Class 257/E29.14 - For gate of heterojunction field-effect devices (EPO)

Subclass of Class 257 - Active solid-state devices (e.g., transistors, solid-state diodes)
Definition: This subclass is indented under subclass E29.139. This
No. of patents: 57
Last issue date: 07/22/2008

«First «Previous1 2 Next»Last»

Number	Title	Issue Date
7402844	Metal semiconductor field effect transistors (MESFETS) having channels of varying thicknesses and related methods A unit cell of a metal-semiconductor field-effect transistor (MESFET) is provided. The unit cell includes a MESFET having a source, a drain and a gate. The gate is between the source and the drain and on a channel layer of the MESFET. The channel layer has a first t...	07/22/2008
7388236	High efficiency and/or high power density wide bandgap transistors Field effect transistors having a power density of greater than 40 W/mm when operated at a frequency of at least 4 GHz are provided. The power density of at least 40 W/mm may be provided at a drain voltage of 135 V. Transistors with greater than 60% PAE and a power ...	06/17/2008
7355215	Field effect transistors (FETs) having multi-watt output power at millimeter-wave frequencies High electron mobility transistors (HEMT) are provided having an output power of greater than 3.0 Watts when operated at a frequency of at least 30 GHz. The HEMT has a power added efficiency (PAE) of at least about 20 percent and/or a gain of at least about 7.5 dB. ...	04/08/2008
7329909	Nitride semiconductor device A multi-layered structure in which a p-3C-SiC layer 102 is formed above a p-Si substrate 101 is formed, above which an I-GaN layer (channel layer) 103, an n-AlGaN layer (barrier layer) 104 are formed. A source electrode 201, a drai...	02/12/2008
7304330	Nitride semiconductor device A nitride semiconductor device, which includes a III-V Group nitride semiconductor layer being composed of a III Group element consisting of at least one of a group containing of gallium, aluminum, boron and indium and V Group element consisting of at least nitrogen...	12/04/2007
6307775	Deaprom and transistor with gallium nitride or gallium aluminum nitride gate A floating gate transistor has a reduced barrier energy at an interface between a gallium nitride (GaN) or gallium aluminum nitride (GaAlN) floating gate an adjacent gate insulator, allowing faster charge transfer across the gate insulator at lower voltag...	10/23/2001
6249020	DEAPROM and transistor with gallium nitride or gallium aluminum nitride gate A floating gate transistor has a reduced barrier energy at an interface between a gallium nitride (GaN) or gallium aluminum nitride (GaAlN) floating gate an adjacent gate insulator, allowing faster charge transfer across the gate insulator at lower voltag...	06/19/2001
6031263	DEAPROM and transistor with gallium nitride or gallium aluminum nitride gate A floating gate transistor has a reduced barrier energy at an interface between a gallium nitride (GaN) or gallium aluminum nitride (GaAlN) floating gate an adjacent gate insulator, allowing faster charge transfer across the gate insulator at lower voltag...	02/29/2000
5610410	III-V compound semiconductor device with Schottky electrode of increased barrier height A field effect group III-V compound semiconductor device having a Schottky gate electrode includes: a semiconductor substrate; a plurality of group III-V compound semiconductor crystal layers including an active layer for transferring carriers and formed ...	03/11/1997
5343057	Thin film, field effect transistor with a controlled energy band This transistor incorporates at least one first stack of semi-conductor conduction layers and at least one second stack of semiconductor layers with a single, highly doped thin film within the second stack giving it the character of a mobile electric char...	08/30/1994
5290719	Method of making complementary heterostructure field effect transistors Complementary heterostructure field effect transistors (30) with complementary devices having complementary gates (40, 50) and threshold adjusting dopings are disclosed. Preferred embodiment devices include a p+ gate (50) formed by diffusion of...	03/01/1994
5214298	Complementary heterostructure field effect transistors Complementary heterostructure field effect transistors (30) with complementary devices having complementary gates (40, 50) and threshold adjusting dopings are disclosed. Preferred embodiment devices include a p+ gate (50) formed by diffusion of...	05/25/1993
5206528	Compound semiconductor field effect transistor having a gate insulator formed of insulative superlattice layer A field effect transistor comprises a current channel layer formed on an InP substrate through a buffer layer and formed of InGaAs having a lattice constant in match with that of InP, and a source electrode and a drain electrode formed on the current chan...	04/27/1993
5180681	Method of making high current, high voltage breakdown field effect transistor The gate voltage breakdown of an integrated circuit field effect transistor, expecially a compound semiconductor metal semiconductor field effect transistor (MESFET) and high electron mobility transistor (HEMT) is dramatically increased by forming an elec...	01/19/1993
5161235	Field-effect compound semiconductive transistor with GaAs gate to increase barrier height and reduce turn-on threshold Multi-layer heterostructure transistors, and methods for making them, involve the use of a p+ doped GaAs gate for an n-channel device to increase barrier height and reduce turn-on threshold. A p++-i-p substrate helps to reduce source and drain capacitance...	11/03/1992
5144378	High electron mobility transistor A semiconductor device comprises a substrate, a channel layer provided on the substrate and formed of an undoped first semiconductor material containing indium arsenide, a two-dimensional electron gas formed in the channel layer as a substantially scatter...	09/01/1992
5111255	Buried channel heterojunction field effect transistor A high transconductance field effect transistor is realized by controlling the doping level in a conducting channel buried beneath a heterointerface. In one exemplary embodiment, a channel comprising an undoped, high mobility, narrow band gap quantum well...	05/05/1992
5086321	Unpinned oxide-compound semiconductor structures and method of forming same Unpinned epitaxial metal-oxide-compound semiconductor structures are disclosed and a method of fabricating such structures is described. Epitaxial layers of compound semiconductor are grown by MBE which result in the formation of a smooth surface having a...	02/04/1992
5084743	High current, high voltage breakdown field effect transistor The gate voltage breakdown of an integrated circuit field effect transistor, especially a compound semiconductor metal semiconductor field effect transistor (MESFET) and high electron mobility transistor (HEMT) is dramatically increased by forming an elec...	01/28/1992
5081511	Heterojunction field effect transistor with monolayers in channel region A heterojunction field effect transistor (HFET) having a source, drain, and channel, wherein the channel comprises a quantum well and at least one mono-atomic well or barrier layer is provided. The mono-atomic well or barrier layer has a different bandgap...	01/14/1992
5075746	Thin film field effect transistor and a method of manufacturing the same A thin film field effect transistor comprising a source electrode and a drain electrode joined to a first semiconductor layer respectively through first and second portions of a second doped semiconductor layer, a gate insulating layer, and a gate electro...	12/24/1991
5036374	Insulated gate semiconductor device using compound semiconductor at the channel An insulated gate semiconductor device comprises a channel region of compound semiconductor of one conductivity type, source and drain regions of the other conductivity type spaced apart by the channel region, a gate insulation film provided on the channe...	07/30/1991
5023674	Field effect transistor A field effect transistor includes a semiconductor substrate, first and second semiconductor layers formed on the semiconductor substrate, and third semiconductor layers located between the first and second semiconductor layers. The third semiconductor la...	06/11/1991
4987095	Method of making unpinned oxide-compound semiconductor structures Unpinned epitaxial metal-oxide-compound semiconductor structures are disclosed and a method of fabricating such structures is described. Epitaxial layers of compound semiconductor are grown by MBE which result in the formation of a smooth surface having a...	01/22/1991
4965645	Saturable charge FET A new gallium arsenide gate heterojunction FET is disclosed. The gate is a multi-layer structure including an intermediate carrier depletable layer. Upon applying a gate voltage, the intermediate layer becomes depleted thereby effectively increasing the g...	10/23/1990
4962409	Staggered bandgap gate field effect transistor A field effect transistor having a highly doped gate wherein both the gate and the channel are different semiconductors with an energy band relationship that provides a barrier to both electrons and holes. The energy band relationship is staggered so that...	10/09/1990
4929985	Compound semiconductor device A compound semiconductor device comprises: a III-V group compound semiconductor substrate and a Schottky junction electrode of p-type amorphous silicon carbide (a-SiC) layer provided on the III-V group compound semiconductor substrate and an amorphous sil...	05/29/1990
4903091	Heterojunction transistor having bipolar characteristics A heterojunction transistor has a first semiconductor layer of a semi-insulating or a low impurity concentration, a second semiconductor layer formed on the first semiconductor layer and made of such a semiconductor material that, in cooperation with the ...	02/20/1990
4870469	Tunnel injection type static transistor and its integrated circuit In a static induction transistor of tunnel injection type, a tunnel injection region is formed between its source region and channel region, and its gate region is formed of a semiconductor having a forbidden band larger than that of said channel region a...	09/26/1989
4866491	Heterojunction field effect transistor having gate threshold voltage capability A field effect transistor comprising a semiconductor channel region; an undoped semiconductor material region adjacent the channel region; a second semiconductor material region separated from the channel region; and a region of semiconductor material adj...	09/12/1989
4849797	Thin film transistor In a thin film transistor which has an active layer formed between source and drain electrodes, a gate insulating film formed in contact with the active layer, and a gate electrode formed in contact with the gate insulating film, the photoconductivity of ...	07/18/1989
4837605	Indium-phosphide hetero-MIS-gate field effect transistor For improvement in gate leakage current, there is disclosed a hetero-MIS gate type field effect transistor comprising (a) an indium-phosphide semi-insulating substrate, (b) an indium-phosphide active layer formed on a surface of the semi-insulating substr...	06/06/1989
4814851	High transconductance complementary (Al,Ga)As/gas heterostructure insulated gate field-effect transistor A complementary (Al,Ga)As/GaAs heterostructure insulated gate field-effect transistor (HIGFET) approach is described in which both the n-channel and p-channel transistors utilize a two-dimensional electron (hole) gas in undoped high mobility channels to f...	03/21/1989
4814838	Semiconductor device and method of manufacturing the same A semiconductor device in which two sorts of compound semiconductors having unequal lattice constants are joined, is disclosed. Defects such as dislocations attributed to lattice mismatching are avoided by subjecting one of the compound semiconductors to atomi...	03/21/1989
4757358	MESFET semiconductor device fabrication with same metal contacting source, drain and gate regions An FET transistor is provided having a two element semiconductor channel region between metal contacts and epitaxial therewith a graded three element seminconductor, in which two of the three elements are in common with the semiconductor of the channel, p...	07/12/1988
4745447	Gallium arsenide on gallium indium arsenide Schottky barrier device Useful field effect transistors can be made with gallium indium arsenide as the electron conducting layer (channel layer) by incorporating a layer of gallium arsenide for the Schottky barrier. Relatively thick gallium arsenide layers are used to achieve l...	05/17/1988
4745449	Integrated electronics suitable for optical communications High gain MESFETs, integratable with a photodetector for optical communications, result from a specific gate structure. In particular, a dielectric region, such as an undoped indium aluminum arsenide region overlaid by a thin aluminum oxide region, is emp...	05/17/1988
4737827	Heterojunction-gate field-effect transistor enabling easy control of threshold voltage A heterojunction-gate field-effect transistor comprises an active layer of semiconductor material having source and drain regions, an intermediate layer of another semiconductor material formed on the active layer between the source and drain regions, the...	04/12/1988
4732870	Method of making complementary field effect transistors A semiconductor device, e.g., a complementary circuit comprising an n-channel transistor (Qn) utilizing a two-dimensional electron gas and a p-channel transistor (Qp) utilizing a two-dimensional hole gas, comprises: a semi-insulating...	03/22/1988
4729000	Low power AlGaAs/GaAs complementary FETs incorporating InGaAs n-channel gates A low power complementary (Al,Ga)As/GaAs heterostructure insulated gate field-effect transistor (HIGFET) approach is described in which the n-channel transistor utilizes an Inx Ga1-x As semiconductor gate to reduce threshold voltage ...	03/01/1988

«First «Previous1 2 Next»Last»

PatentStorm

Bizarre Patents

PatentStorm News

Class 257/E29.14 - For gate of heterojunction field-effect devices (EPO)