Class 257/E29.314 - Thin-film JFET (EPO)

Subclass of Class 257 - Active solid-state devices (e.g., transistors, solid-state diodes)
Definition: This subclass is indented under subclass E29.312. This subclass
No. of patents: 23
Last issue date: 08/12/2008

Number	Title	Issue Date
7411231	JFET with drain and/or source modification implant The present invention provides a JFET which receives an additional implant during fabrication, which extends its drain region towards its source region, and/or its source region towards its drain region. The implant reduces the magnitude of the e-field that would ot...	08/12/2008
7397086	Top-gate thin-film transistor A thin-film transistor, such as a top-gate thin-film transistor, is provided herein. The thin-film transistor has a performance-enhancing layer, such as a performance-enhancing bottom layer, comprising a polymer other than a polyimide. In specific embodiments, the p...	07/08/2008
7312481	Reliable high-voltage junction field effect transistor and method of manufacture therefor The present invention provides a high-voltage junction field effect transistor (JFET), a method of manufacture and an integrated circuit including the same. One embodiment of the high-voltage junction field effect transistor (JFET) (300) includes a well regio...	12/25/2007
7288792	Method of manufacturing semiconductor device, method of manufacturing electronic apparatus, semiconductor device, and electronic apparatus Exemplary embodiments of the present invention are intended to provide a semiconductor device that can readily address or achieve high integration. Exemplary embodiments provide a semiconductor device constructed to include a transistor and a multi-layer wiring stru...	10/30/2007
7271412	Active matrix organic light emitting device having series thin film transistor, and fabrication method therefor The series TFT comprises a semiconductor layer including a first body, a second body and a connecting portion serially connecting the first body to the second body. The first body has a first channel region and first source/drain regions positioned at both sides of ...	09/18/2007
7214965	Thin film transistor array panel and method of manufacturing the same A plurality of gate lines having gate electrodes are formed on a substrate and a semiconductor layer is formed on a gate insulating layer covering the gate lines. A plurality of data lines intersecting the gate lines are formed on the gate insulating layer and a plu...	05/08/2007
7038260	Dual gate structure for a FET and method for fabricating same A method for fabricating a dual gate structure for JFETs and MESFETs and the associated devices. Trenches are etched in a semiconductor substrate for fabrication of a gate structure for a JFET or MESFET. A sidewall spacer may be formed on the walls of the trenches t...	05/02/2006
6037618	Intergrated field effect transistor device for high power and voltage amplification of RF signals An integrated transistor device operates with a linear triode vacuum tube like characteristic with a very low output impedance and a large interaction between the gate and drain potentials. The drain current of a first transistor is connected directly to ...	03/14/2000
5973341	Lateral thin-film silicon-on-insulator (SOI) JFET device A lateral thin-film Silicon-On-Insulator (SOI) JFET device includes a semiconductor substrate, a buried insulating on the substrate, and a JFET device in a thin semiconductor layer of a first conductivity type on the buried insulating layer. The device in...	10/26/1999
5786615	Junction field-effect transistor (JFET) semiconductor integrated circuit device including JFET A plurality of JFETs (junction field-effect transistors) can be formed on the same substrate while being electrically separated from each other, and can be also combined with a CMOS (complementary metal-oxide semiconductor). A P- type Si layer ...	07/28/1998
5714777	Si/SiGe vertical junction field effect transistor A junction field effect transistor and method for making is described incorporating horizontal semiconductor layers within an opening to form a channel and a semiconductor layer through which the opening was made which forms a gate electrode surrounding t...	02/03/1998
5559346	Field-effect semiconductor device with increased breakdown voltage A field-effect semiconductor device for reducing on-state source-drain voltage and increasing breakdown voltage, has a one conductivity type semiconductor region, a source region of one conductivity type, a drain region, and gate regions of other conducti...	09/24/1996
5432377	Dielectrically isolated semiconductor device and a method for its manufacture A semiconductor device is supported by a semiconductor body which comprises a substrate, an oxide layer and a weakly doped monocrystalline wafer. Trenches for a dielectrically isolating layer which surrounds a component region are etched in the wafer. A f...	07/11/1995
5420059	Method of making a high performance MESFET with multiple quantum wells A superheterojunction Field Effect Transistor (FET) with a multi-region channel on a Silicon (Si) substrate. The FET is a Metal Semiconductor FET (MESFET) or, alternatively, a Junction FET (JFET). The multi-region channel has: A first region of Si extendi...	05/30/1995
5323020	High performance MESFET with multiple quantum wells A superheterojunction Field Effect Transistor (FET) with a multi-region channel on a Silicon (Si) substrate. The FET is a Metal Semiconductor FET (MESFET) or, alternatively, a Junction FET (JFET). The multi-region channel has: A first region of Si extendi...	06/21/1994
5130770	Integrated circuit in silicon on insulator technology comprising a field effect transistor An integrated circuit in silicon on insulator technology comprises a JFET transistor with an insulated source and drain of one conductivity type in the upper part of a semiconductor island, an upper gate between the source and the drain, a buried insulati...	07/14/1992
5075746	Thin film field effect transistor and a method of manufacturing the same A thin film field effect transistor comprising a source electrode and a drain electrode joined to a first semiconductor layer respectively through first and second portions of a second doped semiconductor layer, a gate insulating layer, and a gate electro...	12/24/1991
4914491	Junction field-effect transistors formed on insulator substrates A junction field effect transistor formed on insulator substrates particularly oxide substrates and having a polysilicon vertical control gate region formed of a cross member and two end members orthogonal thereto. The vertical control gate is formed over...	04/03/1990
4700461	Process for making junction field-effect transistors A self-aligned integrated JFET device is described wherein an oxide extension region and a doped polysilicon gate is used as part of a self-aligned mask to form drain and source regions. Asymmetric JFETs for power circuit applications can be made in accor...	10/20/1987
4611220	Junction-MOS power field effect transistor A thin film insulated gate field effect transistor having an opposite conductivity type island in its channel region. The island is electrically shorted to the transistor gate electrode....	09/09/1986
4523368	Semiconductor devices and manufacturing methods A field effect device having a gate over a portion of a surface of a semiconductor disposed between a source region and a drain region and including a buried doped region having a conductivity type opposite the conductivity type of the semiconductor forme...	06/18/1985
4393578	Method of making silicon-on-sapphire FET Junction and metal-semiconductor field effect transistors have a sapphire substrate to realize isolation and reduced capacitance, and have a self-aligned gate to minimize source parasitic resistance. A lightly doped, opposite conductivity type region unde...	07/19/1983
4136352	Field-effect structures A junction-type field-effect structure has an active layer covered at least in part by a dielectric layer. A metal base is applied to the dielectric layer....	01/23/1979

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Class 257/E29.314 - Thin-film JFET (EPO)