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| Number | Title | Issue Date |
| 7432169 | Method for manufacturing semiconductor device An excessive etch in the conventional manufacturing process causes a roughened surface of a contact bottom, resulting in an increased variation in characteristics of semiconductor devices. A bipolar transistor having a collector region 4 provided in a bottom ... | 10/07/2008 |
| 7329940 | Semiconductor structure and method of manufacture A structure comprises a single wafer with a first subcollector formed in a first region having a first thickness and a second subcollector formed in a second region having a second thickness, different from the first thickness. A method is also contemplated which in... | 02/12/2008 |
| 7323763 | Semiconductor device having an improved voltage controlled oscillator A semiconductor device having an improved voltage control oscillator circuit is provided. The voltage control oscillator circuit includes, in combination, a variable-capacitance element and at least one bipolar transistor on a single semiconductor substrate. The var... | 01/29/2008 |
| 7208387 | Method for manufacturing compound semiconductor wafer and compound semiconductor device A method for producing a compound semiconductor wafer used for production of HBT by vapor growth of a sub-collector layer, a collector layer, a base layer and an emitter layer in this turn on a compound semiconductor substrate using MOCVD method wherein the base lay... | 04/24/2007 |
| 6686251 | Method for fabricating a bipolar transistor having self-aligned emitter and base A method for forming a self-aligned bipolar transistor includes the steps of combination etching a silicon substrate in an opening to form a concave surface on the silicon substrate, and forming an intrinsic base and an associated emitter on the concave s... | 02/03/2004 |
| 6667202 | Semiconductor device and method for making the same A semiconductor device which has: a bipolar transistor having a collector region of a second conductivity type formed from the surface of a semiconductor substrate of a first conductivity type, a base region of a first conductivity type formed from the su... | 12/23/2003 |
| 6657242 | Trench-isolated bipolar devices In order to produce an electrical connection to an inner layer such as a bottom diffusion (103), which has a good electrical conductivity and is located inside a bipolar semiconductor device isolated by trenches (119) and which for example forms a subcoll... | 12/02/2003 |
| 6657280 | Redundant interconnect high current bipolar device A bipolar transistor having a base contact surrounded by an emitter contact. A plurality of wires extending from the base contact and the emitter contact of the bipolar transistor, wherein the wires of the base contact are stacked higher than the wires of... | 12/02/2003 |
| 6633069 | Semiconductor device A bipolar transistor has metal silicide as a base lead-out electrode instead of conventional polysilicon, and the metal silicide film extends to an edge of an etching stopper layer, to reduce an emitter resistance and restrain an occurrence of an emitter ... | 10/14/2003 |
| 6633075 | Heterojunction bipolar transistor and method for fabricating the same A heterojunction bipolar transistor includes an emitter layer, a base layer and a collector layer laminated on a top surface of a semiconductor substrate, and a heat sink layer made of a metal and provided on a rear surface of the substrate. A via hole is... | 10/14/2003 |
| 6630409 | Method of forming a polycide electrode in a semiconductor device A method of forming an emitter electrode of a bipolar transistor. The emitter electrode includes a double-layered structure of a polysilicon layer and a refractory metal silicide layer. The method includes the steps of removing a natural oxide film from a... | 10/07/2003 |
| 6614073 | SEMICONDUCTOR CHIP WITH A BASE ELECTRODE AND AN EMITTER ELECTRODE EXPOSED ON ONE OF A PAIR OF OPPOSITE LATERAL FACES AND A COLLECTOR ELECTRODE EXPOSED ON A REMAINING ONE OF THE PAIR OF THE OPPOSITE LATERAL FACES A semiconductor chip provided, at a lateral face thereof, with an electrode for external electric connection. Where a semiconductor chip has a plurality of electrodes, all the electrodes are preferably formed at one or more lateral faces of the semiconduc... | 09/02/2003 |
| 6577200 | High-frequency semiconductor device A high-frequency semiconductor amplifier circuit minimizing deterioration of high-frequency characteristics and attaining high thermal stability. A driver stage of a power amplifier has a multi-stage configuration with multi-finger HBTs connected in shunt... | 06/10/2003 |
| 6566733 | Method and system for providing a power lateral PNP transistor using a buried power buss A power lateral PNP device is disclosed which includes an epitaxial layer; a first and second collector region embedded in the epitaxial layer; an emitter region between the first and second collector regions. Therefore slots are placed in each of the reg... | 05/20/2003 |
| 6544830 | Method of manufacturing a semiconductor device with multiple emitter contact plugs A semiconductor device, such as a BiCMOS, includes a bipolar transistor having at least an emitter region. An emitter electrode is formed on the emitter region. Further, a wiring pattern is formed over the emitter region. A plurality of contact plugs are ... | 04/08/2003 |
| 6504231 | Bipolar transistor in which impurities are introduced from emitter electrode material to form emitter region A first insulating film 4 having a first opening portion is formed on an emitter region 10 and a second insulating film 6 having a second opening portion smaller than the first opening portion is formed on the first insulating film 4. The first and second... | 01/07/2003 |
| 6504232 | Integrated circuit components thereof and manufacturing method The present invention relates to a collector pin and a trench in an integrated circuit intended for high speed communication, and to a manufacturing method for these items. The collector pin is achieved by creating an area which is implantation damaged or... | 01/07/2003 |
| 6476452 | Bipolar/BiCMOS semiconductor device An N type buried layer is buried in a P type silicon substrate. An N type epitaxial layer is formed on this buried layer. A P type intrinsic base region and an extrinsic base region are formed on the surface of the epitaxial layer. An N type emitter regio... | 11/05/2002 |
| 6406972 | Integrated circuit, components thereof and manufacturing method The present invention relates to a collector pin and a trench in an integrated circuit intended for high speed communication, and to a manufacturing method for these items. The collector pin is achieved by creating an area which is implantation damaged or... | 06/18/2002 |
| 6399999 | Semiconductor device with extra control wiring for improving breakdown voltage In a lateral bipolar transistor, a control wiring layer is laid down under an emitter electrode wiring layer, and a voltage according to a reverse bias voltage applied to the collector diffusion layer is applied to the control wiring layer, thereby preven... | 06/04/2002 |
| 6396110 | Semiconductor device with multiple emitter contact plugs A semiconductor device, such as a BiCMOS, includes a bipolar transistor having at least an emitter region. An emitter electrode is formed on the emitter region. Further, a wiring pattern is formed over the emitter region. A plurality of contact plugs are ... | 05/28/2002 |
| 6395608 | Heterojunction bipolar transistor and its fabrication method A heterojunction bipolar transistor and its fabrication method is disclosed. The heterojunction bipolar transistor includes a substrate; a collector layer formed to have a ledge or MESA on the substrate; a collector electrode formed on the collector layer... | 05/28/2002 |
| 6380017 | Polysilicon-edge, base-emitter super self-aligned, low-power, high-frequency bipolar transistor and method of forming the transistor A low-power high-frequency bipolar transistor is formed to have a small self-aligned intrinsic base region, and small self-aligned extrinsic base and emitter regions that contact the intrinsic base region. The small regions reduce the base resistance, the... | 04/30/2002 |
| 6355972 | Semiconductor device and method of manufacturing same The invention relates to a semiconductor device comprising a bipolar transistor having a collector (1), a base (2) and an emitter (3) at its active area (A). The semiconductor body (10) of the device is covered with an insulating layer (20). At least a pa... | 03/12/2002 |
| 6319777 | Trench semiconductor device manufacture with a thicker upper insulating layer In the manufacture of semiconductor devices that have an electrode (11,41) in an insulated trench (20), for example a trench-gate MOSFET, process steps are performed to line the trench walls with a lower insulating layer (21) in a lower part of the trench... | 11/20/2001 |
| 6265747 | Semiconductor device having OHMIC connection that utilizes peak impurity concentration region A semiconductor device which has: a bipolar transistor having a collector region of a second conductivity type formed from the surface of a semiconductor substrate of a first conductivity type, a base region of a first conductivity type formed from the su... | 07/24/2001 |
| 6255184 | Fabrication process for a three dimensional trench emitter bipolar transistor A process for fabricating a bipolar junction transistor, featuring an N type, polysilicon emitter structure, located in an emitter trench, and featuring a narrow width. P type base region, located directly underlying an N type, emitter region, which is fo... | 07/03/2001 |
| 6251739 | Integrated circuit, components thereof and manufacturing method The present invention relates to a collector pin and a trench in an integrated circuit intended for high speed communication, and to a manufacturing method for these items. The collector pin is achieved by creating an area which is implantation damaged or... | 06/26/2001 |
| 6198154 | PNP lateral bipolar electronic device A lateral PNP bipolar electronic device integrated monolithically on a semiconductor substrate together with other NPN bipolar devices capable of being operated at high frequencies. The PNP device is incorporated to an electrically insulated multilayer st... | 03/06/2001 |
| 6121102 | Method of electrical connection through an isolation trench to form trench-isolated bipolar devices In order to produce an electrical connection to an inner layer such as a bottom diffusion (103), which has a good electrical conductivity and is located inside a bipolar semiconductor device isolated by trenches (119) and which for example forms a subcoll... | 09/19/2000 |
| 6087675 | Semiconductor device with an insulation film having emitter contact windows filled with polysilicon film The present invention relates to a contact window structure having an insulation layer extending over an electrically conductive region. The insulation layer further has a plurality of contact windows which are filled with electrically conductive layers s... | 07/11/2000 |
| 6051872 | Semiconductor integration device and fabrication method of the same A lead electrode (57) is formed to expose an active base region (61). On the lead electrode (57) is formed a lead electrode (64) for an emitter electrode via an insulation film (56). When a base contact hole (65') for exposing the lead electrode (57) and ... | 04/18/2000 |
| 6046493 | Semiconductor device with special emitter connection A semiconductor device provided with a semiconductor substrate with a bipolar transistor having a collector region of a first conductivity type, a base region adjoining the collector region and of a second conductivity type opposed to the first, and an el... | 04/04/2000 |
| 6027991 | Method of making a silicide semiconductor device with junction breakdown prevention A method of making a semiconductor device includes a semiconductor substrate, an impurity doped region formed in the semiconductor substrate, an insulating layer formed on the semiconductor substrate having an opening leading to the impurity doped region,... | 02/22/2000 |
| 6020250 | Stacked devices Chips having subsurface structures within or adjacent a horizontal trench in bulk single crystal semiconductor are presented. Structures include three terminal devices, such as FETs and bipolar transistors, rectifying contacts, such as pn diodes and Schot... | 02/01/2000 |
| 5986325 | Microwave integrated circuit device The present invention provides a microwave integrated circuit device in which a sufficiently large gain can be obtained even in a high-frequency region by effectively reducing a ground inductance of a transistor. The device includes both a semiconductor s... | 11/16/1999 |
| 5962913 | Bipolar transistor having a particular contact structure A base region and an emitter region are formed at a surface of an n-well region (collector region). A contact hole reaching a portion of the surface of the collector region is formed, a contact hole reaching a portion of the surface of the emitter region ... | 10/05/1999 |
| 5907180 | Ballast monitoring for radio frequency power transistors The present invention, generally speaking, provides an apparatus and method whereby the current flow through an RF power transistor may be monitored without the use of any external parts. More particularly, in accordance with one embodiment of the inventi... | 05/25/1999 |
| 5877539 | Bipolar transistor with a reduced collector series resistance A collector structure in a bipolar transistor on a semiconductor substrate is surrounded by trench isolations. A well region has a first impurity concentration and extends in an upper portion of the semiconductor substrate surrounded by the trench isolati... | 03/02/1999 |
| 5721147 | Methods of forming bipolar junction transistors Methods of forming bipolar junction transistors include the steps of forming a first insulating layer on a face of a semiconductor substrate containing a collector region of first conductivity type therein and then forming an opening in the first insulati... | 02/24/1998 |
