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| Number | Title | Issue Date |
| 7432538 | Field-effect transistor A field-effect transistor includes a channel layer having a channel and a carrier supply layer, disposed on the channel layer, containing a semiconductor represented by the formula AlxGa1-xN, wherein x is greater than 0.04 and less than 0.45. T... | 10/07/2008 |
| 7361536 | Method of fabrication of a field effect transistor with materialistically different two etch stop layers in an enhanced mode transistor and an depletion mode transistor A semiconductor structure a structure with an enhancement mode transistor device disposed in a first region and depletion mode transistor device disposed in a laterally displaced second region. The structure has a channel layer for the depletion mode and enhancement... | 04/22/2008 |
| 7355215 | Field effect transistors (FETs) having multi-watt output power at millimeter-wave frequencies High electron mobility transistors (HEMT) are provided having an output power of greater than 3.0 Watts when operated at a frequency of at least 30 GHz. The HEMT has a power added efficiency (PAE) of at least about 20 percent and/or a gain of at least about 7.5 dB. ... | 04/08/2008 |
| 7352008 | Heterostructure with rear-face donor doping The present invention relates to a field effect transistor having heterostructure with a buffer layer or substrate. A channel is arranged on the buffer layer or on the substrate, and a capping layer is arranged on the channel. The channel consists of a piezopolar ma... | 04/01/2008 |
| 7253454 | High electron mobility transistor A HEMT device including a GaN channel structure including a very thin (Al,In,Ga)N subchannel layer that is disposed between a first GaN channel layer and a second GaN channel layer, to effect band bending induced from the piezoelectric and spontaneous charges associ... | 08/07/2007 |
| 7247893 | Non-planar nitride-based heterostructure field effect transistor A method for fabricating a non-planar heterostructure field effect transistor using group III-nitride materials with consistent repeatable results is disclosed. The method provides a substrate on which at least one layer of semiconductor material is deposited. An Al... | 07/24/2007 |
| 7244973 | Field-effect semiconductor device and method for making the same A method for making a filed-effect semiconductor device includes the steps of forming a gate electrode on a semiconductor layer composed of a gallium nitride-based compound semiconductor represented by the formula AlxInyGa1−x−yN,... | 07/17/2007 |
| 7199408 | Semiconductor multilayer structure, semiconductor device and HEMT device A semiconductor device includes an underlying layer made of a group-III nitride containing at least Al and formed on a substrate, and a group of stacked semiconductor layers including a first semiconductor layer made of a group-III nitride, preferably GaN, a second ... | 04/03/2007 |
| 6703638 | Enhancement and depletion-mode phemt device having two ingap etch-stop layers A depletion/enhancement PHEMT device structure is provided. The structure comprises: (a) a semiconductor substrate; (b) a buffer region comprising one or more semiconductor buffer layers over the substrate; (c) a III-V semiconductor channel layer over the... | 03/09/2004 |
| 6664575 | GaInP stacked layer structure and field-effect transistor manufactured using the same A GaInP stacked layer structure 1 having a GaAs single crystal substrate 10 having stacked on the surface thereof at least a buffer layer 11, an electron channel layer 12 composed of GaX In1-X As (0ࣘXࣘ1), a spacer layer 13 compos... | 12/16/2003 |
| 6653668 | Radio frequency modules and modules for moving target detection It is an object of the present invention to provide a radio frequency module incorporating an MMIC that has a high S/N ratio while ensuring a high output. A radio frequency module according to the present invention incorporates an MMIC having a field effe... | 11/25/2003 |
| 6646293 | Structure for fabricating high electron mobility transistors utilizing the formation of complaint substrates High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. An accommodating buffer layer comprises a la... | 11/11/2003 |
| 6639255 | GaN-based HFET having a surface-leakage reducing cap layer A semiconductor device includes: a substrate; a buffer layer including GaN formed on the substrate, wherein: surfaces of the buffer layer are c facets of Ga atoms; a channel layer including GaN or InGaN formed on the buffer layer, wherein: surfaces of the... | 10/28/2003 |
| 6624440 | Field effect transistor An FET (Field Effect Transistor) has an epitaxial wafer including an Al0.2 Ga0.8 As gate contact layer. A GaAs gate buried layer doped with Si, Al0.2 Ga0.8 As wide-recess stopper layer doped with Si, an undoped ... | 09/23/2003 |
| 6624452 | Gallium nitride-based HFET and a method for fabricating a gallium nitride-based HFET A GaN-based HFET includes a set of layers all having a common face polarity, i.e., all being either Ga-face or N-face. One of the layers is a thin barrier layer having a first face with a positive charge and a second face with a negative charge thereby ca... | 09/23/2003 |
| 6593193 | Semiconductor device and method for fabricating the same An insulating-gate semiconductor device has a first nitride semiconductor layer formed over a substrate and an insulating oxidation layer obtained by oxidizing a second nitride semiconductor layer formed on the first nitride semiconductor layer. A gate el... | 07/15/2003 |
| 6586781 | Group III nitride based FETs and HEMTs with reduced trapping and method for producing the same New Group III nitride based field effect transistors and high electron mobility transistors are disclosed that provide enhanced high frequency response characteristics. The preferred transistors are made from GaN/AlGaN and have a dielectric layer on the s... | 07/01/2003 |
| 6583454 | Nitride based transistors on semi-insulating silicon carbide substrates A high electron mobility transistor (HEMT) is disclosed that includes a semi-insulating silicon carbide substrate, an aluminum nitride buffer layer on the substrate, an insulating gallium nitride layer on the buffer layer, an active structure of aluminum ... | 06/24/2003 |
| 6555850 | Field-effect transistor A field-effect transistor has a composite channel structure having a first channel layer containing GaInP semiconductor and a second channel layer containing GaAs semiconductor. When the electric field is low in the channel, a channel current is primarily... | 04/29/2003 |
| 6548333 | Aluminum gallium nitride/gallium nitride high electron mobility transistors having a gate contact on a gallium nitride based cap segment High electron mobility transistors (HEMTs) and methods of fabricating HEMTs are provided Devices according to embodiments of the present invention include a gallium nitride (GaN) channel layer and an aluminum gallium nitride (AlGaN) barrier layer on the c... | 04/15/2003 |
| 6545340 | Semiconductor device A semiconductor device of the invention in the form of a superlattice-heterojunction bipolar transistor (SL-HBT) 10 incorporates a superlattice region 16 within an emitter mesa 21. The superlattice region 16 provides a non-linear response to a sufficientl... | 04/08/2003 |
| 6531718 | Semiconductor device A semiconductor device includes: a substrate; a buffer layer including GaN formed on the substrate, wherein surfaces of the buffer layer are c facets of Ga atoms; a separating layer including (InX Al1-X)Y Ga1-Y ... | 03/11/2003 |
| 6525346 | Semiconductor device and its manufacturing method capable of reducing low frequency noise In a semiconductor device, a first semiconductor layer is formed on a semiconductor substrate. A second semiconductor layer is formed on a part of the first semiconductor layer, and a third semiconductor layer is formed on a part of the second semiconduct... | 02/25/2003 |
| 6507051 | Semiconductor integrated circuit device A semiconductor device includes a semiconductor layer structure, and gate, drain and source electrodes provided on the semiconductor layer structure, the gate electrode being located between the drain and source electrodes. A depletion modulating part is ... | 01/14/2003 |
| 6492669 | Semiconductor device with schottky electrode having high schottky barrier A carrier travel layer is formed on the substrate of a semiconductor device with a buffer layer interposed, and a spacer layer and carrier supply layer are then formed on this carrier travel layer. On the carrier supply layer are provided a source electro... | 12/10/2002 |
| 6489628 | High electron mobility transistor and power amplifier According to this invention, a group III nitride inverted high electron mobility transistor, and a power amplifier using the same are provided. A transistor and power amplifier according to this invention are characterized in that the lattice constant of ... | 12/03/2002 |
| 6486502 | Nitride based transistors on semi-insulating silicon carbide substrates A high electron mobility transistor (HEMT) (10) is disclosed that includes a semi-insulating silicon carbide substrate (11), an aluminum nitride buffer layer (12) on the substrate, an insulating gallium nitride layer (13) on the buffer layer, an active st... | 11/26/2002 |
| 6479844 | Modulation doped thyristor and complementary transistor combination for a monolithic optoelectronic integrated circuit A family of high speed transistors and optoelectronic devices is obtained on a monolithic substrate with an epitaxial layer structure comprised of two modulation doped transistor structures, one inverted with respect to the other. The transistor structure... | 11/12/2002 |
| 6469326 | Radio frequency modules and modules for moving target detection It is an object of the present invention to provide a radio frequency module incorporating an MMIC that has a high S/N ratio while ensuring a high output. A radio frequency module according to the present invention incorporates an MMIC having a field effe... | 10/22/2002 |
| 6465814 | Semiconductor device A semiconductor device of the present invention comprises Al0.3 Ga0.7 N layer 4 and Al0.1 Ga0.9 N layer 5 having different Al contents as an electron supply layer on GaN layer 6 serving as an active layer. An ar... | 10/15/2002 |
| 6462361 | GaInP epitaxial stacking structure and fabrication method thereof, and a FET transistor using this structure A GaInP epitaxial stacking structure and fabrication method thereof, and a FET transistor using this structure are provided wherein, stacked upon a GaAs single-crystal substrate are at least a buffer layer, a GaZ In1-Z As (0 | 10/08/2002 |
| 6448119 | Field effect transistor and method of fabricating the same There is provided a field effect transistor including a semi-insulating semiconductor substrate formed with a recess at a region in which a gate is to be formed, a gate base layer formed on the recess and composed of one of an InP layer and a plurality of... | 09/10/2002 |
| 6417519 | Field effect transistor with suppressed threshold change A carrier transit layer made of group III-V compound semiconductor is formed on a semiconductor substrate. A carrier supply layer is formed on the carrier transit layer. The carrier supply layer supplies carriers for generating two-dimensional carrier gas... | 07/09/2002 |
| 6414340 | Field effect transistor and method for making the same The field effect device consisting of a substrate, a conducting backplane formed in the substrate, a source and a drain disposed above the conductive backplane, a gate insultatively disposed above the substrate between the source and drain, and a backgate... | 07/02/2002 |
| 6410947 | Semiconductor device and process of production of same A semiconductor device operable with a single positive power source, enabling an increase in efficiency, and improved in high-frequency characteristics by lowering the resistivity of a gate contact, including a carrier run layer formed on a substrate for ... | 06/25/2002 |
| 6391696 | Field effect transistor and method of manufacturing thereof There is disclosed a field effect transistor having a two-stage recess structure formed upon an InP substrate and showing stable device characteristics and a low contact resistance. The FET is manufactured as follows. Upon an InP substrate 101, a channel ... | 05/21/2002 |
| 6329231 | Distributed constant circuit with active element An active element has first and second regions and a control electrode. Carriers move between the first and second regions in a first direction. A motion of carriers is controlled by an electric signal applied to the control electrode. The first and secon... | 12/11/2001 |
| 6316793 | Nitride based transistors on semi-insulating silicon carbide substrates A high electron mobility transistor (HEMT) is disclosed that includes a semi-insulating silicon carbide substrate, an aluminum nitride buffer layer on the substrate, an insulating gallium nitride layer on the buffer layer, an active structure of aluminum ... | 11/13/2001 |
| 6278144 | Field-effect transistor and method for manufacturing the field effect transistor A high power FET has a first conductivity epitaxial layer overlying a semi-insulating substrate, a second conductivity epitaxial layer, a gate being in Schottky contact with the second conductivity layer, and source and drain regions being in ohmic contac... | 08/21/2001 |
| 6258639 | Sintered gate schottky barrier fet passivated by a degradation-stop layer A transistor structure with a degradation-stop layer that prevents degradation of underlying semiconductor layers while minimizing any increase in the gate leakage current is disclosed. In one embodiment, a transistor structure includes: a substrate; a ch... | 07/10/2001 |
