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An armor with rollers is provided that enables a user to move in all positions by rolling on a hard and smooth surface while constantly varying his bearing points on the ground.
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| Number | Title | Issue Date |
| 7436071 | Electronic component and semiconductor device, method of fabricating the same, circuit board mounted with the same, and electronic appliance comprising the circuit board An integrated type semiconductor device that is capable of reducing cost or improving the reliability of connecting semiconductor chips together or chips to a circuit board. One embodiment of such an integrated type semiconductor device comprises a first semiconduct... | 10/14/2008 |
| 7432599 | Memory module having interconnected and stacked integrated circuits A multi-chip memory module may be formed including two or more stacked integrated circuits mounted to a substrate or lead frame structure. The memory module may include means to couple one or more of the stacked integrated circuits to edge conductors in a memory car... | 10/07/2008 |
| 7417293 | Image sensor packaging structure An image sensor module includes a first substrate, a second substrate provided over the first substrate, an image sensor device for receiving an image signal flip-chip bonded to the second substrate, and a semiconductor device for processing the image signal from th... | 08/26/2008 |
| 7413928 | Die-wafer package and method of fabricating same A die-wafer package includes a singulated semiconductor die having a first plurality of bond pads on a first surface and a second plurality of bond pads on a second opposing surface thereof. Each of the first and second pluralities of bond pads includes an under-bum... | 08/19/2008 |
| 7400047 | Integrated circuit with stacked-die configuration utilizing substrate conduction An integrated circuit comprises a plurality of integrated circuit die arranged in a stack, with a given die other than a top die of the stack carrying current for itself and at least one additional die of the stack via substrate conduction. In one arrangement, each ... | 07/15/2008 |
| 7378331 | Methods of vertically stacking wafers using porous silicon A method and article to provide a three-dimensional (3-D) IC wafer process flow. In some embodiments, the method and article include bonding a device layer of a multilayer wafer to a device layer of another multilayer wafer to form a bonded pair of device layers, ea... | 05/27/2008 |
| 7335533 | Methods for assembling semiconductor devices in superimposed relation with adhesive material defining the distance adjacent semiconductor devices are spaced apart from one another A method for assembling semiconductor devices includes providing a first semiconductor device, applying a predetermined volume of adhesive material to at least a surface of the first semiconductor device, and positioning a second semiconductor device adjacent to the... | 02/26/2008 |
| 7332372 | Methods for forming assemblies and packages that include stacked semiconductor devices separated a distance defined by adhesive material interposed therebetween A method for assembling semiconductor devices includes providing a first semiconductor device, applying a volume of adhesive material to at least a surface of the first semiconductor device, and positioning a second semiconductor device over the first semiconductor ... | 02/19/2008 |
| 7327038 | Semiconductor device package Provided is a semiconductor device package in which instability of a bonding wire that may occur when a plurality of semiconductor chips are stacked is prevented and which obtains a light, thin and small structure. The semiconductor device package includes a substra... | 02/05/2008 |
| 7291927 | Dual chips stacked packaging structure A dual chips stacked packaging structure. A first chip comprises an active surface and an opposing non-active surface, the active surface consisting of a central area and a peripheral area having a plurality of first bonding pads. A lead frame comprises a plurality ... | 11/06/2007 |
| 7285864 | Stack MCP A semiconductor chip having an adhesive layer previously formed on an element forming surface thereof and having a bump exposed from the surface of the adhesive layer is wire-bonded to a printed circuit board. Another semiconductor chip is stacked on the above semic... | 10/23/2007 |
| 7276793 | Semiconductor device and semiconductor module A semiconductor device is provided wherein conductive paths 40, formed of crystal that grows better along the X-Y axis than along the Z axis, are embedded in an insulating resin 44, and the back surface of the conductive path 40 is exposed throu... | 10/02/2007 |
| 7196425 | Copper interposer for reducing warping of integrated circuit packages and method of making IC packages A stacked die integrated circuit assembly comprising: 1) a substrate; 2) a first integrated circuit die mounted on the substrate; 3) a copper interposer mounted on the first integrated circuit die; and 4) a second integrated circuit die mounted on the copper interpo... | 03/27/2007 |
| 7129111 | Method for forming bump protective collars on a bumped wafer A method of forming bump protective collars is disclosed. A wafer has an active surface with a plurality of bonding pads and a passivation layer. A plurality of reflowed bumps are formed over the bonding pads. A photoresist is coated on the active surface. Using the... | 10/31/2006 |
| 7119445 | Electronic component and semiconductor device, method of fabricating the same, circuit board mounted with the same, and electronic appliance comprising the circuit board An integrated type semiconductor device that is capable of reducing cost or improving the reliability of connecting semiconductor chips together or chips to a circuit board. One embodiment of such an integrated type semiconductor device comprises a first semiconduct... | 10/10/2006 |
| 6433326 | CMOS/CCD line transfer imager with low dark current A method and apparatus for low light imaging in which a plurality of relatively small detectors forming a line is coupled to a respective cell of a CCD register. A charge indicative of detected image information is provided to the respective cells after t... | 08/13/2002 |
| 6028323 | Quantum well infared image conversion panel and associated methods A method for infrared (IR) imaging using a panel made of integrated GaAs quantum well infrared photodetector (QWIP) and near-infrared (NIR) or visible light emitting diode (LED). The panel is a large area diode with an optical window for top illumination ... | 02/22/2000 |
| 5652150 | Hybrid CCD imaging A preferred embodiment of this invention is a hybrid semiconductor imaging structure comprising a high speed signal conditioning substrate (e.g. Si 12) and an imaging substrate (e.g. HgCdTe 10) mounted on the conditioning substrate using an adhesive layer... | 07/29/1997 |
| 5543641 | Hybrid signal conditioning/infared imaging structure A preferred embodiment of this invention is a hybrid semiconductor imaging structure comprising a high speed signal conditioning substrate (e.g. Si 12) and an imaging substrate (e.g. HgCdTe 10) mounted on the conditioning substrate using an adhesive layer... | 08/06/1996 |
| 5466331 | Elevated thin film for ceramic materials A novel reticulated array comprises islands of ceramic (e.g. BST 20) which are fabricated from novel materials using unique methods of patterning. Trenches (22) are formed in the ceramic substrate from the front side and filled with a filler material (e.g... | 11/14/1995 |
| 5449908 | Hybrid CCD imaging A hybrid semiconductor imaging structure comprising a high speed signal conditioning substrate (e.g. Si 12) and an imaging substrate (e.g. HgCdTe 10) mounted on the conditioning substrate using an adhesive layer (e.g. epoxy 31). Infrared-sensitive time de... | 09/12/1995 |
| 5283438 | Monolithic infrared detector with pyroelectric material Infrared detectors whose detecting part consists of a layer of pyroelectric material deposited on a semiconductive substrate are disclosed. The object is to facilitate the polarization of the layer of pyroelectric material after it is deposited on the sem... | 02/01/1994 |
| 5146302 | Charge skimming solid-state imaging device including sampling circuits A solid-state imaging device utilizing a charge skimming transfer system includes a sampling circuit for each of a plurality of pixels for detecting a quantity of signal charge light-electricity converted by the respective pixels and outputs a voltage lev... | 09/08/1992 |
| 5115295 | Photodetector device A photodetector device of a rear surface incident type includes a semi-insulating substrate transparent to light incident from the rear surface, a plurality of second conductivity type semiconductor regions disposed on the substrate in a first conductivit... | 05/19/1992 |
| 5093589 | Charge injection circuit having impedance conversion means A charge injection circuit for injecting a charge to a signal processing circuit has a photo-voltaic element for generating a photocurrent when an infrared light is received, a field effect transistor used for injecting the charge to the signal processing... | 03/03/1992 |
| 5034608 | Infrared sensor operable without cooling An infrared sensor operable without cooling and thus usable at room temperature comprises a substrate supporting thin films of pyroelectric material and switched capacitor control circuitry. The control circuitry compares the absolute capacitance of a ref... | 07/23/1991 |
| 5008544 | System for the detection of information in the form of electromagnetic radiation and reading the detected information It comprises information photodetection means (2), which have N photodetectors (6), each photodetector being able to supply a current having an information-carrying component and a non-information carrying component, N being an integer at least equal to 1... | 04/16/1991 |
| 4990988 | Laterally stacked Schottky diodes for infrared sensor applications Laterally stacked Schottky diodes (25) for infrared sensor applications are fabricated utilizing porous silicon (10) having pores (12). A Schottky metal contact (24) is formed in the pores, such as by electroplating. The sensors may be integrated with sil... | 02/05/1991 |
| 4978872 | Integrating capactively coupled transimpedance amplifier An amplifier circuit 12 for an infrared detector 10 in a detector array formed on a large-scale integrated structure. The amplifier circuit is fabricated along with the detector on the structure and includes an amplifier stage capacitively coupled 14 to t... | 12/18/1990 |
| 4956687 | Backside contact blocked impurity band detector A blocked impurity band detector having a high fill factor is comprised of a radiation detecting layer and an overlying blocking layer which are interposed between a plurality of rear contact regions and a frontside common electrical contact layer. Dispos... | 09/11/1990 |
| 4896340 | Partial direct injection for signal processing system An interface structure (14) for an hybrid infrared charge coupled device (10) or other signal processing system provides for partial direct injection of the output current of an incorporated detector (12) or other signal source into the incorporated CCD (... | 01/23/1990 |
| 4866496 | Charger transfer device (CTD), eliminating the background level of a detected signal, detection structure and method of using such a CTD A charge transfer device (CTD) eliminating the background level of a detected signal provided with an input circuit comprising an injection source (12) and an electrode (16) controlling a storage potential well, which can be subdivided into an evacuation ... | 09/12/1989 |
| 4812668 | Multiplexer elements for photovoltaic detectors A multiplexer cell particularly adapted for multiplexing the output signals of photovoltaic detectors and which when appropriately connected together form a random access multiplexer for the photovoltaic detectors located in a large focal plane of a photo... | 03/14/1989 |
| 4807000 | High density small element optical mosaic detector A high density optical detector mosaic array assembly having a plurality of interconnect locations comprised of IC readout pads in a pattern suitable for interconnecting a plurality of integrated circuit devices. The assembly comprises a substrate, a plur... | 02/21/1989 |
| 4801991 | Semiconductor light receiving device A semiconductor light receiving device comprising: a light receiving section obtained by arranging a plurality of light receiving elements having pn junctions in an array on a semiconductor substrate; a signal taking out section for taking out an electric... | 01/31/1989 |
| 4786831 | Integrating capacitively coupled transimpedance amplifier An amplifier circuit 12 for an infrared detector 10 in a detector array formed on a large-scale integrated structure. The amplifier circuit is fabricated along with the detector on the structure and includes an amplifier stage capacitively coupled 14 to t... | 11/22/1988 |
| 4786809 | Low noise preamplification stage A preamplifier circuit provides a low noise, low power buffer preamplification stage for interfacing low output impedance, low noise sensors to a readout circuit at cryogenic temperatures. The preamplifier circuit may be formed of discrete components, or ... | 11/22/1988 |
| 4758741 | Photosensitive device ensuring an anti-blooming effect Each integration cell is surrounded by means imposing, at least during the charge integration time, a given surface potential. The detectors and integration cells are integrated onto semiconductor substrates receiving different biasing voltages and such t... | 07/19/1988 |
| 4754139 | Uncooled high resolution infrared imaging plane A two-dimensional infrared focal plane employing a uniquely configured detector array for reducing the thermal conductance between detectors and between each detector and its environment to enhance signal-to-noise and spacial resolution without requiring ... | 06/28/1988 |
| 4737642 | Arrangement for multispectral imaging of objects, preferably targets An arrangement for the multispectral imaging of objects, preferably targets, including an optical system for imaging the object dots of the objects on at least one charge-coupled semiconductor element, with each charge-coupled semiconductor element includ... | 04/12/1988 |
