Did You Know...
...that the Band-Aid Bandage was invented by a Johnson & Johnson employee whose wife had cut herself? Earl Dickson's wife was rather accident prone, so he set out to develop a bandage that she could apply without help. He placed a small piece of gauze in the center of a small piece of surgical tape, and what we know today as the Band Aid bandage was born!
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| Number | Title | Issue Date |
| 7439591 | Gate layer diode method and apparatus Method, apparatus, and article of manufacture for a diode defined by a portion of a gate layer of an integrated circuit. Illustrative, non-limiting embodiments of the invention are provided, including a temperature compensated DRAM, a temperature compensated CPU, a ... | 10/21/2008 |
| 7323402 | Trench Schottky barrier diode with differential oxide thickness A fabrication process for a trench Schottky diode with differential oxide thickness within the trenches includes forming a first nitride layer on a substrate surface and subsequently forming a plurality of trenches in the substrate including, possibly, a termination... | 01/29/2008 |
| 6967363 | Lateral diode with multiple spacers Various circuit devices, including diodes, and methods manufacturing therefor are provided. In one aspect, a method manufacturing is provided that includes forming a gate structure on a semiconductor portion of a substrate. The semiconductor portion has a first cond... | 11/22/2005 |
| 6692998 | Integrated high quality diode A high-quality diode is formed in an SOI process, using standard steps and implant doses that are used in the process for other devices such as a FET and a buried resistor; in particular using a buried resistor mask and implant to form one side of the dio... | 02/17/2004 |
| 6674123 | MOS control diode and method for manufacturing the same A MOS control diode is provided for power switching. In the MOS control diode, a switching speed is high and a reverse leakage current characteristic is improved without additionally needing processes for improving reverse recovery time by converting a po... | 01/06/2004 |
| 6661036 | Semiconductor switches with evenly distributed fine control structures Semiconductor structure configured as a semiconductor switch that can be used in various forms to switch currents. Semiconductor switch comprising non-doped or very lightly doped semiconductor crystal for switching currents in at least one direction at hi... | 12/09/2003 |
| 6657240 | Gate-controlled, negative resistance diode device using band-to-band tunneling A new gate-controlled, negative resistance diode device is achieved. The device comprises, first, a semiconductor layer in a substrate. The semiconductor layer contains an emitter region and a barrier region. The barrier region is in contact with the emit... | 12/02/2003 |
| 6653670 | Silicon-on-insulator diodes and ESD protection circuits A silicon-on-insulator (SOI) gated diode and non-gated junction diode are provided. The SOI gated diode has a PN junction at the middle region under the gate, and which has more junction area than a normal diode. The SOI non-gated junction diode has a PN ... | 11/25/2003 |
| 6649944 | Silicon-on-insulator diodes and ESD protection circuits A silicon-on-insulator (SOI) gated diode and non-gated junction diode are provided. The SOI gated diode has a PN junction at the middle region under the gate, thus providing more junction area than a normal diode. The SOI non-gated junction diode has a PN... | 11/18/2003 |
| 6617643 | Low power tunneling metal-oxide-semiconductor (MOS) device A three terminal tunneling device that has a smaller voltage transition between off-current and on-current states and which also has less dependence on the lateral dimensions of the device. The device is a hybrid between a MOS transistor, a gated diode an... | 09/09/2003 |
| 6600182 | High current field-effect transistor A MOSFET that provides high current conduction at high frequency includes a deposited layer over a substrate of a first conductivity type, with source and drain regions adjoining a top surface of the epitaxial layer. The drain region has a first portion t... | 07/29/2003 |
| 6537860 | Method of fabricating power VLSI diode devices A method for manufacturing a discrete power rectifier device having a VLSI multi-cell design employs a two spacer approach to defining a P/N junction profile having good breakdown voltage characteristics. The method provides highly repeatable device chara... | 03/25/2003 |
| 6423986 | Field-controlled high-power semiconductor devices Power semiconductor devices have a plurality of semiconductor layers of alternating p-type and n-type conductivity and top and bottom device surfaces. The top semiconductor layer forms a control layer (60). A semiconductor layer junction, remote from both... | 07/23/2002 |
| 6245607 | Buried channel quasi-unipolar transistor A buried channel lateral quasi-unipolar transistor having low flicker or 1/f noise has a bulk region that forms the base of the buried quasi-unipolar transistor. A drain region is implanted into the bulk region to form a drain/collector. A source region i... | 06/12/2001 |
| 6232163 | Method of forming a semiconductor diode with depleted polysilicon gate structure A high voltage tolerant diode structure for mixed-voltage, and mixed signal and analog/digital applications. The preferred silicon diode includes a polysilicon gate structure on at least one dielectric film layer on a semiconductor (silicon) layer or body... | 05/15/2001 |
| 6107649 | Field-controlled high-power semiconductor devices Power semiconductor devices have a plurality of semiconductor layers of alternating p-type and n-type conductivity and top and bottom device surfaces. A layer of the top surface forms a control layer. A semiconductor layer junction, remote from top and bo... | 08/22/2000 |
| 6015993 | Semiconductor diode with depleted polysilicon gate structure and method A high voltage tolerant diode structure for mixed-voltage, and mixed signal and analog/digital applications. The preferred silicon diode includes a polysilicon gate structure on at least one dielectric film layer on a semiconductor (silicon) layer or body... | 01/18/2000 |
| 6013950 | Semiconductor diode with external field modulation A non-destructive-readout nonvolatile semiconductor diode switching device that may be used as a memory element is disclosed. The diode switching device is formed with a ferroelectric material disposed above a rectifying junction to control the conduction... | 01/11/2000 |
| 5977570 | Semiconductor device and manufacturing method thereof A pin diode is formed by a p+ collector region, an n type buffer region, an n- region and an n+ cathode region. A trench is formed from the surface of n+ cathode region through n+ cathode region t... | 11/02/1999 |
| 5936265 | Semiconductor device including a tunnel effect element A semiconductor device includes a semiconductor substrate having an element region on the main surface thereof, an element isolation region formed to surround the element region on the main surface of the semiconductor substrate, a gate electrode formed o... | 08/10/1999 |
| 5923066 | Field-effect-controllable semiconductor component A field-effect-controllable semiconductor component includes a semiconductor body with first and second surfaces. An inner zone of a first conduction type adjoins the first surface. An anode zone of the opposite, second conduction type adjoins the inner z... | 07/13/1999 |
| 5917204 | Insulated gate bipolar transistor with reduced electric fields AN IGBT including a collector positioned on one surface of a substrate and a doped structure having a buried region therein positioned on the other surface of the substrate. The buried region defining a drift region in the doped structure extending vertic... | 06/29/1999 |
| 5869847 | Thin film transistor A thin film transistor (TFT) comprises a n+ source region and a p+ drain separated by an undoped offset region, or the complementary structure with a p+ source and a n+ drain. By means of this arrangement in the... | 02/09/1999 |
| 5828101 | Three-terminal semiconductor device and related semiconductor devices A semiconductor device has trenches formed on the surface of a semiconductor. The device passes a main current through a channel formed between the trenches and controls the main current with the use of gate electrodes buried in the trenches. The main cur... | 10/27/1998 |
| 5705827 | Tunnel transistor and method of manufacturing same The tunnel transistor of the present invention has either a junction structure wherein a degenerated first semiconductor having one conduction type, a non-degenerated second semiconductor and a degenerated third semiconductor having the reverse conduction... | 01/06/1998 |
| 5691558 | Drift-free avalanche breakdown diode An avalanche breakdown diode includes a p-doped trough in which a highly p-doped region is introduced. In addition to the trough, an n-doped region is introduced, which is underlaid by a p-doped layer. The trough and the p-doped layer define a precisely e... | 11/25/1997 |
| 5686739 | Three terminal tunnel device Disclosed is a three terminal tunnel device exhibiting a tunneling of carriers in a forward direction. The device comprises an intrinsic semiconductor region, an n-type degenerate semiconductor source region abutting one side of the intrinsic semiconducto... | 11/11/1997 |
| 5679966 | Depleted base transistor with high forward voltage blocking capability A depleted base transistor with high forward voltage blocking capability includes cathode and anode regions on opposite faces of a semiconductor substrate, a base region therebetween, a rectifying junction for depleting a portion of the base region of maj... | 10/21/1997 |
| 5666077 | Method and apparatus for detecting an operating voltage level in an integrated circuit A Zener diode is used to simplify a circuit for detecting the level of an operating voltage with respect to a specified range of use. The semiconductor junction of this Zener diode is biased alternately by one voltage or another. Under these conditions, t... | 09/09/1997 |
| 5644150 | Insulated gate thyristor A double gate type insulated gate thyristor is provided which improves the breakdown withstand capability by turning on at low on-voltage by a thyristor operation mode and by turning off at high speed by an IGBT operation mode. In the insulated gate thyri... | 07/01/1997 |
| 5619047 | Semiconductor diode in which electrons are injected into a reverse current A diode (1) is specified which has electron injection means on the anode-side principal surface (3). After the reverse-current peak has been traversed, said means inject electrons into the anode emitter. This compensates for holes and the danger of a dyna... | 04/08/1997 |
| 5616944 | Diode and semiconductor device having a controlled intrinsic or low impurity concentration region between opposite conductivity type semiconductor regions A diode is provided comprising first and second semiconductor regions. The first semiconductor region is of one conductivity type and the second is of the opposite conductivity type. A third region is provided which is either an intrinsic semiconductor re... | 04/01/1997 |
| 5596217 | Semiconductor device including overvoltage protection diode A semiconductor device includes a diode element for protecting a transistor against an overvoltage. A first region of p-type conductivity is formed on an upper surface of an n-type semiconductor substrate in which base and emitter regions of the transisto... | 01/21/1997 |
| 5589696 | Tunnel transistor comprising a semiconductor film between gate and source/drain A tunnel transistor comprises a semiconductor film (27) between a gate isolating film (17) and parts of first (13) and second (15) semiconductor layers which are formed in a substrate (11) to serve as source and drain regions with a spacer region left the... | 12/31/1996 |
| 5581100 | Trench depletion MOSFET A vertical trench power MOS transistor with low on-resistance is obtained by eliminating the inversion region of a conventional structure. In one embodiment, a deep-depletion region is formed between the trench gates to provide forward blocking capability... | 12/03/1996 |
| 5552622 | Tunnel transistor The present invention is to provide a compact and high speed tunnel transistor having a high input impedance, yet consuming only a small quantity of power. In a tunnel transistor according to the present invention, a gate electrode is provided via an insu... | 09/03/1996 |
| 5548133 | IGBT with increased ruggedness An auxiliary MOSFET is integrated into a lateral IGBT structure with the source and drain of the auxiliary MOSFET in parallel with the emitter-base circuit of the IGBT. A driver, integrated with the IGBT chip, turns off the base emitter voltage to the IGB... | 08/20/1996 |
| 5475245 | Field-effect voltage regulator diode A voltage regulator diode according to the present invention comprises: a semiconductor substrate (W); a highly doped source region (3) formed in the substrate (W) to adjoin one surface thereof; a highly doped drain region (D) formed in tile substrate (W)... | 12/12/1995 |
| 5461242 | Insulated gate static induction thyristor with a split gate type shorted cathode structure In a gate insulated static induction thyristor with a split gate type shorted cathode structure, a first gate region of the split gate structure is used as a cathode short-circuit gate and the cathode region is formed between the first and second gate reg... | 10/24/1995 |
| 5430323 | Injection control-type Schottky barrier rectifier An injection control-type Schottky barrier rectifier, including: a semiconductor region having a first conductivity type; a first diffusion region, which is formed in the semiconductor region and which has a second conductivity type, the second conductivi... | 07/04/1995 |
