Class 257/E29.143 - Ohmic electrodes (EPO)

Subclass of Class 257 - Active solid-state devices (e.g., transistors, solid-state diodes)
Definition: This subclass is indented under subclass E29.139. This
No. of patents: 100
Last issue date: 09/02/2008

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Number	Title	Issue Date
7420227	Cu-metalized compound semiconductor device The present invention is a compound semiconductor device characterized in that it is Cu-metalized to improved the reliability of the device and to greatly reduce the cost of production. ...	09/02/2008
7368822	Copper metalized ohmic contact electrode of compound device The present invention provides an ohmic contact for a copper metallization whose heat diffusion is improved and cost is reduced. Therein, the ohmic contact is formed through a depositing and an annealing of three metal layers of Pd, Ge and Cu; and, the contact resis...	05/06/2008
7358585	Silicon-based Schottky barrier infrared optical detector A silicon-based IR photodetector is formed within a silicon-on-insulator (SOI) structure by placing a metallic strip (preferably, a silicide) over a portion of an optical waveguide formed within a planar silicon surface layer (i.e., “planar SOI layer”) of the SO...	04/15/2008
7321140	Magnetron sputtered metallization of a nickel silicon alloy, especially useful as solder bump barrier A nickel silicon alloy barrier layer formed between a metal bonding pad on an integrated circuit and a tin-based solder ball, for example, a lead-free solder. The nickel silicon alloy contains at least 2 wt % silicon and preferably less than 20 wt %. An adhesion lay...	01/22/2008
7297626	Process for nickel silicide Ohmic contacts to n-SiC A Ni2Si-nSiC Ohmic contact is formed by pulsed laser ablation deposition (PLD) of Ni2Si source target deposited on a n-SiC substrate or SiC substrate wafer with SiC epilayer. The Ni2Si Ohmic contact on n-SiC was rapid thermal anneale...	11/20/2007
7238970	Semiconductor device and method for fabricating the same A semiconductor device of the present invention comprises a Group III-V nitride semiconductor layer of gallium nitride or the like having n-type conductivity and at least one ohmic electrode formed on the Group III-V nitride semiconductor layer of gallium nitride or...	07/03/2007
7202168	Method of producing semiconductor device A method of producing a semiconductor device according to an aspect of the present invention comprises forming a seed film of Cu on a substrate; polycrystallizing the seed film formed on the substrate; and forming a plated film of Cu on the polycrystallized seed fil...	04/10/2007
7183207	Chemical vapor deposition metallization processes and chemical vapor deposition apparatus used therein CVD metallization processes and CVD apparatus used therein are provided. The processes include forming a barrier metal layer on a semiconductor substrate and cooling the semiconductor substrate having the barrier metal layer without breaking vacuum. An additional me...	02/27/2007
6667495	Semiconductor configuration with ohmic contact-connection and method for contact-connecting a semiconductor configuration A semiconductor configuration with ohmic contact-connection includes a first and a second semiconductor region made of silicon carbide, each having a different conduction type. A first and a second contact region serve for contact-connection. The first co...	12/23/2003
6645831	Thermally stable crystalline defect-free germanium bonded to silicon and silicon dioxide A wafer pair comprising a substantially defect-free germanium wafer and methods of making the same. The wafer pair comprises the substantially defect-free germanium wafer directly bonded to a silicon wafer. The method of making the wafer pair comprises pl...	11/11/2003
6639316	Electrode having substrate and surface electrode components for a semiconductor device An electrode for a semiconductor device superior in die-bonding and wire-bonding characteristics with a submount and its manufacturing method are provided. The electrode is formed by ohmic-contacting the surface of a semiconductor, which comprises a subst...	10/28/2003
6627919	Thermally stable nickel germanosilicide formed on SiGe A thermally stable nickel germanosilicide on SiGe integrated circuit device, and a method of making the same, is disclosed. During fabrication of the device iridium or cobalt is added at the Ni/SiGe interface to decrease the sheet resistance of the device...	09/30/2003
6583510	Semiconductor device with varying thickness gold electrode An electrode for a semiconductor device includes a gold-containing thin film and a gold-containing plated film on the thin film. The plated film covers the entire thin film. No open surface is present between the thin gold film and the gold plating so no ...	06/24/2003
6544674	Stable electrical contact for silicon carbide devices An electrical contact for a silicon carbide component comprises a material that is in thermodynamic equilibrium with silicon carbide. The electrical contact is typically formed of Ti3 SiC2 that is deposited on the silicon carbide com...	04/08/2003
6506637	Method to form thermally stable nickel germanosilicide on SiGe A thermally stable nickel germanosilicide on SiGe integrated circuit device, and a method of making the same, is disclosed. During fabrication of the device iridium or cobalt is added at the Ni/SiGe interface to decrease the sheet resistance of the device...	01/14/2003
6469319	Ohmic contact to a II-VI compound semiconductor device and a method of manufacturing the same An ohmic contact to II-VI compound semiconductor device for lowering the contact resistance and increasing the efficiency and reliability of a photoelectric device. The method of manufacturing the ohmic contact to a II-VI compound semiconductor device com...	10/22/2002
6468890	Semiconductor device with ohmic contact-connection and method for the ohmic contact-connection of a semiconductor device The disclosed semiconductor device comprises an ohmic contact between a semiconductor region made of n-conducting silicon carbide and a largely homogeneous ohmic contact layer (110), which adjoins the semiconductor region and is made of a material having ...	10/22/2002
6452244	Film-like composite structure and method of manufacture thereof On a semiconductor layer 1 consisting of a substrate of a semiconductor single crystal or the like, a metallic layer 2 of a thickness of 20 nm or less is formed. The metallic layer 2 comprises a first area A directly contacting with the semiconductor laye...	09/17/2002
6388272	W/WC/TAC ohmic and rectifying contacts on SiC Ohmic and rectifying contacts to a TaC layer on an n-type or p-type area of an SiC substrate are formed by depositing a WC layer over the TaC layer, followed by a metallic W layer. Such contacts are stable to at least 1150° C. Electrodes connect to the c...	05/14/2002
6365919	Silicon carbide junction field effect transistor A lateral silicon carbide junction field effect transistor has p-conductive and n-conductive silicon carbide layers. The layers are provided in pairs in lateral direction in a silicon carbide body. Trenches for a source, a drain and a gate extend from a p...	04/02/2002
6365494	Method for producing an ohmic contact A component is produced on a substrate made of SiC. The component has at least one ohmic contact and at least one Schottky contact. The component is brought to a temperature of more than 1300° C. at least during the growth of an epitaxial layer. To ensur...	04/02/2002
6326664	Transistor with ultra shallow tip and method of fabrication A novel transistor with a low resistance ultra shallow tip region and its method of fabrication. The novel transistor of the present invention has a source/drain extension or tip comprising an ultra shallow region which extends beneath the gate electrode ...	12/04/2001
6320265	Semiconductor device with high-temperature ohmic contact and method of forming the same A semiconductor device includes a semiconductor layer, prelayer, refractory layer, and conductive layer. The conductive layer includes an ohmic contact layer, and may also include a barrier layer, of a highly stable, low-resistance element or compound, su...	11/20/2001
6265731	Ohmic contacts for p-type wide bandgap II-VI semiconductor materials A semiconductor device comprises an active element and contacts that permit low-resistance external electrical connections. The active element includes an active layer formed from group II-VI elements, an n-doped layer on one side of the active it layer, ...	07/24/2001
6262439	Silicon carbide semiconductor device A semiconductor substrate includes a first conductivity type semiconductor layer and a second conductivity type semiconductor layer thereon. A first conductivity type semiconductor region is formed in a surface portion of the second conductivity type semi...	07/17/2001
6206985	A1 alloy films and melting A1 alloy sputtering targets for depositing A1 alloy films An Al alloy film containing one kind or two or more kinds of alloy components selected from a group of Ti, Zr, Hf, V, Nb, Ta, Cr, Mo and Mn in a total amount of 0.1 to 10 at %, and a melting Al alloy sputtering target for depositing the Al alloy film, whe...	03/27/2001
6184059	Process of making diamond-metal ohmic junction semiconductor device A diamond product comprising a semiconductor layer having an outer surface region of graphite in contact with the metal electrode to form an ohmic junction with the metal electrode, wherein the outer surface region of graphite has a thickness of at least ...	02/06/2001
6150246	Method of making Os and W/WC/TiC ohmic and rectifying contacts on SiC Metallic osmium on SiC (either ଲ or ଱) forms a contact that remains firmly attached to the SiC surface and forms an effective barrier against diffusion from the conductive metal. On n-type SiC, Os forms an abrupt Schottky rectifying junction h...	11/21/2000
6043513	Method of producing an ohmic contact and a semiconductor device provided with such ohmic contact In a method of producing an ohmic contact (5) to a p-type ଱-SiC layer (3b) in a semiconductor device (1), layers of aluminium, titanium and silicon are deposited on said ଱-SiC layer (3b), and said deposited layers (5) are annealed to convert a...	03/28/2000
6033929	Method for making II-VI group compound semiconductor device A II-VI group compound semiconductor device includes a semiconductor substrate, a ZnX Mg1-X SY Se1-Y (0ࣘXࣘ1, 0ࣘYࣘ1) semiconductor layer formed on the semiconductor substrate, and an electrode layer forme...	03/07/2000
5980265	Low resistance, stable ohmic contacts to silicon carbide, and method of making the same Stable, high temperature electrical contacts to silicon carbide formed using a unique silicide formation process that employs a sacrificial silicon layer between the silicon carbide and the contacting metal, which forms a metal silicide interlayer providi...	11/09/1999
5976641	A1 alloy films and melting A1 alloy sputtering targets for depositing A1 alloy films An Al alloy film containing one kind or two or more kinds of alloy components selected from a group of Ti, Zr, Hf, V, Nb, Ta, Cr, Mo and Mn in a total amount of 0.1 to 10 at %, and a melting Al alloy sputtering target for depositing the Al alloy film, whe...	11/02/1999
5929523	Os rectifying Schottky and ohmic junction and W/WC/TiC ohmic contacts on SiC Metallic osmium on SiC (either ଲ or ଱)forms a contact that remains firmly attached to the SiC surface and forms an effective barrier against diffusion from the conductive metal. On n-type SiC, Os forms an abrupt Schottky rectifying junction ha...	07/27/1999
5909632	Use of separate ZnTe interface layers to form OHMIC contacts to p-CdTe films A method of improving electrical contact to a thin film of a p-type tellurium-containing II-VI semiconductor comprising: depositing a first undoped layer of ZnTe on a thin film of p-type tellurium containing II-VI semiconductor with material properties selecte...	06/01/1999
5907168	Low noise Ge-JFETs A Germanium junction field effect transistor (Ge-JFET) is fabricated in a manner to produce low noise and which is particularly suitable for a cryogenic detector. The Ge-JFET in accordance with the present invention comprises a germanium base material on ...	05/25/1999
5903053	Semiconductor device A semiconductor device comprising a conductive layer and an amorphous alloy layer formed on the bottom surface of said conductive layer and acting as a barrier layer. The conductive layer is either an electrode layer or a wiring layer. The amorphous alloy...	05/11/1999
5877077	Method of producing an ohmic contact and a semiconductor device provided with such ohmic contact In a method of producing an ohmic contact to a p-type ଱-SiC layer in a semiconductor device, layers of aluminum, titanium and silicon are deposited on the ଱-SiC layer, and the deposited layers are annealed to convert at least a part of the dep...	03/02/1999
5710450	Transistor with ultra shallow tip and method of fabrication A novel transistor with a low resistance ultra shallow tip region and its method of fabrication. The novel transistor of the present invention has a source/drain extension or tip region comprising an ultra shallow region which extends beneath the gate ele...	01/20/1998
5696396	Semiconductor device including vertical MOSFET structure with suppressed parasitic diode operation A vertical MOSFET, which can control AC current flowing through a device only by the gate voltage, is obtained. On an n+ silicon layer is formed an n- silicon layer. Within the n- silicon layer is formed a p-body region. ...	12/09/1997
5677572	Bilayer electrode on a n-type semiconductor An electrode in contact with a n-type semiconductor for use in an electronic or optoelectronic device is disclosed. The electrode includes a non-conducting layer contacting the semiconductor; a conductive layer contacting the non-conducting layer, and the...	10/14/1997

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Class 257/E29.143 - Ohmic electrodes (EPO)