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| Number | Title | Issue Date |
| 7425721 | Field-effect transistor A field-effect transistor is provided which includes: a first nitride semiconductor layer having a lattice constant a1 and a bandgap Eg1; a second nitride semiconductor layer stacked on the first nitride semiconductor layer and having a lattice... | 09/16/2008 |
| 7345327 | Bipolar transistor A semiconductor material which has a high carbon dopant concentration includes gallium, indium, arsenic and nitrogen. The disclosed semiconductor materials have a low sheet resistivity because of the high carbon dopant concentrations obtained. The material can be th... | 03/18/2008 |
| 7317215 | SiGe heterojunction bipolar transistor (HBT) A heterojunction bipolar transistor is formed in a semiconductor substrate of a first conductivity type including a collector region. A base region is formed on the substrate and an emitter region is formed over the base region. At least one of the collector, base a... | 01/08/2008 |
| 7297992 | Method and structure for integration of phosphorous emitter in an NPN device in a BiCMOS process According to one exemplary embodiment, a heterojunction bipolar transistor includes a base situated on a substrate. The heterojunction bipolar transistor can be an NPN silicon-germanium heterojunction bipolar transistor, for example. The heterojunction bipolar trans... | 11/20/2007 |
| 7297993 | Bipolar transistor and fabrication method of the same A bipolar transistor having a base electrode of an air bridge structure is simplified in structure and enhanced in the degree of freedom of a contact position of a base wiring line with the base electrode. The bipolar transistor has a semiconductor mesa portion havi... | 11/20/2007 |
| 7268376 | Bipolar transistor for increasing signal transfer efficiency and method of manufacturing the same A bipolar transistor having a base semiconductor layer structure to minimize base parasitic resistance and a method of manufacturing the bipolar transistor are provided. In the provided bipolar transistor, a collector region of a second conductivity type, which is d... | 09/11/2007 |
| 7235822 | Transistor with silicon and carbon layer in the channel region A transistor and method of manufacturing thereof having stressed material layers formed in the channel to increase the speed and improve performance of the transistor. A layer of silicon and carbon is epitaxially grown in the channel region. A thin semiconductor mat... | 06/26/2007 |
| 7224005 | Heterojunction bipolar transistor structure A material made by arranging layers of gallium-arsenide-antimonide (GaAsxSb1-x, 0.0≦x≦1.0) and/or indium-gallium-arsenic-nitride (InyGa1-yAszN1-z, 0.0≦y, z≦1.0) in a specific order is used to ... | 05/29/2007 |
| 7202136 | Silicon germanium heterojunction bipolar transistor with carbon incorporation A silicon germanium heterojunction bipolar transistor device and method comprises a semiconductor region, and a diffusion region in the semiconductor region, wherein the diffusion region is boron-doped, wherein the semiconductor region comprises a carbon dopant ther... | 04/10/2007 |
| 7190047 | Transistors and methods for making the same Apparatus comprising: a first compound semiconductor composition layer doped to have a first charge carrier polarity; a second compound semiconductor composition layer doped to have a second charge carrier polarity and located on the first layer; a third compound se... | 03/13/2007 |
| 7144787 | Methods to improve the SiGe heterojunction bipolar device performance Methods of boosting the performance of bipolar transistor, especially SiGe heterojunction bipolar transistors, is provided together with the structure that is formed by the inventive methods. The methods include providing a species-rich dopant region comprising C, a... | 12/05/2006 |
| 7132701 | Contact method for thin silicon carbide epitaxial layer and semiconductor devices formed by those methods Provided is a process for forming a contact for a compound semiconductor device without electrically shorting the device. In one embodiment, a highly doped compound semiconductor material is electrically connected to a compound semiconductor material of the same con... | 11/07/2006 |
| 7129530 | Semiconductor device A high capacity semiconductor device having a narrowed emitter layer. The semiconductor device includes a collector layer formed on a semiconductor substrate. An SiGe alloy layer is formed on the collector layer. A silicon film is formed on the SiGe layer. An emitte... | 10/31/2006 |
| 7115918 | Collector layer structure for a double hetero-junction bipolar transistor for power amplification applications An indium phosphide based double hetero-junction bipolar transistor with an increased collector-base breakdown voltage and a reduced operational knee voltage is provided by manipulating the conductivity in the collector region. The collector is formed using layers o... | 10/03/2006 |
| 6563146 | Lateral heterojunction bipolar transistor and method of fabricating the same A lateral heterojunction bipolar transistor comprises a first semiconductor layer in a mesa configuration disposed on an insulating layer, a second semiconductor layer formed by epitaxial growth on the side surfaces of the first semiconductor layer and ha... | 05/13/2003 |
| 6436784 | Method of forming semiconductor structure Semiconductor structures and a method of forming semiconductor structures The avalanche breakdown characteristics, such as breakdown voltage and impact ionisation coefficient, of a semiconductor structure can be controlled by controlling the Brilluin-zone... | 08/20/2002 |
| 6376898 | Bipolar transistor layout with minimized area and improved heat dissipation An inventive semiconductor integrated circuit device includes multiple transistor banks over a substrate. The banks are arranged to be substantially parallel to each other in a planar layout of the device. Each said bank includes a plurality of unit trans... | 04/23/2002 |
| 6326650 | Method of forming a semiconductor structure Semiconductor structures and a method of forming semiconductor structures The avalanche breakdown characteristics, such as breakdown voltage and impact ionisation coefficient, of a semiconductor structure can be controlled by controlling the Brillouin-zon... | 12/04/2001 |
| 6246104 | Semiconductor device and method for manufacturing the same An Si semiconductor device has an emitter region, a base region and a collector region formed on a substrate substantially in parallel to a plane of the substrate. And at least one of the emitter region the base region and the collector region includes an... | 06/12/2001 |
| 5734183 | Heterojunction bipolar transistor structure A semiconductor device is provided with an emitter area and a collector area of a first conductive type and a base area of a second conductive type, arranged in a horizontal structure. The semiconductor device comprises an area constituting at least a par... | 03/31/1998 |
| 5621222 | Superlattice semiconductor device A superlattice semiconductor device comprises superlattice layers (4a, 4a', 5a) stacked on the whole surface of a trench (20) formed in a semiconductor substrate or on the whole surface of a projection (30) extending from a surface of the semiconductor su... | 04/15/1997 |
| 5422502 | Lateral bipolar transistor A lateral bipolar transistor is provided in which the active base region comprises a layer of a material providing a predetermined valence band offset relative to the emitter and collector regions, to enhance transport of carriers from the emitter to the ... | 06/06/1995 |
| 5412231 | Semiconductor device having organically doped structure Mobility includes a semiconductor substrate, a non-doped layer applied on the semiconductor substrate, an electron supply layer applied on the non-doped layer, and a metal gate layer applied on the electron supply layer. The said electron supply layer has... | 05/02/1995 |
| 5387808 | Heterojunction bipolar transistors with sloped regions The present invention is directed toward a heterojunction bipolar transistor integrated circuit in which the collector layers of two heterojunction bipolar transistors are provided on a semi-insulating substrate. The collector layers have at least one sur... | 02/07/1995 |
| 5362657 | Lateral complementary heterojunction bipolar transistor and processing procedure A method of fabricating a heterojunction bipolar transistor and the transistor by providing a substrate of a group III-V semiconductor material, doping a first selected region at a surface of the substrate a predetermined first conductivity type, concurre... | 11/08/1994 |
| 5352912 | Graded bandgap single-crystal emitter heterojunction bipolar transistor A heterojunction bipolar transistor having a single-crystal emitter with reduced charge storage and acceptable current gain is described herein. The heterojunction transistor comprises a collector region, a base region formed on the collector region, and ... | 10/04/1994 |
| 5329144 | Heterojunction bipolar transistor with a specific graded base structure The disclosed novel heterojunction bipolar transistor, to be referred to as the enhanced diffusion transistor (EDT), comprises a base of composition selected such that the base bandgap narrows from emitter towards collector in substantially step-wise fash... | 07/12/1994 |
| 5164797 | Lateral heterojunction bipolar transistor (LHBT) and suitability thereof as a hetero transverse junction (HTJ) laser A lateral heterojunction bipolar transistor (LHBT) comprises emitter and/or collector regions forming a p-n heterojunctions at the emitter/base junction and at the collector/base junction with a planar base region wherein at least the emitter region is fo... | 11/17/1992 |
| 5153890 | Semiconductor device comprising a layered structure grown on a structured substrate A semiconductor device such as a laser diode grown on a structured substrate surface having horizontal regions and adjacent inclined sidewall surfaces. The horizontal regions are of standard orientation while the inclined surfaces are misoriented. The lay... | 10/06/1992 |
| 5102812 | Method of making a lateral bipolar heterojunction structure A method of fabricating a lateral bipolar heterojunction transistor and the transistor itself. In a first embodiment a first semiconductor layer of, for instance, InGaAsP is epitaxially grown on an insulating substrate with the subsequent selective area e... | 04/07/1992 |
| 4987468 | Lateral heterojunction bipolar transistor (LHBT) and suitability thereof as a hetero transverse junction (HTJ) laser A lateral heterojunction bipolar transistor (LHBT) comprises emitter and/or collector regions forming a p-n heterojunctions at the emitter/base junction and at the collector/base junction with a planar base region wherein at least the emitter region is fo... | 01/22/1991 |
| 4975750 | Semiconductor device A semiconductor device having a sandwich construction formed by causing a semiconductor region and an opposed region to face each other across a thin film which is made of a substance having a wider forbidden band gap than that of the semiconductor region... | 12/04/1990 |
| 4737831 | Semiconductor device with self-aligned gate structure and manufacturing process thereof A semiconductor device having a new structure of source and drain regions. A semiconductor device of the present invention includes a semiconductor substrate of a first conductivity type, an impurity region of a second conductivity type formed on the semi... | 04/12/1988 |
