Class 257/E29.07 - Quantum wire structures (EPO)

Subclass of Class 257 - Active solid-state devices (e.g., transistors, solid-state diodes)
Definition: This subclass is indented under subclass E29.069. This
No. of patents: 60
Last issue date: 09/09/2008

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Number	Title	Issue Date
7423285	Wire cross-point fet structure The difficulty of miniaturization of large-scale integrated circuits in electric devices based on the conventional techniques involving three-dimensional device structures or the introduction of novel materials is solved. Wires 2 and 3 are disposed to ...	09/09/2008
7408235	Quantum coherent switch utilizing commensurate nanoelectrode and charge density periodicities A quantum coherent switch having a substrate formed from a density wave (DW) material capable of having a periodic electron density modulation or spin density modulation, a dielectric layer formed onto a surface of the substrate that is orthogonal to an intrinsic wa...	08/05/2008
7394118	Chemical sensor using semiconducting metal oxide nanowires Indium oxide nanowires are used for determining information about different chemicals or Biologics. Chemicals are absorbed to the surface of the nanowires, and cause the semiconducting characteristics of the Nanowires to change. These changed characteristics are sen...	07/01/2008
7354871	Nanowires comprising metal nanodots and method for producing the same Nanowires methods for producing the nanowires are provided. The nanowires include a plurality of metal nanodots uniformly disposed therein, and a core portion, wherein each of the plurality of metal nanodots is coupled to the core portion. According to the method, m...	04/08/2008
7339186	IC chip with nanowires Arrangement of nanowires with PN junctions between bit lines and word lines are arranged as a ROM memory cell array. A number of the nanowires have dielectric regions and are present only as a dummy. The connections between word and bit lines may also exist as trans...	03/04/2008
7335908	Nanostructures and methods for manufacturing the same A resonant tunneling diode, and other one dimensional electronic, photonic structures, and electromechanical MEMS devices, are formed as a heterostructure in a nanowhisker by forming length segments of the whisker with different materials having different band gaps....	02/26/2008
7208779	Semiconductor device A semiconductor device includes a substrate having an active layer, an element region provided in the active layer, a P-type semiconductor region provided in the element region, and first and second N-type semiconductor regions provided in the element region, locate...	04/24/2007
7115971	Nanowire varactor diode and methods of making same A nanowire varactor diode and methods of making the same are disclosed. The structure comprises a coaxial capacitor running the length of the semiconductor nanowire. In one embodiment, a semiconductor nanowire of a first conductivity type is deposited on a substrate...	10/03/2006
7112816	Carbon nanotube sensor and method of producing the same A carbon nanotube sensor and a method of producing the carbon nanotube sensor are disclosed. The sensor detects small particles and molecules. The sensor includes a gate, a source and a drain positioned on the gate, and a carbon nanotube grown from a catalytic mater...	09/26/2006
7087920	Nanowire, circuit incorporating nanowire, and methods of selecting conductance of the nanowire and configuring the circuit A nanowire includes a single crystalline semiconductor material having an exterior surface and an interior region and at least one dopant atom. At least a portion of the nanowire thermally switches between two conductance states; a high conductance state, where a hi...	08/08/2006
6696372	Method of fabricating a semiconductor structure having quantum wires and a semiconductor device including such structure A method for the production of a semiconductor structure having self-organized quantum wires is described. The process includes the formation of multi-atomic steps on a (001) oriented semiconductor substrate inclined at an angle toward the [110] direction...	02/24/2004
6667492	Quantum ridges and tips The present invention provides a quantum structure product comprising a substrate having quantum ridges and quantum tips on at least one surface thereof. In some embodiments of the invention quantum ridges may support quantum wires and the quantum tips ma...	12/23/2003
6512242	Resonant-tunneling electronic transportors An electronic transportor that allows for the resonant tunneling of electrons between guided states, such as those found in a quantum wire or a line defect in a solid, and localized states, such as those found in a quantum dot or a point defect in a solid...	01/28/2003
6274007	Methods of formation of a silicon nanostructure, a silicon quantum wire array and devices based thereon A process for controllably forming silicon nanostructures such as a silicon quantum wire array. A silicon surface is sputtered by a uniform flow of nitrogen molecular ions in an ultrahigh vacuum so as to form a periodic wave-like relief in which the troug...	08/14/2001
6242275	Method for manufacturing quantum wires A method for manufacturing quantum wires is provided in which a stacked structure having AlAs layers and GaAs layers alternatively is formed, V-grooves are formed beside the GaAs layers and the quantum wires are formed using the V-grooves. The method for ...	06/05/2001
6235547	Semiconductor device and method of fabricating the same In a semiconductor device, concave sections in which an opening area becomes small in proportion as a depth becomes deep are formed in a crystal layer, and a quantum structure is formed on at least one crystal face of a bottom section of the concave secti...	05/22/2001
6221720	Method of making an electronic device and the same Laminated layers including semiconductor or metal thin layers and insulative thin layers are formed on a substrate and after the laminated layers are patterned, the laminated layers are oxidized from their side to form an oxidized area. This way, a 0-dime...	04/24/2001
6127246	Method of making an electronic device and the same Laminated layers including semiconductor or metal thin layers and insulative thin layers are formed on a substrate and after the laminated layers are patterned, and the laminated layers are oxidized from their side to form an oxidized area. This way, a 0-...	10/03/2000
6060724	Quantum wire logic gate A quantum wire switch and a switching method for switching charge carriers between a first output and a second output utilizing quantum interference of the charge carriers. A quantum switch includes a quantum wire extending from an input to a first output...	05/09/2000
6011271	Semiconductor device and method of fabricating the same In a semiconductor device, concave sections in which an opening area becomes small in proportion as a depth becomes deep are formed in a crystal layer, and a quantum structure is formed on at least one crystal face of a bottom section of the concave secti...	01/04/2000
5945686	Tunneling electronic device Laminated layers including semiconductor or metal thin layers and insulative thin layers are formed on a substrate and after the laminated layers are patterned, and the laminated layers are oxidized from their side to form an oxidized area. This way, a 0-...	08/31/1999
5922621	Quantum semiconductor device and a fabrication process thereof A method for fabricating a quantum semiconductor device includes the steps of forming an etch pit of a triangular pyramid on a {111}A-oriented principal surface of a substrate having zinc blende structure by a dry etching process, and depositing semicondu...	07/13/1999
5903010	Quantum wire switch and switching method A quantum wire switch and a switching method for switching charge carriers between a first output and a second output utilizing quantum interference of the charge carriers. A quantum switch includes a quantum wire extending from an input to a first output...	05/11/1999
5886360	Semiconductor device A semiconductor device includes a semiconductor substrate; a semiconductor laminated structure including a first barrier layer, a conduction layer including a natural superlattice, and a second barrier layer, disposed on the semiconductor substrate. The f...	03/23/1999
5882952	Semiconductor device including quantum wells or quantum wires and method of making semiconductor device A method of fabricating a semiconductor device includes: forming multiatomic steps by MOCVD on a (110) semiconductor substrate inclined at an angle toward the 001! direction or the 111! direction; and growing at least one double heterostructure includ...	03/16/1999
5833870	Method for forming a high density quantum wire A method for forming a highly dense quantum wire, the method comprising the steps of: depositing a dielectric mask having dielectric patterns on the top surface of a semiconductor (100) substrate; forming the dielectric patterns in parallel to a (011) ori...	11/10/1998
5828090	Charge transfer device A charge transfer device comprises a quantum wire and a one-dimensional quantum dots array extending helically, for example, and including quantum dots which are aligned in close relation to couple with each other and to surround the quantum wire. By appl...	10/27/1998
5828076	Microelectronic component and process for its production In its gate region (10), a silicon MOS technology component has a surface structure (6) having edges and/or vertices at which inversion regions, suitable as quantum wires or quantum dots, are preferentially formed when a gate voltage is applied. The surfa...	10/27/1998
5804475	Method of forming an interband lateral resonant tunneling transistor This invention describes a nanometer scale interband lateral resonant tunneling transistor, and the method for producing the same, with lateral geometry, good fanout properties and suitable for incorporation into large-scale integrated circuits. The trans...	09/08/1998
5714765	Method of fabricating a compositional semiconductor device A method of fabricating a compositional semiconductor device comprising a antum well wire or quantum dot superlattice structure, in particular a device selected from the group comprising lasers, photodiodes, resonant tunneling transistors, resonant tunnel...	02/03/1998
5679962	Semiconductor device and a single electron device A semiconductor device includes a semi-insulating semiconductor substrate, a semiconductor layer structure including at least an undoped layer of a first semiconductor, an undoped spacer layer of a second semiconductor having an electron affinity smaller ...	10/21/1997
5663592	Semiconductor device having diffraction grating A semiconductor device has a substrate composed of a semiconductor which has one of sphalerite and diamond crystal structures. The substrate has a plane orientation inclined at 0.5° to 15° with respect to one of {111} and {110} planes indicated by Mille...	09/02/1997
5656821	Quantum semiconductor device with triangular etch pit A semiconductor device is provided, including a semiconductor substrate of zinc blend structure, defined by a principal surface substantially coinciding to a {111}A-oriented crystal surface; an etch pit of the shape of a triangular pyramid, formed on the ...	08/12/1997
5643828	Manufacturing method of a quantum device A method of manufacturing a quantum device such as a coupled quantum boxes device are disclosed. The quantum device comprises: a semiconductor substrate; a plurality of box portions made of a first semiconductor; and a layer made of a second semiconductor...	07/01/1997
5612255	One dimensional silicon quantum wire devices and the method of manufacture thereof A silicon quantum wire transistor. A silicon substrate is sub-etched leaving a thin ridge (ࣘ500 Å tall by ࣘ500 Å wide) of silicon a quantum wire, on the substrate surface. An FET may be formed from the quantum wire by depositing or growing gate oxid...	03/18/1997
5606190	Microelectronic circuit structure having improved structural fineness and method for manufacturing same A microelectronic circuit structure has a semiconductor layer and a dielectric layer that are arranged neighboring one another. The dielectric layer comprises a charge distribution localized close to the boundary surface to the semiconductor layer which e...	02/25/1997
5571376	Quantum device and method of making such a device A quantum confined device is provided having raised portions formed on opposing walls of a groove, thereby defining a region of reduced width in the vicinity of the intersection of the walls. During fabrication, a "V" groove is formed in a substrate and t...	11/05/1996
5539214	Quantum bridges fabricated by selective etching of superlattice structures A quantum bridge structure including wires of a semiconductor material such as silicon which are formed by selectively etching a superlattice of alternating layers of at least two semiconductor materials. The quantum bridge is useful as a photo emission d...	07/23/1996
5529952	Method of fabricating lateral resonant tunneling structure A resonant tunneling diode (400) with lateral carrier transport through tunneling barriers (404, 408) grown as a refilling of trenches etched into a transverse quantum well (410) and defining a quantum wire or quantum dot (406). The fabrication method use...	06/25/1996
5459334	Negative absolute conductance device and method A quantum wire embedded in another material or a quantum wire which is free standing. Specifically, the quantum wire structure is fabricated such that a quantum well semiconductor material, for example Gallium Arsenide (GaAS), is embedded in a quantum bar...	10/17/1995

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Class 257/E29.07 - Quantum wire structures (EPO)