Bizarre Patents
Microwave Oven With Removable Storage Cassette in Dashboard of Motor Vehicle
A microwave oven adapted for use within a motor vehicle dashboard area. The microwave oven has a removable storage cassette, and slidable platforms for securing and serving containers of beverages and foods.
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| Number | Title | Issue Date |
| 7166881 | Multi-sensing level MRAM structures The present disclosure provides an improved magnetic memory cell. The magnetic memory cell includes a switching element and two magnetic tunnel junction (MTJ) devices. A conductor connects the first and second MTJ devices in a parallel configuration, and serially co... | 01/23/2007 |
| 6642121 | Control of amount and uniformity of oxidation at the interface of an emitter region of a monocrystalline silicon wafer and a polysilicon layer formed by chemical vapor deposition A method of controlling the quantity and uniformity of distribution of bonded oxygen atoms at the interface between the polysilicon and the monocrystalline silicon includes carrying out, after having loaded the wafer inside the heated chamber of the react... | 11/04/2003 |
| 6563185 | High speed electron tunneling device and applications A detector for detecting electromagnetic radiation incident thereon over a desired range of frequencies exhibits a given responsivity and includes an output and first and second non-insulating layers, which layers are spaced apart such that a given voltag... | 05/13/2003 |
| 6395609 | Method for fabricating a bipolar junction transistor with tunneling current through the gate of a field effect transistor as base current A MOSBJT (Metal Oxide Semiconductor Bipolar Junction Transistor) is formed to have both the higher current drive capability of the BJT and the smaller device area of the scaled down MOSFET. The MOSBJT includes a collector region and an emitter region comp... | 05/28/2002 |
| 6320211 | Semiconductor device and electronic device by use of the semiconductor A semiconductor device is provided with a collector region having a first material of a first conductivity type. A base region is provided having a second material of the opposite conductivity type, and an emitter region is also provided having a third ma... | 11/20/2001 |
| 6246103 | Bipolar junction transistor with tunneling current through the gate of a field effect transistor as base current A MOSBJT (Metal Oxide Semiconductor Bipolar Junction Transistor) is formed to have both the higher current drive capability of the BJT and the smaller device area of the scaled down MOSFET. The MOSBJT includes a collector region and an emitter region comp... | 06/12/2001 |
| 5610435 | Semiconductor device having an electrode which controls a surface state of the base area for minimizing a change of the D.C. amplification ratio A bipolar transistor having a control electrode area of a semiconductor of a first conductive type, and first and second main electrode areas positioned in contact with the control electrode area and composed of a semiconductor of a second conductive type... | 03/11/1997 |
| 5486704 | Semiconductor device and electronic device by use of the semiconductor A semiconductor devive comprises; a collector region of first conductivity type; a base region of second conductivity type; an emitter region of the first conductivity type; a thin film provided on the emitter region and capable of flowing therein a tunnel current;... | 01/23/1996 |
| 5399512 | Method of making carrier conduction conductor-insulator semiconductor (CIS) transistor A Conductor Insulator Semiconductor (CIS) heterojunction transistor. The CIS transistor is on silicon (Si) substrate. A layer of n type Si is deposited on the substrate. A trench is formed through the n type Si layer, and may extend slightly into the subs... | 03/21/1995 |
| 5389803 | High-gain Si/SiGe MIS heterojunction bipolar transistors A Metal Insulator Semiconductor (MIS) heterojunction transistor. The MIS transistor is in a layered wafer having a n+ Si substrate, n Si collector layer, and a p Si/SiGe base. The base Si/SiGe interface may be vertical or horizontal. A thin oxi... | 02/14/1995 |
| 5382815 | Carrier conduction conductor-insulator semiconductor (CIS) transistor A Conductor Insulator Semiconductor (CIS) heterojunction transistor. The CIS transistor is on silicon (Si) substrate. A layer of n type Si is deposited on the substrate. A trench is formed through the n type Si layer, and may extend slightly into the subs... | 01/17/1995 |
| 5272357 | Semiconductor device and electronic device by use of the semiconductor A semiconductor device comprises; a collector region of first conductivity type; a base region of second conductivity type; an emitter region of the first conductivity type; a thin film provided on the emitter region and capable of flowing therein a tunnel current;... | 12/21/1993 |
| 4975750 | Semiconductor device A semiconductor device having a sandwich construction formed by causing a semiconductor region and an opposed region to face each other across a thin film which is made of a substance having a wider forbidden band gap than that of the semiconductor region... | 12/04/1990 |
| 4926232 | Resonant-tunneling bipolar transistor There is disclosed a resonant-tunneling bipolar transistor with a quantum-well comprising an inversion forming layer of an n-type gallium arsenide which is in contact with a first potential barrier layer of an undoped aluminum gallium arsenide partially d... | 05/15/1990 |
| 4849799 | Resonant tunneling transistor A resonant-tunneling, heterostructure bipolar transistor having a quantum well between emitter contact and collector region is described. In one embodiment, a compositionally graded portion of the emitter region is adjacent to the base region, and there i... | 07/18/1989 |
