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| Number | Title | Issue Date |
| 7339236 | Semiconductor device, driver circuit and manufacturing method of semiconductor device The present invention provides a semiconductor technology capable of suppressing an increase in threshold voltage of a transistor and, also, improving a withstand voltage between a source region and a drain region. Source and drain regions of a p channel type MOS tr... | 03/04/2008 |
| 7327012 | Bipolar Transistor Devices A method of forming bipolar transistors by using the same mask to form the collector region in a substrate of an opposite conductivity type as to form the base in the collector region. More specifically, impurities of a first conductivity type are introduced into a ... | 02/05/2008 |
| 7262484 | Structure and method for performance improvement in vertical bipolar transistors A method of forming a semiconductor device having two different strains therein is provided. The method includes forming a strain in a first region with a first straining film, and forming a second strain in a second region with a second straining film. Either of th... | 08/28/2007 |
| 7211464 | Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors and fabricating such devices A bulk-doped semiconductor that is at least one of the following: a single crystal, an elongated and bulk-doped semiconductor that, at any point along its longitudinal axis, has a largest cross-sectional dimension less than 500 nanometers, and a free-standing and bu... | 05/01/2007 |
| 7157786 | Structure of a bipolar junction transistor and fabricating method thereof A method for fabricating a bipolar junction transistor on a wafer is disclosed. The wafer has a N-type doped area and a plurality of isolated structures. A protection layer is formed on the wafer and portions of the protection layer are then removed to expose portio... | 01/02/2007 |
| 6660570 | Method of fabricating a high voltage semiconductor device using SIPOS A high voltage semiconductor device including a semiconductor substrate on which a semi-insulating polycrystalline silicon layer is formed to alleviate electric field concentration in a field region, is disclosed. A thermal oxide layer is formed on the se... | 12/09/2003 |
| 6646321 | Power transistor with internally combined low-pass and band-pass matching stages RF power transistor provided with an internal shunt inductor, characterized in that the shunt is produced in two separated, capacitors (Cb, Cp), each internally bonded to the transistor internal active die (AD) through internal leads (Li, Ld1), one of whi... | 11/11/2003 |
| 6639257 | Hetero-junction bipolar transistor having a dummy electrode A bipolar transistor device with a large current capacity is formed by connecting a plurality of transistor elements to each other in parallel, each transistor element having a collector layer, a base layer, and an emitter layer formed respectively in a s... | 10/28/2003 |
| 6635906 | Voltage sustaining layer with opposite-doped islands for semi-conductor power devices A semiconductor high-voltage device comprising a voltage sustaining layer between a n+ -region and a p+ -region is provided, which is a uniformly doped n(or p)-layer containing a plurality of floating p(or n)-islands. The effect of t... | 10/21/2003 |
| 6614073 | SEMICONDUCTOR CHIP WITH A BASE ELECTRODE AND AN EMITTER ELECTRODE EXPOSED ON ONE OF A PAIR OF OPPOSITE LATERAL FACES AND A COLLECTOR ELECTRODE EXPOSED ON A REMAINING ONE OF THE PAIR OF THE OPPOSITE LATERAL FACES A semiconductor chip provided, at a lateral face thereof, with an electrode for external electric connection. Where a semiconductor chip has a plurality of electrodes, all the electrodes are preferably formed at one or more lateral faces of the semiconduc... | 09/02/2003 |
| 6603186 | Bipolar transistor with base drive circuit protection An n+ type emitter region and a p-type base region are formed in contact with one main surface of an n-type collector region, a p-type cathode region is formed in a ring shape in contact with the main surface so as to enclose the emitter region and the ba... | 08/05/2003 |
| 6573540 | Semiconductor device and method for fabricating the same A bipolar transistor device with a large current capacity is formed by connecting a plurality of transistor elements to each other in parallel, each transistor element having a collector layer, a base layer, and an emitter layer formed respectively in a s... | 06/03/2003 |
| 6566733 | Method and system for providing a power lateral PNP transistor using a buried power buss A power lateral PNP device is disclosed which includes an epitaxial layer; a first and second collector region embedded in the epitaxial layer; an emitter region between the first and second collector regions. Therefore slots are placed in each of the reg... | 05/20/2003 |
| 6559468 | Molecular wire transistor (MWT) Bipolar and field effect molecular wire transistors are provided. The molecular wire transistor comprises a pair of crossed wires, with at least one of the wires comprising a doped semiconductor material. The pair of crossed wires forms a junction where o... | 05/06/2003 |
| 6545341 | Power transistor The present invention relates to a constitution of a bipolar type power transistor, which comprises: a base layer of a first conductivity type; a collector layer of the first conductivity type formed on one surface of the base layer of the first conductiv... | 04/08/2003 |
| 6512268 | Super-junction semiconductor device The super-junction semiconductor device includes an alternating conductivity type layer including n-type drift regions and p-type partition regions laminated alternately with each other outside the active region of the device. A first FP electrode is form... | 01/28/2003 |
| 6423603 | Method of forming a microwave array transistor for low-noise and high-power applications A transistor array including a plurality of transistors. Each transistor includes an emitter. An emitter region contact overlies each emitter region. At least one base region underlies each emitter region and is common to a plurality of transistors in the... | 07/23/2002 |
| 6403991 | Semiconductor device and method for fabricating the same A bipolar transistor device with a large current capacity is formed by connecting a plurality of transistor elements to each other in parallel, each transistor element having a collector layer, a base layer, and an emitter layer formed respectively in a s... | 06/11/2002 |
| 6297700 | RF power transistor having cascaded cells with phase matching between cells The power delivered by an RF power transistor having cascaded cells or unit elements is improved by reducing the phase imbalance between elements and thereby reducing transverse effects between cells. Phase imbalance is reduced by varying the number of tr... | 10/02/2001 |
| 6292390 | Semiconductor device A semiconductor device includes a bipolar transistor whose emitter-collector voltage is set to satisfy a condition IBE | 09/18/2001 |
| 6232822 | Semiconductor device including a bipolar transistor biased to produce a negative base current by the impact ionization mechanism A semiconductor device includes a bipolar transistor whose emitter-collector voltage is set to satisfy a condition IBE | 05/15/2001 |
| 6121633 | Latch-up free power MOS-bipolar transistor A MOS bipolar transistor is provide which includes a silicon carbide npn bipolar transistor formed on a bulk single crystal n-type silicon carbide substrate and having an n-type drift layer a p-type base layer. Preferably the base layer is formed by epita... | 09/19/2000 |
| 6103584 | Uniform current density and high current gain bipolar transistor A bipolar transistor designed to support a substantially uniform current density in base and collector regions to prevent the characteristic early fall-off of bipolar transistor current gain, and to improve the forward safe operating area performance. The... | 08/15/2000 |
| 6034383 | High power density microwave HBT with uniform signal distribution A heterojunction bipolar transistor power cell consisting of a plurality of parallel connected sub-cells arranged in a chevron type of configuration wherein the sub-cells are staggered relative to one another so that the base feed for an input signal can ... | 03/07/2000 |
| 5969378 | Latch-up free power UMOS-bipolar transistor A MOS bipolar transistor is provided which includes a silicon carbide npn bipolar transistor formed on a bulk single crystal n-type silicon carbide substrate and having an n-type drift layer and p-type base layer. A silicon carbide nMOSFET is formed adjac... | 10/19/1999 |
| 5939769 | Bipolar power transistor with high collector breakdown voltage and related manufacturing process There is described a bipolar power transistor with high breakdown voltage, obtained in a heavily doped semiconductor substrate of the N type, over which a lightly doped N type layer, constituting a collector region of the transistor, is superimposed. The ... | 08/17/1999 |
| 5932922 | Uniform current density and high current gain bipolar transistor A bipolar transistor designed to support a substantially uniform current density in base and collector regions to prevent the characteristic early fall-off of bipolar transistor current gain, and to improve the forward safe operating area performance. The... | 08/03/1999 |
| 5804867 | Thermally balanced radio frequency power transistor An RF power transistor having improved thermal balance characteristics includes a first emitter electrode and a base electrode formed on a silicon die, each having a multiplicity of parallel electrode fingers. A second emitter electrode is formed over the... | 09/08/1998 |
| 5753826 | Flow meter having a vibration dampener The invention concerns a Karman's vortex flow meter including dampening members for absorbing vibrations. A stopper is provided to permit limited movement between an amplifier casing and a supporting stand containing a flow detector. The stopper is couple... | 05/19/1998 |
| 5739578 | High power transistor with contact plugs extended from collectors through a substrate to have ends connected together in an indent in the substrate A high power bipolar transistor comprises stacks of emitter, base, and collector regions and an emitter and a base connection on an obverse surface of a semiconductor substrate, and a via-hole member through the substrate between a selected one of the emi... | 04/14/1998 |
| 5719530 | High power bipolar transistor device A high power bipolar transistor includes bipolar transistors disposed on a substrate; a signal line including a pad for inputting a driving signal and a signal transmission line continuous with the pad commonly connecting base electrodes of the bipolar tr... | 02/17/1998 |
| 5569612 | Process for manufacturing a bipolar power transistor having a high breakdown voltage There is described a bipolar power transistor with high breakdown voltage, obtained in a heavily doped semiconductor substrate of the N type, over which a lightly doped N type layer, constituting a collector region of the transistor, is superimposed. The ... | 10/29/1996 |
| 5554880 | Uniform current density and high current gain bipolar transistor The present invention discloses method for fabricating, and the structure of, a unique and novel bipolar transistor. The bipolar transistor of the present invention has a substantially uniform current density in base and collector regions. This uniform cu... | 09/10/1996 |
| 5539242 | Fully current-balanced bipolar power transistor for integrated circuit applications An integrated circuit power transistor, comprising an elongate, resistive, base region and an elongate emitter region formed in part of the base region to provide a base-emitter junction. The power transistor also includes a strip-like base connection for... | 07/23/1996 |
| 5482873 | Method for fabricating a bipolar power transistor A method for fabricating a bipolar power transistor is disclosed, wherein the bipolar power transistor is made on a first type of heavily doped substrate. The method comprises the following steps of: sequentially forming a first type of doped layer, a fir... | 01/09/1996 |
| 5451798 | Semiconductor device and its fabrication method A semiconductor device comprises an insulating region residing adjacent to a first semiconductor region, a control electrode residing via the insulating region, a second semiconductor region and a third semiconductor region, which have an opposite conduct... | 09/19/1995 |
| 5449930 | High power, compound semiconductor device and fabrication process This invention is related to a III-V type of compound semiconductor device, having improved heat dissipation and high power operating characteristics, which is comprised of a semi-insulating III-V compound semiconductor wafer substrate having a frontside ... | 09/12/1995 |
| 5436475 | Bipolar transistor for high power in the microwave range A power transistor has a plurality of small emitter-base complexes arranged in an array. These complexes are electrically insulated from the surrounding semiconductor material by separating regions such that for the current supply to the collectors, a joi... | 07/25/1995 |
| 5399510 | Method of fabricating a semiconductor device In order to simplify the structure of a power amplifying transistor and improve its high-frequency characteristics, a base electrode (7b) and a collector electrode (7c) are formed on the surface of such a power amplifying transistor, while an emitter elec... | 03/21/1995 |
| 5373186 | Bipolar transistor with monoatomic base layer between emitter and collector layers A semiconductor device consisting of epitaxial material is provided with at least one monoatomic layer of doping atoms, i.e. with a layer which is just one atom thick. A preferred device is a bipolar transistor in which case the Dirac-delta doped p-type l... | 12/13/1994 |
