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| Number | Title | Issue Date |
| 7439597 | Poly diode structure for photo diode An integrated circuit device for converting an incident optical signal into an electrical signal comprises a semiconductor substrate, a well region formed inside the semiconductor substrate, a dielectric layer formed over the well region, and a layer of polysilicon ... | 10/21/2008 |
| 7361930 | Method for forming a multiple layer passivation film and a device incorporating the same A method of forming a multiple layer passivation film on a semiconductor device surface comprises placing a semiconductor device in a chemical vapor deposition reactor, introducing a nitrogen source into the reactor, introducing a carbon source into the reactor, dep... | 04/22/2008 |
| 7317242 | Semiconductor device including p-type silicon layer including implanted germanium The invention provides a semiconductor device having a pn diode that includes a p-type SiGe layer and a n-type Si layer junctioned to the p-type SiGe layer. A built-in potential of the pn diode can be reduced, and thus obtaining a diode characteristics with lower im... | 01/08/2008 |
| 7205641 | Polydiode structure for photo diode An integrated circuit device for converting an incident optical signal into an electrical signal comprises a semiconductor substrate, a well region formed inside the semiconductor substrate, a dielectric layer formed over the well region, and a layer of polysilicon ... | 04/17/2007 |
| 7176546 | Diode circuit and method of producing a diode circuit A diode circuit includes a pin diode structure, wherein the n-semiconductor layer is a buried layer, on which the i-area is deposited by an epitaxy method, and wherein a p-semiconductor layer is introduced into the epitaxy layer. A contacting of the p-semiconductor ... | 02/13/2007 |
| 6700180 | Rectifying diode A semiconductor diode has a low bandgap layer (10) and an intermediate region (4) with a plurality of field relief regions (6, 8) extending between the low bandgap layer (10) and a first region (2) of opposite conductivity type. The field relief regions d... | 03/02/2004 |
| 6700140 | Thyristor switch for microwave signals A thyristor for switching microwave signals includes semiconductor layers disposed on a substrate. A first surface of the thyristor defines an anode, and a second surface of the thyristor defines a cathode. The semiconductor layers include at least one se... | 03/02/2004 |
| 6693024 | Semiconductor component with a semiconductor body having a multiplicity of pores and method for fabricating The semiconductor component is fabricated on the basis of a semiconductor body with a first and a second surface. A multiplicity of pores are formed in the semiconductor body. The pores extend into the semiconductor body proceeding from the first surface ... | 02/17/2004 |
| 6693308 | Power SiC devices having raised guard rings Silicon carbide semiconductor power devices having epitaxially grown guard rings edge termination structure are provided. Forming the claimed guard rings from an epitaxially grown SiC layer avoids the traditional problems associated with implantation of g... | 02/17/2004 |
| 6674152 | Bipolar diode A bipolar p-i-n diode has a first (1) and second (5) region of opposite conductivity type and an intermediate drift region (3) between the first and second regions. Trenched field relief regions (14) are arranged to deplete the intermediate drift region (... | 01/06/2004 |
| 6661036 | Semiconductor switches with evenly distributed fine control structures Semiconductor structure configured as a semiconductor switch that can be used in various forms to switch currents. Semiconductor switch comprising non-doped or very lightly doped semiconductor crystal for switching currents in at least one direction at hi... | 12/09/2003 |
| 6660616 | P-i-n transit time silicon-on-insulator device A transit time device (15, 15') in a silicon-on-insulator (SOI) technology is disclosed. An anode region (18) and a cathode region (20) are formed on opposing ends of an epitaxial layer (14), with an intrinsic or lightly-doped region (22) disposed therebe... | 12/09/2003 |
| 6617670 | Surface PIN device A surface PIN (SPIN) device and a method of fabricating such a SPIN device. The SPIN device, when activated, confines carrier injection to a small volume near the surface of the device such that the device is sufficiently conductive to simulate a planar c... | 09/09/2003 |
| 6614087 | Semiconductor device An object is to provide a semiconductor device which is free from such voltage oscillation as may cause malfunction of peripheral equipment. In a semiconductor device having a pin structure, the impurity concentration gradient in an n+ layer (1... | 09/02/2003 |
| 6567046 | Reconfigurable antenna A reconfigurable antenna capable of dynamic reconfigurability of several antenna parameters. Specifically, the present invention is an antenna comprising a plurality of surface PIN devices arranged in a gridlike array. Each of the SPIN devices can be indi... | 05/20/2003 |
| 6555440 | Process for fabricating a top side pitted diode device A method of fabricating a diode device, such as a PIN diode, includes forming top and bottom regions of opposite conductivity types and includes anisotropically etching into the top surface to form a pit having side walls that converge with approach to th... | 04/29/2003 |
| 6552412 | Semiconductor device with quantum-wave interference layers A semiconductor device of a pin junction structure, constituted by a quantum-wave interference layers Q1 to Q4 with plural periods of a pair of a first layer W and a second layer B and middle layers (carrier accumulation layers) C | 04/22/2003 |
| 6495864 | High-voltage semiconductor component, method for the production and use thereof The invention concerns a semiconductor component with at east one lateral region which is provided to accommodate a lateral electric field strength, whereby the semiconductor body within the body and/or in regions proximal to the surface of the semiconduc... | 12/17/2002 |
| 6479840 | Diode Disclosed is an inventive diode which can reduce a stray capacity to improve various characteristics thereof, in which a dielectric layer, a conductive layer and a second dielectric layer are respectively formed by deposition in this order on an upper fac... | 11/12/2002 |
| 6465874 | Power semiconductor rectifier having schottky contact combined with insulation film A semiconductor device has improved reverse recovery characteristics and has greatly reduced the leakage current caused during application of a reverse bias voltage. The semiconductor device according to the invention includes a semiconductor chip having ... | 10/15/2002 |
| 6436784 | Method of forming semiconductor structure Semiconductor structures and a method of forming semiconductor structures The avalanche breakdown characteristics, such as breakdown voltage and impact ionisation coefficient, of a semiconductor structure can be controlled by controlling the Brilluin-zone... | 08/20/2002 |
| 6429500 | Semiconductor pin diode for high frequency applications A microwave PIN diode having an increased intrinsic region volume for storing a charge. A semiconductor substrate has an N+ subcollector/cathode layer which encloses a region of the substrate. An N-skin formed over the interior of enclosed region. An Si l... | 08/06/2002 |
| 6426547 | Lateral polysilicon pin diode and method for so fabricating The invention provides a PIN diode having a laterally extended I-region. The invention also provides a method of fabricating the inventive PIN diode compatible with modern RF technologies such as silicon-germanium BiCMOS processes.... | 07/30/2002 |
| 6417527 | Diode, method for fabricating the diode, and coplanar waveguide The diode of the present invention includes: a cathode electrode and an anode electrode that are disposed on a semi-conductor substrate and are spaced apart from each other; and a shielding metal member placed between the cathode and anode electrodes.... | 07/09/2002 |
| 6410950 | Geometrically coupled field-controlled-injection diode, voltage limiter and freewheeling diode having the geometrically coupled field-controlled-injection diode A pin diode includes an inner zone, a cathode zone and an anode zone. A boundary surface between the inner zone and the anode zone is at least partly curved and/or at least one floating region having the same conduction type and a higher dopant concentrat... | 06/25/2002 |
| 6355971 | Semiconductor switch devices having a region with three distinct zones and their manufacture In a semiconductor switch device such as an NPN transistor (T) or a power switching diode (D), a multiple-zone first region (1) of one conductivity type forms a switchable p-n junction (12) with a second region (2) of opposite conductivity type. In accord... | 03/12/2002 |
| 6351023 | Semiconductor device having ultra-sharp P-N junction and method of manufacturing the same A semiconductor device such as a P-N or P-I-N junction diode, includes a first semiconductor layer having a first conductivity-type and being mounted over a metal address line, and a second semiconductor layer having a second conductivity-type and being m... | 02/26/2002 |
| 6326650 | Method of forming a semiconductor structure Semiconductor structures and a method of forming semiconductor structures The avalanche breakdown characteristics, such as breakdown voltage and impact ionisation coefficient, of a semiconductor structure can be controlled by controlling the Brillouin-zon... | 12/04/2001 |
| 6262466 | Lateral semiconductor structure for forming a temperature-compensated voltage limitation A lateral semiconductor structure having a punch-through diode for forming a temperature-compensated voltage limitation in which the space charge resistance is reduced through a lateral arrangement of preferably annular regions around a base trough. This ... | 07/17/2001 |
| 6218683 | Diode The present invention relates to a diode, and has an object to simultaneously implement a high di/dt capability, a low reverse recovery loss and a low forward voltage and to suppress generation of voltage oscillation. In order to achieve the above-mention... | 04/17/2001 |
| 6188083 | Diodes with quantum-wave interference layers A pin diode, having a p-layer, an n-layer, and an i-layer sandwiched by the p-layer and the n-layer, is constituted by a quantum-wave interference unit with a plurality of pairs of a first layer W and a second layer B. The second layer B has a wider band ... | 02/13/2001 |
| 6180444 | Semiconductor device having ultra-sharp P-N junction and method of manufacturing the same A semiconductor device such as a P-N or P-I-N junction diode, includes a first semiconductor layer having a first conductivity-type and being mounted over a metal address line, and a second semiconductor layer having a second conductivity-type and being m... | 01/30/2001 |
| 6081019 | Semiconductor diode with suppression of auger generation processes A multi-layer Auger suppressed diode having at least two exclusion interfaces and at least two extraction interfaces. A specific embodiment has two composite contacts, each consisting of a heavily doped layer (3, 4) and a buffer layer (8, 9) of lower dope... | 06/27/2000 |
| 6049109 | Silicon on Insulator semiconductor device with increased withstand voltage A power semiconductor device according to the present invention has an SOI substrate formed of a buried silicon oxide film having an uneven surface portion on the surface thereof and an n-type silicon active layer of low impurity concentration formed on t... | 04/11/2000 |
| 5945691 | Semiconductor device for preventing destruction during a turn-off state In order to inhibit destruction during a turn-off state, a cathode electrode (6) is not connected to the overall major surface of a semiconductor substrate (10), but selectively connected to a region which is substantially opposed to an anode electrode (5... | 08/31/1999 |
| 5757065 | High voltage integrated circuit diode with a charge injecting node An integrated CMOS diode with an injection ring which enables construction of an integrated CMOS diode that has the performance characteristics of a high impedance value, when the diode is in the off state, and low impedance, when the diode is in the on s... | 05/26/1998 |
| 5554882 | Integrated trigger injector for avalanche semiconductor switch devices An avalanche semiconductor switch device utilizes trigger input. The integrated trigger input is a charge carrier injector which injects charge carriers directly into the avalanche semiconductor switch device. The avalanche semiconductor switch device inc... | 09/10/1996 |
| 5509105 | Electronic neuron apparatus A multi-well diode is disclosed which can be used with other electronic components as an electronic neuron circuit. The multi-well diode has an S-shaped current-voltage characteristic curve at forward bias whereby it remains in a low conductance state unt... | 04/16/1996 |
| 5508529 | Multi-quantum well injection mode device and associated electronic neuron apparatus A multi-well diode is disclosed which can be used with other electronic components as an electronic neuron circuit. Structural embodiments of the multi-well diode are disclosed having a p-i-n, n-i-n, or p-i-p configurations. In addition, the wells of the ... | 04/16/1996 |
| 5302838 | Multi-quantum well injection mode device A multi-well diode is disclosed which can be used with other electronic components as an electronic neuron circuit. The multi-well diode has an S-shaped current-voltage characteristic curve at forward bias whereby it remains in a low conductance state unt... | 04/12/1994 |
