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| Number | Title | Issue Date |
| 7432528 | TFD LCD panel Active devices in a thin film diode (TFD) liquid crystal display (LCD) panel used to control liquid crystal are formed by a metal layer, a transparent conductive layer, and an insulating layer sequentially on a substrate, wherein the metal layer is used as transmitt... | 10/07/2008 |
| 7432548 | Silicon lanthanide oxynitride films Electronic apparatus and methods of forming the electronic apparatus include a silicon lanthanide oxynitride film on a substrate for use in a variety of electronic systems. The silicon lanthanide oxynitride film may be arranged as a layered structure having one or m... | 10/07/2008 |
| 7329939 | Metal-insulator-metal capacitor and method of fabricating same A metal-insulator-metal (MIM) capacitor including a metal layer, an insulating layer formed on the metal layer, at least a first opening and at least a second opening formed in the first insultaing layer, a dielectric layer formed in the first opening, a conductive ... | 02/12/2008 |
| 7279392 | Thin film structure, capacitor, and methods for forming the same A thin film structure and a capacitor using the film structure and methods for forming the same. The thin film structure may include a first film formed on a substrate using a first reactant and an oxidant for oxidizing the first reactant. A second film may be forme... | 10/09/2007 |
| 7276776 | Semiconductor device A semiconductor device includes a semiconductor substrate including a main surface; a plurality of first interconnections formed in a capacitance forming region defined on the main surface and extending in a predetermined direction; a plurality of second interconnec... | 10/02/2007 |
| 7253463 | Semiconductor memory device and method of manufacturing the same A semiconductor memory device includes a semi-conductor substrate, a MOS transistor formed on the semiconductor substrate and including a pair of impurity regions as a source and a drain, and a gate electrode, a first conductive plug formed in contact with an upper ... | 08/07/2007 |
| 7244999 | Capacitor applicable to a device requiring large capacitance A capacitor includes a first electrode and a second electrode arranged so that a main surface of the first electrode opposes a main surface of the second electrode, a first pseudo electrode layer disposed on the main surface of the first electrode, and a dielectric ... | 07/17/2007 |
| 7230292 | Stud electrode and process for making same A process of making a stud capacitor structure is disclosed. The process includes embedding the stud in a dielectric stack. In one embodiment, the process includes forming an electrically conductive seed film in a contact corridor of the dielectric stack. A storage ... | 06/12/2007 |
| 7209340 | Semiconductor device and MIM capacitor An MIM capacitor comprises first and second conductor patterns embedded in a first interlayer insulation film so as to extend continuously in a mutually opposing relationship and forming a part of a comb-shaped capacitor pattern, and third and fourth conductor patte... | 04/24/2007 |
| 7164188 | Buried conductor patterns formed by surface transformation of empty spaces in solid state materials A plurality of buried conductors and/or buried plate patterns formed within a monocrystalline substrate is disclosed. A plurality of empty-spaced buried patterns are formed by drilling holes in the monocrystalline substrate and annealing the monocrystalline substrat... | 01/16/2007 |
| 7145198 | Compositions for thin-film capacitance device, high-dielectric constant insulating film, thin-film capacitance device, and thin-film multilayer capacitor A thin-film capacitor(2) in which a lower electrode(6), a dielectric thin-film(8), and an upper electrode(10) are formed in order on a substrate(4). The dielectric thin-film(8) is made of a composition for thin-film capacita... | 12/05/2006 |
| 7126809 | Semiconductor device and MIM capacitor An MIM capacitor comprises first and second conductor patterns embedded in a first interlayer insulation film so as to extend continuously in a mutually opposing relationship and forming a part of a comb-shaped capacitor pattern, and third and fourth conductor patte... | 10/24/2006 |
| 6590246 | Structures and methods for improved capacitor cells in integrated circuits Systems, devices, structures, and methods are described that inhibit atomic migration that creates an open contact between a metallization layer and a conductive layer of a semiconductor structure. A layer of an inhibiting substance may be used to inhibit... | 07/08/2003 |
| 6544832 | Method of fabricating a stack capacitor DRAM A DRAM capacitor contact comprised of a silicon oxide layer with a trench having sidewalls and a form in the silicon oxide layer. A dielectric liner is coated on the sidewalls of the trench. A metal layer is then deposited between the sidewalls and polish... | 04/08/2003 |
| 6461982 | Methods for forming a dielectric film A method of forming a high dielectric oxide film includes forming a high dielectric oxide film on a surface. The high dielectric oxide film has a dielectric constant greater than about 4 and includes a plurality of oxygen vacancies present during the form... | 10/08/2002 |
| 6410370 | Capacitor for a semiconductor device A semiconductor device comprises a substrate such as a semiconductor wafer having a major surface, a first conductive layer formed over the major surface, and a second conductive layer formed over the first conductive layer with the first and second condu... | 06/25/2002 |
| 6400552 | Capacitor with conductively doped Si-Ge alloy electrode Capacitors and methods of forming capacitors are disclosed. In one implementation, a capacitor includes a capacitor dielectric layer including Ta2 O5 formed over a first capacitor electrode. A second capacitor electrode is formed ove... | 06/04/2002 |
| 6376304 | Semiconductor memory device and a method for fabricating the same A semiconductor memory device and a method of fabricating the same are provided, in which an interlayer film which only covers a peripheral circuit region except a memory cell array is formed above the peripheral circuit region to reduce a topological dif... | 04/23/2002 |
| 6348705 | Low temperature process for high density thin film integrated capacitors and amorphously frustrated ferroelectric materials therefor A fully amorphous thin film material that is related to ferroelectric compositions which is grown at low temperature, e.g., below 400° C., to yield a material with voltage independent capacitance, capacitance density of from about 1000 to about 10000 nF/... | 02/19/2002 |
| 6337216 | Methods of forming ferroelectric memory cells A method of fabricating A ferroelectric memory cell composed of an MOS transistor and A ferroelectric capacitor formed over A semiconductor substrate, comprises the steps of forming A contact hole through an insulating layer to form A contact plug to elec... | 01/08/2002 |
| 6325017 | Apparatus for forming a high dielectric film An apparatus for forming a high dielectric oxide film includes a controllable atomic oxygen source and a vaporized precursor source. A deposition chamber for receiving the atomic oxygen from the atomic oxygen source and vaporized precursor from the vapori... | 12/04/2001 |
| 6326316 | Method of manufacturing semiconductor devices Disclosed is a semiconductor device, comprising a semiconductor substrate, a cell transistor formed in the semiconductor substrate, an interlayer dielectric film in which is formed a contact hole communicating with a part of the cell transistor, a contact... | 12/04/2001 |
| 6323512 | Nonvolatile ferroelectric capacitor and nonvolatile ferroelectric memory A nonvolatile ferroelectric capacitor comprising Bi4-x Ax Ti3 O12 thin film which is obtained by substituting at least some atoms of nonvolatile element A such as La for volatile Bi atoms in Bi4 Ti | 11/27/2001 |
| 6323057 | Method of producing a thin-film capacitor A thin-film capacitor having a perovskite-structured polycrystalline oxide thin-film as its dielectric, that exhibits an excellent insulation property is provided. This capacitor comprises a perovskite-structured, polycrystalline oxide thin-film, and top ... | 11/27/2001 |
| 6287934 | Capacitor structure of semiconductor memory cell and method for fabricating capacitor structure of semiconductor cell A capacitor structure in a semiconductor memory cell includes a lower electrode formed on a base body, a capacitor insulation film which is a ferroelectric thin film formed on the lower electrode, and an upper electrode formed on the capacitor insulation ... | 09/11/2001 |
| 6281023 | Completely encapsulated top electrode of a ferroelectric capacitor using a lead-enhanced encapsulation layer A ferroelectric capacitor includes a bottom electrode, a top electrode, and a ferroelectric layer located between the top and bottom electrodes that extends to completely encapsulate the top electrode, except for a contact hole to allow metalization of th... | 08/28/2001 |
| 6265755 | Semiconductor integrated circuit comprising MIS capacitors A semiconductor integrated circuit having an MIS (metal-insulator silicon) capacitor. A first capacitor and a second capacitor are connected in series between a substrate terminal and the MIS capacitor. A power supply is connected between the first and se... | 07/24/2001 |
| 6262450 | DRAM stack capacitor with vias and conductive connection extending from above conductive lines to the substrate A DRAM capacitor contact comprised of a silicon oxide layer with a trench having sidewalls and a form in the silicon oxide layer. A dielectric liner is coated on the sidewalls of the trench. A metal layer is then deposited between the sidewalls and polish... | 07/17/2001 |
| 6259149 | Fully isolated thin-film trench capacitor A process for forming an isolated thin-film trench capacitor includes forming a first trench in a substrate and filling it with an electrically insulating material. A trench capacitor is formed in the first trench by forming first and second pluralities o... | 07/10/2001 |
| 6246085 | Semiconductor device having a through-hole of a two-level structure A semiconductor memory device comprises a bottom electrode of a capacitor connected to a source region of a semiconductor substrate through a contact plug formed in a portion of a through-hole. The remaining portion of the through-hole has a side-wall fil... | 06/12/2001 |
| 6225658 | Semiconductor device manufacture method and semiconductor device comprising capacitor and MISFET A gate insulating film is formed on the surface of active regions of a semiconductor substrate, and a first polysilicon film is deposited on the semiconductor substrate. Impurities are selectively doped into the first silicon film in an area where a capac... | 05/01/2001 |
| 6222245 | High capacity capacitor and corresponding manufacturing process The invention relates to a high-capacitance capacitor which is monolithically integratable on a semiconductor substrate doped with a first type of dopant and accommodating a diffusion well which is doped with a second type of dopant and has a first active... | 04/24/2001 |
| 6218723 | Integrated capacitor with high voltage linearity and low series resistance A capacitor integrated on a silicon substrate includes a first electrode made of highly doped polysilicon, a thin silicon oxide layer, a second electrode made of polysilicon and a silicide layer covering the second electrode. The second electrode has a hi... | 04/17/2001 |
| 6211005 | Methods of fabricating integrated circuit ferroelectric memory devices including a material layer on the upper electrodes of the ferroelectric capacitors thereof Integrated circuit ferroelectric memory devices include an integrated circuit substrate which includes a cell region and a periphery region. A plurality of ferroelectric memory cells are formed in the cell region, including a plurality of ferroelectric ca... | 04/03/2001 |
| 6211542 | Completely encapsulated top electrode of a ferroelectric capacitor using a lead-enhanced escapsulation layer A ferroelectric capacitor includes a bottom electrode, a top electrode, and a ferroelectric layer located between the top and bottom electrodes that extends to completely encapsulate the top electrode, except for a contact hole to allow metalization of th... | 04/03/2001 |
| 6191443 | Capacitors, methods of forming capacitors, and DRAM memory cells Capacitors and methods of forming capacitors are disclosed. In one implementation, a capacitor comprises a capacitor dielectric layer comprising Ta2 O5 formed over a first capacitor electrode. A second capacitor electrode is formed o... | 02/20/2001 |
| 6184550 | Ternary nitride-carbide barrier layers A microelectronic structure including adjacent material layers susceptible of adverse interaction in contact with one another, and a barrier layer interposed between said adjacent material layers, wherein said barrier layer comprises a binary, ternary or ... | 02/06/2001 |
| 6150184 | Method of fabricating partially or completely encapsulated top electrode of a ferroelectric capacitor A ferroelectric capacitor includes a bottom electrode, a top electrode, an a ferroelectric layer located between the top and bottom electrodes that extends to completely encapsulate the top electrode, except for a contact hole to allow metalization of the... | 11/21/2000 |
| 6150684 | Thin-film capacitor and method of producing same A thin-film capacitor having a perovskite-structured polycrystalline oxide thin-film as its dielectric, that exhibits an excellent insulation property is provided. This capacitor comprises a perovskite-structured, polycrystalline oxide thin-film, and top ... | 11/21/2000 |
| 6141204 | Capacitor constructions and semiconductor processing method of forming capacitor constructions A capacitor construction includes, i) a dense mass of electrically insulative oxide; ii) an electrically conductive inner capacitor plate overlying and contacting the electrically insulative oxide mass; iii) a capacitor dielectric layer overlying the inne... | 10/31/2000 |
