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| Number | Title | Issue Date |
| 7365372 | Semiconductor device and method for manufacturing semiconductor device The present invention is to provide a semiconductor device including: a semiconductor layer that has a first-conductivity-type region, a second-conductivity-type region, a first-conductivity-type region, and a second-conductivity-type region that are adjacent to eac... | 04/29/2008 |
| 7148522 | Thyristor-based SRAM An integrated circuit structure includes a semiconductor substrate and a thyristor formed thereon. The thyristor has at least four layers, with three P-N junctions therebetween. At least two of the layers are formed horizontally and at least two of the layers are fo... | 12/12/2006 |
| 6660569 | Method for producing a power semiconductor device with a stop zone A method of fabricating a silicon power semiconductor with a stop zone includes forming a stop zone by driving oxygen into a semiconductor substrate in a targeted manner and subsequently heating the oxygen with the semiconductor substrate to form thermal ... | 12/09/2003 |
| 6656774 | Method to enhance operating characteristics of FET, IGBT, and MCT structures Doping of the P type base region in a MOSFET or an IGBT with a combination of boron and one or more of indium, aluminum and gallium, provides a structure having a lower P type doping level in the channel portion of the structure than in the remainder of t... | 12/02/2003 |
| 6638826 | Power MOS device with buried gate An MOS power device a substrate comprises an upper layer having an upper surface and an underlying drain region, a well region of a first conductance type disposed in the upper layer over the drain region, and a plurality of spaced apart buried gates, eac... | 10/28/2003 |
| 6472693 | Semiconductor device and method of manufacturing the same The present invention relates to a semiconductor device and a method of manufacturing the same, and particularly, an object of the present invention is to reduce an ON voltage while ensuring a wide operating area and sustaining a high breakdown voltage. T... | 10/29/2002 |
| 6445035 | Power MOS device with buried gate and groove An MOS power device a substrate comprises an upper layer having an upper surface and an underlying drain region, a well region of a first conductance type disposed in the upper layer over the drain region, and a plurality of spaced apart buried gates, eac... | 09/03/2002 |
| 6441408 | Power semiconductor component for high reverse voltages A power semiconductor components has stop zones. In order to optimize the static and dynamic losses of the power semiconductor components, the stop zone is provided with donors which have at least one donor level which lies within the band gap of silicon ... | 08/27/2002 |
| 6423987 | Self-protect thyristor With a self-protect thyristor, having a MOSFET (M1) that is connected in series with the thyristor and a second, self-controlled MOSFET (M2) between the p-base of the thyristor and the external cathode (KA), several unit cells for the thyristor are arrang... | 07/23/2002 |
| 6278140 | Insulated gate thyristor An insulated gate thyristor is provided which includes: a first-conductivity-type base layer, first and second-conductivity-type base regions formed in the base layer, a first-conductivity-type source region formed in the first base region, a first-conduc... | 08/21/2001 |
| 6236069 | Insulated-gate thyristor Disclosed herein is an insulated-gate thyristor comprising a base layer of a first conductivity type, having first and second major surfaces, a first main-electrode region of the first conductivity type, formed in the first major surface of the base layer... | 05/22/2001 |
| 6229196 | Semiconductor device and fabrication method thereof The semiconductor device includes a semiconductor base body (11) formed of a damaged layer (102) serving as a gettering layer, a P+ collector layer (103), an N+ buffer layer (104), and an N- layer (105) laid one on top of ... | 05/08/2001 |
| 6188267 | Normally conducting dual thyristor The present invention relates to a component forming a normally on dual thyristor, which can be turned off by a voltage pulse on the control electrode, including a thyristor, a first depletion MOS transistor, the gate of which is connected to the source, ... | 02/13/2001 |
| 6169299 | Semiconductor device The MOS gate thyristor of the present invention has a p+ type anode layer (first semiconductor layer), an n- type base region (second semiconductor layer) with the function of acting as a drift layer, a p- type base region... | 01/02/2001 |
| 6118141 | Emitter-switched thyristor In an emitter-switched thyristor with a main thyristor (TH) composed of a p+ anode emitter (1), a drift zone (3') of opposite conductivity type, a zone (4) which has in the switched-off state a blocking zone with respect to zone (3) and an emitter zone (5... | 09/12/2000 |
| 6110763 | One mask, power semiconductor device fabrication process A method of fabricating a MOS controlled thyristor (MCT) semiconductor power device which reduces process time, reduces cell size, and increases the density of turn-off channels. The method uses a single, dopant-opaque mask to form MCT structure above the... | 08/29/2000 |
| 6091087 | Insulated gate thyristor An insulated gate thyristor includes a first-conductivity-type base layer having a high resistivity, first and second second-conductivity-type base regions formed in a surface layer of the first-conductivity-type base layer, a first-conductivity-type sour... | 07/18/2000 |
| 6054728 | Insulated gate thyristor An insulated gate thyristor is provided which includes: a first-conductivity-type base layer, first and second second-conductivity-type base regions formed in the base layer, a first-conductivity-type source region formed in the first base region, a ... | 04/25/2000 |
| 5998811 | Trench emitter controlled thyristor A trench emitter controlled thyristor 30 having a collector layer 32, a drift layer 34, a body layer 36, and a floating layer 38. Each of the layers 32, 34, 36, and 38 contacts the adjacent layer(s). The floating layer 38 does not cover the entirety of th... | 12/07/1999 |
| 5981984 | Insulated gate thyristor An insulated gate thyristor includes a first-conductivity-type base layer having a high resistivity, first and second second-conductivity-type base regions formed in a surface layer of the first-conductivity-type base layer, a first-conductivity-type sour... | 11/09/1999 |
| 5977570 | Semiconductor device and manufacturing method thereof A pin diode is formed by a p+ collector region, an n type buffer region, an n- region and an n+ cathode region. A trench is formed from the surface of n+ cathode region through n+ cathode region t... | 11/02/1999 |
| 5939736 | Insulated gate thyristor A semiconductor device for conducting a in current across a cathode electrode and an anode electrode, includes a thyristor formed of an n+ floating region connected electrically to the cathode electrode, a p+ anode connected electric... | 08/17/1999 |
| 5936267 | Insulated gate thyristor Surfaces of a second p base region 6 and an n emitter region 8 are covered with an insulating film 19 and the second p base region 6 and a first p base region 4 are connected partially below a gate electrode 10. In a conventional EST, a potential differen... | 08/10/1999 |
| 5925900 | Emitter-switched thyristor having a floating ohmic contact The operating characteristics of emitter-switched thyristors (1) are improved by the addition of a floating ohmic contact (14) over adjacent regions of n+ and p+ type (15,16). In a lateral device, the floating ohmic contact (14) and the adjacent regions o... | 07/20/1999 |
| 5923051 | Field controlled semiconductor device of SiC and a method for production thereof A field controlled semiconductor device of SiC comprises superimposed in the order mentioned at least a drain (12), a highly doped substrate layer (1) and a low doped n-type drift layer (2). It has also a highly doped n-type source region layer (6) and a ... | 07/13/1999 |
| 5914503 | Insulated gate thyristor An insulated gate thyristor is provided in which an inversion layer is created beneath a gate electrode to which a voltage is applied. An emitter region of a first conductivity type is biased to the same potential as a first main electrode via a MOSFET ch... | 06/22/1999 |
| 5874751 | Insulated gate thyristor An insulated gate thyristor is provided which includes a first-conductivity-type base layer of high resistivity, first and second second-conductivity-type base regions formed in a surface layer of a first major surface of the first-conductivity-type base ... | 02/23/1999 |
| 5844259 | Vertical conduction MOS controlled thyristor with increased IGBT area and current limiting An MCT is formed as a four-layer device, using alternating cells of: (a) P diffusions in an N- wafer having lower N+ and P+ layers with N+ cathode regions in the P diffusions, and (b) shallow P+ diver... | 12/01/1998 |
| 5844258 | Emitter switched thyristor An emitter switched thyristor has an enlarged safe operating range. A semiconductor substrate of a first conductivity type (a p-type) is provided and a semiconductor region of a second conductivity type (an n-type) is formed on the substrate. A well regio... | 12/01/1998 |
| 5838026 | Insulated-gate semiconductor device An insulated-gate semiconductor device comprises a P type emitter layer, an N- high-resistive base layer formed on the P type emitter layer, and a P type base layer contacting the N- high-resistive base layer. A plurality of trench... | 11/17/1998 |
| 5828101 | Three-terminal semiconductor device and related semiconductor devices A semiconductor device has trenches formed on the surface of a semiconductor. The device passes a main current through a channel formed between the trenches and controls the main current with the use of gate electrodes buried in the trenches. The main cur... | 10/27/1998 |
| 5796124 | MOS gate controlled thyristor On one major surface of an n- -type semiconductor substrate, a p-type region is formed in a semiconductor substrate, and an n-type emitter region is formed in the p-type base region. A p-type source region is formed near the p-type base region.... | 08/18/1998 |
| 5793066 | Base resistance controlled thyristor structure with high-density layout for increased current capacity An insulated gate base resistance controlled thyristor with a high controllable current capability is described. The device has a high density of MOS-channels modulating the resistance of the base region of the NPN transistor of the thyristor structure. T... | 08/11/1998 |
| 5793065 | Insulated-gate thyristor Disclosed herein is an insulated-gate thyristor comprising a base layer of a first conductivity type, having first and second major surfaces, a first main-electrode region of the first conductivity type, formed in the first major surface of the base layer... | 08/11/1998 |
| 5777346 | Metal oxide semiconductor controlled thyristor with an on-field effect transistor in a trench One embodiment of a metal oxide semiconductor controlled thyristor in accordance with the present invention has a semiconductor wafer with opposing first and second surfaces. The wafer includes first through sixth sequential regions which are disposed one... | 07/07/1998 |
| 5773849 | Field of the invention A field controlled semiconductor device of SiC has a drain, a highly doped substrate layer on top of the drain and a low doped n-type drift layer on top of the substrate layer. A p-type base layer is located on the drift layer and a vertical trench extend... | 06/30/1998 |
| 5767555 | Compound semiconductor device controlled by MIS gate, driving method therefor and electric power conversion device using the compound semiconductor device and the driving method A compound semiconductor device including a MISFET and a thyristor connected in series wherein either the withstanding voltage between the MISFET p base layer and the thyristor p base layer is set lower than the withstanding voltage of the MISFET, the MIS... | 06/16/1998 |
| 5757034 | Emitter switched thyristor A thyristor structure in which the DMOSFET connecting the N+ emitter to the N- drift region is eliminated and instead replaced with a DMOSFET connecting the N+ cathode to the N- drift region providing the base drive for... | 05/26/1998 |
| 5757033 | Bidirectional thyristor with MOS turn-off capability with a single gate A bidirectional thyristor structure with a single MOS gate controlled turn off capability. In a vertical conduction embodiment, the device has a six layer structure including a backside diffusion. One vertical conduction structure includes a single body r... | 05/26/1998 |
| 5757036 | Semiconductor device with improved turn-off capability A four-region semiconductor device (that is, a p-n-p-n or n-p-n-p device) including at least one further region utilizes integral FET structure for diverting carriers away from an interior region of the device and shunting them to a main current-carrying ... | 05/26/1998 |
