Class 257/E29.342 - Capacitor with potential barrier or surface barrier (EPO)

Subclass of Class 257 - Active solid-state devices (e.g., transistors, solid-state diodes)
Definition: This subclass is indented under subclass E29.325. This subclass
No. of patents: 25
Last issue date: 06/24/2008

Number	Title	Issue Date
7391090	Systems and methods for electrically coupling wires and conductors A first device includes a micrometer-scale or smaller geometry first conductor. A second device includes a micrometer-scale or smaller second conductor. An actuator the first and second devices relative to each other between first and second positions. Signals are s...	06/24/2008
7294905	Thin film capacitor and electronic circuit component A thin film capacitor comprising a lower electrode formed on a predetermined surface, a dielectric layer formed on the lower electrode, and an upper electrode formed on the dielectric layer, wherein the end portion of the lower electrode is further covered by an ins...	11/13/2007
7230292	Stud electrode and process for making same A process of making a stud capacitor structure is disclosed. The process includes embedding the stud in a dielectric stack. In one embodiment, the process includes forming an electrically conductive seed film in a contact corridor of the dielectric stack. A storage ...	06/12/2007
7205192	Semiconductor memory device capable of preventing oxidation of plug and method for fabricating the same A semiconductor device and a fabrication method thereof provides a plug structure composed of a diffusion barrier layer formed at the bottom and on the sides of a contact hole and an oxidation barrier layer formed on the diffusion barrier layer that fills up the ins...	04/17/2007
7190015	Semiconductor device and method of manufacturing the same A semiconductor device including a semiconductor substrate, a capacitor formed above the semiconductor substrate, a first interlayer insulating film formed above the capacitor and having a trench, a wiring formed above the capacitor and formed in the trench, the wir...	03/13/2007
6653161	Method and apparatus for forming a capacitive structure including single crystal silicon A capacitive structure including single crystal silicon and an insulating layer in a semiconductor substrate. One embodiment of the present invention includes an optical switching device having one or more capacitive structures including single crystal si...	11/25/2003
6573588	Capacitance element A P well region formed on a buried N well region and a n+ active region that are connected each other through a lead wire, serve as one terminal T1, and a gate electrode and a buried N well region that are connected each other through a leading N well reg...	06/03/2003
6541840	On-chip capacitor An on-chip capacitor is provided with a P-type silicon substrate, a bottom N-well region formed on said P-type silicon substrate, mutually adjacent first P-well and first N-well regions formed on said bottom N-well region, a first electrode formed on said...	04/01/2003
6417558	Semiconductor device having a reduced parasitic capacitance bonding pad structure There is provided a semiconductor device that has a reduced parasitic capacitance bonding pad structure using a silicon-on-insulator substrate. In the semiconductor device according to the present invention, a pn junction is formed by forming a semiconduc...	07/09/2002
6410379	Method of forming a submerged semiconductor structure A method of forming a submerged semiconductor structure is provided. According to one embodiment, a recessed area is formed on the surface of a wafer of first conductivity type. A dielectric layer is then formed on the surface of the wafer and recessed ar...	06/25/2002
6335896	Dynamic random access memory A capacitor memory data storage system of reading, writing and refreshing which uses short bit line segments separated by pass transistors to allow smaller capacitors and faster speeds than the prior art....	01/01/2002
5828098	Semiconductor capacitor dielectric having various grain sizes This invention relates to a semiconductor device with embedded capacitor elements of which capacitor insulation layer is made of ferroelectric layer or dielectric layer of high dielectric constant, and its manufacturing method. This invention is made in o...	10/27/1998
5796671	Dynamic random access memory A DRAM that has an amplifier built into the cell, which gives the same output signal on the read bit line regardless of the size of the storage capacitor. The memory includes short bit line segments in the refresh mode with the provision of interconnectin...	08/18/1998
5714907	Apparatus for providing digitally-adjustable floating MOS capacitance A method and an apparatus for providing an adjustable floating capacitance between a first node and a second node in an integrated circuit. First and second transistors having commonly coupled gates are coupled between the input and output nodes of a digi...	02/03/1998
5641702	Method of making semiconductor integrated-circuit capacitor A semiconductor integrated-circuit capacitor comprises a lower electrode formed on a semiconductor substrate, a capacitor insulating film formed on the lower electrode, and an upper electrode formed on the capacitor insulating film. The capacitor insulati...	06/24/1997
5572052	Electronic device using zirconate titanate and barium titanate ferroelectrics in insulating layer In an electronic device using lead zirconate titanate (PZT) or lanthanum lead zirconate titanate (PLZT) as the main insulating material, a PZT film or a PLZT film is formed on a sub-insulating layer consisting essentially of lead titanate, lanthanum lead ...	11/05/1996
5440157	Semiconductor integrated-circuit capacitor having a carbon film electrode A semiconductor integrated-circuit capacitor comprises a lower electrode formed on a semiconductor substrate, a capacitor insulating film formed on the lower electrode, and an upper electrode formed on the capacitor insulating film. The capacitor insulati...	08/08/1995
5365477	Dynamic random access memory device A vertically integrated DRAM cell having a storage time of at least 4.5 hours at room temperature, formed from a wide-bandgap semiconductor such as GaAs or AlGaAs, in which an n-p-n bipolar access transistor is merged with a p-n-p storage capacitor, with ...	11/15/1994
5225708	Semiconductor junction capacitance element with breakdown voltage protection An semiconductor junction capacitance element equipped with the function of preventing electrostatic breakdown is disclosed in which a main PN junction adapted to serve as variable capacitance diode is defined in an epitaxial layer of a first conductivity...	07/06/1993
4853348	Process for manufacture of a semiconductor memory device A semiconductor memory device such as a MOS dynamic RAM comprises transistor portions (2, 3 and 5) for writing and reading a signal and capacitor portions (1, 2, 6 and 9) by pn junction for storing a signal. The capacitor portions have preferably as large...	08/01/1989
4763179	Semiconductor memory device A semiconductor memory device such as a MOS dynamic RAM comprises transistor portions (2, 3 and 5) for writing and reading a signal and capacitor portions (1, 2, 6 and 9) by pn junction for storing a signal. The capacitor portions have preferably as large...	08/09/1988
4630082	Semiconductor device with multi-electrode construction equivalent to variable capacitance diode A semiconductor device with a multi-electrode construction equivalent to a conventional variable capacitance diode in function is disclosed. The semiconductor device is characterized in that a capacitance read-out portion with a capacitance read-out elect...	12/16/1986
4535349	Non-volatile memory cell using a crystalline storage element with capacitively coupled sensing The present invention relates to storage devices which utilize a floating single crystal electrode onto which elcetrons are injected to vary the capacitance of a device which includes capacitance contributions from a pair of insulator regions and that res...	08/13/1985
4141027	IGFET integrated circuit memory cell An IGFET integrated circuit memory cell structure utilizing a capacitor with increased charge storage capability, and a method making the same. The capacitor includes a high impurity concentration region having the same conductivity type as the substrate....	02/20/1979
4125933	IGFET Integrated circuit memory cell An IGFET integrated circuit memory cell structure utilizing a capacitor with increased charge storage capability, and a method making the same. The capacitor includes a high impurity concentration region having the same conductivity type as the substrate....	11/21/1978

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Class 257/E29.342 - Capacitor with potential barrier or surface barrier (EPO)