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| Number | Title | Issue Date |
| 7341884 | Thin-film microelectromechanical device fabrication process Processing and systems to create, and resulting products related to, very small-dimension singular, or monolithically arrayed, semiconductor mechanical devices. Processing is laser performed on selected semiconductor material whose internal crystalline structure bec... | 03/11/2008 |
| 7312471 | Liquid crystal display device having drive circuit and fabricating method thereof A thin film transistor and a fabricating method of a thin film transistor for a liquid crystal display device includes forming a polycrystalline silicon film on a substrate, the polycrystalline silicon film having square shaped grains; forming an active layer by etc... | 12/25/2007 |
| 7297980 | Flat panel display device with polycrystalline silicon thin film transistor The present invention relates to a flat panel display device comprising a polycrystalline silicon thin film transistor and provides a flat panel display device having improved characteristics by having a different number of grain boundaries included in polycrystalli... | 11/20/2007 |
| 7256109 | Isotropic polycrystalline silicon A high-quality isotropic polycrystalline silicon (poly-Si) and a method for fabricating high quality isotropic poly-Si film are provided. The method includes forming a film of amorphous silicon (a-Si) and using a MISPC process to form poly-Si film in a first area of... | 08/14/2007 |
| 6660576 | Substrate and method for producing variable quality substrate material A substrate and a method for fabricating variable quality substrate materials are provided. The method comprises: selecting a first mask having a first mask pattern; projecting a laser beam through the first mask to anneal a first area of semiconductor su... | 12/09/2003 |
| 6649032 | System and method for sputtering silicon films using hydrogen gas mixtures A method has been provided for forming a polycrystalline silicon (p-Si) film with a small amount of hydrogen. Such a film has been found to have excellent sheet resistance, and it is useful in the fabrication of liquid crystal display (LCD) panels made fr... | 11/18/2003 |
| 6573163 | Method of optimizing channel characteristics using multiple masks to form laterally crystallized ELA poly-Si films A method is provided to optimize the channel characteristics of thin film transistors (TFTs) on polysilicon films. The method is well suited to the production of TFTs for use as drivers on liquid crystal display devices. The method is also well suited to ... | 06/03/2003 |
| 6344376 | Method of forming a thin film transistor A method of forming a thin film transistor relative to a substrate includes, a) providing a thin film transistor layer of polycrystalline material on a substrate, the polycrystalline material comprising grain boundaries; b) providing a fluorine containing... | 02/05/2002 |
| 6337233 | Method of manufacturing a polycrystalline silicon layer The present invention discloses a method of manufacturing a polycrysalline silicon layer, comprising: depositing an amorphous silicon layer on a substrate; patterning the amorphous silicon layer to form a semiconductor layer having saw-toothed portions at... | 01/08/2002 |
| 6331474 | Defect compensation method for semiconductor element A defect compensation method for a semiconductor element to compensate for defects of the semiconductor element, in which hot water is conducted with the semiconductor element to accomplish defect compensation. On the basis of this treatment, excessive pr... | 12/18/2001 |
| 6329673 | Liquid-crystal display apparatus, transistor, and display apparatus When a driving circuit for a liquid-crystal display apparatus, especially a switching section and an input-voltage conversion circuit for an analog operation, is formed of circuit devices having large variations in characteristics, such as thin-film trans... | 12/11/2001 |
| 6281057 | Method of manufacturing a semiconductor device A method is obtained of manufacturing a semiconductor device including a semiconductor layer with high field-effect mobility. According to the semiconductor device manufacturing method, a semiconductor layer is formed on a substrate and then the semicondu... | 08/28/2001 |
| 6271062 | Thin film semiconductor device including a semiconductor film with high field-effect mobility A thin film transistor includes: a substrate; a gate electrode, a source electrode and a drain electrode formed above the substrate; and an insulating film and a semiconductor film formed between the gate electrode, and the source electrode and the drain ... | 08/07/2001 |
| 5796116 | Thin-film semiconductor device including a semiconductor film with high field-effect mobility A thin film transistor includes: a substrate; a gate electrode, a source electrode and a drain electrode formed above the substrate; and an insulating film and a semiconductor film formed between the gate electrode, and the source electrode and the drain ... | 08/18/1998 |
| 5466619 | Method for fabricating a thin film transistor A method for fabricating a thin film transistor including the steps of forming a gate electrode on a substrate; successively depositing a gate insulation layer and a semiconductor layer on the substrate; forming sidewall from semiconductor layer on both s... | 11/14/1995 |
| 5111260 | Polysilicon FETs Field effect transistors in which the channel region is made of thin highly doped polysilicon which is preferably also hydrogen passivated.... | 05/05/1992 |
| 5064779 | Method of manufacturing polycrystalline silicon film In a method of manufacturing a poly-Si film, silicon is deposited on a substrate by means of a thermal decomposition of a feed gas and plasma generation. The method comprises the step of arranging said substrate within a reaction apparatus, the step of in... | 11/12/1991 |
| 4988638 | Method of fabrication a thin film SOI CMOS device A thin film SOI CMOS device wherein the suitably doped deposited layers of an n-channel transistor and a p-channel transistor are simultaneously deposited. The source and drain elements of one transistor and the gate element of the other transistor are fo... | 01/29/1991 |
| 4951113 | Simultaneously deposited thin film CMOS TFTs and their method of fabrication A thin film SOI CMOS device wheren the suitably doped deposited layers of an n-channel transistor and a p-channel transistor are simultaneously deposited. The source and drain elements of one transistor and the gate element of the other transistor are for... | 08/21/1990 |
| 4613382 | Method of forming passivated polycrystalline semiconductors A semiconductor device includes a polycrystalline semiconductor film body having at least one element selected from a group consisting of hydrogen, fluorine, chlorine, bromine, iodine, lithium, sodium, potassium, rubidium, and cesium included mainly aroun... | 09/23/1986 |
| 4459739 | Thin film transistors A thin film transistor has a semiconductor layer, an insulating layer and source, drain and gate electrodes. The improvement comprises creating an enhanced conductivity layer in the semiconductor by ion implantation or diffusion on phased deposition. The ... | 07/17/1984 |
| 4422090 | Thin film transistors A thin film transistor has a semiconductor layer, an insulating layer and source, drain and gate electrodes. The improvement comprises creating an enhanced conductivity layer in the semiconductor by ion implantation or diffusion on phased deposition. The ... | 12/20/1983 |
