Class 257/E27.156 - Interline transfer (EPO)

Subclass of Class 257 - Active solid-state devices (e.g., transistors, solid-state diodes)
Definition: This subclass is indented under subclass E27.154. This
No. of patents: 20
Last issue date: 06/17/2008

Number	Title	Issue Date
7388239	Frame shutter pixel with an isolated storage node A frame shutter type device provides a separated well in which the storage node is located. The storage node is also shielded by a light shield to prevent photoelectric conversion. ...	06/17/2008
6690049	Solid-state image sensor, production method of the same, and digital camera The present invention provides a solid-state image sensor wherein the color shading is decreased, and/or a solid-state image sensor wherein the shading effect is outstanding. Moreover, the invention provides a digital camera having the solid-state image s...	02/10/2004
6665013	Active pixel sensor having intra-pixel charge transfer with analog-to-digital converter An imaging device formed as a monolithic complementary metal oxide semiconductor integrated circuit in an industry standard complementary metal oxide semiconductor process, the integrated circuit including a focal plane array of pixel cells, each one of t...	12/16/2003
5912482	Solid-state image pickup device capable of reducing fixed pattern noise and preventing smear In a solid-state image pickup device having photoelectric converting sections, vertical charge transfer sections, and a horizontal charge transfer section, the vertical charge transfer sections include first, second, and third vertical charge transfer ele...	06/15/1999
5895944	Charge coupled device image sensor and method of driving the same There is provided an imager sensor including a semiconductor substrate, a plurality of photodiode regions arranged on the semiconductor substrate in row and column directions, a plurality of charge transfer regions each disposed at a space between the pho...	04/20/1999
5828091	Interline charge coupled device solid state image sensor The present invention provides an interline solid state image sensor comprising the following elements. A plurality of vertical charge coupled device resistors are provided, each of which extends in a vertical direction. The vertical charge coupled device...	10/27/1998
5825840	Interline sensor employing photocapacitor gate An interline sensor is constructed using photocapacitors. The vertical shift register of the interline sensor is operated in a uniphase mode, i.e., holding one of the two phase (Ø2) at a D.C. potential while fluctuating the other phase (Ø1) between a vo...	10/20/1998
5814810	Interline sensor employing photocapacitor gate An interline sensor is constructed using photocapacitors. The vertical shift register of the interline sensor is operated in a uniphase mode, i.e., holding one of the two phase ($c;2) at a D.C. potential while fluctuating the other phase ($c;1) betw...	09/29/1998
5774182	Solid-state image sensor device with pixel array structure of interline transfer CCD image sensor The solid-state image sensor device includes a photodiode section having a storage region of a second conductivity type and a surface layer of a first conductivity type, a vertical CCD register having a buried layer of the second conductivity type and a p...	06/30/1998
5747788	Solid state image sensor with reinforced fringe electric field at its charge transfer section The solid state image sensor disclosed includes a photoelectric conversion section, a vertical charge transfer section, a horizontal charge transfer section and an output section. The horizontal charge transfer section has an electric field reinforcing re...	05/05/1998
5742081	Charge transfer image pickup device A charge transfer image pickup device is disclosed. One embodiment of the device includes a plurality of photoelectric conversion elements for producing signal charges in response to light applied thereto. A vertical charge transfer part including a first...	04/21/1998
5488239	Solid state image sensor with shaped photodiodes A solid state image sensor including (a) a plurality of photodiodes arranged such that the photodiodes in odd number columns and the photodiodes in even number columns straddle each other, for generating image signal charges by converting light signals in...	01/30/1996
5250798	Solid state image sensor device with microlenses A solid state image sensor device has a semiconductor substrate, picture elements arranged on the semiconductor substrate in a matrix, and microlenses. Each microlens is arranged with a plurality of single-layer microlens parts on each picture element for...	10/05/1993
4774557	Back-illuminated semiconductor imager with charge transfer devices in front surface well structure An imager includes a substrate of single crystalline silicon of one conductivity type having opposed major surfaces. A Schottky-barrier detector junction is along one of the major surfaces for converting detected radiation to charge carriers. An array of ...	09/27/1988
4651001	Visible/infrared imaging device with stacked cell structure A solid-state image sensing device such as an IT-CCD has first and second photosensing sections which are stacked so that they separately sense visible and infrared image light components contained in input light. The visible image light component contain...	03/17/1987
4612580	TDM-input electrometer, as in a line transfer CCD imager, using a charge funnel A tendency towards uneven delays in raster scan lines is characteristic of known CCD imagers of line transfer type. This tendency arises owing to a line register being used for the time-division-multiplex selection of rows of charge packets sampling lines...	09/16/1986
4607286	Removal of line selection artifacts from trace portions of line transfer CCD imager video output signals There is electrostatic coupling of the forward clocking signals used in a CCD imager of line transfer type to the underlying bulk semiconductor and then to the output charge sensing stage. Changes in forward clocking signal application during the line sel...	08/19/1986
4477835	Charge transfer photosensitive device A charge transfer photosensitive device, having a plurality of photosensitive zones (20) fabricated on a single conducting substrate, and having N lines and M columns, and insulated from one another. In the photosensitive zones electrical charges are crea...	10/16/1984
4375597	Method of implementing uniform background charge subtraction in a radiation sensing array Uniform background charge subtraction in a radiation sensing array is realized by removing the background charge from the array detectors several times during each array integration time. Radiation sensing arrays of the type to which the method of the inv...	03/01/1983
4242694	Solid-state color imaging device A solid-state color imaging device contains semiconductive photoelectric elements for light of the respective primary colors, and means for sequentially transmitting charges as electric signals, the charges having been generated and stored according to th...	12/30/1980

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Class 257/E27.156 - Interline transfer (EPO)