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| Number | Title | Issue Date |
| 7361943 | Silicon-based backward diodes for zero-biased square law detection and detector arrays of same A Si-based diode (10, 10′, 100) is formed by epitaxially depositing a Si-based diode structure on a silicon substrate. The Si-based diode structure includes a Si-based pn junction (16, 16′, 18, 18′, 30, 32, 160, 161) having a backward diode curre... | 04/22/2008 |
| 6608386 | Sub-nanoscale electronic devices and processes A new class of electronic systems, wherein microelectronic semiconductor integrated circuit devices are integrated on a common substrate with molecular electronic devices.... | 08/19/2003 |
| 6573527 | Quantum semiconductor device including quantum dots and a fabrication process thereof A quantum semiconductor device includes intermediate layers of a first semiconductor crystal having a first lattice constant and stacked repeatedly, and a plurality of quantum dots of a second semiconductor crystal having a second lattice constant differe... | 06/03/2003 |
| 6573528 | Detector diode with internal calibration structure This patent is generally directed towards a method and device for providing a diode structure that has a barrier height that may be readily engineered with a series resistance that may be independently varied while simultaneously providing for the complet... | 06/03/2003 |
| 6566284 | Method of manufacture for 80 nanometer diameter resonant tunneling diode with improved peak-to-valley ratio and resonant tunneling diode therefrom A sub-micron, on the order of 80-nanometer diameter, resonant tunneling diode having a peak-to-valley ratio of approximately 5.1 to 1, and a method for its manufacture. The invention is unique in that its performance characteristics are unmatched in compa... | 05/20/2003 |
| 6521042 | Semiconductor growth method Molecular beam epitaxy (202) with growing layer thickness control (206) by feedback of mass spectrometer (204) signals based on a process model. Examples include III-V compound structures with multiple AlAs, InGaAs, and InAs layers as used in resonant tun... | 02/18/2003 |
| 6465804 | High power bipolar transistor with emitter current density limiter A heterojunction bipolar transistor (HBT) having an emitter structure capable of reducing the current crowding effect and preventing thermal instabilities is disclosed, wherein a negative differential resistance. (NDR) element is added to the layer struct... | 10/15/2002 |
| 6448161 | Silicon based vertical tunneling memory cell A method of forming a memory device from a single transistor and a single RTD structure is provided. The method comprises the steps of forming a silicon base, an oxide layer over the base and a top thin silicon layer over the oxide layer. The top silicon ... | 09/10/2002 |
| 6376858 | Resonant tunneling diode with adjusted effective masses A tunnel diode has a quantum well having at least one layer of semiconductor material. The tunnel diode also has a pair of injection layers on either side of the quantum well. The injection layers comprise a collector layer and an emitter layer. A barrier... | 04/23/2002 |
| 6320200 | Sub-nanoscale electronic devices and processes An integrated circuit structure including a plurality of transistors; a plurality of thin-film conductor interconnects, interconnected to form electronic circuits in a predetermined electrical configuration; and a plurality of pairs of contact pads, conne... | 11/20/2001 |
| 6303941 | Integrated asymmetric resonant tunneling diode pair circuit Presented is an integrated asymmetric resonant tunneling diode pair circuit exhibiting current-voltage characteristics providing multistable states which may be tailored for multistable solutions. Also presented are apparatus incorporating the invention t... | 10/16/2001 |
| 6291832 | Resonant tunneling diode latch A method/system for forming a resonant tunneling diode latch is disclosed. The method/system comprises the steps of forming a gate on a silicon substrate, the silicon substrate having at least one SOI layer disposed therein, providing an oxide spacer over... | 09/18/2001 |
| 6255150 | Use of crystalline SiOx barriers for Si-based resonant tunneling diodes A method of forming a crystalline silicon well over a silicon oxide barrier layer, preferably for use in formation of a tunneling diode. A silicon substrate is provided of predetermined crystallographic orientation. A layer of crystallographic silicon oxi... | 07/03/2001 |
| 6248621 | Method of growing high-quality crystalline silicon quantum wells for RTD structures A method of forming a crystalline silicon well over a perovskite barrier layer, preferably for use in formation of a resonant tunneling diode. A silicon substrate (1) is provided of predetermined crystallographic orientation. A layer of crystallographic p... | 06/19/2001 |
| 6239450 | Negative differential resistance device based on tunneling through microclusters, and method therefor A solid state electronic device exhibiting negative differential resistance is fabricated by depositing a thin layer of amorphous silicon on a single crystal substrate, doped N+. The amorphous silicon is simultaneously crystallized and oxidized... | 05/29/2001 |
| 6229153 | High peak current density resonant tunneling diode A resonant tunneling diode is produced in a gallium arsenide material system formed with barrier layers of AlGaAs with a quantum well layer of low band-gap material between them. The material of the well is selected to adjust the second energy level to th... | 05/08/2001 |
| 6218677 | III-V nitride resonant tunneling A resonant tunneling diode (400) made of a quantum well (406) with tunneling barriers (404, 408) made of two different materials such as calcium fluoride (408) and silicon dioxide (404). The calcium fluoride provides lattice match between the emitter (410... | 04/17/2001 |
| 6211531 | Controllable conduction device A controllable conduction device in the form of a transistor comprises source and drain regions 5, 2 between which extends a conduction path P for charge carriers, a gate 4 for controlling charge carrier flow along the conduction path and a multiple layer... | 04/03/2001 |
| 6194303 | Memory device A memory device consists of an array of resonant tunnel diodes in the form of pillars which are formed by selective etching. Each pillar includes first and second barriers (B1, B2) disposed between terminal regions (T1, T2) and a conductive region (CR1) b... | 02/27/2001 |
| 6103583 | Method for producing quantization functional device A quantization functional device includes: a silicon thin layer having a first surface and a second surface each made of a predetermined crystal surface, and the silicon thin layer being formed of single crystalline silicon having a thickness sufficiently... | 08/15/2000 |
| 6091077 | MIS SOI semiconductor device with RTD and/or HET The invention provides a semiconductor device, having a variety of functions such as a bistable memory and a logic circuit, in which a MOS semiconductor element, a resonance tunnel diode, a hot electron transistor and the like are formed on a common subst... | 07/18/2000 |
| 6077760 | Structure and method of manufacturing single-crystal silicon carbide/single-crystal silicon heterojunctions with negative differential resistance characteristics A method of manufacturing single-crystal silicon carbide/single-crystal silicon heterojunctions with negative differential resistance, by which one or more single-crystal silicon carbide/single-crystal silicon layer(s) with different types of dopants is/a... | 06/20/2000 |
| 6069368 | Method for growing high-quality crystalline Si quantum wells for RTD structures A method of forming a crystalline silicon well over a perovskite barrier layer, preferably for use in formation of a resonant tunneling diode. A silicon substrate (1) is provided of predetermined crystallographic orientation. A layer of crystallographic p... | 05/30/2000 |
| 6060723 | Controllable conduction device A controllable conduction device in the form of a transistor comprises source and drain regions 5, 2 between which extends a conduction path P for charge carriers, a gate 4 for controlling charge carrier flow along the conduction path and a multiple layer... | 05/09/2000 |
| 6015978 | Resonance tunnel device The method for forming a semiconductor microstructure of this invention includes the steps of: forming a mask pattern having a first opening and a second opening on a substrate having a semiconductor layer as an upper portion thereof; and selectively etch... | 01/18/2000 |
| 5985025 | Semiconductor growth method Molecular beam epitaxy (202) with growing layer thickness control (206) by feedback of mass spectrometer (204) signals based on a process model. Examples include III-V compound structures with multiple AlAs, InGaAs, and InAs layers as used in resonant tun... | 11/16/1999 |
| 5981969 | Multiple peak resonant tunneling diode A multiple peak resonant tunneling diode (10) includes multiple vertical semiconductor structures (12, 13). The vertical structures (12, 13) include a resonant tunneling diode having a predetermined cross-sectional area and a series resistor of a predeter... | 11/09/1999 |
| 5956568 | Methods of fabricating and contacting ultra-small semiconductor devices A method of fabricating ultra-small semiconductor devices including providing a mesa on a substrate. A plurality of overlying layers of semiconductor material are grown in overlying relationship to the mesa so that a perpendicular discontinuity is produce... | 09/21/1999 |
| 5945687 | Quantization functional device, quantization functional apparatus utilizing the same, and method for producing the same A quantization functional device includes: a silicon thin layer having a first surface and a second surface each made of a predetermined crystal surface, and the silicon thin layer being formed of single crystalline silicon having a thickness sufficiently... | 08/31/1999 |
| 5942952 | VCO with multiple negative differential resistance devices A VCO includes a transistor having a plurality of negative differential resistance devices coupled in series to the source terminal of the transistor, with each of the devices having a negative differential resistance operating region. Biasing circuits ar... | 08/24/1999 |
| 5939941 | High efficiency power amplifier using HITFET driver circuit A high efficiency power amplifier includes an integrated circuit with a heterojunction interband tunneling field effect transistor (HITFET) amplifier coupled to receive high frequency (into the GHz) RF signals. The HITFET amplifier is constructed to recei... | 08/17/1999 |
| 5920231 | Negative differential resistance amplifier There is provided a negative differential resistance amplifier comprising a negative differential resistance transistor having negative input conductance by utilizing resonant tunneling effect. The transistor is electrically connected to a signal source c... | 07/06/1999 |
| 5895934 | Negative differential resistance device based on tunneling through microclusters, and method therefor A solid state electronic device exhibiting negative differential resistance s fabricated by depositing a thin layer of amorphous silicon on a single crystal substrate, doped N+. The amorphous silicon is simultaneously crystallized and oxidized i... | 04/20/1999 |
| 5888852 | Method for forming semiconductor microstructure, semiconductor device fabricated using this method, method for fabricating resonance tunneling device, and resonance tunnel device fabricated by this method The method for forming a semiconductor microstructure of this invention includes the steps of: forming a mask pattern having a first opening and a second opening on a substrate having a semiconductor layer as an upper portion thereof; and selectively etch... | 03/30/1999 |
| 5869845 | Resonant tunneling memory A resonant tunneling diode stack used as a memory cell stack (X0-Xn) with sequential read out of bits of data cells (X1-Xn) by increasing ramp rates to transfer the stored bit to a lowest ramp rate cell (X0).... | 02/09/1999 |
| 5825048 | Semiconductor functional device and electronic circuit provided with the same A semiconductor functional device includes a semi-insulating semiconductor substrate; a resonant tunneling structure which includes, on the substrate, an n-type collector layer, an epitaxial multilayer structure including a double barrier structure consti... | 10/20/1998 |
| 5811832 | Non-volatile memory device A memory device consists of an array of resonant tunnel diodes in the form of pillars which are formed by selective etching. Each pillar includes first and second barriers (B1, B2) disposed between terminal regions (T1, T2) and a conductive region (CR1) b... | 09/22/1998 |
| 5796119 | Silicon resonant tunneling A resonant tunneling diode (400) made of a silicon quantum well (406) with silicon oxide tunneling barriers (404, 408). The tunneling barriers have openings (430) of size smaller than the electron wave packet spread to insure crystal alignment through the... | 08/18/1998 |
| 5770866 | Resonant tunneling electronic device The present invention provides a resonant tunneling electronic device having a plurality of nearly decoupled quantum barrier layers and quantum-well layers alternatively formed between an emitter layer and a collector layer, and has a stacked structure in... | 06/23/1998 |
| 5739544 | Quantization functional device utilizing a resonance tunneling effect and method for producing the same By etching, a first groove and a second groove are formed in a silicon substrate. Surfaces of the side walls of these grooves have a surface orientation of (111). The first and second grooves sandwich a silicon thin plate therebetween, which is formed as ... | 04/14/1998 |
