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| Number | Title | Issue Date |
| 7439090 | Method for manufacturing a lower substrate of a liquid crystal display device A method for manufacturing a lower substrate of a liquid crystal display device is disclosed and more particularly, a method for manufacturing a color filter layer on a lower substrate is disclosed. This method is achieved by using a photosensitive insulating layer ... | 10/21/2008 |
| 7425473 | Method of fabricating a thin film transistor for an array panel A method for making a thin film transistor, TFT, (306) on a substrate includes a photolithographic process step of patterning three layers of materials to form a TFT (306) and to form a bridging structure (308) crossing over a TFT gate bus-line ... | 09/16/2008 |
| 7414266 | Semiconductor device and manufacturing method thereof A TFT is manufactured using at least five photomasks in a conventional liquid crystal display device, and therefore the manufacturing cost is high. By performing the formation of the pixel electrode 127, the source region 123 and the drain regio... | 08/19/2008 |
| 7411294 | Display device having misalignment detection pattern for detecting misalignment between conductive layer and insulating layer A display device includes a display panel, and the circuit substrate is separately formed and positioned different from the array substrate of the display panel and connected to the display panel. The circuit substrate includes an insulating substrate, a conductive ... | 08/12/2008 |
| 7396765 | Method of fabricating a liquid crystal display device A method of fabricating a liquid crystal display device according to an embodiment of the present invention includes forming first and second conductive layers on a substrate, wherein the first layer is transparent; patterning the second conductive layer and the fir... | 07/08/2008 |
| 7397086 | Top-gate thin-film transistor A thin-film transistor, such as a top-gate thin-film transistor, is provided herein. The thin-film transistor has a performance-enhancing layer, such as a performance-enhancing bottom layer, comprising a polymer other than a polyimide. In specific embodiments, the p... | 07/08/2008 |
| 7394097 | Liquid crystal display A thin film transistor array substrate including an insulating substrate, a first metallic pattern formed on the insulating substrate, and an insulating film provided on the first metallic pattern. A semiconductor pattern is provided on the insulating film, and a se... | 07/01/2008 |
| 7391054 | Semiconductor device and manufacturing method thereof The active layer of an n-channel TFT is formed with a channel forming region, a first impurity region, a second impurity region and a third impurity region. In this case, the concentration of the impurities in each of the impurity regions is made higher as the regio... | 06/24/2008 |
| 7388228 | Display device and method of manufacturing the same Thin film transistors for a display device each include a semiconductor layer made of polysilicon having a channel region, drain and source regions at both sides of the channel region and doped with impurity of high concentration, and an LDD region arranged either b... | 06/17/2008 |
| 7388265 | Thin film transistor and fabrication method thereof A thin film transistor (TFT) with a self-aligned lightly-doped region and a fabrication method thereof. An active layer has a channel region, a first doped region and a second doped region, in which the first doped region is disposed between the channel region and t... | 06/17/2008 |
| 7381990 | Thin film transistor with multiple gates fabricated using super grain silicon crystallization A thin film transistor with multiple gates is fabricated using a super grain silicon (SGS) crystallization process. The thin film transistor a semiconductor layer formed in a zigzag shape on an insulating substrate, and a gate electrode intersecting with the semicon... | 06/03/2008 |
| 7365817 | Multi-domain liquid crystal display and method for manufacturing the same The present invention relates to a multi-domain, specifically 4-domain, liquid crystal display and a method for manufacturing the same. In one aspect, the liquid crystal display includes a pair of opposed substrates and a liquid crystal injected and sealed between t... | 04/29/2008 |
| 7361535 | Liquid crystal display device having polycrystalline TFT and fabricating method thereof A thin film transistor includes a substrate, a crystallized semiconductor layer formed over the substrate having a channel region, low-density impurity regions and high-density impurity regions, a gate insulating layer formed on the crystallized semiconductor layer,... | 04/22/2008 |
| 7358528 | Liquid crystal display device and fabrication method thereof A method for fabricating a liquid crystal display includes providing a first substrate having a pixel part and a driving circuit part, forming a gate electrode in the pixel part of the first substrate, forming a first insulation film, a first amorphous silicon thin ... | 04/15/2008 |
| 7348598 | Thin film transistor and liquid crystal display device using the same A TFT, in which source and drain electrodes having concentric circular shapes are formed, reduces an OFF current caused by a leakage current and optimizes an ON current and a stray capacitance between gate and source electrodes. The TFT includes a gate electrode for... | 03/25/2008 |
| 7348593 | Thin film transistor and method of fabricating the same An organic thin film transistor (OTFT) having an adhesive layer and a method of fabricating the same. The OTFT includes a gate electrode formed on a substrate, a gate insulating layer formed on the gate electrode and on remaining exposed portions of the substrate, a... | 03/25/2008 |
| 7335917 | Thin film transistor using a metal induced crystallization process and method for fabricating the same and active matrix flat panel display using the thin film transistor Provided is a thin film transistor that may be manufactured using Metal Induced Crystallization (MIC) and method for fabricating the same. Also provided is an active matrix flat panel display using the thin film transistor, which may be created by forming a crystall... | 02/26/2008 |
| 7323713 | Thin film transistor array substrate and method of producing the same A method of producing a thin film transistor array substrate which includes an insulating substrate, a display pixel having a pixel electrode connected to a drain electrode, a gate wiring, and a source wiring perpendicular to the gate wiring, comprising forming a fi... | 01/29/2008 |
| 7317208 | Semiconductor device with contact structure and manufacturing method thereof A plurality of gate lines are formed on a substrate. After depositing a gate insulating layer, a semiconductor layer and a doped amorphous silicon layer are sequentially formed thereon. A lower insulating layer made of silicon nitride and an upper insulating layer m... | 01/08/2008 |
| 7317206 | Conductive elements for thin film transistors used in a flat panel display Provided is a structure for conductive members in a TFT display. The structure is aluminum based and is heat treated. When heat treated, no hillocks are formed because of the presence of a titanium layer. Furthermore, TiAl3 is not formed because of the pr... | 01/08/2008 |
| 7317227 | Method for forming pattern of stacked film A semiconductor film serving as an active region of a thin film transistor and an upper oxide film protecting the semiconductor film are dry etched to form the active region. In this case, a fluorine-based gas is used as the etching gas, and the etching gas is switc... | 01/08/2008 |
| 7315047 | Light-emitting device A light-emitting device is disclosed capable of reducing the variation of an emission spectrum depending on an angle of viewing a light extraction surface. More particularly, a light-emitting device is disclosed capable of preventing impurities from dispersing from ... | 01/01/2008 |
| 7307282 | Thin film transistors and semiconductor device The TFT has a channel-forming region formed of a crystalline semiconductor film obtained by heat-treating and crystallizing an amorphous semiconductor film containing silicon as a main component and germanium in an amount of not smaller than 0.1 atomic % but not lar... | 12/11/2007 |
| 7297982 | Semiconductor device including a TFT having large-grain polycrystalline active layer, LCD employing the same and method of fabricating them A display device includes a pixel region having a plurality of pixels and a peripheral circuit region disposed at a periphery of the pixel region for driving the pixels. The peripheral circuit region includes transistors fabricated from polycrystalline semiconductor... | 11/20/2007 |
| 7294887 | Semiconductor device comprising thin film transistor TFTs arranged in various circuits have structures that are suited for circuit functions, in order to improve operation characteristics and reliability of the semiconductor device, to lower consumption of electric power, to decrease the number of steps, to lower the ... | 11/13/2007 |
| 7282766 | Fin-type semiconductor device with low contact resistance A semiconductor device comprises a fin-type semiconductor region (fin) on a support substrate, having a pair of generally vertical side walls and an upper surface coupling the side walls; an insulated gate electrode structure traversing an intermediate portion of th... | 10/16/2007 |
| 7262433 | Semiconductor device A first thin film transistor including a gate electrode, a source region, a drain region, a GOLD region, and a channel region is formed at a first region at a TFT array substrate. A second thin film transistor including a gate electrode, a source region, drain regio... | 08/28/2007 |
| 7253036 | Method of forming gate insulation film using plasma method of fabricating poly-silicon thin film transistor using the same A method of forming a gate insulation film of a crystallized thin film transistor, is provided, which can enhance an interfacial feature which exists between a gate oxide film and a silicon thin film substrate and which is fatal to performance of the thin film trans... | 08/07/2007 |
| 7250316 | Mask and method of manufacturing liquid crystal display device using the same A method for fabricating a device is disclosed. The method includes providing a substrate; forming a thin film on the substrate; forming a photoresistable layer on the thin film; irradiating light onto the photoresistable layer through a photo mask having a transmis... | 07/31/2007 |
| 7250629 | Semiconductor device and flat panel display device having the same A semiconductor device having two thin film transistors where cross-talk is minimized and a flat panel display device having the same. The semiconductor device includes a first electrode, a second electrode surrounding the first electrode in the same plane, a third ... | 07/31/2007 |
| 7247882 | Display device There is provided a semiconductor device having TFTs whose thresholds can be controlled. There is provided a semiconductor device including a plurality of TFTs having a back gate electrode, a first gate insulation film, a semiconductor active layer a second g... | 07/24/2007 |
| 7247881 | Organic light-emitting display with pad area and fabricating method of same An organic light-emitting display including a substrate, at least one thin film transistor, a pixel electrode and at least one pad electrode. The substrate is provided with a display area and a pad area spaced apart from the display area. The thin film transistor is... | 07/24/2007 |
| 7223996 | Electric device, matrix device, electro-optical display device, and semiconductor memory having thin-film transistors A circuit adapted to dynamically activate an electro-optical display device is constructed from a thin-film gate-insulated semiconductor device. This device comprises PMOS TFTs producing only a small amount of leakage current. Besides the dynamic circuit, a CMOS cir... | 05/29/2007 |
| 7220611 | Liquid crystal display panel and fabricating method thereof A liquid crystal display panel including a thin film transistor array substrate structure including, a substrate, a gate line and a data line disposed on the substrate and insulated from each other by a gate insulating pattern, a thin film transistor provided at int... | 05/22/2007 |
| 7217952 | Method of manufacturing a semiconductor device and semiconductor manufacturing apparatus A technique for manufacturing TFTs having little dispersion in their electrical characteristics is provided. Contamination of a semiconductor film is reduced by performing oxidation processing having an organic matter removing effect, forming a clean oxide film, aft... | 05/15/2007 |
| 7205568 | Solid state image pickup apparatus and radiation image pickup apparatus In a solid state image pickup apparatus with a photodetecting device and one or more thin film transistors connected to the photodetecting device formed in one pixel, a part of the photodetecting device is formed over at least a part of the thin film transistor, and... | 04/17/2007 |
| 7202499 | Semiconductor device including two transistors and capacitive part An object of the present invention is to provide a TFT of new structure in which the gate electrode overlaps with the LDD region and a TFT of such structure in which the gate electrode does not overlap with the LDD region. The TFT is made from crystalline semiconduc... | 04/10/2007 |
| 7202116 | Thin film transistor substrate for display device and fabricating method thereof A thin film transistor substrate for a display device having a plurality of thin film transistors and pixel electrodes connected to the thin film transistors, said thin film transistor substrate includes: a plurality of pad electrodes in a non-display area of the di... | 04/10/2007 |
| 7202500 | Thin film transistor array substrate and method of manufacturing the same A thin film transistor array substrate includes a gate pattern on a substrate. The gate pattern includes a gate electrode, a gate line connected to the gate electrode, and a lower gate pad electrode connected to the gate line. A source/drain pattern includes a sourc... | 04/10/2007 |
| 7196383 | Thin film oxide interface An oxide interface and a method for fabricating an oxide interface are provided. The method comprises forming a silicon layer and an oxide layer overlying the silicon layer. The oxide layer is formed at a temperature of less than 400° C. using an inductively couple... | 03/27/2007 |
