Did You Know...
...that the inventor of the electric motor was a blacksmith named Thomas Davenport? Described as "a brilliantly unsuccessful inventor", Davenport invented the first rotary electric motor. In 1836 he headed out -- on foot -- from his Vermont home to file a patent application at the Patent Office in Washington, D.C. By the time he got there, he had squandered away his money and couldn't afford the $30 filing fee so he turned around and went home. When he later mailed in his application with money he'd raised, the Patent office was destroyed in a fire. He did finally get credit for his invention on Feb. 5, 1837.
PatentStorm News
Make the Most of Our Site
See this month's Top Inventors and Most Cited Patents.
Stay on top of the latest innovations by subscribing to an RSS feed.
Registered users: Manage your profile.
| Number | Title | Issue Date |
| 7385262 | Band-structure modulation of nano-structures in an electric field A method to electronically modulate the energy gap and band-structure of semiconducting carbon nanotubes is proposed. Results show that the energy gap of a semiconducting nanotube can be narrowed when the nanotube is placed in an electric field perpendicular to the ... | 06/10/2008 |
| 7323709 | Method for increasing efficiency of thermotunnel devices The present invention comprises a tunneling device in which the collector electrode is modified so that tunneling of higher energy electrons from the emitter electrode to the collector electrode is enhanced. In one embodiment, the collector electrode is contacted wi... | 01/29/2008 |
| 6686240 | Semiconductor memory device having a multiple tunnel junction layer pattern and method of fabricating the same A semiconductor memory device and fabricating method thereof, wherein the semiconductor memory device includes first and second conductive regions formed in parallel at predetermined regions of a semiconductor substrate, a storage node and a multiple tunn... | 02/03/2004 |
| 6677207 | Vanishingly small integrated circuit diode An embodiment of the instant invention is a method of implementing a vanishingly small integrated circuit diode comprising the steps of: forming an area of a thin dielectric film (201 of FIG. 2) over a conductive silicon surface ( 10 of FIG. 2) of one con... | 01/13/2004 |
| 6635907 | Type II interband heterostructure backward diodes A backward diode including a heterostructure consisting of a first layer of InAs and second layer of GaSb or InGaSb with an interface layer consisting of an aluminum antimonide compound is presented. It is also disclosed that the presence of AlSb in the i... | 10/21/2003 |
| 6635921 | Semiconductor memory device having a multiple tunnel junction layer pattern and method of fabricating the same A semiconductor memory device and fabricating method thereof, wherein the semiconductor memory device includes first and second conductive regions formed in parallel at predetermined regions of a semiconductor substrate, a storage node and a multiple tunn... | 10/21/2003 |
| 6617643 | Low power tunneling metal-oxide-semiconductor (MOS) device A three terminal tunneling device that has a smaller voltage transition between off-current and on-current states and which also has less dependence on the lateral dimensions of the device. The device is a hybrid between a MOS transistor, a gated diode an... | 09/09/2003 |
| 6600177 | Boron-carbide and boron rich rhombohedral based transistors and tunnel diodes The present invention relates to the fabrication of a boron carbide/boron semiconductor devices. The results suggest that with respect to the approximately 2 eV band gap pure boron material, 0.9 eV band gap boron carbide (B5 C) acts as a p-type... | 07/29/2003 |
| 6507043 | Epitaxially-grown backward diode A method of epitaxially growing backward diodes as well as apparatus grown by the method are presented herein. More specifically, the invention utilizes epitaxial-growth techniques such as molecular beam epitaxy in order to produce a thin, highly doped la... | 01/14/2003 |
| 6472683 | Semiconductor quantum oscillation device A semiconductor quantum oscillation device, which realizes Bloch oscillation on the basis of a novel carrier injection scheme, comprises a multilayer semiconductor structure and a means for applying a voltage to said structure. The multilayer structure co... | 10/29/2002 |
| 6440786 | Boron-carbide and boron rich rhobohedral based transistors and tunnel diodes The present invention relates to the fabrication of a boron carbide/boron semiconductor devices. The results suggest that with respect to the approximately 2 eV band gap pure boron material, 0.9 eV band gap boron carbide (B5 C) acts as a p-type... | 08/27/2002 |
| 6344673 | Multilayered quantum conducting barrier structures A multilayered quantum conducting barrier (MQCB) structure formed on two semiconductor regions having a different crystalline nature and a thin layer of an insulating material sandwiched between said semiconductor regions. An undoped amorphous silicon lay... | 02/05/2002 |
| 6303942 | Multi-layer charge injection barrier and uses thereof The present invention relates to a tunnel barrier and to uses thereof, particularly in conjunction with devices and integrated circuits fabricated with silicon substrates, and including the preparation of tunnel diodes, dielectric structures, transistors,... | 10/16/2001 |
| 6204513 | Heterostructure interband tunneling diode A heterostructure interband tunneling diode includes a contact layer comprising indium gallium arsenide of a first conductivity type, an injection layer comprising indium gallium arsenide of a second conductivity type, a first doped layer of the first con... | 03/20/2001 |
| 6025611 | Boron-carbide and boron rich rhobohedral based transistors and tunnel diodes The present invention relates to the fabrication of a boron carbide/boron diode on an aluminum substrate, and a boron carbide/boron junction field effect transistor. Our results suggest that with respect to the approximately 2 eV band gap pure boron mater... | 02/15/2000 |
| 5930133 | Rectifying device for achieving a high power efficiency A tunnel diode is used as a rectifying device. The tunnel diode is so implemented as to suppress a flow of a current relative to an applied forward voltage of AC which is greater than a voltage at a peak value of a tunnel current. Stated in another word, ... | 07/27/1999 |
| 5731598 | Single electron tunnel device and method for fabricating the same The single electron tunnel device of this invention includes: a multiple tunnel junction layer including multiple tunnel junctions; and first and second electrodes for applying a voltage to the multiple tunnel junction layer, wherein the multiple tunnel j... | 03/24/1998 |
| 5679963 | Semiconductor tunnel junction with enhancement layer The incorporation of a pseudomorphic GaAsSb layer in a runnel diode structure affords a new degree of freedom in designing runnel junctions for p-n junction device interconnects. Previously only doping levels could be varied to control the tunneling prope... | 10/21/1997 |
| 5670790 | Electronic device An electronic device which includes, a couple of first conduction regions which are capable of confining carriers, a second conduction region having a higher energy level than those of the first conduction regions, and a first electrode for impressing a v... | 09/23/1997 |
| 5659180 | Heterojunction interband tunnel diodes with improved P/V current ratios A heterojunction tunnel diode with first and second barrier layers, the first barrier layer including aluminum antimonide arsenide. A quantum well formation is sandwiched between the first and second barrier layers, and includes first and second quantum w... | 08/19/1997 |
| 5541422 | Tunnel diode with several permanent switching states The invention relates to a tunnel diode provided with two metallically conducting electrodes (1, 2) with an insulating dielectric (3) in between, which forms a barrier with a barrier level for electrons and which has a thickness such that electrons can tu... | 07/30/1996 |
| 5512773 | Switching element with memory provided with Schottky tunnelling barrier A switching element is provided with two electrodes (1, 2) with a semiconducting dielectric (3) therebetween, one electrode (2) having a material which forms a Schottky contact with the semiconducting dielectric (3), while a space charge region (3') of th... | 04/30/1996 |
| 5449922 | Bipolar heterojunction diode A bipolar heterojunction diode has an anode (11, 41), a blocking layer (12, 42) and a junction region (13, 14, 43). a heterojunction (32, 58) in the junction region (13, 14, 43) is utilized to create a misalignment between the band gap of the anode (11, 4... | 09/12/1995 |
| 5440148 | Quantum operational device A quantum operational device includes a plurality of quantum boxes arranged in a plurality of stages isolated by a distance which permits tunnelling of electrons or holes through the distance, uses as bit information the presence or absence of an electron... | 08/08/1995 |
| 5422496 | Interband single-electron tunnel transistor and integrated circuit An interband single-electron tunnel/transistor utilizes an interband single-electron tunneling phenomenon between a valence band and a conduction band through a p-n junction. The transistor includes the combination of microcapacities as fundamental consti... | 06/06/1995 |
| 5359257 | Ballistic electron, solid state cathode A majority carrier, solid state cathode uses ballistic behavior to provide a highly coherent (and modulated) electron beam, with a large current density and expected efficiencies greater than fifty percent.... | 10/25/1994 |
| 5258625 | Interband single-electron tunnel transistor and integrated circuit An interband single-electron tunnel transistor utilizes an interband single-electron tunneling phenomenon between a valence band and a conduction band through a p-n junction. The transistor includes the combination of microcapacities as fundamental consti... | 11/02/1993 |
| 5225369 | Tunnel diode detector for microwave frequency applications A tunnel diode is disclosed having a highly P-doped layer of indium gallium arsenide formed on a highly N-doped layer of indium gallium arsenide which is supported on a semi-insulating substrate of indium phosphide. In an alternative embodiment, a tunnel ... | 07/06/1993 |
| 5093692 | Tunnel diode detector for microwave frequency applications A tunnel diode is disclosed having a highly P-doped layer of indium gallium arsenide formed on a highly N-doped layer of indium gallium arsenide which is supported on a semi-insulating substrate of indium phosphide. In an alternative embodiment, a tunnel ... | 03/03/1992 |
| 5021863 | Semiconductor quantum effect device having negative differential resistance characteristics A semiconductor quantum effect device having negative differential resistance characteristics includes a composite potential barrier layer including a first potential barrier layer and a second potential barrier layer; a carrier injection side semiconduct... | 06/04/1991 |
| 4975750 | Semiconductor device A semiconductor device having a sandwich construction formed by causing a semiconductor region and an opposed region to face each other across a thin film which is made of a substance having a wider forbidden band gap than that of the semiconductor region... | 12/04/1990 |
| 4788579 | Semiconductor superlattice A semiconductor device comprises two layers of semiconductor material each of different conductivity type, with a region of semiconductor material sandwiched between the layers. The material of which the region is formed is of the same composition as the ... | 11/29/1988 |
| 4769644 | Cellular automata devices Noise and fault tolerant devices made of cellular automata are disclosed. Preferred embodiments include cellular automata with updating rules that set a cell to a first state if more than a threshold number of adjacent cells are in the first state and wit... | 09/06/1988 |
| 4760430 | Semiconductor device and method for producing a far infrared and/or microwave radiation source utilizing radiative tunnelling transitions The present invention relates to a novel semiconductor heterostructure device characterized by improved coupling of tunnelling current to an electromagnetic field in the region between doped conductive layers of the device comprising a first conductive co... | 07/26/1988 |
| 4667211 | Millimeter wave-infrared bloch oscillator/detector An electronic oscillator being operable to detect millimeter wave and infrared frequency output signals over the range of 1-1000 GHz consists of a semiconductor device having a structure comprised of a first planar doped barrier region separated from a se... | 05/19/1987 |
| 4645707 | Semiconductor devices A semiconductor device incorporating two superlattices in the GaAs/AlGaAs system separated by a relatively thick layer of GaAlAs is described. The device displays negative differential conductance.... | 02/24/1987 |
