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...Daniel Webster invented a "bull plow" to pull out tree stumps. It didn't catch on because it was huge and required four oxen to pull it!
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| Number | Title | Issue Date |
| 7408234 | Semiconductor device and method for manufacturing the same An object of the present invention is to provide a semiconductor device that is able to realize a low on-resistance maintaining a high drain-to-source breakdown voltage, and a method for manufacturing thereof, the present invention including: a supporting substrate;... | 08/05/2008 |
| 7339236 | Semiconductor device, driver circuit and manufacturing method of semiconductor device The present invention provides a semiconductor technology capable of suppressing an increase in threshold voltage of a transistor and, also, improving a withstand voltage between a source region and a drain region. Source and drain regions of a p channel type MOS tr... | 03/04/2008 |
| 7319257 | Power semiconductor device A power semiconductor device includes trenches disposed in a first base layer of a first conductivity type at intervals to partition main and dummy cells, at a position remote from a collector layer of a second conductivity type. In the main cell, a second base laye... | 01/15/2008 |
| 7233031 | Vertical power semiconductor component A vertical power semiconductor component, e.g. a diode or an IGBT, in which there are formed, on the rear side of a substrate, a rear side emitter or a cathode emitter and, over that, a rear side metal layer that at least partly covers the latter, is defined by the ... | 06/19/2007 |
| 7211861 | Insulated gate semiconductor device An insulated gate semiconductor device, includes an isolating structure shaped in a circulating section along the periphery of a semiconductor substrate to isolate that part from an inside device region, a peripheral diffusion region of the semiconductor substrate l... | 05/01/2007 |
| 7205605 | Semiconductor component and method of manufacturing A semiconductor component includes a semiconductor layer (110) having a trench (326). The trench has first and second sides. A portion (713) of the semiconductor layer has a conductivity type and a charge density. The semiconductor component als... | 04/17/2007 |
| 6703684 | Semiconductor device and method of forming a semiconductor device A power semiconductor device (10) has an active region that includes a drift region (20). At least a portion of the drift region (20) is provided in a membrane (16) which has opposed top and bottom surfaces (15,17). In one embodiment, the top surface (15)... | 03/09/2004 |
| 6696323 | Method of manufacturing semiconductor device having trench filled up with gate electrode In a semiconductor device, a p-type base region is provided in an n- -type substrate to extend from a principal surface of the substrate in a perpendicular direction to the principal surface. An n+ -type source region extends in the ... | 02/24/2004 |
| 6693327 | Lateral semiconductor component in thin-film SOI technology A lateral semiconductor element (10) in thin-film SOI technology comprises an insulator layer (14) which rests on a substrate (12) and is buried under a thin silicon film (16), on top of which the source, or anode, contact (18) and the drain, or cathode, ... | 02/17/2004 |
| 6642599 | Semiconductor device and method of manufacturing the same A high resistance n-type base layer is formed on a silicon substrate with an insulating layer made of a silicon oxide film therebetween. In the high resistance n-type base layer a p-ch MOS transistor is formed. The p-ch MOS transistor is electrically isol... | 11/04/2003 |
| 6627952 | Silicon oxide insulator (SOI) semiconductor having selectively linked body A silicon oxide insulator (SOI) device includes an SOI layer supported on a silicon substrate. A body region is disposed on the SOI layer, and the body region is characterized by a first conductivity type. Source and drain regions are juxtaposed with the ... | 09/30/2003 |
| 6614077 | Semiconductor device improved in ESD reliability In an LDMOS, a p+ -type anode layer is formed adjacent to an n+ -type drain layer. The anode layer makes no contribution to an operation of the LDMOS at a rated voltage and generates holes at the time of ESD. The holes flow into the ... | 09/02/2003 |
| 6580108 | Insulated gate bipolar transistor decreasing the gate resistance An insulated gate transistor comprising a first semiconductor region, a second semiconductor region includes plural portions, a third semiconductor region, a fourth semiconductor region, a first insulation layer, control electrodes, a first main electrode... | 06/17/2003 |
| 6529034 | Integrated series schottky and FET to allow negative drain voltage A high side driver chip for MOSgated devices which controls a non resistive, or non inductive load has a vertical conduction refresh MOSFET integrated into the chip for connecting a Vs node to ground to discharge the load capacitance. A Schottk... | 03/04/2003 |
| 6515302 | Power devices in wide bandgap semiconductor An insulated gate field effect transistor is disclosed. The transistor includes a semi-insulating silicon carbide substrate, an epitaxial layer of silicon carbide layer adjacent the semi-insulating substrate for providing a drift region having a first con... | 02/04/2003 |
| 6489653 | Lateral high-breakdown-voltage transistor A lateral high-breakdown-voltage transistor comprises an n- drain region and an n+ source region formed in a p- silicon substrate, separated from each other, a gate electrode formed on a channel, insulated from the substra... | 12/03/2002 |
| 6458667 | High power PMOS device An improved MOS transistor and method for making it are described. The MOS transistor's source and drain have a first conductivity type and are separated from each other by a first region having a second conductivity type opposite to the first conductivit... | 10/01/2002 |
| 6414370 | Semiconductor circuit preventing electromagnetic noise A semiconductor circuit or a semiconductor device has the current-voltage characteristic that, in a blocking-state of the semiconductor circuit or the semiconductor device, a current gently flows for values of a voltage equal to or greater than a first vo... | 07/02/2002 |
| 6404045 | IGBT and free-wheeling diode combination A combination of an IGBT and an antiparallel-connected freewheeling diode in which the IGBT die size is greater than about twice the diode die size. Preferably the diode die size is about 10%-25% of that of the IGBT. The respective die sizes of an IGBT an... | 06/11/2002 |
| 6388271 | Semiconductor component The power semiconductor components in prior art high-voltage smart power ICs frequently take up more than half of the total chip surface. To be able to produce the ICs more economically, the material consumption must be reduced, and hence, in particular, ... | 05/14/2002 |
| 6307235 | Another technique for gated lateral bipolar transistors An improved structure and method for gated lateral bipolar transistors are provided. Embodiments of the present invention capitalize on opposing sidewalls and adjacent conductive sidewall members to conserve available surface space on the semiconductor ch... | 10/23/2001 |
| 6236068 | Transistor component A transistor component and a method of producing the transistor component having at least one insulated-gate electrode and with lateral and vertical current flow. The transistor component is used for low-loss switching of high currents and is optionally d... | 05/22/2001 |
| 6218699 | Semiconductor component with adjustable current amplification based on a tunnel-current-controlled avalanche breakdown The component has a channel zone and an oppositely doped zone in a semiconductor substrate. The channel zone and a peripheral region of the first doped zone are separated by a gate dielectric from an overlying channel gate electrode. The first doped zone ... | 04/17/2001 |
| 6204717 | Semiconductor circuit and semiconductor device for use in equipment such as a power converting apparatus A semiconductor circuit or a semiconductor device has the current-voltage characteristic that, in a blocking-state of the semiconductor circuit or the semiconductor device, a current gently flows for values of a voltage equal to or greater than a first vo... | 03/20/2001 |
| 6177705 | High power PMOS device An improved MOS transistor and method for making it are described. The MOS transistor's source and drain have a first conductivity type and are separated from each other by a first region having a second conductivity type opposite to the first conductivit... | 01/23/2001 |
| 6144070 | High breakdown-voltage transistor with electrostatic discharge protection A transistor including a source region 506 in a semiconductor body 502; a bulk region 508 in the semiconductor body adjacent the source region; a drain region in the semiconductor body adjacent the bulk region but opposite the source region, the drain reg... | 11/07/2000 |
| 6111289 | Semiconductor device A semiconductor device has first and second electrical terminals. The device comprises at least one n/p or p/n first junction adjacent the first terminal, and at least one of the other of a p/n or n/p second junction adjacent the second terminal. It also ... | 08/29/2000 |
| 6072215 | Semiconductor device including lateral MOS element Disclosed is a semiconductor device including a lateral MOS element which comprises a p-type silicon substrate; a first semiconductor layer of an n-type constituting a drift region; a second semiconductor layer of the p-type selectively provided in the fi... | 06/06/2000 |
| 6066863 | Lateral semiconductor arrangement for power IGS A lateral semiconductor device, such as an LIGBT, LMOSFET, lateral bipolar transistor, lateral thyristor, or lateral MOS control thyristor, includes a device area surrounded by an n-type region in an n-channel lateral semiconductor device or by a p-type r... | 05/23/2000 |
| 6049095 | Semiconductor device A semiconductor device includes a p channel MOS transistor with a p- diffusion region, a p+ diffusion region and a gate electrode formed on the main surface of an n- layer on a buried oxide film. The p- diffu... | 04/11/2000 |
| 6037634 | Semiconductor device with first and second elements formed on first and second portions An SOI semiconductor substrate of a semiconductor device includes an SOI layer, an embedded oxide film, a semiconductor substrate, an insulating layer, and a protective coat. The protective coat protects the insulating layer from an oxide film etchant in ... | 03/14/2000 |
| 6025622 | Conductivity modulated MOSFET A conductivity modulated MOSFET, having a semiconductor substrate of a first conductivity type, a semiconductor layer of a second conductivity type formed on the semiconductor substrate and having a high resistance, a base layer of the first conductivity ... | 02/15/2000 |
| 6020222 | Silicon oxide insulator (SOI) semiconductor having selectively linked body A silicon oxide insulator (SOI) device includes an SOI layer supported on a silicon substrate. A body region is disposed on the SOI layer, and the body region is characterized by a first conductivity type. Source and drain regions are juxtaposed with the ... | 02/01/2000 |
| 5998227 | IGBT and free-wheeling diode combination A combination of an IGBT and an antiparallel-connected freewheeling diode in which the IGBT die size is greater than about twice the diode die size. Preferably the diode die size is about 10%-25% of that of the IGBT. The respective die sizes of an IGBT an... | 12/07/1999 |
| 5994738 | Silicon oxide insulator (SOI) semiconductor having selectively linked body A silicon oxide insulator (SOI) device includes an SOI layer supported on a silicon substrate. A body region is disposed on the SOI layer, and the body region is characterized by a first conductivity type. Source and drain regions are juxtaposed with the ... | 11/30/1999 |
| 5977569 | Bidirectional lateral insulated gate bipolar transistor having increased voltage blocking capability A bidirectional lateral insulated gate bipolar transistor (IGBT) includes two gate electrodes. The IGBT can conduct current in two directions. The IGBT relies on a double RESURF structure to provide high voltage blocking in both directions. The IGBT is sy... | 11/02/1999 |
| 5976926 | Static memory cell and method of manufacturing a static memory cell A static memory cell having no more than three transistors. A static memory cell comprises a semiconductor substrate of a first conductivity type; a buried layer in the substrate, the buried layer having a second conductivity type opposite to the first co... | 11/02/1999 |
| 5959345 | Edge termination for zener-clamped power device A semiconductor power device (100) that includes a number of bipolar or FET power devices (116), an over-voltage clamp (118), and an edge termination structure (110) that separates the power devices (116) and the over-voltage clamp (118). The power device... | 09/28/1999 |
| 5945723 | Composite controlled semiconductor device In a composite controlled semiconductor device having an insulated gate and a power conversion device using the same, a p type semiconductor region forming no channel is provided in the composite device structure between a plurality of p type semiconducto... | 08/31/1999 |
| 5929485 | High voltage insulated gate type bipolar transistor for self-isolated smart power IC On a surface of one device region defined at a surface of a P-type silicon substrate, a gate electrode is formed on a thermal oxidation layer. An N-type source diffusion layer is formed at the surface of the device region, and a P-type substrate contact l... | 07/27/1999 |
