Did You Know...
...that Charles Goodyear performed some of his experiments on rubber while in debtor's prison? He was there so often he referred to it as his "hotel". Chronically in debt because of poor business sense and ill health, Goodyear depended on the generosity of friends and family. Even after he unlocked the secret to vulcanizing rubber, he was unable to improve his financial situation. When he died, his estate was $200,000 in debt.
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| Number | Title | Issue Date |
| 7339212 | p channel filed effect transistor and sensor using the same A p channel field effect transistor in which the sensitivity of an enzyme can be enhanced by immobilizing the enzyme directly on an FET channel surface (diamond surface), as well as a sensor including the same, is provided. A diamond surface (22) having mixed... | 03/04/2008 |
| 7309895 | Semiconductor device An exemplary embodiment includes a semiconductor device. The semiconductor device can include a channel including one or more compounds of the formula AxBxOx, wherein each A is selected from the group of Cu, Ag, Sb, each B is selecte... | 12/18/2007 |
| 7268367 | Thin film devices for flat panel displays and methods for forming the same Methods of forming thin film devices with different electrical characteristics on a substrate comprising a driver circuit region and a pixel region. A first and a second polysilicon pattern layers are formed on the driving circuit region and the pixel region of the ... | 09/11/2007 |
| 7256455 | Double gate semiconductor device having a metal gate A semiconductor device may include a substrate, an insulating layer formed on the substrate and a conductive fin formed on the insulating layer. The conductive fin may include a number of side surfaces and a top surface. The semiconductor device may also include a s... | 08/14/2007 |
| 7211864 | Fully-depleted castellated gate MOSFET device and method of manufacture thereof A fully depleted castellated-gate MOSFET device is disclosed along with a method of making the same. The device has robust I/O applications, and includes a semiconductor substrate body having an upper portion with an upper end surface and a lower portion with a lowe... | 05/01/2007 |
| 7176092 | Gate electrode for a semiconductor fin device A method for forming a gate electrode for a multiple gate transistor provides a doped, planarized gate electrode material which may be patterned using conventional methods to produce a gate electrode that straddles the active area of the multiple gate transistor and... | 02/13/2007 |
| 7141822 | Semiconductor device and method for manufacturing the same The TFT electric characteristic is ready to be influenced by the channel region in the neighborhood of an interface between a semiconductor and a gate insulating film. The present invention provides TFTs reduced in electric characteristic deviations and a method for... | 11/28/2006 |
| 7132690 | Multi-channel type thin film transistor and method of fabricating the same A multi-channel type thin film transistor includes a gate electrode over a substrate extending along a first direction, a plurality of active layers parallel to and spaced apart from each other extending along a second direction crossing the first direction, and sou... | 11/07/2006 |
| 6700157 | Semiconductor device A semiconductor device has a drift region in which a drift current flows if it is in the ON mode and which is depleted if it is in the OFF mode. The drift region is formed as a structure having a plurality of first conductive type divided drift regions an... | 03/02/2004 |
| 6693294 | Schottky barrier tunnel transistor using thin silicon layer on insulator and method for fabricating the same Provided are a Schottky barrier tunnel transistor (SBTT) and a method of fabricating the same. The SBTT includes a buried oxide layer formed on a base substrate layer and having a groove at its upper surface; an ultra-thin silicon-on-insulator (SOI) layer... | 02/17/2004 |
| 6693324 | Semiconductor device having a thin film transistor and manufacturing method thereof A semiconductor layer has one end placed on top of a first conductive layer and in contact with the first conductive layer, and the other end placed on top of a second conductive layer and in contact with the second conductive layer. At the central portio... | 02/17/2004 |
| 6693299 | Semiconductor device and method of manufacturing the same In a semiconductor device using a crystalline semiconductor film on a substrate 106 having an insulating surface, impurities are locally implanted into an active region 102 to form a pinning region 104. The pinning region 104 suppresses the spread of a de... | 02/17/2004 |
| 6693326 | Semiconductor device of SOI structure A semiconductor device of SOI structure comprises a surface semiconductor layer in a floating state, which is stacked on a buried insulating film so as to construct an SOI substrate, source/drain regions of second conductivity type which are formed in the... | 02/17/2004 |
| 6690064 | Thin-film semiconductor device containing poly-crystalline Si-Ge alloy and method for producing thereof A thin film transistor is provided containing polycrystalline Si--Ge alloy. A high performance TFT may be provided having crystal structure restraining both current scattering in a grain boundary and surface roughness by introduction of Ge into Si. An ima... | 02/10/2004 |
| 6690043 | Semiconductor device and method of manufacturing the same A semiconductor device comprises a base substrate, an insulating film formed on the substrate, an undoped first and lattice-relaxed semiconductor layer formed on the insulating film, a second semiconductor layer having a tensile strain and formed on the f... | 02/10/2004 |
| 6689650 | Fin field effect transistor with self-aligned gate The present invention provides a process for fabricating a metal oxide semiconductor field effect transistor (MOSFET) having a double-gate and a double-channel wherein the gate region is self-aligned to the channel regions and the source/drain diffusion j... | 02/10/2004 |
| 6677609 | Thin film transistor, manufacturing method thereof, and circuit and liquid crystal display device using the thin film transistor A thin film transistor has a structure capable of decreasing deterioration in Vgs-Ids characteristics. The thin film transistor has a source region composed of an N-type impurity-diffused region, a drain region, and a gate electrode, and a channel region ... | 01/13/2004 |
| 6677646 | Method and structure of a disposable reversed spacer process for high performance recessed channel CMOS A high-performance recessed channel CMOS device including an SOI layer having a recessed channel region and adjoining extension implant regions and optional halo implant regions; and at least one gate region present atop the SOI layer and a method for fab... | 01/13/2004 |
| 6673717 | Methods for fabricating nanopores for single-electron devices Nanopores for single-electron devices may be used as templates for placing of a desired number of nanoparticles at a desired location in the devices. Nanopores may be fabricated by providing on a substrate spaced apart electrode regions, a spacer region t... | 01/06/2004 |
| 6667517 | Electrooptical device and electronic device An electrooptical device including a semiconductor device which is formed in a semiconductor layer on an insulating layer in such a manner that floating substrate effects which are essential in a SOI structure is suppressed without reducing the aperture r... | 12/23/2003 |
| 6664582 | Fin memory cell and method of fabrication The present invention provides a memory cell and method for forming the same that results in improved cell density without overly increasing fabrication cost and complexity. The preferred embodiment of the present invention provides a fin design to form t... | 12/16/2003 |
| 6664151 | Method for manufacturing a thin film transistor using steam anneal process to reinforce the surface of the ONO layer Disclosed is a method for manufacturing a thin film transistor of a semiconductor device, wherein an offset area is influenced by a gate voltage to increase the ON-current, which provides a thin film transistor which improves the ON/OFF characteristic of ... | 12/16/2003 |
| 6660085 | Polycrystal thin film forming method and forming system A polycrystal thin film forming method comprising the step of forming a semiconductor thin film on a substrate 14, and the step of flowing a heated gas to the semiconductor thin film while an energy beam 38 is being applied to the semiconductor thin film ... | 12/09/2003 |
| 6660596 | Double planar gated SOI MOSFET structure A double gated silicon-on-insulator (SOI) MOSFET is fabricated by using a mandrel shallow trench isolation formation process, followed by a damascene gate. The double gated MOSFET features narrow diffusion lines defined sublithographically or lithographic... | 12/09/2003 |
| 6661044 | Method of manufacturing MOSEFT and structure thereof A method of manufacturing an MOSFET. A substrate is provided. A trench is formed in the substrate. A sacrificial layer is formed to fill the trench. A doped semiconductive layer is formed over the substrate. The doped semiconductive layer is patterned to ... | 12/09/2003 |
| 6660598 | Method of forming a fully-depleted SOI ( silicon-on-insulator) MOSFET having a thinned channel region A sub-0.05 μm channel length fully-depleted SOI MOSFET device having low source and drain resistance and minimal overlap capacitance and a method of fabricating the same are provided. In accordance with the method of the present invention, at least one d... | 12/09/2003 |
| 6657225 | Semiconductor component, active matrix substrate for a liquid crystal display, and methods of manufacturing such component and substrate In contrast to conventional semiconductor components formed on a silicon substrate, the present invention aims at providing a transistor component functioning as a semiconductor component by being placed on an insulating substrate made of plastic and the ... | 12/02/2003 |
| 6656810 | Semiconductor device capable of reducing dispersion in electrical characteristics and operating at high speed and method for fabricating the same There is provided a semiconductor device capable of reducing dispersion in electrical characteristics, preventing occurrence of bridge shortcircuit in a silicide process and operating at high operating speed and method for fabricating the same. In a SOI s... | 12/02/2003 |
| 6657259 | Multiple-plane FinFET CMOS The present invention provides FinFETs on the same substrate utilizing various crystal planes for FET current channels in order to optimize mobility and/or to reduce mobility. An embodiment of the present invention provides a substrate having a surface or... | 12/02/2003 |
| 6653687 | Insulated gate semiconductor device Dot-pattern-like impurity regions 104 are artificially and locally formed on a channel forming region 103. The impurity regions 104 restrain the expansion of a drain side depletion layer toward the channel forming region 103 to prevent the short channel e... | 11/25/2003 |
| 6649460 | Fabricating a substantially self-aligned MOSFET The present invention includes methods and structures for forming at least a substantially self-aligned MOSFET. According to the present invention, a method of fabricating a semiconductor device includes providing a substrate; providing first materials (s... | 11/18/2003 |
| 6646283 | Semiconductor device, image display device, and method and apparatus for manufacture thereof A switch device includes a source, a drain, and a gate electrode which are conductive, one or more semiconductor island layer(s) formed between the source and drain, an insulating film between the source and island layer, an insulating film between the dr... | 11/11/2003 |
| 6645797 | Method for forming fins in a FinFET device using sacrificial carbon layer A method for forming a fin in a semiconductor device that includes a substrate, an insulating layer formed on the substrate, and a conductive layer formed on the insulating layer, includes forming a carbon layer over the conductive layer and forming a mas... | 11/11/2003 |
| 6642090 | Fin FET devices from bulk semiconductor and method for forming The present invention thus provides a device structure and method for forming fin Field Effect Transistors (FETs) that overcomes many of the disadvantages of the prior art. Specifically, the device structure and method provides the ability to form finFET ... | 11/04/2003 |
| 6642115 | Double-gate FET with planarized surfaces and self-aligned silicides It is, therefore, an object of the present invention to provide a structure and method for an integrated circuit comprising a first gate, a second gate, and source and drain regions adjacent the first and second gates, wherein the structure has a planar u... | 11/04/2003 |
| 6639246 | Semiconductor device There is a problem in that a possibility of a carrier being caused on an interface between a semiconductor layer and an insulating film is high, and the carrier is injected into the insulating film and the interface between the insulating film and the sem... | 10/28/2003 |
| 6639279 | Semiconductor transistor having interface layer between semiconductor and insulating layers The present invention provides a semiconductor device capable of preventing deterioration in carrier mobility of a semiconductor layer, which is a quality of the interface between the semiconductor layer and an insulating layer, and a method of manufactur... | 10/28/2003 |
| 6635923 | Damascene double-gate MOSFET with vertical channel regions A technique for forming a sub-0.05 μm channel length double-gated/double channel MOSFET structure having excellent short-channel characteristics as well as the double-gated/double channel MOSFET structure itself is provided herein. The inventive techniqu... | 10/21/2003 |
| 6635909 | Strained fin FETs structure and method A method and structure for a transistor that includes an insulator and a silicon structure on the insulator. The silicon structure includes a central portion and Fins extending from ends of the central portion. A first gate is positioned on a first side o... | 10/21/2003 |
| 6630388 | Double-gate field-effect transistor, integrated circuit using the transistor and method of manufacturing the same A double-gate field-effect transistor includes a substrate, an insulation film formed on the substrate, source, drain and channel regions formed on the insulation film from a semiconductor crystal layer, and two insulated gate electrodes electrically insu... | 10/07/2003 |
