Did You Know...
...that while attempting to develop a super strong glue, 3M employee Spencer Silver accidentally developed a glue that was so weak it would barely hold two pieces of paper together? However, his colleague Art Fry needed the glue. Fry sang with his church choir and marked the pages of his hymnal with small scraps of paper that often fell out. He used Silver's glue to hold the papers in place. Today we call this invention Post-it Notes.
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| Number | Title | Issue Date |
| 7239003 | Isolation techniques for reducing dark current in CMOS image sensors Isolation methods and devices for isolating regions of a semiconductor device. The isolation method and structure include forming an isolating trench in an active area and filling the trench with a doped conductive material containing silicon. Suitable conductive ma... | 07/03/2007 |
| 6621109 | Charge coupled device with split channeled HCCD A charge coupled device includes a plurality of photoelectric conversion regions; a plurality of vertical charge coupled devices (VCCDs) provided between the photoelectric conversion regions for transmission of charges generated at the photoelectric conve... | 09/16/2003 |
| 6366322 | Horizontal charge coupled device of CCD image sensor The present invention relates to a HCCD of a CCD image sensor comprising a channel stop region, a BCCD channel formed on the channel stop region, a plurality of first poly gates and a plurality of second poly gates formed on the BCCD channel and alternate... | 04/02/2002 |
| 6314196 | Fingerprint registering method and fingerprint checking device The present invention can achieve the reliability and simplicity in registering a fingerprint by indicating the quality of a fingerprint image by the number of pseudo minutiae, improve the security of an entrance/exit control system to register a fingerpr... | 11/06/2001 |
| 6256065 | Solid state image pickup device Solid state image pickup device in which a horizontal charge coupled device (HCCD) region is divided into multi-channels so as to improve efficiency of charge-transferring and to widen its dynamic range is disclosed, including a plurality of photoelectric... | 07/03/2001 |
| 6118143 | Solid state image sensor A solid state image sensor includes a photodiode, a vertical charge coupled device positioned to a side of the photodiode for transmitting charges generated in the photodiode, a first polygate extending in a horizontal direction and partly overlapping the... | 09/12/2000 |
| 6043523 | Charge coupled device and method of fabricating the same A charge coupled device is disclosed including: a well formed in a substrate, the well having a conductivity opposite to that of the substrate; a first conductivity type of BCCD region formed on the well; a first lightly doped impurity region formed in a ... | 03/28/2000 |
| 6034366 | Color linear CCD image device and driving method A color linear CCD for a pickup apparatus comprises a photodiode array including a blue-sensing photodiode array formed between a red-sensing photodiode array and a green-sensing photodiode array. A storage area is located beside of the red-sensing photod... | 03/07/2000 |
| 6002497 | Three-line linear sensor In a three-line linear sensor, a first linear sensor (10) without electronic shutter structure and second and third linear sensors (20), (30) with electronic shutter structures (28), (38) being disposed in an axial symmetry fashion are combined and a line... | 12/14/1999 |
| 5998815 | CCD linear sensor The present invention intends to improve a difference between signal levels of odd-numbered pixels and even-numbered pixels in a CCD (charge coupled device) linear sensor. In a CCD linear sensor comprising a sensor region (1) having an array of a pluralit... | 12/07/1999 |
| 5869853 | Linear charge-coupled device having improved charge transferring characteristics A linear CCD (charge-coupled device) including: a photodiode-array having a plurality of photodiodes for converting incident light plural charges, respectively; and a charge transfer part for transferring the charges of the photodiodes during a first phas... | 02/09/1999 |
| 5858812 | Method for fabricating interline-transfer CCD image sensor A solid-state image sensor has a photodiode region, a vertical CCD register for transferring a charge received at the photodiode region, a read-out gate region for reading the charge out to the vertical CCD register, and an element isolation region for is... | 01/12/1999 |
| 5821574 | Charge-coupled device having different light-receiving region and charge isolation layer structures A charge-coupled device includes a first P-type well formed in an N-type semiconductor substrate, a second P-type well formed repeatedly the first P-type well region, a charge-transfer region (BCCD) formed within the second P-type well region, an N-type p... | 10/13/1998 |
| 5786607 | Solid-state image pick-up device and method for manufacturing the same A solid-state image pick-up device having a structure in which the amount of transferred charges is not reduced in a vertical CCD portion even if a pixel portion is made finer, and a method for manufacturing the solid-state image pick-up device are provid... | 07/28/1998 |
| 5773324 | Bidirectional horizontal charge transfer device and method A bidirectional horizontal charge transfer device and method includes a charge transfer area formed within a substrate, a plurality of first, second, third and fourth poly gates formed over the charge transfer area, an insulating layer formed between the ... | 06/30/1998 |
| 5751032 | Color linear charge coupled device and method for driving the same A color linear charge coupled device for an image pickup apparatus includes red, green, and blue photo diode arrays. First, second, third and fourth transfer gates formed in the device move signal charges generated at the photo diode arrays toward first, ... | 05/12/1998 |
| 5716867 | Solid state image sensor Solid state image sensor of an improved charge transfer efficiency, including a first conductive type semiconductor substrate; a plurality of photodiodes each formed on a surface of the first conductive type semiconductor substrate; a second conductive ty... | 02/10/1998 |
| 5703386 | Solid-state image sensing device and its driving method It is an object of the present invention to provide a solid-state image sensing device with a vertical shutter structure allowing the size of the solid-state image sensing device with ease. An electric-charge exhausting unit is provided on the same side of a s... | 12/30/1997 |
| 5684312 | Solid-state imaging device having contact buffer layer interconnecting gate and vertical scan line V-shaped contact buffer layers of polycrystalline silicon are disposed between ring-shaped gate electrodes of thin-film polycrystalline silicon of amplifying pixel transistors and vertical scanning lines. The contact buffer layers and the ring-shaped gate... | 11/04/1997 |
| 5675158 | Linear solid state imaging device with trapizoid type photodiodes A linear solid state imaging device including a substrate (21), a first well (22) of a predetermined junction depth, a second well (23) of a deeper junction than the first well (22), a trapezoid type photodiode area (24) linearly arranged in the first wel... | 10/07/1997 |
| 5668390 | Solid-state image sensor with element isolation region of high impurity concentration and method of manufacturing the same The solid-state image sensor disclosed has a photodiode including a P-type layer provided on a surface of a semi-conductor substrate, an N-type layer provided in the N-type layer, and a P+ -type region which is disposed on a surface of the N-ty... | 09/16/1997 |
| 5637893 | Interline-transfer CCD image sensor and method for fabricating the same A solid-state image sensor has a photodiode region, a vertical CCD register for transferring a charge received at the photodiode region, a read-out gate region for reading the charge out to the vertical CCD register, and an element isolation region for is... | 06/10/1997 |
| 5631702 | Color linear image sensor having a reduced distance between photosensor arrays A color linear image sensor apparatus includes a wiring conductor formed of a first level polysilicon film which is provided on a channel stopper in photocell arrays and which is connected to a first transfer gate electrode of a CCD register. The first tr... | 05/20/1997 |
| 5602407 | Switched CCD electrode photodetector A switched CCD electrode photodetector includes a substrate made of first semi-conductor type, a drain made of a second semi-conductor type formed in the substrate, a collection well made of the second semi-conductor type formed in the substrate, and a sw... | 02/11/1997 |
| 5565374 | Method for fabricating a solid-state image sensing A method for fabricating a solid-state image sensing device wherein a plurality of sensor regions are arranged in two-dimensions. A plurality of vertical transfer lines are associated with respective vertical rows of the plurality of sensor regions to tra... | 10/15/1996 |
| 5532503 | Charge transfer device with multi-line read structure A charge transfer device of two-line read structure is formed with a first charge transfer path for transferring first-group charges, a second charge transfer path for transferring second-group charges, and a transfer gate portion (106). To complete the t... | 07/02/1996 |
| 5523609 | Solid-state image sensing device having a vertical transfer line and a charge transfer region with buffer layer containing hydrogen between light shielding layer and insulating layer A solid-state image sensing device, such as a charge-coupled image sensor, has a plurality of sensor regions arranged in two-dimensions with vertical transfer lines associated with respective vertical rows of the sensor regions for transfer of signal char... | 06/04/1996 |
| 5519207 | Solid-state image pickup device having different structures for image sensing region and optical black region In a solid-state image sensing device in which metallic wirings for supplying drive pulses to every transfer electrodes of vertical CCD registers are provided on the vertical CCD registers, the spacings between the metallic wirings are given mutually diff... | 05/21/1996 |
| 5506434 | Solid-state imaging device having contact buffer layer interconnecting gate and vertical scan line V-shaped contact buffer layers of polycrystalline silicon are disposed between ring-shaped gate electrodes of thin-film polycrystalline silicon of amplifying pixel transistors and vertical scanning lines. The contact buffer layers and the ring-shaped gate... | 04/09/1996 |
| 5504527 | Image sensor with improved charge transfer inefficiency characteristics A CCD image sensor having a linear array of individual imaging photodetecting cells aligned along a scanning line for sensing light information and converting the light information to charge carriers. A CCD shift register, adjacent to the linear array of ... | 04/02/1996 |
| 5426290 | Color linear image sensing device A color linear image sensing device for scanning and sensing an image in a vertical scanning direction and generating signal charges corresponding to the image. The device comprises at least two arrays of a plurality of sets of color sensors disposed in a... | 06/20/1995 |
| 5408113 | High sensitivity improved photoelectric imaging device with a high signal to noise ratio A photoelectric transfer device includes at least one photoelectric transfer cell having the following elements: A photoelectric transfer element generates a photoelectric current based on a quantity of incident light. An amplifier element includes first ... | 04/18/1995 |
| 5379067 | CCD linear sensor and method of reading-out charges therefrom A CCD linear sensor. A photosensor row has photosensitive regions. Read-out gate electrodes and shift registers are formed on opposite sides of the photosensor row. A channel separating region is formed along the center of the photosensor row for separati... | 01/03/1995 |
| 5365093 | Solid-state imaging device with tapered channel regions A solid-state imaging device. An intermediate portion of a channel region have a tapered width from one shift register in which the signal charges to be read-out toward the other shift register. Therefore, the potential distribution of the channel region ... | 11/15/1994 |
| 5309240 | CCD linear image sensor including a CCD shift register on both sides of linearly arranged photosensor cells A CCD linear image sensor comprises an array of linearly arranged photosensor cells, and a pair of CCD shift registers respectively arranged on both sides of the array of linearly arranged photosensor cells. The CCD shift registers are coupled in parallel... | 05/03/1994 |
| 5225694 | One dimensional T.D.I operation solid-state imager A one-dimensional time-delay integration solid-state imager includes a plurality of light-to-electricity conversion parts which store signal charges generated in response to incident light, a vertical CCD corresponding to a series of the light-to-electric... | 07/06/1993 |
| 5220210 | Linear image sensor In a linear image sensor, a circuit region including a number of photosensitive elements is provided at a center zone of the chip in a longitudinal direction of an elongated semiconductor chip. Two groups of bonding pads are locally concentrated in opposi... | 06/15/1993 |
| 5196719 | Solid-state image pick-up device having electric field for accelerating electric charges from photoelectric converting region to shift register A solid-state image pick-up device is fabricated on a p-type semiconductor substrate, and having a plurality of photo-electric converters respectively having n-type impurity regions and formed in a surface portion of the semiconductor substrate at spacing... | 03/23/1993 |
| 5155060 | Method for forming film of uniform thickness on semiconductor substrate having concave portion A photoresist of sufficient thickness to fill a scribe line is applied to an entire substrate. The photoresist is exposed through a photomask having a pattern corresponding to the scribe line and then developed. A photosensitized gelatin is applied by spi... | 10/13/1992 |
| 5135891 | Method for forming film of uniform thickness on semiconductor substrate having concave portion A photoresist of sufficient thickness to fill a scribe line is applied on an entire substrate. Then, the photoresist is exposed through a photomask having a pattern corresponding to the scribe line and is thereafter developed. A photosensitized gelatin is... | 08/04/1992 |
