Class 257/E29.022 - Characterized by shape of semiconductor body (EPO)

Subclass of Class 257 - Active solid-state devices (e.g., transistors, solid-state diodes)
Definition: This subclass is indented under subclass E29.005. This
No. of patents: 210
Last issue date: 08/19/2008

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Number	Title	Issue Date
7414290	Double gate transistor, method of manufacturing same, and system containing same A double gate transistor comprises a substrate (105, 905) and first and second electrically insulating layers (110, 910), (120, 920). The first and second electrically insulating layers form a fin (130, 930). A first gate dielectric (1...	08/19/2008
7396709	Semiconductor device and method for manufacturing the same A semiconductor device includes a thin film transistor including a semiconductor layer that includes a channel region, a source region and a drain region, a gate insulating film provided on the semiconductor layer, and a gate electrode for controlling the conductivi...	07/08/2008
7348641	Structure and method of making double-gated self-aligned finFET having gates of different lengths A gated semiconductor device is provided, in which the body has a first dimension extending in a lateral direction parallel to a major surface of a substrate, and second dimension extending in a direction at least substantially vertical and at least substantially pe...	03/25/2008
7348642	Fin-type field effect transistor Disclosed herein are improved fin-type field effect transistor (FinFET) structures and the associated methods of manufacturing the structures. In one embodiment FinFET drive current is optimized by configuring the FinFET asymmetrically to decrease fin resistance bet...	03/25/2008
7339241	FinFET structure with contacts A FinFET, which by its nature has both elevated source/drains and an elevated channel that are portions of an elevated semiconductor portion that has parallel fins and one source/drain on one side of the fins and another source/drain on the other side of the fins, h...	03/04/2008
7317230	Fin FET structure A fin FET structure employs a negative word line scheme. A gate electrode of a fin FET employs an electrode doped with n+ impurity, and a channel doping for a control of threshold voltage is not executed, or the channel doping is executed by a low density, thereby r...	01/08/2008
7304336	FinFET structure and method to make the same A multiple-gate FET structure includes a semiconductor substrate. A gate region is formed on the semiconductor substrate. The gate region comprises a gate portion and a channel portion. The gate portion has at least two opposite vertical surfaces adjacent to the cha...	12/04/2007
7262469	Semiconductor device and method for manufacturing the same A semiconductor device includes a thin film transistor including a semiconductor layer that includes a channel region, a source region and a drain region, a gate insulating film provided on the semiconductor layer, and a gate electrode for controlling the conductivi...	08/28/2007
7256455	Double gate semiconductor device having a metal gate A semiconductor device may include a substrate, an insulating layer formed on the substrate and a conductive fin formed on the insulating layer. The conductive fin may include a number of side surfaces and a top surface. The semiconductor device may also include a s...	08/14/2007
7198966	Electron-emitting device, electron source, image-forming apparatus, and method for producing electron-emitting device and electron-emitting apparatus A method for producing a durable electron-emitting device having a uniform electron emission characteristic, an electron source, and an image-forming apparatus having a uniform display characteristic for a long period are provided. The method for producing an electr...	04/03/2007
7138723	Deformable semiconductor device A semiconductor chip is secured in a state deformed into a substantially cylinder shape by a coating material formed on its surface. The deformed semiconductor chip is flip-chip connected to an interposer and sealed with sealing resin onto the interposer. Solder bal...	11/21/2006
7109515	Carbon containing tips with cylindrically symmetrical carbon containing expanded bases Systems and methods are described for carbon containing tips with cylindrically symmetrical carbon containing expanded bases. A method includes producing an expanded based carbon containing tip including: fabricating a carbon containing expanded base on a substrate;...	09/19/2006
6703684	Semiconductor device and method of forming a semiconductor device A power semiconductor device (10) has an active region that includes a drift region (20). At least a portion of the drift region (20) is provided in a membrane (16) which has opposed top and bottom surfaces (15,17). In one embodiment, the top surface (15)...	03/09/2004
6700178	Package of a chip with beveled edges A chip with beveled edges suitable for adhering onto a surface of a die pad by an adhesive material. The chip has an active surface and a corresponding back surface, wherein the active surface has beveled edges. The back surface of the chip is adhered ont...	03/02/2004
6693024	Semiconductor component with a semiconductor body having a multiplicity of pores and method for fabricating The semiconductor component is fabricated on the basis of a semiconductor body with a first and a second surface. A multiplicity of pores are formed in the semiconductor body. The pores extend into the semiconductor body proceeding from the first surface ...	02/17/2004
6692987	BOC BGA package for die with I-shaped bond pad layout Semiconductor die units for forming BOC BGA packages, methods of encapsulating a semiconductor die unit, a mold for use in the method, and resulting encapsulated packages are provided. In particular, the invention provides a semiconductor die unit compris...	02/17/2004
6686225	Method of separating semiconductor dies from a wafer Methods are disclosed for manufacturing semiconductor device dies and for separating dies from a semiconductor wafer, wherein one or more channels are etched in the top of the wafer between individual die areas. Material is then removed from the bottom si...	02/03/2004
6683663	Web fabrication of devices Apparatuses and methods for forming displays are claimed. One embodiment of the invention relates to forming an assembly using different sized blocks in either a flexible or rigid substrate....	01/27/2004
6677202	Power MOS device with increased channel width and process for forming same A power MOS device that has increased channel width comprises a semiconductor substrate and a doped upper layer of a first conduction type disposed on the substrate. The upper layer comprises a plurality of doped well regions of a second, opposite conduct...	01/13/2004
6657289	Apparatus relating to block configurations and fluidic self-assembly processes An apparatus and methods of making an electronic assembly. The electronic assembly comprises a functional block having at least one asymmetric feature. The functional block comprises an integrated circuitry to perform a function pertaining to the electron...	12/02/2003
6653720	Semiconductor electronic parts Semiconductor electronic parts 1 comprises electrode pads 7 formed on the surface of a base 2 and adapted to be connected to respective electrode terminals 4 and a bare chip 3 adhesive bonded to the surface of the base 2, wherein adhesive flow-in preventi...	11/25/2003
6653157	Manufacturing method for device including function block, and light transmitting device Device 100 of the present invention comprises function block 12. Function block 12 is formed in such a way that the function block 12 is fitted into concavity 11 which is disposed on base body 10, and function block 12 comprises optical element 14. Lens s...	11/25/2003
6646325	Semiconductor device having a step-like section on the back side of the substrate, and method for manufacturing the same A semiconductor device includes a semiconductor substrate having a first main surface having circuit elements formed thereon, a second main surface substantially opposite to the first main surface, and a plurality of side faces provided between the first ...	11/11/2003
6635945	Semiconductor device having element isolation structure A semiconductor device and process of forming the device are described. The process includes forming a pad oxide film on the circuit-forming side of a semiconductor substrate; forming an oxidation prevention film on the pad oxide film; removing the oxidat...	10/21/2003
6611002	Gallium nitride material devices and methods including backside vias The invention includes providing gallium nitride material devices having backside vias and methods to form the devices. The devices include a gallium nitride material formed over a substrate, such as silicon. The device also may include one or more non-co...	08/26/2003
6583512	Semiconductor device and method for fabricating the same In a semiconductor device functioning as a three-dimensional device composed of two semiconductor chips bonded to each other, the back surface of the upper semiconductor chip is polished, the entire side surfaces of the upper semiconductor chip are covere...	06/24/2003
6583451	Process for fabricating a network of nanometric lines made of single-crystal silicon and device obtained The process for fabricating a network of nanometric lines made of single-crystal silicon on an isolating substrate includes the production of a substrate comprising a silicon body having a lateral isolation defining a central part in the body. A recess is...	06/24/2003
6580154	Method and apparatus on (110) surfaces of silicon structures with conduction in the <110> direction Improved methods and structures are provided that are lateral to surfaces with a (110) crystal plane orientation such that an electrical current of such structures is conducted in the direction. Advantageously, improvements in hole carrier mobility ...	06/17/2003
6573591	Spherical semiconductor device and method of mounting the same on a substrate A semiconductor device in which electrical connection between a spherical semiconductor and a substrate can be reliably effected and a method of manufacturing such a semiconductor device. The spherical semiconductor includes contact pads that are treated ...	06/03/2003
6558977	Semiconductor device and method for fabricating the same In a semiconductor device functioning as a three-dimensional device composed of two semiconductor chips bonded to each other, the back surface of the upper semiconductor chip is polished, the entire side surfaces of the upper semiconductor chip are covere...	05/06/2003
6555440	Process for fabricating a top side pitted diode device A method of fabricating a diode device, such as a PIN diode, includes forming top and bottom regions of opposite conductivity types and includes anisotropically etching into the top surface to form a pit having side walls that converge with approach to th...	04/29/2003
6534845	Semiconductor device A semiconductor. device comprises a semiconductor chip on which a plurality of grooves are defined, thus acting as a resisting member, the effect of which is to prevent the semiconductor chip from bending. Consequently, the thickness of the lower portion ...	03/18/2003
6531760	Semiconductor device As the semiconductor chip is large-sized, highly integrated and speeded up, it becomes difficult to pack the semiconductor chip together with leads in a package. In view of this difficulty, there has been adopted the package structure called the "Lead-On-...	03/11/2003
6516808	Hermetic feedthrough for an implantable device The present invention provides an implantable substrate sensor comprising electronic circuitry formed within, or on, a substrate. A protective coating then covers the substrate, forming a hermetically sealed package having the circuitry under the coating....	02/11/2003
6515348	Semiconductor device with FET MESA structure and vertical contact electrodes A semiconductor device comprises one or more field effect devices (FD) having source and drain regions (5 and 6) spaced apart by a body region (3a). A gate structure (7a, 7b), preferably in a trench (4), controls a conduction channel in a portion (3b) of ...	02/04/2003
6515346	Microbar and method of its making A bar or pipe shape semiconductor-integrated-circuit ("microbar") and method for manufacturing the same. The microbar is substitute for common flat microchip. The shape and size of said microbar calls for novel manufacturing processes in special lathe, ho...	02/04/2003
6509645	Spherical semiconductor device and method for fabricating the same A spherical semiconductor device includes a spherical semiconductor element having one or more electrodes on its surface. Spherical conductive bumps are formed at the positions of the electrodes. The electrodes are so arranged as to contact a common plane...	01/21/2003
6476461	Arrangement of stacked, spherically-shaped semiconductors To provide a semiconductor device in which a plurality of spherical members are easily stacked at predetermined positions, with at least one of the spherical members being formed of a semiconductor material and having a semiconductor element or wiring for...	11/05/2002
6472729	Semiconductor device A semiconductor device chip packaged in the semiconductor device in accordance with this invention has one or more grooves engraved along the rear surface thereof to allow the grooves to receive one or more connection bars and a die pad or an island, if a...	10/29/2002
6437422	Active devices using threads Active devices that have either a thread or a ribbon geometry. The thread geometry includes single thread active devices and multiple thread devices. Single thread devices have a central core that may contain different materials depending upon whether the...	08/20/2002

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Class 257/E29.022 - Characterized by shape of semiconductor body (EPO)