Did You Know...
...that when IBM conducted a market study of Chester Carlson's invention in 1959, the company concluded that it would take only 5000 units of his new product to saturate the market? IBM therefore declined to be part of the new product introduction. Too bad for IBM. Carlson's invention was the xerography process, and his new product was the beginning of the Xerox Corporation. It is estimated that every day, worldwide, 3,000,000,000 copies are made!!
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| Number | Title | Issue Date |
| 7436025 | Termination structures for super junction devices A semiconductor device 10 is provided. A first layer 12 has a first dopant type; a second layer 14 is provided over the first layer 12; and a third layer 16 is provided over the second layer and has the first dopant type. A plurali... | 10/14/2008 |
| 7427795 | Drain-extended MOS transistors and methods for making the same Drain-extended MOS transistors (T1, T2) and semiconductor devices (102) are described, as well as fabrication methods (202) therefor, in which a p-buried layer (130) is formed prior to formation of epitaxial silicon (106) ov... | 09/23/2008 |
| 7423319 | LDPMOS structure with enhanced breakdown voltage A semiconductor structure includes a first well region of a first conductivity type overlying a substrate, a second well region of a second conductivity type opposite the first conductivity type overlying the substrate and laterally adjoining the first well region, ... | 09/09/2008 |
| 7414287 | System and method for making a LDMOS device with electrostatic discharge protection A semiconductor device includes one or more LDMOS transistors and one of more SCR-LDMOS transistors. Each LDMOS transistor includes a LDMOS well of a first conductivity type, a LDMOS source region of a second conductivity type formed in the LDMOS well, and a LDMOS d... | 08/19/2008 |
| 7408234 | Semiconductor device and method for manufacturing the same An object of the present invention is to provide a semiconductor device that is able to realize a low on-resistance maintaining a high drain-to-source breakdown voltage, and a method for manufacturing thereof, the present invention including: a supporting substrate;... | 08/05/2008 |
| 7385250 | Semiconductor device A semiconductor device comprises a semiconductor portion including first semiconductor layers of a first conduction type and second semiconductor layers of a second conduction type alternately arranged on the surface of a semiconductor substrate to form a striped sh... | 06/10/2008 |
| 7372104 | High voltage CMOS devices A transistor suitable for high-voltage applications is provided. The transistor is formed on a substrate having a deep well of a first conductivity type. A first well of the first conductivity type and a second well of a second conductivity type are formed such that... | 05/13/2008 |
| 7365402 | LDMOS transistor An LDMOS semiconductor transistor structure comprises a substrate having an epitaxial layer of a first conductivity type, a source region extending from a surface of the epitaxial layer of a second conductivity type, a lightly doped drain region within the epitaxial... | 04/29/2008 |
| 7345341 | High voltage semiconductor devices and methods for fabricating the same High voltage semiconductor devices and methods for fabricating the same are provided. An exemplary embodiment of a semiconductor device capable of high-voltage operation, comprising a substrate comprising a first well formed therein. A gate stack is formed overlying... | 03/18/2008 |
| 7314799 | Self-aligned trench field effect transistors with regrown gates and bipolar junction transistors with regrown base contact regions and methods of making Junction field-effect transistors with vertical channels and self-aligned regrown gates and methods of making these devices are described. The methods use techniques to selectively grow and/or selectively remove semiconductor material to form a p-n junction gate alo... | 01/01/2008 |
| 7301201 | High voltage device having polysilicon region in trench and fabricating method thereof A high voltage device prevents or minimizes the lowering of a maximum operating voltage range. Bulk resistances of the drift regions are reduced by forming trenches within the drift regions and filling the trenches with conductive polysilicon layers. The polysilicon... | 11/27/2007 |
| 7265426 | High-voltage MOS transistor and corresponding manufacturing method A high-voltage MOS transistor having: a first region of a first conductivity type; a source region of the second conductivity type, which is introduced into the first region; a drain region of the second conductivity type, which is introduced into the first region; ... | 09/04/2007 |
| 7221011 | High-voltage vertical transistor with a multi-gradient drain doping profile A high-voltage transistor includes first and second trenches that define a mesa in a semiconductor substrate. First and second field plate members are respectively disposed in the first and second trenches, with each of the first and second field plate members being... | 05/22/2007 |
| 7187034 | Distributed power MOSFET Segmented power transistors and fabrication methods are disclosed in which transistor segments are spaced from one another to facilitate thermal diffusion, and in which other electrical devices can be formed in the spaces between transistor segments. ... | 03/06/2007 |
| 7180132 | Enhanced RESURF HVPMOS device with stacked hetero-doping RIM and gradual drift region An HV PMOS device formed on a substrate having an HV well of a first polarity type formed in an epitaxial layer of a second polarity type includes a pair of field oxide regions on the substrate and at least partially over the HV well. Insulated gates are formed on t... | 02/20/2007 |
| 7161198 | Semiconductor integrated circuit device having MOS transistor An N-channel MOS transistor of a semiconductor device having a high withstand voltage employs a drain structure with a low concentration and a large diffusion depth, which causes a problem in that a sufficiently high withstand voltage cannot be obtained due to a par... | 01/09/2007 |
| 7151296 | High voltage lateral diffused MOSFET device A semiconductor device comprises a substrate. A source active region and a drain active region are disposed in the substrate and spaced from one another in a first dimension. The source active region has a first and a second outline defining a width of the source ac... | 12/19/2006 |
| 7115958 | Lateral power MOSFET for high switching speeds A lateral power metal-oxide-semiconductor field effect transistor (MOSFET) having a gate structure in which the insulated gate is coupled to the gate electrode through contacts at a plurality of locations. The source electrode includes first and second segments. The... | 10/03/2006 |
| 7109562 | High voltage laterally double-diffused metal oxide semiconductor A high voltage laterally double-diffused metal oxide semiconductor (LDMOS) stricture is characterized as follows: the second source electrode metal layer connected to the first source electrode metal layer protrudes out of a certain length relative to the first sour... | 09/19/2006 |
| 7034377 | Semiconductor device and method of manufacturing the device To reduce the on-resistance in a semiconductor device, such as a trench lateral power MOSFET, a trench etching region forms a mesh pattern in which a first trench section, formed in an active region, and a second trench section, formed in a gate region for leading o... | 04/25/2006 |
| 6972460 | Semiconductor device and manufacturing method thereof A semiconductor device including a drift layer of a first conductivity type formed on a surface of a semiconductor substrate. A surface of the drift layer has a second area positioned on an outer periphery of a first area. A cell portion formed in the first area inc... | 12/06/2005 |
| 6960807 | Drain extend MOS transistor with improved breakdown robustness A drain-extended metal-oxide-semiconductor transistor (40) with improved robustness in breakdown characteristics is disclosed. Field oxide isolation structures (29c) are disposed between the source region (30) and drain contact regions ( | 11/01/2005 |
| 6703895 | Semiconductor component and method of operating same An embodiment of a method of redistributing power in a semiconductor component includes varying a saturation current between a drain terminal (330) and a source terminal (320) of a field effect transistor (FET) (200, 500). The FET is at least a portion of... | 03/09/2004 |
| 6703684 | Semiconductor device and method of forming a semiconductor device A power semiconductor device (10) has an active region that includes a drift region (20). At least a portion of the drift region (20) is provided in a membrane (16) which has opposed top and bottom surfaces (15,17). In one embodiment, the top surface (15)... | 03/09/2004 |
| 6699740 | Method for manufacturing a lateral double-diffused MOS transistor having stable characteristics and equal drift length A semiconductor device including a P-type semiconductor layer; an N-type first well on the surface of the semiconductor layer; a P-type second well on the surface of the first well; an N-type source region on the surface of the second well; and an N-type ... | 03/02/2004 |
| 6700160 | Double-diffused MOS (DMOS) power transistor with a channel compensating implant An improved DMOS power transistor (20) with a single p-body implant (12) and including an n-type channel compensating implant (NCCI) (24). The improved DMOS power transistor (20) provides a more favorable trade-off between threshold voltage (VT... | 03/02/2004 |
| 6700157 | Semiconductor device A semiconductor device has a drift region in which a drift current flows if it is in the ON mode and which is depleted if it is in the OFF mode. The drift region is formed as a structure having a plurality of first conductive type divided drift regions an... | 03/02/2004 |
| 6696323 | Method of manufacturing semiconductor device having trench filled up with gate electrode In a semiconductor device, a p-type base region is provided in an n- -type substrate to extend from a principal surface of the substrate in a perpendicular direction to the principal surface. An n+ -type source region extends in the ... | 02/24/2004 |
| 6693338 | Power semiconductor device having RESURF layer A semiconductor device includes a drain layer, first and second drift layers, a RESURF layer, a drain electrode, a base layer, a source layer, a source electrode, and a gate electrode. The first drift layer is formed on the drain layer. The second drift l... | 02/17/2004 |
| 6693339 | Semiconductor component and method of manufacturing same A semiconductor component includes a first semiconductor region (110, 210) having a first conductivity type and a second semiconductor region (120, 220) above the first semiconductor region and having a second conductivity type. The semiconductor componen... | 02/17/2004 |
| 6677641 | Semiconductor structure with improved smaller forward voltage loss and higher blocking capability A semiconductor device is disclosed. The semiconductor device includes one or more charge control electrodes a plurality of charge control electrodes. The one or more charge control electrodes may control the electric field within the drift region of a se... | 01/13/2004 |
| 6677642 | Field effect transistor structure and method of manufacture A field effect transistor structure is formed with a body semiconductor layer (5) having source (9), body (7), drift region and drain (11). An upper semiconductor layer (21) is separated from the body by an oxide layer (17). The upper semiconductor layer ... | 01/13/2004 |
| 6670673 | Semiconductor device and method for manufacturing semiconductor device A first trench is formed in a surface of an n+ -type semiconductor substrate that forms a source region. A p-type base region, an n- -type drift region, and an n+ -type drain region are deposited in this order in the first... | 12/30/2003 |
| 6670685 | Method of manufacturing and structure of semiconductor device with floating ring structure A high voltage semiconductor device includes a drain region disposed within a semiconductor substrate. The semiconductor device further includes a field oxide layer disposed outwardly from the drain region of the semiconductor substrate. The semiconductor... | 12/30/2003 |
| 6664593 | Field effect transistor structure and method of manufacture A field effect transistor structure is formed with a body semiconductor layer (1) having source (3), channel (7), drift region (9) and drain (5). An upper metallisation layer (15, 17) is separated from the body by an oxide layer (11). The upper metallisat... | 12/16/2003 |
| 6664590 | Circuit configuration for load-relieved switching A circuit configuration for load-relieved switching has a bridge circuit with at least two controllable power switches, whose controlled paths are arranged in series with one another and between a first and a second supply potential. The circuit configura... | 12/16/2003 |
| 6642577 | Semiconductor device including power MOSFET and peripheral device and method for manufacturing the same First and second trenches are formed on an n+ type substrate at a power MOSFET formation region and a peripheral device formation region, respectively. An n- type epitaxial film, a p type epitaxial film, and an n+ type epi... | 11/04/2003 |
| 6639272 | Charge compensation semiconductor configuration Charge balancing is achieved in a compensation component by creating compensation regions having different thickness. In this manner, the ripple of the electric field can be chosen to have approximately the same magnitude in all of the compensation region... | 10/28/2003 |
| 6639274 | Semiconductor device A trench lateral MOSFET including a gate region where gate polysilicon is lead out to a substrate surface, and an active region where electric current is driven in a MOSFET operation, and with a trench width, in the gate region Wg, being narrower than a t... | 10/28/2003 |
| 6639277 | High-voltage transistor with multi-layer conduction region A high voltage insulated gate field-effect transistor includes an insulated gate field-effect device structure having a source and a drain, the drain being formed with an extended well region having one or more buried layers of opposite conduction type sa... | 10/28/2003 |
