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| Number | Title | Issue Date |
| 7422964 | Manufacturing method of the active matrix substrate, and an electro-optical apparatus having the active matrix substrate A manufacturing method of a thin film apparatus, includes: a first step for forming a separation layer on a heat resistant substrate; a second step for forming a thin film device on the separation layer; a third step for providing a surface layer on the thin film de... | 09/09/2008 |
| 7408200 | Thin film transistor array panel and manufacturing method thereof A thin film transistor array panel is provided, which includes: a substrate; a first signal line formed on the substrate; a second signal line formed on the substrate and intersecting the first signal line; a thin film transistor including a gate electrode connected... | 08/05/2008 |
| 7391049 | Thin-film transistor, thin-film transistor sheet and their manufacturing method Disclosed are a process of manufacturing a thin-film transisitor sheet and a thin-sheet transistor sheet manufactured by the process, the process comprising providing a gate busline on a substrate, providing, on the surface of the substrate on the gate busline side,... | 06/24/2008 |
| 7391052 | TFT structure for suppressing parasitic MOSFET in active display A TFT is provided completely separated by an insulating film, in which a parasitic MOSFET is not generated at ends of a semiconductor layer, and the variation in characteristics is small. At least one portion of the ends in the gate-width direction of a gate electro... | 06/24/2008 |
| 7388229 | Thin film transistor substrate, manufacturing method of thin film transistor, and display device A thin film transistor substrate includes a first conductive layer formed on a substrate, an anti-diffusion layer deposited on the first conductive layer, a semiconductor layer formed on the anti-diffusion layer, a gate insulating layer deposited on the semiconducto... | 06/17/2008 |
| 7375375 | Semiconductor device and method for forming the same A semiconductor device and a method for forming the same are disclosed. The semiconductor device comprising an insulated gate field effect transistor provided with a region having added thereto an element at least one selected from the group consisting of carbon, ni... | 05/20/2008 |
| 7365394 | Process for fabricating thin film transistors Transistors are formed by depositing at least one layer of semiconductor material on a substrate comprising a polyphenylene polyimide. The substrate permits the use of processing temperatures in excess of 300° C. during the processes used to form the transistors, t... | 04/29/2008 |
| 7361535 | Liquid crystal display device having polycrystalline TFT and fabricating method thereof A thin film transistor includes a substrate, a crystallized semiconductor layer formed over the substrate having a channel region, low-density impurity regions and high-density impurity regions, a gate insulating layer formed on the crystallized semiconductor layer,... | 04/22/2008 |
| 7352002 | Semiconductor device including semiconductor thin films having different crystallinity, substrate of the same, and manufacturing method of the same, and liquid crystal display and manufacturing method of the same A method of manufacturing a thin-film semiconductor device substrate includes a step of forming a non-single crystalline semiconductor thin film on a base layer, and an annealing step of irradiating the non-single crystalline semiconductor thin film with an energy b... | 04/01/2008 |
| 7348632 | NMOS device formed on SOI substrate and method of fabricating the same Provided are an NMOS device, a PMOS device and a SiGe HBT device which are implemented on an SOI substrate and a method of fabricating the same. In manufacturing a Si-based high speed device, a SiGe HBT and a CMOS are mounted on a single SOI substrate. In particular... | 03/25/2008 |
| 7342288 | Thin film transistor, liquid crystal display apparatus, manufacturing method of thin film transistor, and manufacturing method of liquid crystal display apparatus A manufacturing method of a thin film transistor of the present invention includes the steps of (i) forming an electrode formation area in which a source electrode and a drain electrode are formed by applying a droplet of an electrode raw material, (ii) applying the... | 03/11/2008 |
| 7339189 | Substrate for semiconductor device, method of manufacturing substrate for semiconductor device, substrate for electro-optical device, electro-optical device, and electronic apparatus A substrate for a semiconductor device includes a substrate, a thin film transistor that is provided on the substrate, a wiring line that is provided above the thin film transistor, an interlayer insulating film that electrically isolates the wiring line from at lea... | 03/04/2008 |
| 7326602 | Fabricating method of a thin film transistor array A fabricating method of the thin film array is provided. The thin film transistor array includes a substrate, a plurality of scan lines, a plurality of data lines, a plurality of thin film transistors, an etch barrier layer and a plurality of pixel electrodes. The s... | 02/05/2008 |
| 7317207 | Semiconductor device, method of making the same and liquid crystal display device To provide TFT of improved low-temperature polycrystalline layer that has higher electron mobility and assures less fluctuation in manufacture in view of realizing a liquid-crystal display device having a large display area by utilizing a glass substrate. A T... | 01/08/2008 |
| 7307283 | Semiconductor device and method of manufacturing the same A crystalline semiconductor film in which the position and the size of crystal grains are controlled is provided, and a TFT that can operate at high speed is obtained by forming a channel formation region of the TFT from the crystalline semiconductor film. A heat re... | 12/11/2007 |
| 7297982 | Semiconductor device including a TFT having large-grain polycrystalline active layer, LCD employing the same and method of fabricating them A display device includes a pixel region having a plurality of pixels and a peripheral circuit region disposed at a periphery of the pixel region for driving the pixels. The peripheral circuit region includes transistors fabricated from polycrystalline semiconductor... | 11/20/2007 |
| 7282398 | Crystalline semiconductor thin film, method of fabricating the same, semiconductor device and method of fabricating the same There is provided a technique to form a single crystal semiconductor thin film or a substantially single crystal semiconductor thin film. An amorphous semiconductor thin film is irradiated with ultraviolet light or infrared light, to obtain a crystalline semiconduct... | 10/16/2007 |
| 7274036 | Gate shorted to body thin film transistor, manufacturing method thereof, and display including the same A TFT including a gate metallic layer, a body layer doped with a dopant having a first polarity, a source layer and a drain layer doped with a dopant having a second polarity, a semiconductor layer formed between the source layer and the drain layer, and a contact c... | 09/25/2007 |
| 7256458 | Doubly asymmetric double gate transistor structure The present invention provides a double gated transistor and a method for forming the same that results in improved device performance and density. The preferred embodiment of the present invention provides a double gated transistor with asymmetric gate doping, wher... | 08/14/2007 |
| 7253437 | Display device having a thin film transistor A semiconductor device and a method for forming the same are disclosed. The semiconductor device comprising an insulated gate field effect transistor provided with a region having added thereto an element at least one selected from the group consisting of carbon, ni... | 08/07/2007 |
| 7253441 | Method of manufacturing thin film transistor The object of the present invention is to form a low-concentration impurity region with good accuracy in a top gate type TFT. Phosphorus is added to a semiconductor layer by using a pattern made of a conductive film as a mask to form an N-type impurity region in a s... | 08/07/2007 |
| 7235434 | Thin film transistor with multiple gates using metal induced lateral crystallization and method of fabricating the same A thin film transistor with multiple gates using an MILC process which is capable of materializing multiple gates without increasing dimensions and a method thereof. The thin film transistor has a semiconductor layer which is formed on a insulating substrate in a zi... | 06/26/2007 |
| 7235850 | Thin film transistor, method of fabricating the same, and flat panel display using thin film transistor A thin film transistor may include an active layer formed on an insulating substrate and formed with source/drain regions and a channel region; a gate insulating film formed on the active layer; and a gate electrode formed on the gate insulating film. The gate elect... | 06/26/2007 |
| 7227187 | Semiconductor device and manufacturing method thereof To obtain a semiconductor device containing TFTs of different, suitable properties as display pixel TFTs and high-voltage, driver-circuit TFTs, the semiconductor device of the present invention includes: first and second islands-shaped polycrystalline silicon (p-Si)... | 06/05/2007 |
| 7223622 | Active-matrix substrate and method of fabricating same An active-matrix substrate is provided, which suppresses the unevenness of its surface due to the height difference of the TFTs and gate and data lines from the remaining area. After TFTS, gate lines, and data lines are formed on a transparent base, a transparent di... | 05/29/2007 |
| 7176491 | Semiconductor device A silicon nitride film and a silicon oxide film are formed on a glass substrate. On the silicon oxide film is formed a thin film transistor T including a source region, a drain region, a channel region having a predetermined channel length, a first GOLD region havin... | 02/13/2007 |
| 7176488 | Thin film transistor with protective cap over flexible substrate, electronic device using the same, and manufacturing method thereof In a thin film semiconductor device realized on a flexible substrate, an electronic device using the same, and a manufacturing method thereof, the thin film semiconductor device and an electronic device include a flexible substrate, a semiconductor chip, which is fo... | 02/13/2007 |
| 7170092 | Flat panel display and fabrication method thereof A flat panel display and fabrication method thereof. The present invention uses four etching processes to define a second conducting layer, a doped semiconductor layer and a semiconductor layer. The first etching process is a wet etching using a first resist layer t... | 01/30/2007 |
| 7166498 | Thin film transistor array substrate and manufacturing method of the same A thin film transistor array substrate has a gate electrode of the thin film transistor, a gate line connected to the gate electrode, and a gate pad connected to the gate line; a source/drain pattern including a source electrode and a drain electrode of the thin fil... | 01/23/2007 |
| 7151279 | Thin film transistor array panel and manufacturing method thereof A thin film transistor array panel is provided, which includes: a substrate; a first signal line formed on the substrate; a second signal line formed on the substrate and intersecting the first signal line; a thin film transistor including a gate electrode connected... | 12/19/2006 |
| 7148506 | Active matrix display and electrooptical device A liquid crystal device having a source line over a substrate, a gate line over the substrate, and a plurality of pixels or a pixel electrode over the substrate. A plurality of pixels may be arranged in a matrix array at intersections of source lines and gate lines.... | 12/12/2006 |
| 7138656 | Liquid crystal display panel and fabricating method thereof A liquid crystal display panel and a fabricating method thereof for reducing the number of data lines and the capacitance of a parasitic capacitor between pixel electrodes are disclosed. A first switching part has at least two thin film transistors for applying a fi... | 11/21/2006 |
| 7129120 | Method of manufacturing a semiconductor film and method of manufacturing a semiconductor device by transferring crystallization promoting material in the first semiconductor film to the second semiconductor film through a barrier film In a method of manufacturing a semiconductor film, nickel elements are first held as indicated by 103 on the surface of an amorphous silicon film 102. Then a crystalline silicon film 104 is obtained by a heat treatment. At this time, the crystal... | 10/31/2006 |
| 7129556 | Method for fabricating array substrate for X-ray detector An array substrate for use in an X-ray sensing device is fabricated using an etching stopper that enables good control of the etching process and that prevents over-etch of drain electrodes and second capacitor electrodes while forming contact holes and a cutting fu... | 10/31/2006 |
| 7115906 | Thin film transistor array and fabricating method thereof A thin film transistor array including a substrate, a plurality of scan lines, a plurality of data lines, a plurality of thin film transistors, an etch barrier layer and a plurality of pixel electrodes is provided. The scan lines and the data lines are disposed over... | 10/03/2006 |
| 7095046 | Semiconductor device Provided is a method of realizing a semiconductor device having a structure in which a sufficient light shielding property is compatible with a sufficient storage capacitance without reducing an aperture ratio. A lower light shielding film is formed on a substrate, ... | 08/22/2006 |
| 6704069 | TFT-LCD having particular gate insulator structure A thin-film transistor of a liquid crystal display device includes an ohmic electrode such that the ohmic electrode is formed of a first conductor film of a refractory metal element defined by a first lateral edge and a second conductor film containing Al... | 03/09/2004 |
| 6693000 | Semiconductor device and a method for forming patterns The invention provides a semiconductor device and a method for forming patterns in which the manufacturing cost is reduced while the step coverage is improved. The ITO film 50 and the MoCr film 100 are dry-etched after having formed the ITO film 50 and th... | 02/17/2004 |
| 6692997 | Thin film transistors with dual layered source/drain electrodes and manufacturing method thereof, and active matrix display device and manufacturing method thereof The present invention discloses a method of manufacturing an active matrix display device, comprising: a) forming a semiconductor layer on an insulating substrate; b) forming a gate insulating layer over the whole surface of the substrate while convering ... | 02/17/2004 |
| 6677193 | Method of producing semiconductor device and its structure A method of producing a semiconductor device having an SOI transistor and a multi-layer wiring, including: preparing a silicon substrate having a front face and a back face; forming an inter-layer insulation layer on the front face of the silicon substrat... | 01/13/2004 |
