Did You Know...
...that one person who claimed to be the inventor of the television is Russian emigre Vladimir Zworykin? In 1929 David Sarnoff, founder of RCA, asked Zworykin what it would take to develop TV for commercial use. He said: a year and a half and $100,000. In reality, it took 20 years and $50 million! Before his death in 1982 at the age of 92, Zworykin said of his invention: "The technique is wonderful. It is beyond my expectations. But the programs! I would never let my children even come close to this thing."
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| Number | Title | Issue Date |
| 7439563 | High-breakdown-voltage semiconductor device A high-breakdown-voltage semiconductor device comprises a high-resistance semiconductor layer, trenches formed on the surface thereof in a longitudinal plane shape and in parallel, first regions formed on the semiconductor layer to be sandwiched between adjacent one... | 10/21/2008 |
| 6638807 | Technique for gated lateral bipolar transistors An improved structure and method for gated lateral bipolar transistors are provided. Embodiments of the present invention capitalize on opposing sidewalls and adjacent conductive sidewall members to conserve available surface space on the semiconductor ch... | 10/28/2003 |
| 6603186 | Bipolar transistor with base drive circuit protection An n+ type emitter region and a p-type base region are formed in contact with one main surface of an n-type collector region, a p-type cathode region is formed in a ring shape in contact with the main surface so as to enclose the emitter region and the ba... | 08/05/2003 |
| 6358786 | Method for manufacturing lateral bipolar mode field effect transistor A lateral bipolar field effect transistor having a drift region of a first conductivity formed on a silicon-on insulation substrate with a buried insulation layer, a gate region of a second conductivity formed over and from the buried insulation layer sep... | 03/19/2002 |
| 6313488 | Bipolar transistor having a low doped drift layer of crystalline SiC A bipolar transistor having at least a low doped drift layer (14) of crystalline SiC comprises at least one first layer (13) of a semi-conductor material having a wider energy gap between the conduction band and the valence band than an adjacent layer (14... | 11/06/2001 |
| 6084254 | Lateral bipolar mode field effect transistor A lateral bipolar field effect transistor having a drift region of a first conductivity formed on a silicon-on insulation substrate with a buried insulation layer, a gate region of a second conductivity formed over and from the buried insulation layer sep... | 07/04/2000 |
| 6037632 | Semiconductor device A semiconductor device is disclosed, which comprises a first main electrode, a second main electrode, a high-resistance semiconductor layer of first conductivity type interposed between the first main electrode and the second main electrode, and at least ... | 03/14/2000 |
| 5739044 | Method of manufacturing semiconductor device After selectively forming P+ -type gate regions 14 in the upper surface of a first N- -type semiconductor substrate 10, gate electrodes 30 are selectively formed on the P+ -type gate regions. A P+ -type layer 12... | 04/14/1998 |
| 5705824 | Field controlled current modulators based on tunable barrier strengths A carrier transport media is doped with impurities or includes barrier structures within or on the carrier transport media and a sinusoidally alternating external electric field(s) with frequencies equal to the Bloch frequency divided by an integer is app... | 01/06/1998 |
| 5627401 | Bipolar transistor operating method with base charge controlled by back gate bias A back gate bias voltage is applied to the underside of a lateral bipolar transistor to desensitize a portion of the collector-base depletion region to changes in the collector-base voltage. Emitter-collector current flows through an active base region by... | 05/06/1997 |
| 5623151 | MOS-gated power semiconductor devices with conductivity modulation by positive feedback mechanism A MOS-gated power semiconductor device which combines bipolar conduction with MOS-gate control to achieve low on-state voltage drop while having fast-switching characteristics. A floating P injector region located at the upper surface of the device inject... | 04/22/1997 |
| 5591991 | Semiconductor device and method of manufacturing the same After selectively forming P+ -type gate regions 14 in the upper surface of a first N- -type semiconductor substrate 10, gate electrodes 30 are selectively formed on the P+ -type gate regions. A P+ -type layer 12... | 01/07/1997 |
| 5485017 | Semiconductor device and method of manufacturing same A semiconductor device has an n+ source region, a first n- channel region, a barrier layer, a second n- channel region, a pair of n+ drain regions, an insulating film, and a pair of metal electrodes over the ... | 01/16/1996 |
| 5465001 | Electronic component capable of negative dynamic resistance The semiconductor electronic component comprises, within a semiconductor substrate (3), a first active region (2,4) having a first type of conductivity (n, n++), and a second active region (10), having a second type of conductivity (p, p++... | 11/07/1995 |
| 5410160 | Interband tunneling field effect transistor A field effect semiconductor device having multiple vertically stacked channels (12, 14, 16) separated by barrier layers comprising wide bandgap material (18) is provided. The channels (12, 14, 16) are formed on a wide bandgap buffer layer (11) and each c... | 04/25/1995 |
| 5345103 | Gate controlled avalanche bipolar transistor An insulated gate controlled avalanche bipolar transistor has a heavily doped (with doping of at least 1×1018 cm-3) substrate and a lightly doped channel layer of the same conductivity type on the substrate. The source/emitter and d... | 09/06/1994 |
| 5159421 | Double channel heterostructures A semiconductive device includes a dual channel heterostructure in which a pair of quantum wells separated by a thin barrier layer have their band gaps shifted by applied gate voltages between overlap and non-overlap relationships. When the gaps are in an... | 10/27/1992 |
| 5140299 | Article comprising a high value resistor In an electronic circuit that normally includes a high-value resistor, the resistive function may be usefully provided by a thin dielectric layer. Electric current is transported through the layer by quantum tunneling. In one embodiment, a resistor useful... | 08/18/1992 |
| 5111256 | High speed semiconductor device and an optelectronic device A semiconductor device comprising a first semiconductor layer, a second semiconductor layer on the first layer, a source electrode and a drain electrode both in contact with the first layer, and a hole or electron injection electrode and a gate electrode ... | 05/05/1992 |
| 4965872 | MOS-enhanced, self-aligned lateral bipolar transistor made of a semiconductor on an insulator A self-aligned, lateral bipolar transistor is disclosed having at least one insulated metal gate for control of the base. The device has a Semiconductor-On-Insulator structure that reduces parasitic capacitances. Proper gate control provides a high and co... | 10/23/1990 |
| 4945266 | Composite semiconductor device A static induction thyristor and a power MOSFET are connected is series to construct a composite semiconductor device. The composite semiconductor device is turned ON/OFF in response to signals applied to gates of the static induction thyristor and power ... | 07/31/1990 |
| 4941030 | Semiconductor device A semiconductor device in which, in a planar type bipolar transistor having a collector layer (22) in a substrate side, a base layer (23) formed on the collector layer (22) and an emitter island (24) formed in the base layer (23), a groove (25) is provide... | 07/10/1990 |
| 4922315 | Control gate lateral silicon-on-insulator bipolar transistor The present invention relates to silicon-on-insulator (SOI) gated lateral bipolar transistors that are CMOS compatible. A method is described wherein a heavily doped region is implanted into the base after gate formation to provide a low resistance path t... | 05/01/1990 |
| 4916505 | Composite unipolar-bipolar semiconductor devices A composite unipolar-bipolar semiconductor device in which a sourceless field-effect transistor structure is fabricated upon the outer face of one member of a junction diode structure. In some embodiments the gate portion of the sourceless field-effect tr... | 04/10/1990 |
| 4882295 | Method of making a double injection field effect transistor Double injection field effect transistors, which may be horizontally or vertically arranged, each include a body of semiconductor material extending between two current-carrying electrodes and forming a current path therebetween. The semiconductor body of... | 11/21/1989 |
| 4839703 | High speed and power transistor A high speed and high power transistor includes a first layer of a first semiconductor material, a second layer of a second semiconductor material formed on the first layer, the second semiconductor material having a smaller electron affinity than the fir... | 06/13/1989 |
| 4811064 | Static induction transistor and integrated circuit device using same A static induction transistor (SIT) which is made to operate with a forward gate bias by maintaining the width of the channel region at an appropriate value. Such an improved SIT is used as the inverter transistor in a merged transistor logic (MTL) semico... | 03/07/1989 |
| 4800415 | Bipolar inversion channel device A new solid state field effect bipolar device provides for high current gain and low input capacitance, while avoiding the "punch-through" effects that limit the downward scaling of conventional bipolar and field effect devices. The device typically compr... | 01/24/1989 |
| 4772932 | Bipolar transistor and including gas layers between the emitter and base and the base and collector A semiconductor device according to the invention comprises: a first semiconductor layer having a low impurity concentration formed on a semiconductor substrate; a second semiconductor layer of a first conductivity type formed on the first semiconductor l... | 09/20/1988 |
| 4700213 | Multi-drain enhancement JFET logic (SITL) with complementary MOSFET load A semiconductor integrated logic circuit comprises a load transistor having a carrier injecting region and a carrier extracting region and an inverter transistor having a source region, drain regions, channel regions each connected between the source regi... | 10/13/1987 |
| 4633279 | Semiconductor devices A semiconductor switching device, which makes use of a hot electron emitter to give high speed operation, comprising a body (3) of intrinsic semiconductor material carried on a substrate (1) of n-type conductivity and a hot electron emitter (11, 13) which... | 12/30/1986 |
| 4609929 | Conductivity-enhanced combined lateral MOS/bipolar transistor A combined lateral MOS/bipolar transistor includes an intermediate semiconductor layer of the same conductivity type as the channel region which extends laterally from the channel region to beneath the drain contact region of the device. Additionally, a f... | 09/02/1986 |
| 4608582 | Semiconductor device having non-saturating I-V characteristics and integrated circuit structure including same The new kind of field effect transistor having a non-saturating characteristic, i.e. static induction transistor (SIT), proposed by the present inventor is modified to serve as a substitute of any conventional bipolar transistor in a given circuitry. That... | 08/26/1986 |
| 4584593 | Insulated-gate field-effect transistor (IGFET) with charge carrier injection An IGFET assembly, includes a semiconductor substrate of a given first conductivity type having first and second surfaces, and an IGFET having at least one channel zone of a second conductivity type opposite the given first conductivity type embedded in t... | 04/22/1986 |
| 4506281 | GaAs semiconductor device This invention relates to a GaAs semiconductor device and more particularly to a GaAs static induction transistor integrated circuit which operates at a very high speed. Gallium arsenide has the features that the mobility of electrons is higher than that ... | 03/19/1985 |
| 4484207 | Static induction transistor and semiconductor integrated circuit using hetero-junction A hetero-junction static induction transistor (SIT) of normal or upside-down type to be operated by applying a forward bias across the gate and source regions, in which at least its source region and gate region among the source, drain and gate regions is... | 11/20/1984 |
| 4470059 | Gallium arsenide static induction transistor A gallium arsenide static induction transistor of normally-off type simple in manufacture and exhibiting a superior function and suitable for use in low and medium power operation in integrated circuit is obtained by arranging so that its channel region h... | 09/04/1984 |
| 4449284 | Method of manufacturing an integrated circuit device having vertical field effect transistors A method of manufacturing an integrated circuit device including vertical static induction transistors (SIT) having a first recess between the gate region and the drain (or source) region to reduce the capacitance between both regions and a second recess ... | 05/22/1984 |
| 4414557 | Bipolar transistors A base region and a collector region of a bipolar transistor are interconnected through a hetero junction and forbidden band gap of the collector region is larger than that of the base region. When the transistor is made of a silicon base material, the co... | 11/08/1983 |
| 4404575 | Semiconductor device A semiconductor device which, due to a feedback current flowing through a resistance present between the gate region and a primary current path channel region, exhibits a very steeply rising drain current versus voltage characteristic and has a very small... | 09/13/1983 |
