Class 257/E29.044 - Base region of bipolar transistors (EPO)

Subclass of Class 257 - Active solid-state devices (e.g., transistors, solid-state diodes)
Definition: This subclass is indented under subclass E29.043. This
No. of patents: 299
Last issue date: 10/28/2008

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Number	Title	Issue Date
7442616	Method of manufacturing a bipolar transistor and bipolar transistor thereof A bipolar transistor (100) is manufactured using the following processes: (a) forming a base electrode layer (129) as a portion of a base electrode over a semiconductor substrate (110); (b) forming a first portion of an emitter electrode (154...	10/28/2008
7358546	Heterobipolar transistor and method of fabricating the same The present invention realizes a heterobipolar transistor using a SiGeC base layer in order to improve its electric characteristics. Specifically, the distribution of carbon and boron within the base layer is controlled so that the concentration of boron is higher t...	04/15/2008
7256433	Bipolar transistor and a method of manufacturing the same A bipolar transistor having enhanced characteristics is fabricated by etching a base mesa, which is formed below an emitter mesa (upper emitter layer) and a base electrode, so as to have jut regions on the edges of its generally rectangular region. A mask film, e.g....	08/14/2007
7091100	Polysilicon bipolar transistor and method of manufacturing it In the inventive method of producing a base terminal structure for a bipolar transistor, an etch stop layer is applied on a single-crystal semiconductor substrate, a poly-crystal base terminal layer is produced on the etch stop layer and an emitter window is etched ...	08/15/2006
6699765	Method of fabricating a bipolar transistor using selective epitaxially grown SiGe base layer Embodiments of a bipolar transistor are disclosed, along with methods for making the transistor. An exemplary transistor includes a collector region in a semiconductor substrate, a base layer overlying the collector region and bound by a field oxide layer...	03/02/2004
6699741	Single poly bipolar transistor and method that uses a selectively epitaxially grown highly-boron-doped silicon layer as a diffusion source for an extrinsic base region A high frequency bipolar transistor that has a silicon germanium intrinsic base region is formed in a semiconductor fabrication process that forms the extrinsic base regions after the intrinsic base region has been formed. The extrinsic base regions are e...	03/02/2004
6696342	Small emitter and base-collector bi-polar transistor In a high speed BJT device, the method for producing the device includes forming a self-aligned BJT through the use of a single mask by making use of a single layer of polysilicon. The method includes forming a window in the polysilicon to define a base p...	02/24/2004
6686251	Method for fabricating a bipolar transistor having self-aligned emitter and base A method for forming a self-aligned bipolar transistor includes the steps of combination etching a silicon substrate in an opening to form a concave surface on the silicon substrate, and forming an intrinsic base and an associated emitter on the concave s...	02/03/2004
6680494	Ultra high speed heterojunction bipolar transistor having a cantilevered base Reduction in the base to collector capacitance of a heterojunction bipolar transistor, and, improved high frequency performance is achieved using existing materials and processes by undercutting the collector (5) under the base (7) along two parallel side...	01/20/2004
6673688	Method for eliminating collector-base band gap in an HBT According to one exemplary embodiment, a heterojunction bipolar transistor comprises a base having a concentration of germanium, where the concentration of germanium decreases between a first depth and a second depth in the base. According to this exempla...	01/06/2004
6674103	HBT with nitrogen-containing current blocking base collector interface and method for current blocking An improved HBT of the invention reduces the current blocking effect at the base-collector interface. Nitrogen is incorporated at the base-collector interface in an amount sufficient to reduce the conduction band energy of the collector at the base-collec...	01/06/2004
6664609	High frequency differential amplification circuit with reduced parasitic capacitance Disclosed is a circuit layout of a differential amplification circuit that constitutes a Gilbert cell, in which two multiple finger bipolar transistors forming a differential amplifier are positioned substantially axially symmetrical to each other. The lo...	12/16/2003
6661037	Low emitter resistance contacts to GaAs high speed HBT A heterojunction bipolar transistor is provided having an improved current gain cutoff frequency. The heterojunction bipolar transistor includes a contact region formed from InGaAsSb. The contact region allows an emitter region of the heterojunction bipol...	12/09/2003
6649983	Vertical bipolar transistor formed using CMOS processes A vertical bipolar transistor is described which utilizes ion implantation steps which are used to form an nMOS field effect device and a pMOS field effect device. The implantation steps form an n-well, a p-well region, a pocket base region and an emitter...	11/18/2003
6642096	Bipolar transistor manufacturing A method of manufacturing a bipolar transistor in a single-crystal silicon substrate of a first conductivity type, including a step of carbon implantation at the substrate surface followed by an anneal step, before forming, by epitaxy, the transistor base...	11/04/2003
6639256	Structure for eliminating collector-base band gap discontinuity in an HBT According to one exemplary embodiment, a heterojunction bipolar transistor comprises a base having a concentration of germanium, where the concentration of germanium decreases between a first depth and a second depth in the base. According to this exempla...	10/28/2003
6630377	Method for making high-gain vertical bipolar junction transistor structures compatible with CMOS process An improved NPN bipolar transistor integratable with CMOS FET processing is achieved. The transistor is formed on a substrate using a CMOS process and one additional masking and implant step. The CMOS N wells are used to form the collector contacts (reach...	10/07/2003
6617220	Method for fabricating an epitaxial base bipolar transistor with raised extrinsic base An epitaxial base bipolar transistor including an epitaxial single crystal layer on a single crystal single substrate; a raised emitter on a portion of the single crystal layer; a raised extrinsic base on a surface of the semiconductor substrate; an insul...	09/09/2003
6600211	Bipolar transistor constructions The invention includes a bipolar transistor construction having a collector region, emitter region, and base region extending within a semiconductive material substrate. The construction further comprises separate access regions associated with the base r...	07/29/2003
6593640	Bipolar transistor and methods of forming bipolar transistors A bipolar transistor comprises a base region and an an extrinsic base region being located generally adjacent to the base region. The extrinsic base region has implanted therein a dopant and a dopant diffusion-retarding substance. The dopant diffusion-ret...	07/15/2003
6593604	Heterojunction bipolar transistor, manufacturing method therefor, and communication device therewith An emitter of a heterojunction bipolar transistor has a double-layer protrusion formed of a first emitter layer and a second emitter layer and protruded outside an external base region. The protrusion of 50 nm in total thickness is enough to prevent damag...	07/15/2003
6583494	Reduced base resistance in a bipolar transistor According to a disclosed method, a dopant spike region is formed in a link base region, which connects an intrinsic base region to an extrinsic base region. For example, the intrinsic base region can be the region in which the base-emitter junction is for...	06/24/2003
6528375	Bipolar transistor compatible with CMOS utilizing tilted ion implanted base A bipolar transistor compatible with CMOS processes utilizes only a single layer of polysilicon while maintaining the low base resistance associated with conventional double-polysilicon bipolar designs. Dopant is implanted to form the intrinsic base throu...	03/04/2003
6525349	Heterojunction bipolar transistor with tensile graded carbon-doped base layer grown by MOCVD A heterojunction bipolar transistor (HBT), having a substrate formed of indium phosphide (InP), and having emitter, base and collector layers formed over the substrate such that the base layer is disposed between the emitter and collector layers. The coll...	02/25/2003
6524921	Methods of forming bipolar transistor constructions The invention includes a bipolar transistor construction having a collector region, emitter region, and base region extending within a semiconductive material substrate. The construction further comprises separate access regions associated with the base r...	02/25/2003
6486532	Structure for reduction of base and emitter resistance and related method According to one embodiment, a semiconductor device including a base, an emitter, and an emitter contact on top of the emitter is disclosed. For example, the semiconductor device can be a silicon-germanium heterojunction bipolar transistor, in which the b...	11/26/2002
6475849	Method for reducing base resistance in a bipolar transistor According to a disclosed method, a dopant spike region is formed in a link base region, which connects an intrinsic base region to an extrinsic base region. For example, the intrinsic base region can be the region in which the base-emitter junction is for...	11/05/2002
6475887	Method of manufacturing semiconductor device A semiconductor device which can effectively prevent impurity diffusion in heat treatment for electrically activating the impurity, and a manufacturing method thereof are disclosed. In the semiconductor device, a diffusion preventing layer having a depth ...	11/05/2002
6459140	Indium-enhanced bipolar transistor A method to improve the characteristics of bipolar silicon high-frequency transistor by adding indium into the base of the transistor is described. Instead of replacing boron in the base with indium to improve the beta-Early voltage product, at the price ...	10/01/2002
6440810	Method in the fabrication of a silicon bipolar transistor In the fabrication of a silicon bipolar transistor, a method for forming base regions and for opening an emitter window is provided. A silicon substrate is provided with suitable device isolation. A first base region is formed in or on top of the substrat...	08/27/2002
6410975	Bipolar transistor with reduced base resistance According to a disclosed method, a dopant spike region is formed in a link base region, which connects an intrinsic base region to an extrinsic base region. For example, the intrinsic base region can be the region in which the base-emitter junction is for...	06/25/2002
6404039	Semiconductor device with intrinsic base diffusion layer, extrinsic base diffusion layer, and common base diffusion A bipolar transistor comprising an external base diffusion layer formed on the outer circumference of an intrinsic base diffusion layer is provided with the high withstand voltage and high reliability. A intrinsic base diffusion layer is formed on the sub...	06/11/2002
6383885	Bipolar transistor with improved reverse breakdown characteristics A bipolar transistor (10) in an IC includes a semiconductor wafer defining a collector area (14) with a first conductivity type, a base area (20) with a second conductivity type formed in the collector area (14), and an emitter formed in the base area. A ...	05/07/2002
6376322	Base-emitter region of a submicronic bipolar transistor The present invention relates to a method of manufacturing the base and emitter regions of a bipolar transistor, including the steps of depositing a first heavily-doped P-type polysilicon layer; eliminating the first polysilicon layer in its central porti...	04/23/2002
6365451	Transistor and method A method of fabricating a semiconductor device and the device. The device is fabricated by providing a substrate having a region thereover of electrically conductive material, and a dielectric first sidewall spacer on the region of electrically conductive...	04/02/2002
6329698	Forming a self-aligned epitaxial base bipolar transistor An improved method and an apparatus for forming a self-aligned epitaxial base bipolar transistor in a semiconductor material is disclosed. The method of the invention involves forming an intrinsic base region formed by growing an epitaxial semiconductor m...	12/11/2001
6316818	Vertical bipolar transistor including an extrinsic base with reduced roughness, and fabrication process The vertical bipolar transistor includes an SiGe heterojunction base formed by a stack of layers of silicon and silicon-germanium resting on an initial layer of silicon nitride extending over a side insulation region surrounding the upper part of the intr...	11/13/2001
6287930	Methods of forming bipolar junction transistors having trench-based base electrodes Bipolar junction transistors utilize trench-based base electrodes and lateral base electrode extensions to facilitate the use of preferred self-alignment processing techniques. A bipolar junction transistor is provided that includes an intrinsic collector...	09/11/2001
6271577	Transistor and method A method of fabricating a semiconductor device and the device. The device is fabricated by providing a substrate having a region thereover of electrically conductive material, and a dielectric first sidewall spacer on the region of electrically conductive...	08/07/2001
6262472	Bipolar transistor compatible with CMOS utilizing tilted ion implanted base A bipolar transistor compatible with CMOS processes utilizes only a single layer of polysilicon while maintaining the low base resistance associated with conventional double-polysilicon bipolar designs. Dopant is implanted to form the intrinsic base throu...	07/17/2001

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Class 257/E29.044 - Base region of bipolar transistors (EPO)