Did You Know...
...that it was melting ice cream that inspired the invention of the outboard motor? It was a lovely August day and Ole Evinrude was rowing his boat to his favorite island picnic spot. As he rowed, he watched his ice cream melt and wished he had a faster way to get to the island. At that moment the idea for the outboard motor was born!
PatentStorm News
Make the Most of Our Site
See this month's Top Inventors and Most Cited Patents.
Stay on top of the latest innovations by subscribing to an RSS feed.
Registered users: Manage your profile.
| Number | Title | Issue Date |
| 7423316 | Semiconductor devices The dense accumulation of hole carriers can be obtained over a wide range of a semiconductor region in a floating state formed within a body region of an IGBT. An n type semiconductor region (52) whose potential is floating is formed within a p− ... | 09/09/2008 |
| 7417282 | Vertical double-diffused metal oxide semiconductor (VDMOS) device incorporating reverse diode The present invention disclosed herein is a Vertical Double-Diffused Metal Oxide Semiconductor (VDMOS) device incorporating a reverse diode. This device includes a plurality of source regions isolated from a drain region. A source region in close proximity to the dr... | 08/26/2008 |
| 7408234 | Semiconductor device and method for manufacturing the same An object of the present invention is to provide a semiconductor device that is able to realize a low on-resistance maintaining a high drain-to-source breakdown voltage, and a method for manufacturing thereof, the present invention including: a supporting substrate;... | 08/05/2008 |
| 7381603 | Semiconductor structure with improved on resistance and breakdown voltage performance In one embodiment, a lateral FET cell is formed in a body of semiconductor material. The lateral FET cell includes a super junction structure formed in a drift region between a drain contact and a body region. The super junction structure includes a plurality of spa... | 06/03/2008 |
| 7372104 | High voltage CMOS devices A transistor suitable for high-voltage applications is provided. The transistor is formed on a substrate having a deep well of a first conductivity type. A first well of the first conductivity type and a second well of a second conductivity type are formed such that... | 05/13/2008 |
| 7365402 | LDMOS transistor An LDMOS semiconductor transistor structure comprises a substrate having an epitaxial layer of a first conductivity type, a source region extending from a surface of the epitaxial layer of a second conductivity type, a lightly doped drain region within the epitaxial... | 04/29/2008 |
| 7335944 | High-voltage vertical transistor with a multi-gradient drain doping profile A high-voltage transistor includes first and second trenches that define a mesa in a semiconductor substrate. First and second field plate members are respectively disposed in the first and second trenches, with each of the first and second field plate members being... | 02/26/2008 |
| 7319257 | Power semiconductor device A power semiconductor device includes trenches disposed in a first base layer of a first conductivity type at intervals to partition main and dummy cells, at a position remote from a collector layer of a second conductivity type. In the main cell, a second base laye... | 01/15/2008 |
| 7291888 | ESD protection circuit using a transistor chain An electrostatic discharge (ESD) protection circuit for dissipating an ESD current from a first pad to a second pad during an ESD event. The ESD protection circuit includes a first bipolar transistor having an emitter coupled to the first pad. A second bipolar trans... | 11/06/2007 |
| 6703665 | Transistor A withstand voltage region of a second conductivity type is formed in a drain layer of a first conductivity type in a semiconductor substrate, and a conductive region of the first conductivity type is partly formed in the withstand voltage region by being... | 03/09/2004 |
| 6703671 | Insulated gate semiconductor device and method of manufacturing the same Impurity regions 110 that can form an energy barrier are artificially and locally disposed in a channel formation region 111. The impurity regions 110 restrain a depletion layer that extends from a drift region 102 toward a channel formation region 111, a... | 03/09/2004 |
| 6703664 | Power FET device A power FET device includes a semiconductor wafer substrate having first and second surfaces, a gate electrode extending over the first surface of the substrate but insulated therefrom, and a drain electrode extending over the second surface of the substr... | 03/09/2004 |
| 6700156 | Insulated gate semiconductor device An insulated gate semiconductor device includes a first semiconductor layer of a first conductivity type. A plurality of second semiconductor layers of a second conductivity type selectively formed in a surface area of the first semiconductor layer. At le... | 03/02/2004 |
| 6700157 | Semiconductor device A semiconductor device has a drift region in which a drift current flows if it is in the ON mode and which is depleted if it is in the OFF mode. The drift region is formed as a structure having a plurality of first conductive type divided drift regions an... | 03/02/2004 |
| 6700160 | Double-diffused MOS (DMOS) power transistor with a channel compensating implant An improved DMOS power transistor (20) with a single p-body implant (12) and including an n-type channel compensating implant (NCCI) (24). The improved DMOS power transistor (20) provides a more favorable trade-off between threshold voltage (VT... | 03/02/2004 |
| 6683331 | Trench IGBT An IGBT has parallel spaced trenches lined with gate oxide and filled with conductive polysilicon gate bodies. The trenches extend through a P- base region which is about 7 microns deep. A deep narrow N+ emitter diffusion is at the t... | 01/27/2004 |
| 6677643 | Super-junction semiconductor device A super-junction semiconductor is provided that facilitates easy mass-production thereof, reducing the tradeoff relation between the on-resistance and the breakdown voltage, obtaining a high breakdown voltage and reducing the on-resistance to increase the... | 01/13/2004 |
| 6674125 | Semiconductor power component and a corresponding manufacturing method A semiconductor power component is described having a rear-side anode contact, a rear-side emitter region of a first conductivity type, which is connected to the rear-side anode contact, a drift region, which is connected to the rear-side emitter region a... | 01/06/2004 |
| 6670685 | Method of manufacturing and structure of semiconductor device with floating ring structure A high voltage semiconductor device includes a drain region disposed within a semiconductor substrate. The semiconductor device further includes a field oxide layer disposed outwardly from the drain region of the semiconductor substrate. The semiconductor... | 12/30/2003 |
| 6670658 | Power semiconductor element capable of improving short circuit withstand capability while maintaining low on-voltage and method of fabricating the same In a p-type base layer of a trench IGBT comprising a p-type collector layer, an n-type base layer formed on the p-type collector layer, the p-type base layer formed on the n-type base layer, and an n-type emitter layer formed on the surface of the p-type ... | 12/30/2003 |
| 6670244 | Method for fabricating a body region for a vertical MOS transistor arrangement having a reduced on resistivity A method is provided for fabricating a body region of a first conduction type for a vertical MOS transistor configuration in a semiconductor body such that the body region has a reduced resistivity without a corresponding reduction in the breakdown voltag... | 12/30/2003 |
| 6667515 | High breakdown voltage semiconductor device A high breakdown voltage semiconductor device includes an active area and a surrounding region. In the active area, a second semiconductor layer of a second conductivity type is formed in a first semiconductor layer of a first conductivity type. A third s... | 12/23/2003 |
| 6664591 | Insulated gate semiconductor device An insulated gate semiconductor device includes a first base layer of a first conduction type; a second base layer of a second conduction type formed on a first surface of the first base layer; a source layer of the first conduction type selectively forme... | 12/16/2003 |
| 6664594 | Power MOS device with asymmetrical channel structure for enhanced linear operation capability A power MOSFET type device, which can include an IGBT or other VDMOS device having similar forward transfer characteristics, is formed with an asymmetrical channel, to produce different gate threshold voltage characteristics in different parts of the devi... | 12/16/2003 |
| 6661054 | Semiconductor device and method of fabricating the same A gate electrode is provided to fill up a trench while covering its opening. Assuming that WG represents the diameter (sectional width) of a head portion of the gate electrode located upward beyond a P-type base layer and an... | 12/09/2003 |
| 6649459 | Method for manufacturing a semiconductor component The invention relates to a method for producing a semiconductor component including semiconductor areas of different conductivity types which are alternately positioned in a semiconductor body. The semiconductor areas of different conductivity types exten... | 11/18/2003 |
| 6649974 | Field-effect controlled semiconductor device having a non-overlapping gate electrode and drift region and its manufacturing method A semiconductor component includes a first connection zone of a first conductivity type for providing a contact at a first side of a semiconductor body and a second connection zone of the first conductivity type for providing a contact at the second side ... | 11/18/2003 |
| 6639276 | Power MOSFET with ultra-deep base and reduced on resistance A power semiconductor device formed of a substrate of a first conductivity type, an epitaxial layer of a first conductivity type formed on a surface of the substrate, a plurality of lightly doped spaced base regions of a second conductivity type formed to... | 10/28/2003 |
| 6639277 | High-voltage transistor with multi-layer conduction region A high voltage insulated gate field-effect transistor includes an insulated gate field-effect device structure having a source and a drain, the drain being formed with an extended well region having one or more buried layers of opposite conduction type sa... | 10/28/2003 |
| 6633065 | High-voltage transistor with multi-layer conduction region A high voltage insulated gate field-effect transistor includes an insulated gate field-effect device structure having a source and a drain, the drain being formed with an extended well region having one or more buried layers of opposite conduction type sa... | 10/14/2003 |
| 6627948 | Vertical layer type semiconductor device A semiconductor device has a drift region in which a drift current flows if it is in the ON mode and which is depleted if it is in the OFF mode. The drift region is formed as a structure having a plurality of first conductive type divided drift regions an... | 09/30/2003 |
| 6627950 | Trench DMOS power transistor with field-shaping body profile and three-dimensional geometry Power MOSFET apparatus, and method for its production, that suppresses voltage breakdown near the gate, using a polygon-shaped trench in which the gate is positioned, using a shaped deep body junction that partly lies below the trench bottom, and using sp... | 09/30/2003 |
| 6627499 | Semiconductor device and method of manufacturing the same Formed in a part of the base region is an impurity diffusion region extending in a vertical direction and having an impurity concentration lower than that in the other portion of the base region. By the formation of the impurity diffusion region, the depl... | 09/30/2003 |
| 6620653 | Semiconductor device and method of manufacturing the same A negative buffer layer and a positive collector layer are formed on a side of one surface of a semiconductor substrate. The positive collector layer is set to have a low dose amount and set shallow so that a low injection efficiency emitter structure is ... | 09/16/2003 |
| 6614075 | Semiconductor device and method of manufacturing the same A semiconductor device includes a source region 4, a channel region 8, a drain region 5 and a gate electrode which is patterned so that its side wall is tapered to be more narrow toward the top. A drift region 22 is formed between the channel region 8 ... | 09/02/2003 |
| 6611021 | Semiconductor device and the method of manufacturing the same A semiconductor device includes an improved drain drift layer structure of alternating conductivity types, that is easy to manufacture, and that facilitates realizing a high current capacity and a high breakdown voltage and to provide a method of manufact... | 08/26/2003 |
| 6608336 | Lateral double diffused MOS transistor To reduce ON-state resistance with desired withstand voltage secured, a semiconductor device provided with a gate electrode formed on a semiconductor substrate via a gate insulating film, an LP layer (a P-type body region) formed so that the LP layer is a... | 08/19/2003 |
| 6602768 | MOS-gated power device with doped polysilicon body and process for forming same An improved MOS-gated power device 300 with a substrate 101 having an upper layer 101a of doped monocrystalline silicon of a first conduction type that includes a doped well region 107 of a second conduction type. The substrate further includes at least o... | 08/05/2003 |
| 6579782 | Vertical power component manufacturing method A method for manufacturing a vertical power component on a substrate formed of a lightly-doped silicon wafer, including the steps of boring on the lower surface side of the substrate a succession of holes perpendicular to this surface; diffusing a dopant ... | 06/17/2003 |
| 6570219 | High-voltage transistor with multi-layer conduction region A high voltage insulated gate field-effect transistor includes an insulated gate field-effect device structure having a source and a drain, the drain being formed with an extended well region having one or more buried layers of opposite conduction type sa... | 05/27/2003 |
