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| Number | Title | Issue Date |
| 7259409 | Thin film device and its fabrication method A thin film device includes a metal sulfide layer formed on a single crystal silicon substrate by epitaxial growth; and a compound thin film with ionic bonding, which is formed on the metal sulfide layer by epitaxial growth. Alternatively, a thin film device include... | 08/21/2007 |
| 7183602 | Ferroelectric capacitor hydrogen barriers and methods for fabricating the same Hydrogen barriers and fabrication methods are provided for protecting ferroelectric capacitors (CFE) from hydrogen diffusion in semiconductor devices (102), wherein nitrided aluminum oxide (N—AlOx) is formed over a ferroelectric capacitor (C... | 02/27/2007 |
| 7064346 | Transistor and semiconductor device In an npn-type transistor, the emitter 42 and the collector 43 are formed of an n-type transparent semiconductor, and the base 41 is formed by a p-type transparent semiconductor. The base electrode 44, the emitter electrode 45 and ... | 06/20/2006 |
| 6624442 | Method of forming p-n junction on ZnO thin film and p-n junction thin film The present invention discloses a method of forming a p-n junction on a ZnO thin film and a p-n junction thin film. The object of the present invention is to provide a method of forming a p-n junction on a ZnO thin film and a p-n junction thin film which ... | 09/23/2003 |
| 6624441 | Homoepitaxial layers of p-type zinc oxide and the fabrication thereof A semiconductor structure for providing an epitaxial zinc oxide layer having p-type conduction for semiconductor device manufacture and methods of depositing the p-type zinc oxide layer. A zinc oxide layer is deposited epitaxially by molecular beam epitax... | 09/23/2003 |
| 6444504 | Multilayer ZnO polycrystallin diode A method of manufacturing a multilayer ZnO polycrystalline diode that protects against electrostatic discharges, over-current, and voltage surges overcoming the aforementioned drawbacks is provided. The present invention further includes preparing a plura... | 09/03/2002 |
| 6316819 | Multilayer ZnO polycrystalline diode A multilayer ZnO polycrystalline diode that protects against electrostatic discharges, over-current, and voltage surges is provided. The polycrystalline diode includes a block having a plurality of polycrystalline layers in parallel having a first lateral... | 11/13/2001 |
| 5594263 | Semiconductor device containing a semiconducting crystalline nanoporous material This invention relates to a semiconductor device comprising at least one p-n junction. The junction is formed from a "p" semiconductor contacting an "n" semiconductor. Said device characterized in that at least one of said "p" or "n" semiconductor is a na... | 01/14/1997 |
| 5274263 | FET structure for use in narrow bandgap semiconductors A FET structure for use in narrow bandgap semiconductors comprising a narrow bandgap semiconductor substrate 24, an implanted source region 12 of a conductivity type opposite that of the substrate 24, an implanted drain region 12 of the same conductivity ... | 12/28/1993 |
| 5057183 | Process for preparing epitaxial II-VI compound semiconductor An improved process for the production of an epitaxial II-VI compound semiconductor containing sulfur as the VI element by molecular beam epitaxy employing a sulfur molecular beam and a II element molecular beam in which the sulfur molecular beam is provi... | 10/15/1991 |
| 4777517 | Compound semiconductor integrated circuit device An IC device comprising a plurality of FET's using a compound semiconductor, more specifically, a zincblende type semiconductor substrate, having a surface of a (111) plane. By use of this plane, differences of characteristics of the FET's depending on di... | 10/11/1988 |
| 4630090 | Mercury cadmium telluride infrared focal plane devices having step insulator and process for making same The disclosure relates to a stepped insulator process for HgCdTe infared focal plane devices, the insulator being a combination of two insulator materials, ZnS and SiO, which differ in dielectric constant and chemical reactivity. The structure is patterne... | 12/16/1986 |
| 4170818 | Barrier height voltage reference A barrier height voltage reference includes two field-effect transistors which are substantially identical except for their gate-to-channel potential barrier characteristics and which are biased to carry equal drain currents at equal drain voltages. The r... | 10/16/1979 |
| 4123295 | Mercury chalcogenide contact for semiconductor devices An improved contact material for use in the fabrication of semiconductor devices is provided. This material comprises one of the mercury chalcogenides. The application of this material to a nondegenerate semiconductor may be made by the process of evapora... | 10/31/1978 |
| 4084172 | Highly electronegative (SN)x contacts to semiconductors Polymeric sulfur nitride is a conductive metallic compound providing a highly electronegative contact for both n- and p- type semiconductor materials. Tests show the electronegativity to be higher than Au. Larger barriers are obtained for n-type semicondu... | 04/11/1978 |
| 4025910 | Solid-state camera employing non-volatile charge storage elements A non-volatile charge storage element wherein long-term charge storage occurs in the interface states of the element. Charge is stored at low applied voltages (ࣘ 10 volts) in short times (ࣘ 1 microseconds) and is stored as long as 105 secon... | 05/24/1977 |
| 3987474 | Non-volatile charge storage elements and an information storage apparatus employing such elements A non-volatile charge storage element wherein long-term charge storage occurs in the interface states of the element. Charge is stored at low applied voltages (ࣘ 10 volts) in short times (ࣘ 1 microseconds) and is stored as long as 105 secon... | 10/19/1976 |
