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| Number | Title | Issue Date |
| 7411252 | Substrate backgate for trigate FET Disclosed is a tri-gate field effect transistor with a back gate and the associated methods of forming the transistor. Specifically, a back gate is incorporated into a lower portion of a fin. A tri-gate structure is formed on the fin and is electrically isolated fro... | 08/12/2008 |
| 7405455 | Semiconductor constructions and transistor gates One aspect of the invention encompasses a method of forming a semiconductor structure. A patterned line is formed to comprise a first layer and a second layer. The first layer comprises silicon and the second layer comprises a metal. The line has at least one sidewa... | 07/29/2008 |
| 7285833 | Selective doping and thermal annealing method for forming a gate electrode pair with different work functions A semiconductor product and a method for fabricating the semiconductor product provide a pair of gate electrodes formed with respect to a pair of doped wells within a semiconductor substrate. One of the gate electrodes is formed of a first gate electrode material ha... | 10/23/2007 |
| 6703678 | Schottky barrier field effect transistor large in withstanding voltage and small in distortion and return-loss A Schottky barrier field effect transistor has a gate electrode formed with a field plate in order to achieve a high withstanding voltage, where the thickness of the dielectric layer between the channel layer and the field plate, the distance between the ... | 03/09/2004 |
| 6664624 | Semiconductor device and manufacturing method thereof A source electrode, a gate electrode, and a drain electrode formed on a front face active region of a semiconductor substrate in a shape of teeth of a comb are covered with an insulating film such as polyimede etc., as well as all of the upper surface and... | 12/16/2003 |
| 6656802 | Process of manufacturing a semiconductor device including a buried channel field effect transistor A process of manufacturing a semiconductor device including a buried channel field effect transistor comprising, for realizing said field effect transistor, steps of forming a stacked arrangement of semiconductor layers on a substrate including an active ... | 12/02/2003 |
| 6639255 | GaN-based HFET having a surface-leakage reducing cap layer A semiconductor device includes: a substrate; a buffer layer including GaN formed on the substrate, wherein: surfaces of the buffer layer are c facets of Ga atoms; a channel layer including GaN or InGaN formed on the buffer layer, wherein: surfaces of the... | 10/28/2003 |
| 6635404 | Structure and process method of gamma gate for HEMT A method of fabricating a resist pattern for a gamma gate of high electron mobility transistors of gallium arsenide (GaAs) elements for high-speed data communication with low noise is disclosed. The method of fabricating the gamma gate according to the pr... | 10/21/2003 |
| 6620716 | Method for making semiconductor device A method for making a semiconductor device includes forming a resist pattern having a multi-layered structure by performing a plurality of development steps, the resist pattern including a first opening corresponding to a fine gate section of a gate elect... | 09/16/2003 |
| 6617660 | Field effect transistor semiconductor and method for manufacturing the same This invention has an objective to provide a field effect transistor semiconductor which has great adhesiveness between a gate metal and an insulating film defining a gate electrode end and to improve production yield thereof. The field effect transistor ... | 09/09/2003 |
| 6586319 | High-speed compound semiconductor device having a minimized parasitic capacitance and resistance A method of fabricating a semiconductor device includes the steps of forming an insulation film on a compound semiconductor layer, forming an opening in the insulation film so as to expose a part of the compound semiconductor layer, forming a gate electro... | 07/01/2003 |
| 6548333 | Aluminum gallium nitride/gallium nitride high electron mobility transistors having a gate contact on a gallium nitride based cap segment High electron mobility transistors (HEMTs) and methods of fabricating HEMTs are provided Devices according to embodiments of the present invention include a gallium nitride (GaN) channel layer and an aluminum gallium nitride (AlGaN) barrier layer on the c... | 04/15/2003 |
| 6534857 | Thermally balanced power transistor A high power transistor structure comprised of a plurality of field effect transistors fabricated in parallel on a common semiconductor chip and wherein the gate electrodes of the field effect devices are in the form of parallel finger elements having a v... | 03/18/2003 |
| 6507051 | Semiconductor integrated circuit device A semiconductor device includes a semiconductor layer structure, and gate, drain and source electrodes provided on the semiconductor layer structure, the gate electrode being located between the drain and source electrodes. A depletion modulating part is ... | 01/14/2003 |
| 6483135 | Field effect transistor A field effect transistor includes a semiconductor substrate with a channel layer being formed on its surface, a source electrode and a drain electrode formed at a distance on said semiconductor substrate, and a gate electrode placed between the source el... | 11/19/2002 |
| 6465850 | Semiconductor device A semiconductor device provided with a field effect transistor having a electrode pads for wire-bonding comprises a first electrode pad for wire-bonding directly connected with the field effect transistor, and a second electrode pad for wire-bonding conne... | 10/15/2002 |
| 6465814 | Semiconductor device A semiconductor device of the present invention comprises Al0.3 Ga0.7 N layer 4 and Al0.1 Ga0.9 N layer 5 having different Al contents as an electron supply layer on GaN layer 6 serving as an active layer. An ar... | 10/15/2002 |
| 6455361 | Semiconductor device and manufacturing method of the same A gate electrode rectangular in section is formed by patterning on a GaAs substrate as a compound substrate having a channel layer. Subsequently, a specific metal, e.g., Ti is deposited. A solid-phase reaction layer to serve as source/drain is formed in a... | 09/24/2002 |
| 6426525 | FET structures having symmetric and/or distributed feedforward capacitor connections A FET structure includes a FET including a gate having a plurality of gate fingers, a plurality of source fingers, and a plurality of drain fingers; and a feedforward capacitor electrically coupled with the FET for evenly or symmetrically distributing cap... | 07/30/2002 |
| 6414340 | Field effect transistor and method for making the same The field effect device consisting of a substrate, a conducting backplane formed in the substrate, a source and a drain disposed above the conductive backplane, a gate insultatively disposed above the substrate between the source and drain, and a backgate... | 07/02/2002 |
| 6392278 | Fet having a reliable gate electrode A comb-shape MESFET has a gate electrode having a plurality of gate fingers coupled to a gate bar at the proximal ends of the gate fingers. The distal end of each gate finger is formed as a large width end on the inactive region of the wafer. The large wi... | 05/21/2002 |
| 6388528 | MMIC folded power amplifier A MMIC power amplifier having a smaller die size and higher power output are realized with the improved amplifier and transistor geometry herein provided. In particular, transistors, such as FETs (field effect transistors) are displaced from a conventiona... | 05/14/2002 |
| 6387783 | Methods of T-gate fabrication using a hybrid resist Methods for forming a T-gate on a substrate are provided that employ a hybrid resist. The hybrid resist specifically is employed to define a base of the T-gate on the substrate with very high resolution. To define a base of the T-gate, a hybrid resist lay... | 05/14/2002 |
| 6372613 | Method of manufacturing a gate electrode with low resistance metal layer remote from a semiconductor In a semiconductor device, a gate electrode is formed by sequentially forming a Schottky metal film, a barrier metal film, and a low-resistance metal film from the lower side. The Schottky metal film or barrier metal film has a gap in a lower gate vertica... | 04/16/2002 |
| 6373082 | Compound semiconductor field effect transistor A compound semiconductor field effect transistor having, between a gate electrode and a drain electrode, a non-gate region which is the channel region not covered by the gate electrode, wherein a plurality of isolation regions are formed in the non-gate r... | 04/16/2002 |
| 6362689 | MMIC folded power amplifier A MMIC (microwave monolithic integrated circuit) power amplifier and method for the same is provided. A smaller die size and higher power output are realized with the improved transistor geometry herein provided. In particular, transistors, such as FETs (... | 03/26/2002 |
| 6359515 | MMIC folded power amplifier A MMIC (microwave monolithic integrated circuit) power amplifier and method for the same is provided. A smaller die size and higher power output are realized with the improved amplifier and transistor geometry herein provided. In particular, transistors, ... | 03/19/2002 |
| 6329230 | High-speed compound semiconductor device having an improved gate structure A semiconductor device includes a gate structure formed on a substrate in which an LDD structure is formed, wherein gate structure includes a Schottky electrode making a Schottky contact with a channel region in the substrate, a low-resistance layer provi... | 12/11/2001 |
| 6313512 | Low source inductance compact FET topology for power amplifiers A field effect transistor (FET) comprising a plurality of drain finger electrodes, source finger electrodes and gate finger electrodes disposed in an active region of a semiconductor substrate; a drain bus disposed outside the active region and electrical... | 11/06/2001 |
| 6303950 | Field effect transistor including stabilizing circuit A field effect transistor (FET) having a stabilization circuit with a stabilization condition not affected by another circuit element, for example, a matching circuit. The stabilization circuit is pre-formed inside of the FET, thereby pre-stabilizing the ... | 10/16/2001 |
| 6297700 | RF power transistor having cascaded cells with phase matching between cells The power delivered by an RF power transistor having cascaded cells or unit elements is improved by reducing the phase imbalance between elements and thereby reducing transverse effects between cells. Phase imbalance is reduced by varying the number of tr... | 10/02/2001 |
| 6294446 | Methods of manufacturing a high electron mobility transistor with a T-shaped gate electrode A high electron mobility transistor includes a channel layer for developing therein an electron gas layer having a substantially uniform electron gas density, and upper and lower high-resistance wide-band gap layers disposed respective over and beneath th... | 09/25/2001 |
| 6285269 | High-frequency semiconductor device having microwave transmission line being formed by a gate electrode source electrode and a dielectric layer in between A drain electrode and a source electrode are provided for an intrinsic device section on a GaAs substrate with a gate electrode placed therebetween. Almost all or substantial parts of the GaAs substrate is covered by an extending source electrode extendin... | 09/04/2001 |
| 6252266 | Field effect transistor with comb electrodes and via holes A semiconductor device with a field-effect transistor for use at a high frequency, higher than the microwave frequency band, has a pair of grounding electrodes, each having a via hole with an elliptical cross-section, the major axis of which is parallel t... | 06/26/2001 |
| 6201283 | Field effect transistor with double sided airbridge A field effect transistor with a double sided airbridge comprises a substrate containing a conductive region and source, drain and gate electrodes disposed on the substrate. The gate electrode has a finger portion with a first end secured to the substrate... | 03/13/2001 |
| 6150245 | Method of manufacturing a field effect transistor On a channel layer, there are disposed a gate electrode and a first contact layer of which a side surface is brought into contact with the gate electrode on the source side and of which a side surface is apart from the gate electrode on the drain side. Pr... | 11/21/2000 |
| 6144048 | Heterojunction field effect transistor and method of fabricating the same A Schottky barrier layer in separate regions between a source electrode and a gate electrode and between a drain electrode and the gate electrode is completely covered with an etching stopper layer. The gate electrode is separated from a cap layer.... | 11/07/2000 |
| 6100555 | Semiconductor device having a photosensitive organic film, and process for producing the same A recess is made in the semiconductor substrate. A gate electrode has a sectional shape of "T" to have a head overhanging portion and is made in the recess. The gate electrode having a head overhanging portion. A capacitance film is formed under the head ... | 08/08/2000 |
| 6100554 | High-frequency semiconductor device An intrinsic device section is provided by laminating a drain area, an intermediate area, and a source area above a GaAs substrate and by forming a channel area at one oblique surface thereof. A drain electrode ohmic connected to the drain area extends to... | 08/08/2000 |
| 6090649 | Heterojunction field effect transistor and method of fabricating the same A Schottky barrier layer in separate regions between a source electrode and a gate electrode and between a drain electrode and the gate electrode is completely covered with an etching stopper layer. The gate electrode is separated from a cap layer.... | 07/18/2000 |
