode device is formed on each of chips obtained by cutting off a wafer, the capacitance values of the diode devices formed on the chips disperse for each wafer due to change in the manufacturing process conditions. To reduced ... | 10/20/1998 |
| 5789801 | Varactor with electrostatic barrier A varactor comprising a substrate of semiconductor material on which is grown both an electrostatic barrier having a first layer of material doped with donor impurities and a second layer of material doped with acceptor impurities and a depletable layer. ... | 08/04/1998 |
| 5747865 | Varactor diode controllable by surface layout design An area-variable varactor diode is disclosed, in which the capacitance can be arbitrarily varied under an applied bias voltage. The area-variable varactor diode is characterized in that, in order to ensure freedom to designing the epi-layer, to obtain the... | 05/05/1998 |
| 5714797 | Variable capacitance semiconductor diode A semiconductor body has a first region of one conductivity type coupled to a first electrode. A second region of the opposite conductivity type is coupled to a second electrode and is provided within the first region to form a first pn junction with the ... | 02/03/1998 |
| 5680073 | Controlled semiconductor capacitors A controlled capacitor system, which includes a capacitor element (C1) and a forward-biased diode element (D2) connected in series with the capacitor element (C1). The system is such that the diode element (D2) has a capacitance which is less than the cap... | 10/21/1997 |
| 5627402 | Variable-capacitance device and semiconductor integrated circuit device having such variable-capacitance device A variable-capacitance device has an n-type diffusion layer which has an impurity concentration profile such that a region where the impurity concentration remains substantially constant and a region where the impurity concentration changes abruptly are a... | 05/06/1997 |
| 5557140 | Process tolerant, high-voltage, bi-level capacitance varactor diode A doping profile is disclosed for realizing a varactor diode that exhibits a high breakdown voltage VBR, e.g.,>100 volts, and a capacitance which has a bi-level characteristic. In particular, the capacitance has a Cmax level and a C | 09/17/1996 |
| 5506442 | Variable-capacitance device and semiconductor integrated circuit device having such variable-capacitance device A variable-capacitance device has an n-type diffusion layer which has an impurity concentration profile such that a region where the impurity concentration remains substantially constant and a region where the impurity concentration changes abruptly are a... | 04/09/1996 |
| 5338966 | Variable capacitance diode device There is provided a variable capacitance diode device. The device comprises a semiconductor substrate of a first conductive type, an epitaxial layer of the first conductive type with a high specific resistance formed on the semiconductor substrate, a firs... | 08/16/1994 |
| 5336923 | Varactor diode having a stepped capacitance-voltage profile A varactor diode having a stepped capacitance-voltage profile, formed in heterostructural integrated circuit technology. Several layers in the diode structure have pulse doping to confine conduction in the diode to a sheet of charge that provides the step... | 08/09/1994 |
| 5283462 | Integrated distributed inductive-capacitive network An integrated-distributed-inductive-capacitive network (100) having a high dielectric electronically-tunable semiconductor integrated capacitor. The network (100) also includes a conductive layer (126) formed on the high dielectric semiconductor integrate... | 02/01/1994 |
| 5278444 | Planar varactor frequency multiplier devices with blocking barrier A planar frequency tripler comprised of two semiconductor diode structures connected back-to-back by an n+ doped layer (N+) of semiconductor material utilizes an n doped semiconductor material for a drift region (N) over the back con... | 01/11/1994 |
| 5220193 | Variable-capacitance diode device with common electrode A plurality of variable-capacitance diode elements are formed in the top of a semiconductor substrate. The rear surface of the substrate is connected to a first lead frame that acts as a common electrode for one electrode from each of the variable-capacit... | 06/15/1993 |
| 5166857 | Electronically tunable capacitor switch An integrated switch (100) includes a first input port (102), a second input port (112) and an output port (106). The integrated switch (100) comprises a first electronically-tunable integrated capacitor (104) having a control line (108) for selectively c... | 11/24/1992 |
