Did You Know...
...Chester Carlson was a patent agent who tired of having to make multiple copies of patent applications using the only duplication method available at the time: carbon paper. In 1959 he came up with a new copying system and took it to IBM for evaluation. The "experts" at IBM determined potential sales to be only 5,000 units because people wouldn't want to use a bulky machine when they had carbon paper. Carlson's invention was the xerography process, the company founded on the system is Xerox.
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| Number | Title | Issue Date |
| 7436039 | Gallium nitride semiconductor device A gallium nitride based semiconductor Schottky diode fabricated from a n+ doped GaN layer having a thickness between one and six microns disposed on a sapphire substrate; an n− doped GaN layer having a thickness greater than one micron disposed on said n+ GaN laye... | 10/14/2008 |
| 7432579 | Semiconductor device with horizontal MOSFET and Schottky barrier diode provided on single substrate A MOS field-effect transistor includes a semiconductor substrate of a first-conductivity type, a semiconductor layer of the first-conductivity type, a source region of a second-conductivity type, a first drain region of the second-conductivity type, a resurf layer o... | 10/07/2008 |
| 7408212 | Stackable resistive cross-point memory with schottky diode isolation An electrically programmable, non-volatile resistive memory includes an array of memory cells, a plurality of bit lines, and a plurality of word lines. Each memory cell comprises a resistive element and a Schottky diode coupled in series and having first and second ... | 08/05/2008 |
| 7391056 | Chemical sensor using chemically induced electron-hole production at a Schottky barrier Electron-hole production at a Schottky barrier has recently been observed experimentally as a result of chemical processes. This conversion of chemical energy to electronic energy may serve as a basic link between chemistry and electronics and offers the potential f... | 06/24/2008 |
| 7388271 | Schottky diode with minimal vertical current flow A method of forming a rectifying diode. The method comprises providing a first semiconductor region of a first conductivity type and having a first dopant concentration and forming a second semiconductor region in the first semiconductor region. The second semicondu... | 06/17/2008 |
| 7385271 | Chemical sensor using chemically induced electron-hole production at a schottky barrier Electro-hole production at a Schottky barrier has recently been observed experimentally as a result of chemical processes. This conversion of chemical energy to electronic energy may serve as a basic link between chemistry and electronics and offers the potential fo... | 06/10/2008 |
| 7375407 | Schottky barrier diode and integrated circuit using the same A Schottky barrier diode includes a first semiconductor layer and a second semiconductor layer successively formed above a substrate; and a high-resistance region formed in the first semiconductor layer and the second semiconductor layer and having higher resistance... | 05/20/2008 |
| 7323402 | Trench Schottky barrier diode with differential oxide thickness A fabrication process for a trench Schottky diode with differential oxide thickness within the trenches includes forming a first nitride layer on a substrate surface and subsequently forming a plurality of trenches in the substrate including, possibly, a termination... | 01/29/2008 |
| 7276771 | Diode and method for manufacturing the same A diode is provided which includes a first-conductivity-type cathode layer, a first-conductivity-type drift layer placed on the cathode region and having a lower concentration than the cathode layer, a generally ring-like second-conductivity-type ring region formed ... | 10/02/2007 |
| 7274083 | Semiconductor device with surge current protection and method of making the same A wide bandgap semiconductor device with surge current protection and a method of making the device are described. The device comprises a low doped n-type region formed by plasma etching through the first epitaxial layer grown on a heavily doped n-type substrate and... | 09/25/2007 |
| 7238976 | Schottky barrier rectifier and method of manufacturing the same A Schottky barrier rectifier, in accordance with embodiments of the present invention, includes a first conductive layer and a semiconductor. The semiconductor includes a first doped region, a second doped region and a plurality of third doped regions. The second do... | 07/03/2007 |
| 7173291 | Vertical protecting element formed in semiconductor substrate and semiconductor device using the same Between a terminal of an element to be protected and a GND terminal, a protecting element is connected, which includes a first n+ region, an insulating region and a second n+ region. The first n+ region is provided to have a columnar shape in a depth direction of a ... | 02/06/2007 |
| 7141861 | Semiconductor device and manufacturing method there A problem in related art according to which an increase in leak current cannot be avoided in order to obtain a low forward voltage VF as forward voltage VF and reverse leak current IR characteristics of a Schottky barrier diode are in a trade-off relationship is her... | 11/28/2006 |
| 6703276 | Passivated silicon carbide devices with low leakage current and method of fabricating Semiconductor power devices with improved electrical characteristics are disclosed including rectifying contacts on a specially prepared semiconductor surface with little or no additional exposure to other chemical treatments, with oxide passivation and e... | 03/09/2004 |
| 6696728 | Super-junction semiconductor device To provide a super-junction MOSFET reducing the tradeoff relation between the on-resistance and the breakdown voltage greatly and having a peripheral structure, which facilitates reducing the leakage current in the OFF-state thereof and stabilizing the br... | 02/24/2004 |
| 6693308 | Power SiC devices having raised guard rings Silicon carbide semiconductor power devices having epitaxially grown guard rings edge termination structure are provided. Forming the claimed guard rings from an epitaxially grown SiC layer avoids the traditional problems associated with implantation of g... | 02/17/2004 |
| 6690037 | Field plated Schottky diode A Schottky diode is fabricated by a sequence of fabrication by a sequence of fabrication steps. An active region of a semiconductor substrate is defined in which a Schottky diode is fabricated. At least first and second layers of insulating material are a... | 02/10/2004 |
| 6690035 | Semiconductor device having an active region of alternating layers An active region 30 is formed on a substrate 3, which is made of SiC, GaN, or GaAs, for example, by alternately layering undoped layers 22 with a thickness of for example about 50 nm and n-type doped layers 23 with a thickness (for example, about 10 nm) t... | 02/10/2004 |
| 6686614 | Semiconductor switching element with integrated Schottky diode and process for producing the switching element and diode The invention relates to an integrated semiconductor switching element, that includes a semiconductor body having a first connection zone of a first conduction type and a second connection zone of the first conduction type. A body zone of a second conduct... | 02/03/2004 |
| 6682968 | Manufacturing method of Schottky barrier diode A Schottky barrier diode has a Schottky electrode formed on an operation region of a GaAs substrate and an ohmic electrode surrounding the Schottky electrode. The ohmic electrode is disposed directly on an impurity-implanted region formed on the substrate... | 01/27/2004 |
| 6683347 | Semiconductor device with alternating conductivity type layer and method of manufacturing the same A semiconductor device having an alternating conductivity type layer improves the tradeoff between the on-resistance and the breakdown voltage and facilitates increasing the current capacity by reducing the on- resistance while maintaining a high breakdow... | 01/27/2004 |
| 6673662 | Epitaxial edge termination for silicon carbide Schottky devices and methods of fabricating silicon carbide devices incorporating same Edge termination for a silicon carbide Schottky rectifier is provided by including a silicon carbide epitaxial region on a voltage blocking layer of the Schottky rectifier and adjacent a Schottky contact of the silicon carbide Schottky rectifier. The sili... | 01/06/2004 |
| 6673679 | Semiconductor device with alternating conductivity type layer and method of manufacturing the same A semiconductor device has an alternating conductivity type layer that improves the tradeoff relation between the ON-resistance and the breakdown voltage and a method of manufacturing such a semiconductor device. The alternating conductivity type layer is... | 01/06/2004 |
| 6674131 | Semiconductor power device for high-temperature applications In a SiC substrate (10), a first active region (12) composed of n-type heavily doped layers (12a) and undoped layers (12b), which are alternately stacked, and a second active region (13) composed of p-type heavily doped layers (13a) and undoped layers (13... | 01/06/2004 |
| 6670687 | Semiconductor device having silicon carbide layer of predetermined conductivity type and module device having the same A semiconductor device having a silicon carbide layer of a singular conductivity type. The silicon carbide layer includes a surface having a first region, a second region, and a third region sandwiched between the first region and the second region. An an... | 12/30/2003 |
| 6670650 | Power semiconductor rectifier with ring-shaped trenches A high-speed, soft-recovery semiconductor device that reduces leakage current by increasing the Schottky ratio of Schottky contacts to pn junctions. In one embodiment of the present invention, an n- drift layer is formed on an n+ cat... | 12/30/2003 |
| 6656843 | Single mask trench fred with enlarged Schottky area A single mask process is described for making a trench type fast recovery process. The single mask defines slots in a photoresist for locally removing strips of nitride and oxide from atop silicon and for subsequently etching trenches in the silicon. A bo... | 12/02/2003 |
| 6657273 | Termination for high voltage schottky diode A composite field ring for a Schottky diode has a low concentration deep portion to increase breakdown voltage withstand and a high concentration, shallow region to enable minority carrier injection during high forward current conduction. The composite ri... | 12/02/2003 |
| 6656823 | Semiconductor device with schottky contact and method for forming the same Method for forming a Schottky contact in a semiconductor device includes a step of preparing an n type GaN group compound semiconductor layer, such as Alx Ga1-x N and Inx Ga1-x N. At least one metal layer includ... | 12/02/2003 |
| 6653707 | Low leakage Schottky diode A preferred embodiment of the present invention provides a Schottky diode (100) formed from a conductive anode contact (102), a semiconductor junction layer (104) supporting the conductive contact (102) and a base layer ring (108) formed around at least a... | 11/25/2003 |
| 6649995 | Semiconductor device and method of manufacturing the same A Schottky diode that achieves a predetermined reverse-direction breakdown voltage even if a state of a surface in a vicinity of a Schottky junction interface changes due to a welding of a bonding wire. The semiconductor device having the Schottky junctio... | 11/18/2003 |
| 6627967 | Schottky barrier diode A Schottky barrier diode has a Schottky contact region formed in an n epitaxial layer disposed on a GaAs substrate and an ohmic electrode surrounding the Schottky contact region. The ohmic electrode is disposed directly on an impurity-implanted region for... | 09/30/2003 |
| 6624472 | Semiconductor device with voltage sustaining zone A semiconductor body has first and second opposed major surfaces. A first region meets the first major surface and at least one second region meets the second major surface. The semiconductor body provides a voltage-sustaining zone between the first and s... | 09/23/2003 |
| 6621107 | Trench DMOS transistor with embedded trench schottky rectifier A merged device is that comprises a plurality of MOSFET cells and a plurality of Schottky rectifier cells, as well as a method of designing and making the same. According to an embodiment of the invention, the MOSFET cells comprise: (a) a source region of... | 09/16/2003 |
| 6597050 | Method of contacting a silicide-based schottky diode and diode so formed A method of contacting a silicide-based Schottky diode including the step of providing a contact to the silicide that is fully bordered with respect to an internal edge of the guard ring area. A Schottky diode having silicide contacting a guard ring of th... | 07/22/2003 |
| 6590240 | Method of manufacturing unipolar components A method of manufacturing a unipolar component of vertical type in a substrate of a first conductivity type, including the steps of: forming trenches in a silicon layer of the first conductivity type; coating the lateral walls of the trenches with a silic... | 07/08/2003 |
| 6583485 | Schottky diode The invention relates to a semiconductor device, in particular a Schottky hybrid diode with a guard ring (S). The semiconductor device comprises a semiconductor substrate (1), an epitaxial layer (2) on which an insulating layer (3) with an opening (10) is... | 06/24/2003 |
| 6580141 | Trench schottky rectifier A Schottky rectifier is provided. The Schottky rectifier comprises: (a) a semiconductor region having first and second opposing faces, with the semiconductor region comprising a cathode region of first conductivity type adjacent the first face and a drift... | 06/17/2003 |
| 6576973 | Schottky diode on a silicon carbide substrate A vertical Schottky diode including an N-type silicon carbide layer of low doping level formed by epitaxy on a silicon carbide substrate of high doping level. The periphery of the active area of the diode is coated with a P-type epitaxial silicon carbide ... | 06/10/2003 |
| 6573128 | Epitaxial edge termination for silicon carbide Schottky devices and methods of fabricating silicon carbide devices incorporating same Edge termination for a silicon carbide Schottky rectifier is provided by including a silicon carbide epitaxial region on a voltage blocking layer of the Schottky rectifier and adjacent a Schottky contact of the silicon carbide Schottky rectifier. The sili... | 06/03/2003 |
