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| Number | Title | Issue Date |
| 5900654 | Radiation hardened charge coupled device A structure and method is described for fabricating a nuclear radiation induced damage resistant P-type buried channel charge-coupled device (P-BCD) which converts an optical image focused thereon into a time varying electrical signal. The invention uses ... | 05/04/1999 |
| 5386128 | Monolithic in-based III-V compound semiconductor focal plane array cell with single stage CCD output A monolithic semiconductor imager includes an indium-based III-V compound semiconductor monolithic active layer of a first conductivity type, an array of plural focal plane cells on the active layer, each of the focal plane cells including a photogate ove... | 01/31/1995 |
| 5326996 | Charge skimming and variable integration time in focal plane arrays Methods and apparatus for implementing charge skimming and variable integration time in focal plane arrays formed in a silicon substrate. The present invention provides for pulsing a field plate that lies over a diode disposed in the substrate in order to... | 07/05/1994 |
| 5283438 | Monolithic infrared detector with pyroelectric material Infrared detectors whose detecting part consists of a layer of pyroelectric material deposited on a semiconductive substrate are disclosed. The object is to facilitate the polarization of the layer of pyroelectric material after it is deposited on the sem... | 02/01/1994 |
| 5274263 | FET structure for use in narrow bandgap semiconductors A FET structure for use in narrow bandgap semiconductors comprising a narrow bandgap semiconductor substrate 24, an implanted source region 12 of a conductivity type opposite that of the substrate 24, an implanted drain region 12 of the same conductivity ... | 12/28/1993 |
| 5268583 | Homogenizing electrical signals generated by a detection system and transmitted to an exploiting system An exploiting or readout circuit for a linear or matrix type photodetector array is of the multiplex type, such as a charge-coupled device (CCD). The exploiting circuit has a number of input stages corresponding to the number of photodetectors or similar ... | 12/07/1993 |
| 5252509 | CCD imager responsive to long wavelength radiation An infrared or x-ray imaging CCD array, including deep trench isolation (56) for capturing electron carriers formed deep in the substrate (46) as a result of long wavelength radiation or high energy particles. In virtual phase CCD circuits, the trench has... | 10/12/1993 |
| 5171994 | Infrared staring imaging array Monolithic InSb array devices are described for staring infrared imaging systems operating in the 3-5 μm spectral region. These devices are fabricated with only 4 mask levels compared to 5 mask levels for prior devices and have higher output dynamic rang... | 12/15/1992 |
| 5159419 | CCD imager responsive to long wavelength radiation An infrared or x-ray imaging CCD array, including deep trench isolation (56) for capturing electron carriers formed deep in the substrate (46) as a result of long wavelength radiation or high energy particles. In virtual phase CCD circuits, the trench has... | 10/27/1992 |
| 5155362 | Infra-red radiation imaging device arrangements An imaging device arrangement comprises infra-red radiation detector elements (10) and signal-processing circuitry including at least one charge-transfer line (30). The detector elements (10) are preferably cadmium mercury telluride photodiodes formed in ... | 10/13/1992 |
| 5130259 | Infrared staring imaging array and method of manufacture Monolithic InSb array devices are described for staring infrared imaging systems operating in the 3-5 μm spectral region. These devices are fabricated with only 4 mask levels compared to 5 mask levels for prior devices and have higher output dynamic rang... | 07/14/1992 |
| 5095211 | Infrared image sensor and image pick-up apparatus using the same An infrared image sensor includes a plurality of Schottky type infrared detecting elements (8) arranged in array formed on one main surface of a semiconductor substrate (1a) or in a vicinity of the one main surface to allow incident infrared rays from the... | 03/10/1992 |
| 5041890 | Pre-processing wafer for the output currents of detection diodes subjected to thermal radiation A wafer is provided for pre-processing the output currents of detection diodes subjected to thermal radiation, comprising an input stage for integrating the output currents of the diodes and an output stage delivering a signal related the incident radiati... | 08/20/1991 |
| 5023685 | Quantum-well radiation-interactive device, and methods of radiation detection and modulation Electromagnetic radiation such as, in particular, infrared radiation is detected opto-electronically by means of a superlattice structure forming quantum wells having a single bound state; in the interest of minimizing dark-current, relatively wide barrie... | 06/11/1991 |
| 5003364 | Detector having a radiation sensitive surface The invention relates to CCD Si detector configuration with a semiconductor sensibilizator. The spectral range of the detectors extends from 0.4 μm to 1.6 μm. The CCD Si detector configuration is produced as integrated structure so that a large picture ... | 03/26/1991 |
| 5001530 | Infrared Schottky junction charge coupled device A Schottky barrier CCD infra-red (IR) detector array having Schottky junction IR sensitive gates as the transfer gates of the CCD array. These Schottky gates perform both IR detection and CCD shift register function within the array, thereby improving the... | 03/19/1991 |
| 4972245 | Infrared detecting element An intermediate layer made of an Si1-X GeX mixed crystal layer is formed on an Si crystal substrate, where the character X denotes a value in the range of 0 to 1. The intermediate layer is connected to the substrate via a heterojunct... | 11/20/1990 |
| 4952995 | Infrared imager An infrared imager (10) is disclosed for sensing infrared radiation. The imager (10) comprises a detection layer (14) of semiconductor material which is operable to detect the occurrence of infrared radiation and generate free charge carriers in response ... | 08/28/1990 |
| 4894701 | Semiconductor device detector and method of forming same A semiconductor device and method of making the device in which portions of the device may be completed prior to forming the detector region. The device comprises a substrate, a first insulating layer over the substrate, a first level semiconductor layer ... | 01/16/1990 |
| 4876586 | Grooved Schottky barrier photodiode for infrared sensing A sensor optimized for detecting infrared radiation is formed by a Schottky barrier photodiode having a corrugated upper surface upon which a thin layer of metal silicide is deposited. The corrugated surface is formed by selective etching of a (100) silic... | 10/24/1989 |
| 4866497 | Infra-red charge-coupled device image sensor An infra-red charge-coupled device (IR-CCD) image sensor includes a substrate of single crystalline silicon having at one surface thereof a plurality of detectors arranged in space relation along a plurality of columns and a separate charge-coupled device... | 09/12/1989 |
| 4831428 | Infrared ray detection device An infrared ray detection device comprises a Si crystal substrate, a Gex Si1-x (0 | 05/16/1989 |
| 4826312 | Large area, low capacitance photodiode and range finder device using same An infrared sensitive photodiode having a relatively large optically active area and relatively low capacitance comprises a stripe diode adjacent an optically active area having a thick infrared transparent field oxide over a lightly doped channel stop. T... | 05/02/1989 |
| 4782028 | Process methodology for two-sided fabrication of devices on thinned silicon A method is disclosed for forming a detector device, such as a thinned bulk silicon blocked impurity transducer infrared detector, by thinning a semiconductor substrate (10) and processing the thinned region (30) on two sides to form the detector device. ... | 11/01/1988 |
| 4780605 | Coherent light phase detecting focal plane charge-transfer-device A coherent light phase detecting focal plane array uses a bulk substrate of a first conductivity-type semiconductor, with a layer of the opposite conductivity-type of that semiconductor formed into an array of CTD cells each storing charge converted from ... | 10/25/1988 |
| 4774557 | Back-illuminated semiconductor imager with charge transfer devices in front surface well structure An imager includes a substrate of single crystalline silicon of one conductivity type having opposed major surfaces. A Schottky-barrier detector junction is along one of the major surfaces for converting detected radiation to charge carriers. An array of ... | 09/27/1988 |
| 4749659 | Method of manufacturing an infrared-sensitive charge coupled device A charge coupled device (CCD) sensitive to infrared radiation composed of a succession of three layers of Group III-V semiconductor material. The layers are a window layer, a sensitive layer and a storage layer. The layers are fixed to a supporting plate ... | 06/07/1988 |
| 4737642 | Arrangement for multispectral imaging of objects, preferably targets An arrangement for the multispectral imaging of objects, preferably targets, including an optical system for imaging the object dots of the objects on at least one charge-coupled semiconductor element, with each charge-coupled semiconductor element includ... | 04/12/1988 |
| 4708436 | Optical imager with diffractive lenticular array An optical imager includes a sensor and a diffraction lenticular array. The sensor includes a substrate of a semiconductor material having a pair of opposed major surfaces and a plurality of photodetectors arranged in a plurality of columns along one of t... | 11/24/1987 |
| 4709381 | CCD focal plane array convolver A semiconductor CCD focal plane array convolver is taught which permits performing convolution functions on the focal plane array chip. An X-Y array of photosensitive pixels is disposed in a semiconductive substrate, with a CCD roadway comprising a patter... | 11/24/1987 |
| 4681440 | High-sensitivity CID photometer/radiometer A high-sensitivity photometer/radiometer uses a single-pixel charge-injection-device (CID) light-sensitive sensor, and associated circuitry for: non-destructively reading-out the sensor charge level; for summing signals proportional to the charge level si... | 07/21/1987 |
| 4672412 | High fill-factor ac-coupled x-y addressable Schottky photodiode array Each unit cell of a Schottky barrier photodiode imaging array comprises a Schottky metal electrode formed on a silicon substrate. The Schottky electrode is reverse biased with a pulse for beginning a sensing interval, following which the change in charge ... | 06/09/1987 |
| 4667213 | Charge-coupled device channel structure A buried-channel charge-coupled device includes a substrate of semiconductor material of one conductivity type having therein and along a surface thereof a major channel region of the opposite conductivity type and at least one supplemental channel region... | 05/19/1987 |
| 4656519 | Back-illuminated CCD imagers of interline transfer type Back-illuminated CCD imagers of interline transfer type are made possible by deep, highly doped implant regions which bury the CCDs with respect to the back-illuminated surfaces of the imager substrates. Transfer smear caused by photoconversion in the CCD... | 04/07/1987 |
| 4652766 | Direct coupled charge injection readout circuit and readout method for an IR sensing charge injection device The invention relates to an improved readout circuit and readout method for an IR sensing array. The invention, given a limited time interval for reading out the signal from a sensor element in an array of sensor elements, permits a longer time to be devo... | 03/24/1987 |
| 4652901 | Infrared sensitive silicon substrate with integrated electronic processing devices and method for producing same An integrated circuit arrangement including an infrared sensitive silicon substrate having an epitaxial layer with integrated electronic processing devices applied to the major surface thereof, wherein the epitaxial layer is partially etched away to expos... | 03/24/1987 |
| 4651001 | Visible/infrared imaging device with stacked cell structure A solid-state image sensing device such as an IT-CCD has first and second photosensing sections which are stacked so that they separately sense visible and infrared image light components contained in input light. The visible image light component contain... | 03/17/1987 |
| 4638345 | IR imaging array and method of making same An array of infra-red (IR) detectors for a CCD image sensor includes a plurality of spaced areas of a conductive material at the surface of a substrate of semiconductor material of one conductivity type with each conductive area forming a Schottky-barrier... | 01/20/1987 |
| 4620231 | CCD imager with photodetector bias introduced via the CCD register An infrared charge-coupled-device (IR-CCD) imager uses an array of Schottky-barrier diodes (SBD's) as photosensing elements and uses a charge-coupled-device (CCD) for arranging charge samples supplied in parallel from the array of SBD's into a succession ... | 10/28/1986 |
| 4596930 | Arrangement for multispectal imaging of objects, preferably targets An arrangement for the multispectral imaging of objects, preferably targets, including an optical system for imaging the object dots of the objects on at least one charge-coupled semiconductor element, with each charge-coupled semiconductor element includ... | 06/24/1986 |
