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A forehead support apparatus for resting a standing users forehead against a wall above a bathroom commode or urinal or beneath a showerhead.
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| Number | Title | Issue Date |
| 7432522 | Nanowhiskers with pn junctions, doped nanowhiskers, and methods for preparing them Nano-engineered structures are disclosed, incorporating nanowhiskers of high mobility conductivity and incorporating pn junctions. In one embodiment, a nanowhisker of a first semiconducting material has a first band gap, and an enclosure comprising at least one seco... | 10/07/2008 |
| 7423332 | Vertical laminated electrical switch circuit A vertical laminated electrical switch circuit includes a first, second, and third ceramic substrate positioned in juxtaposed relationship relative to each other. The circuit also includes a first and second electrical device electrically coupled to each other. The ... | 09/09/2008 |
| 7358593 | Microfabricated miniature grids A grid structure and method for manufacturing the same. The grid is used for gating a stream of charged particles in certain types of particle measurement instruments, such as ion mobility spectrometers and the like. The methods include various microfabrication tech... | 04/15/2008 |
| 7329928 | Voltage compensated integrated circuits A method and system of voltage compensated integrated circuits. Operating characteristics of integrated circuitry are enhanced by application of voltage compensation. ... | 02/12/2008 |
| 7330369 | NANO-electronic memory array Systems and methods are disclosed to process a semiconductor substrate by fabricating a first layer on the substrate using semiconductor fabrication techniques; fabricating a second layer above the first layer having one or more NANO-bonding areas; self-assemblying ... | 02/12/2008 |
| 7202548 | Embedded capacitor with interdigitated structure An embedded capacitors with interdigitated structure for a package carrier or a printed circuit board comprises a plurality of stacked conductive layers, at least one first via connecting structure and at least one second via connecting structure. In order to enhanc... | 04/10/2007 |
| 7187055 | Rectifying charge storage element An electronic device or signal processing device consists of a rectifier and capacitor which share common elements facilitating the construction and application of the device to various types of substrates and, particularly, flexible substrates. Components of the de... | 03/06/2007 |
| 7161228 | Three-dimensional integrated capacitance structure A three-dimensional integrated capacitance structure comprises at least two arrays of “unit cells” on respective layers of an IC, with each unit cell comprising a center conductor and a conducting ring which surrounds the center conductor. Each array comprises a... | 01/09/2007 |
| 7102204 | Integrated SOI fingered decoupling capacitor The invention provides a fingered decoupling capacitor in the bulk silicon region that are formed by etching a series of minimum or sub-minimum trenches in the bulk silicon region, oxidizing these trenches, removing the oxide from at least one or more disjoint trenc... | 09/05/2006 |
| 6677629 | Electric or electronic component and application as non volatile memory and device with surface acoustic waves The invention concerns a component of composite structure (10) consisting of a layer of ferroelectric material (11) and at least a thin film of semiconductor material or of a thin metal or supraconducting film (12) in close contact with the layer of ferro... | 01/13/2004 |
| 5939764 | Direct current voltage transformer The DC transformer includes structure having a high mobility, two-dimensional electron gas contained within a plane therein. A magnetic field is maintained normal to the electron gas plane and the transformer structure is kept at a cryogenic temperature. ... | 08/17/1999 |
| 4021751 | Field effect transistor amplifier A field effect transistor amplifier has a signal input circuit which preferably includes an A-class amplifier, a driving stage having first and second FETs driven in the same phase relation by an input signal applied to their gate electrodes from the sign... | 05/03/1977 |
