Class 257/E29.319 - With multiple gate (EPO)

Subclass of Class 257 - Active solid-state devices (e.g., transistors, solid-state diodes)
Definition: This subclass is indented under subclass E29.317. This subclass
No. of patents: 68
Last issue date: 03/25/2008

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Number	Title	Issue Date
7348630	Semiconductor device for high frequency uses and manufacturing method of the same The semiconductor device has a semiconductor substrate, gate electrodes formed above the semiconductor substrate, and a pair of impurity diffusion layers formed in a surface layer of the semiconductor substrate at both sides of each of the gate electrodes. The semic...	03/25/2008
7161197	RF switching circuit for use in mobile communication systems An RF switching circuit according to the present invention includes: a plurality of input/output terminals for inputting and outputting an RF signal; and a switch for opening and closing an electrical connection between the input/output terminals. The switch is cons...	01/09/2007
7091566	Dual gate FinFet A field effect transistor (FET), integrated circuit (IC) chip including the FETs and a method of forming the FETS. Each FET includes a device gate along one side of a semiconductor (e.g., silicon) fin and a back bias gate along an opposite of the fin. Back bias gate...	08/15/2006
6285046	Controllable semiconductor structure with improved switching properties The invention concerns a controllable semiconductor structure comprising a base region (101, 201, 301, 401), a source region (106, 212, 312, 412) and a drain region (107, 213, 313, 413) a conductive duct being provided in the base region between the sourc...	09/04/2001
6262451	Electrode structure for transistors, non-volatile memories and the like An electrode structure for semiconductor devices includes first electrode material positioned in overlying relationship to the surface of a substrate so as to define a first side wall perpendicular thereto. A nonconductive side wall spacer is formed on th...	07/17/2001
6160280	Field effect transistor A field effect transistor structure which can serve as a low noise amplifier. The field effect transistor has a major surface and source and drain regions extending from the major surface into a body of semiconductor material. A channel region is formed i...	12/12/2000
5994725	MOSFET having Schottky gate and bipolar device A semiconductor device having a Schottky gate and a bipolar device. A semiconductor substrate has a surface layer in ohmic contact with the conductor and the deeper layer in Schottky contact with the conductor. The substrate has a recess which reaches int...	11/30/1999
5994727	High performance gaas field effect transistor structure An improved GaAs MESFET includes a source contact ohmically coupled to a buffer layer or substrate to stabilize band bending at the interface of the active layer and buffer layer or substrate when an RF signal is applied to a gate electrode....	11/30/1999
5872369	Solid-state antenna switch and field-effect transistor A field-effect transistor has a covering electrode overlying at least part of the transistor's channel. The covering electrode is formed on an insulating layer that covers the source, gate, and drain of the transistor. One voltage is applied to the coveri...	02/16/1999
5856681	Semiconductor device The present invention relates to a semiconductor device in which an electric resistance in a carrier path is modulated by changing a voltage applied to the carrier path. The semiconductor device is provided with a semiconductor layer in which conductive p...	01/05/1999
5808332	Field-effect semiconductor device A depletion layer forming element, for instance, a low impurity concentration layer, is provided between a gate electrode and a source or drain electrode. The depletion layer forms a surface depletion layer closer to a semiconductor substrate than a deple...	09/15/1998
5804475	Method of forming an interband lateral resonant tunneling transistor This invention describes a nanometer scale interband lateral resonant tunneling transistor, and the method for producing the same, with lateral geometry, good fanout properties and suitable for incorporation into large-scale integrated circuits. The trans...	09/08/1998
5804849	Compound semiconductor device and method of manufacture A MESFET structure (20) and a method that minimizes the effects of processing steps and device performance of the MESFET structure (20). The MESFET structure (20) has a gate (30) positioned over a channel region (28) and between a source region (36) and a...	09/08/1998
5786610	Field effect transistor A field effect transistor includes an active layer having a surface; a source electrode and a drain electrode disposed on the surface of the active layer; a first gate electrode disposed on the surface of the active layer between the source electrode and ...	07/28/1998
5773334	Method of manufacturing a semiconductor device A semiconductor device is manufactured by a process comprising the steps of forming a cover film on a surface of a semiconductor substrate such that the cover film exposes a portion of the surface, covers a remaining portion thereof and has an edge along ...	06/30/1998
5665618	Method of forming an interband lateral resonant tunneling transistor with single narrow gate electrode This invention describes a nanometer scale interband lateral resonant tunneling transistor, and the method for producing the same, with lateral geometry, good fanout properties and suitable for incorporation into large-scale integrated circuits. The trans...	09/09/1997
5654558	Interband lateral resonant tunneling transistor This invention describes a nanometer scale interband lateral resonant tunneling transistor, and the method for producing the same, with lateral geometry, good fanout properties and suitable for incorporation into large-scale integrated circuits. The trans...	08/05/1997
5602501	Mixer circuit using a dual gate field effect transistor In a mixer circuit, a first gate electrode of a dual gate MESFET having a pulse doped structure is connected through a filter to an LO signal input terminal, and a second gate electrode of the dual gate FET is connected through a matching circuit to an RF...	02/11/1997
5455441	Semiconductor device having a structure for accelerating carriers A semiconductor device comprises a channel of a semiconductor material for passing carriers, a carrier injecting part for injecting the carriers into the channel and establishing an ohmic contact with the channel at a first location, a carrier collecting ...	10/03/1995
5428232	Field effect transistor apparatus A dual gate field effect transistor including first and second gates comprises a conductive region, wherein a potential difference between a second gate electrode section and the conductive region is larger than that between the second gate electrode sect...	06/27/1995
5389807	Field effect transistor It is an object of the present invention to provide a dual-gate type MESFET having a high drain breakdown voltage and excellent high-frequency characteristics. A semiconductor substrate used in the present invention is obtained by sequentially forming a n...	02/14/1995
5360755	Method of manufacturing a dual field effect transistor A method of manufacturing a field effect transistor comprises sequentially epitaxially growing on a semi-insulating compound semiconductor substrate an active layer of the first compound semiconductor having a first dopant concentration and a source layer...	11/01/1994
5350702	Method for fabricating a dual-gate metal-semiconductor field effect transistor A dual gate metal semiconductor field effect transistor is disclosed which comprises a semi-insulating compound semiconductor substrate, a first and a second insulating layer in stripe pattern in different width formed on said semiconductor substrate at a...	09/27/1994
5311156	High frequency double pole double throw switch A DPDT switch includes first and second output signal electrodes opposite each other in an active region on a semiconductor substrate, a third output signal electrode opposite the second output signal electrode in the same active region, and first and sec...	05/10/1994
5309007	Junction field effect transistor with lateral gate voltage swing (GVS-JFET) A field effect transistor having a buried gate, and one or more gates disposed along the channel between the source and drain, which cooperate to cause the electric field within the channel along its length to be more uniform, and have a lower field maxim...	05/03/1994
5309006	FET crossbar switch device particularly useful for microwave applications An FET crossbar switch device is implemented by using a split gate electrode and a shared source and drain pad to implement source and drain electrodes on an integrated circuit substrate. First and second inputs to the device are associated with first and...	05/03/1994
5306650	Method of making silicon MESFET for dielectrically isolated integrated circuits A MESFET wherein a Schottky top gate which extends across the channel region between the source and drain regions and beyond sides of the dielectric isolation in which the device is built at two points. The bottom gate also extends beyond the dielectric i...	04/26/1994
5274256	Microwave FET In a dual gate FET of this invention, the number of points for supplying a signal to a first gate electrode and the number of points for supplying a signal to a second gate electrode are set to be optimal values so that a noise index is minimized. A diffe...	12/28/1993
5252842	Low-loss semiconductor device and backside etching method for manufacturing same A semiconductor device has material removed from the back of the substrate and a manufacturing process is provided for manufacturing these devices. In the exemplary embodiment, a GaAs FET chip is formed by a process including the step of etching the GaAs ...	10/12/1993
5225703	Dual field effect transistor structure employing a single source region A field effect transistor comprises a semi-insulating first compound semiconductor substrate having a surface, a first compound semiconductor active layer disposed at the surface of the substrate and having a first dopant concentration, a gate electrode d...	07/06/1993
5079620	Split-gate field effect transistor A field effect transistor having a gate voltage swing in the transistor channel varying as a function of position between the drain and the source. The gate voltage swing in the transistor channel may be made to vary as a function of position by making th...	01/07/1992
5070376	Semiconductor device A semiconductor device includes an FET having side gate electrodes. The FET has a plurality of side gate electrodes, and the side gate electrodes, side gate input terminals and lead wires connecting them are arranged such that a difference between electri...	12/03/1991
5065132	Programmable resistor and an array of the same A programmable resistor 10 is provided having a resistive element 12. Resistive element 12 includes a substrate 26 formed by a layer of semiconductor of a first conductivity-type. A current path 32 is formed in substrate 26 by a layer of semiconductor of ...	11/12/1991
5014108	MESFET for dielectrically isolated integrated circuits A MESFET wherein a Schottky top gate which extends across the channel region between the source and drain regions and beyond sides of the dielectric isolation in which the device is built at two points. The bottom gate also extends beyond the dielectric i...	05/07/1991
5012315	Split-gate field effect transistor A field effect transistor having a gate voltage swing in the transistor channel varying as a function of position between the drain and the source. The gate voltage swing in the transistor channel may be made to vary as a function of position by making th...	04/30/1991
5010377	Isolated gate MESFET and method of trimming A MESFET device is provided wherein the top Schottky gate is electrically isolated from the bottom gate. Methods as described for forming channels self aligned to Schottky top gates and complementary junction field effect transistors. A method is also des...	04/23/1991
5005059	Digital-to-analog converting field effect device and circuitry A field effect device and circuit suitable for providing an analog output signal having a magnitude which is representative of a digital input code having a sequence of bits. The device includes a plurality of gate electrodes located between an input elec...	04/02/1991
5001524	Digitally controlled field effect attenuator devices A variable field effect attenuator suitable for providing digitally controlled attenuation characteristic is disclosed. The attenuator can include a first semiconductor region connected in a series path between the input and output terminals and at least ...	03/19/1991
4998147	Field effect attenuator devices having controlled electrical lengths Overlapping gate electrodes are selectively energized to vary the electrical length and thus the resistance of the conductive path through a field effect attenuator. The electrical width can also be varied to provide additional control over the resistance...	03/05/1991
4977434	Field-effect semiconductor device comprising an ancillary electrode A field-effect transistor comprises an ancillary electrode in addition to the source, gate and drain electrodes. In this device, a semiconducting body bears source, gate and drain metallizations which define a main transistor. The metallization of the dra...	12/11/1990

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Class 257/E29.319 - With multiple gate (EPO)