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| Number | Title | Issue Date |
| 7439559 | SOI device with different crystallographic orientations A method of forming a memory cell having a trench capacitor and a vertical transistor in a semiconductor substrate includes a step of providing a bonded semiconductor wafer having a lower substrate with an [010] axis parallel to a first wafer axis and an upper semic... | 10/21/2008 |
| 7439579 | Power semiconductor with functional element guide structure A trench transistor is described. In one aspect, the trench transistor has a cell array having a plurality of cell array trenches and a plurality of mesa zones arranged between the cell array trenches, and a semiconductor functional element formed in one of the mesa... | 10/21/2008 |
| 7439583 | Tungsten plug drain extension A power metal-oxide-semiconductor field effect transistor (MOSFET) cell includes a semiconductor substrate. A first electrode is disposed on the semiconductor substrate. A voltage sustaining layer is formed on the semiconductor substrate. A highly doped active zone ... | 10/21/2008 |
| 7436025 | Termination structures for super junction devices A semiconductor device 10 is provided. A first layer 12 has a first dopant type; a second layer 14 is provided over the first layer 12; and a third layer 16 is provided over the second layer and has the first dopant type. A plurali... | 10/14/2008 |
| 7432145 | Power semiconductor device with a base region and method of manufacturing same A low on-state resistance power semiconductor device has a shape and an arrangement that increase the channel density and the breakdown voltage The power semiconductor device comprises a plurality of individual cells formed on a semiconductor substrate (62). ... | 10/07/2008 |
| 7429768 | Semiconductor device having a trench surrounding each of plural unit cells A semiconductor device comprises a plurality of unit cells, each comprising a vertical metal oxide semiconductor field effect transistor (MOSFET). The unit cell includes a first source region formed in a first base region, a second source region formed in the first ... | 09/30/2008 |
| 7427788 | Multi bridge channel field effect transistors with nano-wire channels and methods of manufacturing the same A field effect transistor (FET) includes spaced apart source and drain regions disposed on a substrate and at least one pair of elongate channel regions disposed on the substrate and extending in parallel between the source and drain regions. A gate insulating regio... | 09/23/2008 |
| 7423318 | Recessed gate structure with stepped profile Disclosed herein are a recess-gate structure in which junctions have a thickness significantly smaller than the thickness of a device isolation layer to thereby prevent shorting of the junctions located at opposite lateral sides of the device isolation layer close t... | 09/09/2008 |
| 7391079 | Metal oxide semiconductor device A method of fabricating an MOS device is described. A substrate doped a first type dopant is provided as a drain. A first type epitaxial layer is formed on the substrate and is patterned with a trench to form several islands. A gate dielectric layer is than formed o... | 06/24/2008 |
| 7385273 | Power semiconductor device A power semiconductor device that includes a plurality of gate structure each having a gate insulation of a first thickness, and a termination region, the termination including a field insulation body surrounding the active region and having a recess that includes a... | 06/10/2008 |
| 7385250 | Semiconductor device A semiconductor device comprises a semiconductor portion including first semiconductor layers of a first conduction type and second semiconductor layers of a second conduction type alternately arranged on the surface of a semiconductor substrate to form a striped sh... | 06/10/2008 |
| 7378317 | Superjunction power MOSFET Methods and apparatus are provided for TMOS devices, comprising multiple N-type source regions, electrically in parallel, located in multiple P-body regions separated by N-type JFET regions at a first surface. The gate overlies the body channel regions and the JFET ... | 05/27/2008 |
| 7368783 | Semiconductor device A semiconductor device includes a semiconductor substrate of a first conductivity type, a lightly-doped semiconductor layer of the first conductivity type formed on the first major surface of the substrate, a first semiconductor region of the first conductivity type... | 05/06/2008 |
| 7368353 | Trench power MOSFET with reduced gate resistance A method for manufacturing a trench type power semiconductor device which includes process steps for forming proud gate electrodes in order to decrease the resistivity thereof. ... | 05/06/2008 |
| 7365391 | Semiconductor device and method for manufacturing thereof A semiconductor device having high withstand voltage is provided. An active groove 22a includes a long and narrow main groove part 26 and a sub groove part 27 connected to a longitudinal side surface of the main groove part, and a buried ... | 04/29/2008 |
| 7358566 | Semiconductor device A first main electrode is provided on one surface thereof. On the other surface thereof, a second semiconductor layer of the first conduction type and a third semiconductor layer of the second conduction type are arranged alternately along the surface. A fourth semi... | 04/15/2008 |
| 7348246 | Methods of fabricating non-volatile memory devices including divided charge storage structures A semiconductor memory device includes a substrate having first and second source/drain regions therein and a channel region therebetween. The device also includes first and second charge storage layers on the channel region, a first insulating layer on the channel ... | 03/25/2008 |
| 7307312 | Method of manufacturing a semiconductor device A semiconductor device manufacturing method comprises forming a pn column so that the pn column is designed to have a strip form in the section of the substrate and have a repetitive pattern of a p-conduction type and an n-conduction type on the substrate surface ov... | 12/11/2007 |
| 7301200 | Trench FET with self aligned source and contact A trench type power MOSgated device has a plurality of spaced trenches lined with oxide and filled with conductive polysilicon. The tops of the polysilicon fillers are below the top silicon surface and are capped with a deposited oxide the top of which is flush with... | 11/27/2007 |
| 7301201 | High voltage device having polysilicon region in trench and fabricating method thereof A high voltage device prevents or minimizes the lowering of a maximum operating voltage range. Bulk resistances of the drift regions are reduced by forming trenches within the drift regions and filling the trenches with conductive polysilicon layers. The polysilicon... | 11/27/2007 |
| 7291899 | Power semiconductor component A semiconductor component suitable for use as a power semiconductor component and method of making a semiconductor component is disclosed. In one embodiment, the semiconductor component includes a semiconductor body having a first surface, a second surface, a third ... | 11/06/2007 |
| 7285823 | Superjunction semiconductor device structure In one embodiment, a charge compensation region is formed in a body of semiconductor material. A conductive layer is coupled to the charge compensation layer. In a further embodiment, the charge compensation region comprises a trench filled with opposite conductivit... | 10/23/2007 |
| 7259426 | Semiconductor device and its manufacturing method There is provided a power MISFET which includes a semiconductor region of a first conductivity, a semiconductor base region of a second conductivity, a pillar region, a first major electrode region of a first conductivity on the base region, a second major electrode... | 08/21/2007 |
| 7242040 | Lateral trench field-effect transistors in wide bandgap semiconductor materials, methods of making, and integrated circuits incorporating the transistors A junction field effect transistor is described. The transistor is made from a wide bandgap semiconductor material. The device comprises source, channel, drift and drain semiconductor layers, as well as p-type implanted or Schottky gate regions. The source, channel,... | 07/10/2007 |
| 7230299 | Power switch structure with low RDSon and low current limit and method In one embodiment, a power switch device (33) includes a first MOSFET device 41 and a second MOSFET device (42). A split gate structure (84) including a first gate electrode (48,87) controls the first MOSFET device (41). A s... | 06/12/2007 |
| 7205608 | Electronic device including discontinuous storage elements An electronic device can include a substrate having a trench that includes a wall and a bottom. The electronic device can also include a first set of discontinuous storage elements that overlie a primary surface of the substrate and a second set of discontinuous sto... | 04/17/2007 |
| 7202525 | Trench MOSFET with trench tip implants A trench type power semiconductor device includes a channel region atop an epitaxially silicon layer and a plurality of shallow gate electrode trenches within the channel region such that the bottom of each trench extends to a distance above the junction defined by ... | 04/10/2007 |
| 7196376 | Trench-type power MOSFET with embedded region at the bottom of the gate and increased breakdown voltage An active groove filled region 23a is kept at a portion of an active groove 22a connecting to an embedded region 24 positioned below a gate groove 83. The active groove filled region 23a connects to a source el... | 03/27/2007 |
| 7187022 | Semiconductor device having a multi-bridge-channel and method for fabricating the same In a semiconductor device having a multi-bridge-channel, and a method for fabricating the same, the device includes first and second semiconductor posts protruding from a surface of a semiconductor substrate and having a source and a drain region, respectively, in u... | 03/06/2007 |
| 7173307 | Semiconductor device and manufacturing method thereof An aspect of the present invention provides a semiconductor device that includes a first conductivity type semiconductor body, a source region in contact with the semiconductor body, whose bandgap is different from that of the semiconductor body, and which formed he... | 02/06/2007 |
| 7166891 | Semiconductor device with etch resistant electrical insulation layer between gate electrode and source electrode A trench-structure semiconductor device is highly reliable and has an increased resistance to hydrofluoric acid cleaning or other cleaning of an insulation film between a gate electrode, which is embedded in a trench, and source electrode. In a trench-structure semi... | 01/23/2007 |
| 7084455 | Power semiconductor device having a voltage sustaining region that includes terraced trench with continuous doped columns formed in an epitaxial layer A method is provided for forming a power semiconductor device. The method begins by providing a substrate of a first conductivity type and forming a voltage sustaining region on the substrate. The voltage sustaining region is formed in the following manner. First, a... | 08/01/2006 |
| 7084456 | Trench MOSFET with recessed clamping diode using graded doping In a trench-gated MOSFET including an epitaxial layer over a substrate of like conductivity and trenches containing thick bottom oxide, sidewall gate oxide, and conductive gates, body regions of the complementary conductivity are shallower than the gates, and clamp ... | 08/01/2006 |
| 6703684 | Semiconductor device and method of forming a semiconductor device A power semiconductor device (10) has an active region that includes a drift region (20). At least a portion of the drift region (20) is provided in a membrane (16) which has opposed top and bottom surfaces (15,17). In one embodiment, the top surface (15)... | 03/09/2004 |
| 6703665 | Transistor A withstand voltage region of a second conductivity type is formed in a drain layer of a first conductivity type in a semiconductor substrate, and a conductive region of the first conductivity type is partly formed in the withstand voltage region by being... | 03/09/2004 |
| 6703671 | Insulated gate semiconductor device and method of manufacturing the same Impurity regions 110 that can form an energy barrier are artificially and locally disposed in a channel formation region 111. The impurity regions 110 restrain a depletion layer that extends from a drift region 102 toward a channel formation region 111, a... | 03/09/2004 |
| 6700156 | Insulated gate semiconductor device An insulated gate semiconductor device includes a first semiconductor layer of a first conductivity type. A plurality of second semiconductor layers of a second conductivity type selectively formed in a surface area of the first semiconductor layer. At le... | 03/02/2004 |
| 6700141 | Semiconductor device A reliable super-junction semiconductor device is provided that facilitates relaxing the tradeoff relation between the on-resistance and the breakdown voltage and improving the avalanche withstanding capability under an inductive load. The super-junction ... | 03/02/2004 |
| 6700175 | Vertical semiconductor device having alternating conductivity semiconductor regions There is provided a method of manufacturing a vertical semiconductor device including a structural section in which an n- -type semiconductor region and a p- -type semiconductor region are arranged alternately without filling trenche... | 03/02/2004 |
| 6696741 | High breakdown voltage PN junction structure, and related manufacturing process PN junction structure including a first junction region of a first conductivity type, and a second junction region of a second conductivity type, wherein between said first and second junction regions a grid of buried insulating material regions is provid... | 02/24/2004 |
