Class 257/E29.242 - Field-effect transistor (EPO)

Subclass of Class 257 - Active solid-state devices (e.g., transistors, solid-state diodes)
Definition: This subclass is indented under subclass E29.226. This subclass
No. of patents: 99
Last issue date: 09/09/2008

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Number	Title	Issue Date
7422953	Semiconductor device and method of manufacturing the same There is provided a method of manufacturing a semiconductor device, including forming a structure including a first layer containing Si and a metal oxide layer in contact with the first layer, the metal oxide layer having a dielectric constant higher than that of si...	09/09/2008
7397070	Self-aligned transistor In one embodiment, a transistor is formed to use two conductors to make electrical connection to one of the active regions of the transistor. ...	07/08/2008
7372101	Sub-lithographics opening for back contact or back gate A low resistance buried back contact for SOI devices. A trench is etched in an insulating layer at minimum lithographic dimension, and sidewalls are deposited in the trench to decrease its width to sublithographic dimension. Conducting material is deposited in the t...	05/13/2008
7321142	Field effect transistor On an SiC single crystal substrate, an electric field relaxation layer and a p− type buffer layer are formed. The electric field relaxation layer is formed between the p− type buffer layer and the SiC single crystal substrate to contact SiC single crystal substr...	01/22/2008
7300850	Method of forming a self-aligned transistor In one embodiment, a transistor is formed to use two conductors to make electrical connection to one of the active regions of the transistor. ...	11/27/2007
7268398	ESD protection cell with active pwell resistance control In an NMOS device, the turn-on voltage or the triggering voltage is reduced by adding an NBL connected to an n-sinker and contacted through an n+ region, which is connected to a bias voltage. The bias voltage may be provided by the drain contact or by a separate bia...	09/11/2007
7235827	Vertical power JFET with low on-resistance for high voltage applications A junction field effect transistor (JFET) has a gate region, drain region, and a source region. An epitaxial region having a first conductivity type is disposed over the drain region. The first conductivity type is N-type semiconductor material. The gate region is d...	06/26/2007
7183596	Composite gate structure in an integrated circuit An integrated circuit having composite gate structures and a method of forming the same are provided. The integrated circuit includes a first MOS device, a second MOS device and a third MOS device. The gate stack of the first MOS device includes a high-k gate dielec...	02/27/2007
7166876	MOSFET with electrostatic discharge protection structure and method of fabrication A semiconductor circuit comprises a semiconductor substrate, a semiconductor device having a drain region disposed in the substrate, and a reverse doped region laterally adjacent and laterally contacting the drain region wherein the reverse doped region has an oppos...	01/23/2007
7166889	Semiconductor memory device having a gate electrode and a method of manufacturing thereof A first aspect of the present invention is providing a non-volatile semiconductor memory device, comprising: a memory cell having a tunnel oxide layer formed on a semiconductor substrate, a floating gate formed on the tunnel oxide layer, a control gate to which volt...	01/23/2007
6600192	Vertical field-effect semiconductor device with buried gate region A buried gate region, a buried gate contact region and a gate contact region are provided on an SiC substrate. Thereby, a depletion layer expands in the channel region, and a high withstand voltage is attained in the normally off state. By applying a volt...	07/29/2003
6528370	Semiconductor device and method of manufacturing the same Provided are a semiconductor device which shows excellent negative differential conductance or negative transconductance and is manufactured without a complicated manufacturing process and a method of manufacturing the same. The semiconductor device inclu...	03/04/2003
6469315	Semiconductor device and method of manufacturing the same Provided are a semiconductor device which shows excellent negative differential conductance or negative transconductance and is manufactured without a complicated manufacturing process and a method of manufacturing the same. The semiconductor device inclu...	10/22/2002
6465844	Power semiconductor device and method of manufacturing the same A power semiconductor device has a plurality of U-shaped buried layers buried in a drift layer and made of either an insulating material or a semiconductor having a wider bandgap than that of the semiconductor of the drift layer. The ratio of the product ...	10/15/2002
6351004	Tunneling transistor applicable to nonvolatile memory A tunneling transistor is provided as an effective means for miniaturization of a semiconductor integrated circuit having nonvolatile memory. An insulating layer is disposed on a silicon substrate. A source and a drain are disposed on the insulating layer...	02/26/2002
6320220	Quantum tunneling effect device and semiconductor composite substrate A new switching element and a circuit device and the like using the same element are provided, which comprises semiconductor in which a channel region is formed at an interface with an insulating film, first and second terminals S, D, which are located in...	11/20/2001
6291242	Methods for generating polynucleotides having desired characteristics by iterative selection and recombination A method for DNA reassembly after random fragmentation, and its application to mutagenesis of nucleic acid sequences by in vitro or in vivo recombination is described. In particular, a method for the production of nucleic acid fragments or polynucleotides...	09/18/2001
6211531	Controllable conduction device A controllable conduction device in the form of a transistor comprises source and drain regions 5, 2 between which extends a conduction path P for charge carriers, a gate 4 for controlling charge carrier flow along the conduction path and a multiple layer...	04/03/2001
6198113	Electrostatically operated tunneling transistor A transistor operated by changing the electrostatic potential of an island disposed between two tunnel junctions. The transistor has an island of material which has a band gap (e.g. semiconductor material). Source and drain contacts are provided. The tran...	03/06/2001
6169308	Semiconductor memory device and manufacturing method thereof A high speed/large capacity DRAM (Dynamic Random Access Memory) is generally refreshed each 0.1 sec because it loses information stored therein due to a leakage current. The DRAM also loses information stored therein upon cutoff of a power source. Meanwhi...	01/02/2001
6139483	Method of forming lateral resonant tunneling devices A method of fabricating a quantum well device is presented which includes forming one or more quantum wells 48 by forming an epitaxy mask followed by selective deposition of one or more epitaxial layers. Selective deposition is accomplished by forming an ...	10/31/2000
6111288	Quantum tunneling effect device and semiconductor composite substrate A new switching element and a circuit device and the like using the same element are provided, which comprises semiconductor in which a channel region is formed at an interface with an insulating film, first and second terminals S, D, which are located in...	08/29/2000
6080996	Unipolar three-terminal resonant-tunneling transistor The present invention discloses both an n+ and a p+ unipolar, three-terminal, resonant-tunneling transistor that can be operated as a hot-electron transistor or a field effect transistor at temperatures at least as low as 77 degree Kelvin. The doped first...	06/27/2000
6060723	Controllable conduction device A controllable conduction device in the form of a transistor comprises source and drain regions 5, 2 between which extends a conduction path P for charge carriers, a gate 4 for controlling charge carrier flow along the conduction path and a multiple layer...	05/09/2000
6043518	Multiple-function GaAs transistors with very strong negative differential resistance phenomena Disclosed in this invention is a new four-terminal type and multiple delta-doped transistors with multiple functions grown by low-pressure metalorganic chemical vapor deposition (LP-MOCVD). All the epilayers are grown on n+ -GaAs substrates. Th...	03/28/2000
6031245	Semiconductor device A semiconductor device is presented which exhibits both interband and intraband tunnelling. The device comprises two active layers (21, 23) which are sandwiched between two barrier layers (3, 5). These layers are located between first and second terminals...	02/29/2000
5994714	Quantum diffraction transistor The present invention discloses a technique for applying diffraction characteristic of electrons to a two-dimensional electronic device to manufacture multi-functional transistor having various ON/OFF states. A quantum diffraction transistor according to ...	11/30/1999
5989947	Method for the manufacture of quantum structures, in particular quantum dots and tunnel barriers as well as components with such quantum structures A method of manufacturing quantum structures, in particular quantum dots and tunnel barriers and also a component with such quantum structures wherein in that a substrate is structured by the intentional formation of trenches so that material remains betw...	11/23/1999
5962864	Gated resonant tunneling device and fabricating method thereof A semiconductor device comprises mutually separated first and third barrier layers interposed between the first and second patterned terminals. The device operates by the resonant tunneling of carriers from the second terminal to the first terminal. The f...	10/05/1999
5952692	Memory device with improved charge storage barrier structure A memory device includes a memory node (1) to which charge is written through a tunnel barrier configuration (2) from a control electrode (9). The stored charge effects the conductivity of a source/drain path (4) and data is read by monitoring the conduct...	09/14/1999
5949103	MOSFET with tunneling insulation and fabrication method thereof A tunneling insulation film MOSFET and a fabrication method for a tunneling insulation film MOSFET avoid a short channel effect and prevent a punchthrough phenomenon by forming a tunneling insulation film between a channel area and one of source area and ...	09/07/1999
5942790	Charge effect transistor and a method for manufacturing the same A new conceptional transistor and a method for manufacturing, which increases the integration of semiconductor devices using conventional MOS devices are provided. The present invention provides a transistor in which a structure of metal-insulator film-me...	08/24/1999
5940696	Method of manufacturing a quantum diffraction transistor The present invention discloses a technique for applying diffraction characteristics of electrons to a two-dimensional electronic device to manufacture multi-functional transistor having various ON/OFF states. Method of manufacturing a quantum diffraction...	08/17/1999
5895931	Semiconductor device A barrier layer (AlAs) is formed on a source layer (n-GaAs), and a drain layer (n-GaAs) and a gate layer (p-GaAs) adjacent to the drain layer are formed on the barrier layer. If the drain layer is biased to a plus voltage with the source layer, then a tun...	04/20/1999
5880484	Lateral resonant tunneling transistor having two non-symmetric quantum dots A lateral resonant tunneling transistor having two non-symmetric quantum dots is disclosed. When a negative voltage is supplied to each plurality of thin split gates, two non-symmetric quantum dots are formed owing to the formation of the potential barrie...	03/09/1999
5856681	Semiconductor device The present invention relates to a semiconductor device in which an electric resistance in a carrier path is modulated by changing a voltage applied to the carrier path. The semiconductor device is provided with a semiconductor layer in which conductive p...	01/05/1999
5834793	Semiconductor devices A semiconductor device has a semiconductor substrate, a source and a drain region, each formed at the surface of said semiconductor substrate, and each having a potential barrier with respect to the semiconductor substrate. A gate electrode is formed on t...	11/10/1998
5825049	Resonant tunneling device with two-dimensional quantum well emitter and base layers A double electron layer tunneling device is presented. Electrons tunnel from a two dimensional emitter layer to a two dimensional tunneling layer and continue traveling to a collector at a lower voltage. The emitter layer is interrupted by an isolation et...	10/20/1998
5804475	Method of forming an interband lateral resonant tunneling transistor This invention describes a nanometer scale interband lateral resonant tunneling transistor, and the method for producing the same, with lateral geometry, good fanout properties and suitable for incorporation into large-scale integrated circuits. The trans...	09/08/1998
5793055	Hybrid electronic devices, particularly Josephson transistors A step junction is provided for superconductor/semiconductor heterostructure hybrid devices like tunneling transistors, in a body of p-InAs with a vertical side connecting the low plateau and high plateau on which superconductors, preferably of niobium, a...	08/11/1998

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Class 257/E29.242 - Field-effect transistor (EPO)