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| Number | Title | Issue Date |
| 7402865 | Semiconductor device including a contact connected to the body and method of manufacturing the same A Schottky junction is formed at the connection between an SOI layer and a contact (namely, under an element isolation insulating film) without forming a P+ region with a high impurity concentration thereat. The surface of a body contact is provide with a... | 07/22/2008 |
| 7402852 | Charge coupled device having a back electrode A charge coupled device (CCD) is disclosed which has a semiconductor body (20) comprising polymer or oligomer semiconductor material in place of the conventional silicon. A back electrode (22) of the device is electrically coupled to the semi-conductor... | 07/22/2008 |
| 7388271 | Schottky diode with minimal vertical current flow A method of forming a rectifying diode. The method comprises providing a first semiconductor region of a first conductivity type and having a first dopant concentration and forming a second semiconductor region in the first semiconductor region. The second semicondu... | 06/17/2008 |
| 7312510 | Device using ambipolar transport in SB-MOSFET and method for operating the same A device using an ambipolar transport of an SB-MOSFET and a method for operating the same are provided. The SB-MOSFET includes: a silicon channel region; a source and a drain contacted on both sides of the channel region and formed of material including metal layer;... | 12/25/2007 |
| 7307310 | Semiconductor device and method for manufacturing same A semiconductor device comprises a drift region of a first conduction type, a base region of a second conduction type, a source region of the first conduction type, a contact hole, a column region of the second conduction type, a plug and wiring. The drift region fo... | 12/11/2007 |
| 7304329 | Field effect transistor A field effect transistor includes a semiconductor substrate having an active region, a source region, and a drain region at an upper portion of the substrate. The active region is located between the source and drain regions. A gate electrode is located on the acti... | 12/04/2007 |
| 7238976 | Schottky barrier rectifier and method of manufacturing the same A Schottky barrier rectifier, in accordance with embodiments of the present invention, includes a first conductive layer and a semiconductor. The semiconductor includes a first doped region, a second doped region and a plurality of third doped regions. The second do... | 07/03/2007 |
| 7033896 | Field effect transistor with a high breakdown voltage and method of manufacturing the same An electric field effect transistor of high breakdown voltage and a method of manufacturing the same are disclosed. A recessed portion is formed at the channel region and is filled by a protective oxide layer. Lightly doped source/drain regions are formed under the ... | 04/25/2006 |
| 6686616 | Silicon carbide metal-semiconductor field effect transistors SiC MESFETs are disclosed which utilize a semi-insulating SiC substrate which substantially free of deep-level dopants. Utilization of the semi-insulating substrate may reduce back-gating effects in the MESFETs. Also provided are SiC MESFETs with a two re... | 02/03/2004 |
| 6667508 | Nonvolatile memory having a split gate A novel structure of nonvolatile memory is formed on p type silicon and includes a stacked gate, a tunneling dielectric layer, a floating gate (FG), a dielectric layer and a control gate (CG). One side of the stacked gate has a source region and the other... | 12/23/2003 |
| 6548875 | Sub-tenth micron misfet with source and drain layers formed over source and drains, sloping away from the gate A semiconductor device having a low channel resistance without degrading transistor characteristics even for the 0.1 μm generation or later, and also: a manufacturing method of the device. The method includes fabricating source/drain electrodes and a gat... | 04/15/2003 |
| 6544674 | Stable electrical contact for silicon carbide devices An electrical contact for a silicon carbide component comprises a material that is in thermodynamic equilibrium with silicon carbide. The electrical contact is typically formed of Ti3 SiC2 that is deposited on the silicon carbide com... | 04/08/2003 |
| 6501145 | Semiconductor component and method for producing the same The invention relates to a semiconductor component with adjacent Schottky (5) and pn (9) junctions positioned in a drift area (2, 10) of a semiconductor material. The invention also relates to a method for producing said semiconductor component.... | 12/31/2002 |
| 6452244 | Film-like composite structure and method of manufacture thereof On a semiconductor layer 1 consisting of a substrate of a semiconductor single crystal or the like, a metallic layer 2 of a thickness of 20 nm or less is formed. The metallic layer 2 comprises a first area A directly contacting with the semiconductor laye... | 09/17/2002 |
| 6441463 | IGBT, control circuit, and protection circuit on same substrate Latch-up of each of parasitic thyristors (T1-T4), which occurs when a circuit element (B1) is formed on a semiconductor substrate in which an IGBT (Z1) has been formed, is prevented by a circuit for preventing the latch-up using Schottky barrier diodes (D... | 08/27/2002 |
| 6413829 | Field effect transistor in SOI technology with schottky-contact extensions For forming a field effect transistor on a buried insulating material in SOI (semiconductor on insulator) technology, a gate dielectric and a gate electrode are formed on the semiconductor material, and spacers are formed on sidewalls of the gate electrod... | 07/02/2002 |
| 6388272 | W/WC/TAC ohmic and rectifying contacts on SiC Ohmic and rectifying contacts to a TaC layer on an n-type or p-type area of an SiC substrate are formed by depositing a WC layer over the TaC layer, followed by a metallic W layer. Such contacts are stable to at least 1150° C. Electrodes connect to the c... | 05/14/2002 |
| 6365494 | Method for producing an ohmic contact A component is produced on a substrate made of SiC. The component has at least one ohmic contact and at least one Schottky contact. The component is brought to a temperature of more than 1300° C. at least during the growth of an epitaxial layer. To ensur... | 04/02/2002 |
| 6222267 | Semiconductor device and manufacturing thereof A semiconductor device has: a silicon substrate; a plurality of impurity doped regions formed in a surface layer of the silicon substrate; contact layers each in contact with a surface of associated one of the plurality of impurity doped regions, the cont... | 04/24/2001 |
| 6184564 | Schottky diode with adjusted barrier height and process for its manufacture A schottky diode is formed of a sintered barrier metal layer which contacts a lightly doped silicon surface. The barrier metal layer is formed of palladium as well as a small quantity of another metal whose choice is determined by the desired value of the... | 02/06/2001 |
| 6150246 | Method of making Os and W/WC/TiC ohmic and rectifying contacts on SiC Metallic osmium on SiC (either ଲ or ) forms a contact that remains firmly attached to the SiC surface and forms an effective barrier against diffusion from the conductive metal. On n-type SiC, Os forms an abrupt Schottky rectifying junction h... | 11/21/2000 |
| 6087702 | Rare-earth schottky diode structure A method for forming a Schottky diode structure is disclosed. The method includes the steps of: a) Providing a substrate; b) forming a rare-earth containing layer over the substrate; and c) forming a metal layer over the rare-earth containing layer. The S... | 07/11/2000 |
| 5929523 | Os rectifying Schottky and ohmic junction and W/WC/TiC ohmic contacts on SiC Metallic osmium on SiC (either ଲ or )forms a contact that remains firmly attached to the SiC surface and forms an effective barrier against diffusion from the conductive metal. On n-type SiC, Os forms an abrupt Schottky rectifying junction ha... | 07/27/1999 |
| 5888891 | Process for manufacturing a schottky diode with enhanced barrier height and high thermal stability A schottky diode is formed of a sintered palladium platinum silicide in contact with a lightly doped silicon surface in which the platinum and palladium are present in a ratio of about one part to about 10 parts respectively, by weight.... | 03/30/1999 |
| 5801444 | Multilevel electronic structures containing copper layer and copper-semiconductor layers A low temperature annealed Cu silicide or germanide layer on the surface of a single crystalline semiconductor substrate of Si or Ge is used in interconnection metallization for integrated circuits. The Cu silicide or germanide layer is preferably formed ... | 09/01/1998 |
| 5789311 | Manufacturing method of SiC Schottky diode A Schottky electrode is formed on an n-type SiC base member with an Al--Ti alloy or by laying Al films and Ti films alternately, and a resulting structure is subjected to a heat treatment of 600° C. to 1,200° C. A p-type SiC layer may be formed around t... | 08/04/1998 |
| 5767536 | II-VI group compound semiconductor device A II-VI group compound semiconductor device comprising a ZnX Mg1-X SY Se1-Y (0ࣘXࣘ1, 0ࣘYࣘ1) semiconductor layer, an intermediate layer comprising a compound of an element constituting the semiconductor la... | 06/16/1998 |
| 5760462 | Metal, passivating layer, semiconductor, field-effect transistor A majority carrier device includes a bulk active region and a thin-film passivating layer on the bulk active region. The thin-film passivating layer includes a Group 13 element and a chalcogenide component. In one embodiment, the majority carrier device i... | 06/02/1998 |
| 5644156 | Porous silicon photo-device capable of photoelectric conversion A semiconductor device includes a porous silicon layer with an impurity concentration of 1×1019 to 1×1021 cm-3, in which a plurality of pores are formed, and a thermal oxide film 0.01 to 10 μm thick formed on the expand... | 07/01/1997 |
| 5635735 | Field effect transistor with an improved Schottky gate structure The invention provides a Schottky barrier structure comprising a Schottky gate electrode, a first layer in contact with said Schottky gate electrode and said first layer being made of a first compound semiconductor and a second layer in contact with said ... | 06/03/1997 |
| 5500393 | Method for fabricating a schottky junction The characteristics of a Schottky junction between diamond and metal causes the diode using the Schottky junction to have a large leakage reverse current and n-value far bigger than 1. A surface of diamond on which a Schottky junction shall be formed is p... | 03/19/1996 |
| 5476812 | Semiconductor heterojunction structure A semiconductor heterojunction structure comprising a p-type diamond layer and an n-type cubic boron nitride layer on a surface of said p-type diamond layer. Such heterojunction structure is useful for a semiconductor device such as a diode, a transistor,... | 12/19/1995 |
| 5471072 | Platinum and platinum silicide contacts on ଲ-silicon carbide Gold, which is the commonly used metallization on ଲ-silicon carbide, is known to degrade at temperatures above 450° C. It also exhibits poor adhesion to silicon carbide. Schottky contacts with platinum metallization have rectifying characteristics ... | 11/28/1995 |
| 5448096 | Semiconductor device with reduced stress applied to gate electrode In a semiconductor device having a gate electrode and an insulating film covering the gate electrode on a compound semiconductor substrate, the stress in the gate metal and the stress produced by the insulating film on the gate electrode cancel so that th... | 09/05/1995 |
| 5438218 | Semiconductor device with Shottky junction A semiconductor device is provided having a first semiconductor region comprising an n-type semiconductor and a second semiconductor region of an n-type semiconductor having a higher resistivity than the first semiconductor region. An insulation film is p... | 08/01/1995 |
| 5391510 | Formation of self-aligned metal gate FETs using a benignant removable gate material during high temperature steps A sub-micron FET is disclosed made by a method using expendable self-aligned gate structure up to and including the step of annealing the source/drain regions. The source/drain regions are formed by ion implantation using the expendable structure (diamond... | 02/21/1995 |
| 5384470 | High temperature rectifying contact including polycrystalline diamond and method for making same A rectifying contact including a refractory metal carbide layer on a polycrystalline diamond layer provides high temperature operation and may be included in semiconductor devices, such as diodes and field effect transistors. The refractory metal carbide ... | 01/24/1995 |
| 5371382 | Amorphous silicon rectifying contact on diamond and method for making same A rectifying contact for use at high temperatures includes a semiconducting diamond layer and a doped amorphous silicon layer thereon. The amorphous silicon layer may be doped with either a p-type or n-type dopant. The semiconducting diamond may be a dope... | 12/06/1994 |
| 5350944 | Insulator films on diamonds Electrical quality insulating films on n-type and p-type diamond substrates are provided in which an insulating film such as a silicon dioxide film is deposited onto the exposed face of a diamond substrate, such as by chemical vapor deposition. Forming a ... | 09/27/1994 |
| 5341015 | Semiconductor device with reduced stress on gate electrode In a semiconductor device having a gate electrode and an insulating film covering the gate electrode on a compound semiconductor substrate, the vector sum of the stress in the gate metal and the stress produced by the insulating film on the gate electrode... | 08/23/1994 |
