Class 257/E29.252 - With direct single heterostructure (i.e., with wide bandgap layer formed on top of active layer (e.g., direct single heterostructure MIS-like HEMT)) (EPO)

Subclass of Class 257 - Active solid-state devices (e.g., transistors, solid-state diodes)
Definition: This subclass is indented under subclass E29.246. This subclass
No. of patents: 33
Last issue date: 10/21/2008

Number	Title	Issue Date
7439555	III-nitride semiconductor device with trench structure A III-nitride trench device has a vertical conduction region with an interrupted conduction channel when the device is not on, providing an enhancement mode device. The trench structure may be used in a vertical conduction or horizontal conduction device. A gate die...	10/21/2008
7432538	Field-effect transistor A field-effect transistor includes a channel layer having a channel and a carrier supply layer, disposed on the channel layer, containing a semiconductor represented by the formula AlxGa1-xN, wherein x is greater than 0.04 and less than 0.45. T...	10/07/2008
7400001	Nitride based hetero-junction field effect transistor A nitride based hetero-junction field effect transistor includes a high resistance nitride semiconductor layer formed on a substrate, an Al-doped GaN layer formed on the high resistance nitride semiconductor layer and having an Al content of 0.1˜1%, an undoped GaN ...	07/15/2008
7372091	Selective epitaxy vertical integrated circuit components Integrated circuit components are described that are formed using selective epitaxy such that the integrated circuit components, such as transistors, are vertically oriented. These structures have regions that are doped in situ during selective epitaxial growth of t...	05/13/2008
7326971	Gallium nitride based high-electron mobility devices A heterojunction device includes a first layer of p-type aluminum gallium nitride; a second layer of undoped gallium nitride on the first layer; a third layer of aluminum gallium nitride on the second layer; and an electron gas between the second and third layers. A...	02/05/2008
7304331	Nitride semiconductor device such as transverse power FET for high frequency signal amplification or power control A nitride semiconductor device according to one embodiment of the present invention includes: a non-doped first aluminum gallium nitride (AlxGa1-xN (0≦x≦1)) layer which is formed as a channel layer; a non-doped or n type second aluminum gal...	12/04/2007
7193280	Indium oxide conductive film structures One-transistor ferroelectric memory devices using an indium oxide film (In2O3), an In2O3 film structure, and corresponding fabrication methods have been provided. The method for controlling resistivity in an In2...	03/20/2007
6699760	Method for growing layers of group III-nitride semiconductor having electrically passivated threading defects One method includes epitaxially growing a layer of group III-nitride semiconductor under growth conditions that cause a growth surface to be rough. The method also includes performing an epitaxial growth of a second layer of group III-nitride semiconducto...	03/02/2004
6472685	Semiconductor device A first silicon layer (Si layer), a second silicon layer (Si1 Cy layer) containing carbon and a third silicon layer not containing carbon are stacked in this order on a silicon substrate. Since the lattice constant of the Si1-y	10/29/2002
6225196	High electron mobility transistor and method of fabricating the same There is provided a field effect transistor including (a) an amorphous semiconductor layer made of amorphous silicon hydride containing impurities doped therein, (b) a semiconductor layer made of single crystal silicon having electron affinity greater tha...	05/01/2001
6140169	Method for manufacturing field effect transistor A GaN-type field effect transistor exhibits a large input amplitude by using a gate insulating film. A channel layer and a gate insulating film are sequentially laminated on a substrate with a buffer layer therebetween. A gate electrode is formed on the g...	10/31/2000
6049091	High electron mobility transistor There is provided a field effect transistor including (a) an amorphous semiconductor layer made of amorphous silicon hydride containing impurities doped therein, (b) a semiconductor layer made of single crystal silicon having an electron affinity greater ...	04/11/2000
6037615	Metal semiconductor FET having doped A1GaAs layer between channel layer and A1GaAs buffer layer A metal-semiconductor field effect transistor includes an AlGaAs buffer layer made of Alx Ga1-x As, wherein 0	03/14/2000
5986291	Field effect devices The channel region of the FET device has a first portion adjacent the source which has a higher bandgap energy or a higher electron affinity than a remaining portion of the channel. A quasi-electric field in the channel near the source is intensified and ...	11/16/1999
5929467	Field effect transistor with nitride compound A GaN-type field effect transistor exhibits a large input amplitude by using a gate insulating film. A channel layer and a gate insulating film are sequentially laminated on a substrate with a buffer layer therebetween. A gate electrode is formed on the g...	07/27/1999
5880484	Lateral resonant tunneling transistor having two non-symmetric quantum dots A lateral resonant tunneling transistor having two non-symmetric quantum dots is disclosed. When a negative voltage is supplied to each plurality of thin split gates, two non-symmetric quantum dots are formed owing to the formation of the potential barrie...	03/09/1999
5677554	FET having a dielectrically isolated gate connect A HIGFET having a gate with a pad which is isolated from the FET heterostructure wafer by a dielectric layer to minimize leakage current between the gate and the wafer. The method of production of this device involves application of the gate metal only ov...	10/14/1997
5455183	Method for fabricating a FET having a dielectrically isolated gate connect A HIGFET having a gate with a pad which is isolated from the FET heterostructure wafer by a dielectric layer to minimize leakage current between the gate and the wafer. The method of production of this device involves application of the gate metal only ov...	10/03/1995
5367183	Semiconductor device with complementary transistors Disclosed is a system with at least two complementary transistors, having n and p channels but comprising a heterostructure of junctions between III-V group materials. In order to balance the threshold voltages in the two channels, namely the n (2DEG) and...	11/22/1994
5290719	Method of making complementary heterostructure field effect transistors Complementary heterostructure field effect transistors (30) with complementary devices having complementary gates (40, 50) and threshold adjusting dopings are disclosed. Preferred embodiment devices include a p+ gate (50) formed by diffusion of...	03/01/1994
5214298	Complementary heterostructure field effect transistors Complementary heterostructure field effect transistors (30) with complementary devices having complementary gates (40, 50) and threshold adjusting dopings are disclosed. Preferred embodiment devices include a p+ gate (50) formed by diffusion of...	05/25/1993
5124762	GaAs heterostructure metal-insulator-semiconductor integrated circuit technology Heterostructure metal insulator semiconductor integrated circuit technology resulting in, for instance, GaAs field-effect-transistors having much less gate current leakage and greater voltage range than like technology of the related art....	06/23/1992
5051791	Apparatus comprising refractive means for elections The disclosed novel solid state electronic devices comprise a two-dimensional electron gas (2DEG), emission means of ballistic 2DEG electrons, collection means of 2DEG electrons, and control means disposed between the emissions means and the collection me...	09/24/1991
4965645	Saturable charge FET A new gallium arsenide gate heterojunction FET is disclosed. The gate is a multi-layer structure including an intermediate carrier depletable layer. Upon applying a gate voltage, the intermediate layer becomes depleted thereby effectively increasing the g...	10/23/1990
4866491	Heterojunction field effect transistor having gate threshold voltage capability A field effect transistor comprising a semiconductor channel region; an undoped semiconductor material region adjacent the channel region; a second semiconductor material region separated from the channel region; and a region of semiconductor material adj...	09/12/1989
4814851	High transconductance complementary (Al,Ga)As/gas heterostructure insulated gate field-effect transistor A complementary (Al,Ga)As/GaAs heterostructure insulated gate field-effect transistor (HIGFET) approach is described in which both the n-channel and p-channel transistors utilize a two-dimensional electron (hole) gas in undoped high mobility channels to f...	03/21/1989
4732870	Method of making complementary field effect transistors A semiconductor device, e.g., a complementary circuit comprising an n-channel transistor (Qn) utilizing a two-dimensional electron gas and a p-channel transistor (Qp) utilizing a two-dimensional hole gas, comprises: a semi-insulating...	03/22/1988
4729000	Low power AlGaAs/GaAs complementary FETs incorporating InGaAs n-channel gates A low power complementary (Al,Ga)As/GaAs heterostructure insulated gate field-effect transistor (HIGFET) approach is described in which the n-channel transistor utilizes an Inx Ga1-x As semiconductor gate to reduce threshold voltage ...	03/01/1988
4673959	Heterojunction FET with doubly-doped channel There is disclosed a semiconductor device comprising at least first and second semiconductor layers positioned to form a hetero-junction therebetween, such a hetero-junction being adapted to form a channel, means for controlling carriers, and source and d...	06/16/1987
4616242	Enhancement and depletion mode selection layer for field effect transistor A field effect transistor structure suitable for use in an array of such structures disposed on a common substrate (14) is formed with a source terminal (22), a drain (24) terminal, and a gate terminal (26) upon an upper surface of a semiconductor chip. T...	10/07/1986
4605945	Semiconductor device In a semiconductor device having at least a first semiconductor layer and a second semiconductor layer which are arranged so as to form a heterojunction, an edge of a conduction band of the first semiconductor layer being positioned lower in energy than a...	08/12/1986
4583105	Double heterojunction FET with ohmic semiconductor gate and controllable low threshold voltage This invention relates to an improved heterojunction FET. More specifically the invention is directed to a heterojunction FET device in which the contact to the semiconductor gate is ohmic in character. The gate and channel regions of the FET have the sam...	04/15/1986
4559547	Semiconductor device The semiconductor device of the present invention is characterized by a device consisting of at least a heterojunction formed by the first semiconductor layer and the second semiconductor layer where the forbidden band gap of the said first semiconductor ...	12/17/1985

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Class 257/E29.252 - With direct single heterostructure (i.e., with wide bandgap layer formed on top of active layer (e.g., direct single heterostructure MIS-like HEMT)) (EPO)