Class 257/E29.276 - With supplementary region or layer in thin film or in insulated bulk substrate supporting it for controlling or increasing voltage resistance of device (EPO)

Subclass of Class 257 - Active solid-state devices (e.g., transistors, solid-state diodes)
Definition: This subclass is indented under subclass E29.273. This subclass
No. of patents: 50
Last issue date: 09/30/2003

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Number	Title	Issue Date
6627952	Silicon oxide insulator (SOI) semiconductor having selectively linked body A silicon oxide insulator (SOI) device includes an SOI layer supported on a silicon substrate. A body region is disposed on the SOI layer, and the body region is characterized by a first conductivity type. Source and drain regions are juxtaposed with the ...	09/30/2003
6596570	SOI device with reduced junction capacitance An SOI FET comprising a silicon substrate having silicon layer on top of a buried oxide layer having doped regions and an undoped region is disclosed. The doped region has a dielectric constant different from the dielectric constant of the doped regions. ...	07/22/2003
6558998	SOI type integrated circuit with a decoupling capacity and process for embodiment of such a circuit Integrated circuit comprising: at least one first and one second power supply terminal (418, 420), at least one active area (302, 304, 306, 308) formed in a thin layer (206) of a substrate and electrically connected to at least one of the power supply terminal...	05/06/2003
6528853	Method and semiconductor structure for implementing dual plane body contacts for silicon-on-insulator (SOI) transistors A method and semiconductor structure are provided for implementing dual plane body contacts for silicon-on-insulator (SOI) transistors. A bulk silicon substrate is provided. A deep ion implant layer is implanted to reside below an oxide insulator. An oxyg...	03/04/2003
6489655	Integrated circuit with dynamic threshold voltage An integrated circuit and method for making it are described. The integrated circuit includes a first insulating layer formed on a substrate and a body strap of a first conductivity type that is formed on the first insulating layer. A second insulating la...	12/03/2002
6396079	Thin film semiconductor device having a buffer layer A thin film semiconductor device having improved operating characteristics and reliability of a thin film transistor formed on a glass substrate. The thin film semiconductor device has a thin film transistor 3 formed on a glass substrate 1 containing alka...	05/28/2002
6392277	Semiconductor device A semiconductor device having a field effect transistor formed in a semiconductor layer provided on an insulating layer is provided with a body electrode electrically connected to a channel forming region of the field effect transistor, and a back gate el...	05/21/2002
6387739	Method and improved SOI body contact structure for transistors Disclosed is process for maufacture of a type "BC" body contacted SOI transistor with a process for making these transistors in a manufacturing environment to providing a structure which removes overlay tolerance from the effective transistor width during...	05/14/2002
6316808	T-Gate transistor with improved SOI body contact structure Disclosed is a type "BC" body contacted SOI transistor and process for making these transistors in a manufacturing environment by providing a structure and process which removes overlay tolerance from the effective transistor width. The width is determine...	11/13/2001
6287901	Method and semiconductor structure for implementing dual plane body contacts for silicon-on-insulator (SOI) transistors A method and semiconductor structure are provided for implementing dual plane body contacts for silicon-on-insulator (SOI) transistors. A bulk silicon substrate is provided. A deep ion implant layer is implanted to reside below an oxide insulator. An oxyg...	09/11/2001
6265249	Method of manufacturing thin film transistors An additional high quality insulating layer is grown over the substrate after the formation of the gate electrode of a thin film transistor (TFT). The growth temperature of the insulating layer can be higher than conventional method and the insulating lay...	07/24/2001
6261878	Integrated circuit with dynamic threshold voltage An integrated circuit and method for making it are described. The integrated circuit includes a first insulating layer formed on a substrate and a body strap of a first conductivity type that is formed on the first insulating layer. A second insulating la...	07/17/2001
6239649	Switched body SOI (silicon on insulator) circuits and fabrication method therefor Circuits with SOI devices are coupled to a body bias voltage via a switch for selectively connecting the body bias voltage signals to the SOI device body. NMOS or PMOS SOI devices are used for the switched body SOI device and a FET is used for the switch ...	05/29/2001
6211928	Liquid crystal display and method for manufacturing the same A liquid crystal display includes a substrate; a transistor over the substrate, the transistor having a gate, a source, and a drain; a passivation layer over the transistor; a light shielding layer over a portion of the passivation layer over the transist...	04/03/2001
6177708	SOI FET body contact structure A self-aligned SOI FET device with an "L" shaped gate structure allows an integral diode junction to be formed between the source and the body of the device. Two devices with this gate geometry can be advantageously placed side-by-side in a single rx open...	01/23/2001
6150692	Thin film semiconductor device for active matrix panel A thin film semiconductor device comprising a thin film transistor (TFT) having a thin film semiconductor on an insulation substrate to define an element region, and a hygroscopic interlayer insulating layer which covers said element, a hydrogenation trea...	11/21/2000
6104065	Semiconductor device having an active region in a substrate with trapezoidal cross-sectional structure A semiconductor device and a method for fabricating the same, wherein a thick side wall oxide film or polysilicon film is formed on the edge portion of the second silicon substrate. At the side wall of the oxide film or polysilicon film, the thickness of ...	08/15/2000
6100954	Liquid crystal display with planarizing organic gate insulator and organic planarization layer and method for manufacturing A thin film transistor substrate for a liquid crystal display includes a substrate; a thin film transistor over the substrate, the thin film transistor having a gate, a source, a drain, a semiconductor layer, and a gate insulation layer; and a protection ...	08/08/2000
6051452	Method for manufacturing a semiconductor device with ion implantation A silicon oxide layer serving as an insulation layer is formed on a p-type semiconductor substrate. An n+ -type source and drain regions are formed on the p-type substrate 110 with a spacing therebetween. A channel region is interposed between ...	04/18/2000
6020222	Silicon oxide insulator (SOI) semiconductor having selectively linked body A silicon oxide insulator (SOI) device includes an SOI layer supported on a silicon substrate. A body region is disposed on the SOI layer, and the body region is characterized by a first conductivity type. Source and drain regions are juxtaposed with the ...	02/01/2000
5994738	Silicon oxide insulator (SOI) semiconductor having selectively linked body A silicon oxide insulator (SOI) device includes an SOI layer supported on a silicon substrate. A body region is disposed on the SOI layer, and the body region is characterized by a first conductivity type. Source and drain regions are juxtaposed with the ...	11/30/1999
5932484	Thin film semiconductor device for active matrix panel A thin film semiconductor device comprising a thin film transistor (TFT) having a thin film semiconductor on an insulation substrate to define an element region, and a hygroscopic interlayer dielectric which covers the element. A hydrogenation treatment w...	08/03/1999
5926703	LDD device having a high concentration region under the channel It is an object to obtain a semiconductor device with the LDD structure having both operational stability and high speed and a manufacturing method thereof. A high concentration region (11) with boron of about 1×1018 /cm3 introduced...	07/20/1999
5903047	Low temperature-deposited passivation film over semiconductor device The present invention provides a composite passivation film deposited at low temperatures (6.4 nm) of an amorp...	05/11/1999
5891757	Method for forming a field-effect transistor having difference in capacitance between source and drain with respect to shield layer A field-effect transistor has a source region, a drain region, a gate electrode, and a low resistivity layer. The source and drain regions are of a first conductivity type and formed as surface regions of a semiconductor layer formed on one of an insulati...	04/06/1999
5828082	Thin film transistor having dual insulation layer with a window above gate electrode An additional high quality insulating layer is grown over the substrate after the formation of the gate electrode of a thin film transistor (TFT). The growth temperature of the insulating layer can be higher than conventional method and the insulating lay...	10/27/1998
5773330	Semiconductor device and method for fabricating the same A semiconductor device and a method for fabricating the same, wherein a thick side wall oxide film or polysilicon film is formed on the edge portion of the second silicon substrate. At the side wall of the oxide film or polysilicon film, the thickness of ...	06/30/1998
5760442	Semiconductor device of a silicon on insulator metal-insulator type with a concave feature A first silicon oxide layer serving as an insulation layer is formed on a p-type semiconductor substrate. An n+ -type source and drain regions are formed on the p-type substrate 110 with a spacing therebetween. A channel region is interposed be...	06/02/1998
5726082	Semiconductor device and method for fabricating the same A semiconductor device having a silicon-on-insulator structure, and a method for fabricating the semiconductor device, wherein a thick silicon oxide film is formed on each side wall of an active silicon substrate, thereby obtaining an increased threshold ...	03/10/1998
5721444	Thin-film transistor having a buried impurity region and method of fabricating the same A buried insulating layer is provided in a semiconductor substrate, in a position separated from its major surface. A LOCOS isolation film is provided in the major surface of the semiconductor substrate for isolating an active region from other active reg...	02/24/1998
5686326	Method of making thin film transistor A thin film transistor comprises a gate electrode, an insulating layer and a semiconductor layer formed and laminated on an insulating substrate, said insulating layer and said semiconductor layer having the same planar pattern....	11/11/1997
5648663	Semiconductor structure having transistor and other elements on a common substrate and process for producing the same A thin film transistor comprises a gate electrode, an insulating layer and a semiconductor layer formed and laminated on an insulating substrate. The insulating layer and the semiconductor layer have the same planar pattern....	07/15/1997
5641980	Device having a high concentration region under the channel It is an object to obtain a semiconductor device with the LDD structure having both operational stability and high speed and a manufacturing method thereof. A high concentration region (11) with boron of about 1×1018 /cm3 introduced...	06/24/1997
5559368	Dynamic threshold voltage mosfet having gate to body connection for ultra-low voltage operation A dynamic threshold voltage IGFET such as a MOSFET is operable at voltages of 0.6 volt or less. The threshold voltage of the transistor is reduced to zero volt or less by interconnecting the gate contact and the device body in which the voltage controlled...	09/24/1996
5455182	Semiconductor process for forming channel layer with passivated covering A thin film transistor which includes a first insulating layer, a silicon channel layer formed on the first insulating layer, and a second insulating layer formed on the silicon channel layer, and a passivation layer formed on the first insulating layer a...	10/03/1995
5334859	Thin-film transistor having source and drain electrodes insulated by an anodically oxidized film A thin-film transistor panel comprises an insulative substrate, a plurality of thin-film transistor elements arranged at predetermined intervals on said substrate, and wirings electrically connecting the thin-film transistor elements characterized in that...	08/02/1994
5296727	Double gate FET and process for manufacturing same A high speed and highly functional MOSFET having a thin channel formed in a single crystalline layer is controlled by voltages applied to both an upper gate electrode and a buried gate layer that sandwich the channel therebetween....	03/22/1994
5294821	Thin-film SOI semiconductor device having heavily doped diffusion regions beneath the channels of transistors Thin-film SOI semiconductor devices formed in a thin film Si semiconductor substrate layer formed on an insulating layer on a semiconductor substrate have improved electrical characteristics and reliable reproducibility of those characteristics in the mas...	03/15/1994
5266825	Thin-film device A thin-film transistor using hydrogenated amorphous silicon (a-Si:H), and particularly a thin-film device such as a thin-film transistor having high conductivity, large drivability and high process margin, and a display panel using the same transistors. T...	11/30/1993
5243213	MIS semiconductor device formed by utilizing SOI substrate having a semiconductor thin film formed on a substrate through an insulating layer The present invention is directed to a MIS semiconductor device having a semiconductor layer formed on an insulating substrate and a gate electrode formed on this semiconductor layer through a gate insulating film, which is provided with a semiconductor r...	09/07/1993

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Class 257/E29.276 - With supplementary region or layer in thin film or in insulated bulk substrate supporting it for controlling or increasing voltage resistance of device (EPO)