Did You Know...
...that after Parker Brothers executives turned down the game of Monopoly because it had "52 fundamental errors" (including taking too long to play), a copy of the game wound up in the home of the company president who stayed up until 1 a.m. to finish playing it? He was so impressed by the game that the next day he wrote to inventor Charles Darrow and offered to buy it!
PatentStorm News
Make the Most of Our Site
See this month's Top Inventors and Most Cited Patents.
Stay on top of the latest innovations by subscribing to an RSS feed.
Registered users: Manage your profile.
| Number | Title | Issue Date |
| 7382003 | Solid-state image pick-up unit and method of manufacturing the same A solid-state image pick-up unit comprises: a semiconductor substrate comprising an area in which a photoelectric converting portion is formed; and an electric charge transfer portion that transfers an electric charge formed by the photoelectric converting portion, ... | 06/03/2008 |
| 7224008 | Self-aligned production method for an insulated gate semiconductor device cell and insulated gate semiconductor device cell The invention relates to a manufacturing method for an insulated gate semiconductor device cell, comprising the steps of forming a cell window (3) in a layered structure that is located on top of a semiconductor substrate (1), forming at least one proc... | 05/29/2007 |
| 7193252 | Solid-state imaging device and solid-state imaging device array In a photosensitive part 10, arranged from pixels A aligned in n rows and m columns, supply wiring lines 13a and 13b, which are electrically connected and apply transfer voltages to transfer electrodes 12a to 12 | 03/20/2007 |
| 7180139 | Pixel structure A pixel structure controlled by a scan line and a data line on a substrate is provided. The pixel structure comprises a thin film transistor, a resistance wire, a first pixel electrode, and a second pixel electrode, which are disposed on the substrate. Additionally,... | 02/20/2007 |
| 7102165 | Semiconductor device and manufacturing method thereof A means of forming unevenness for preventing specular reflection of a pixel electrode, without increasing the number of process steps, is provided. In a method of manufacturing a reflecting type liquid crystal display device, the formation of unevenness (having a ra... | 09/05/2006 |
| 6693671 | Fast-dump structure for full-frame image sensors with lod antiblooming structures A structure for a fast-dump gate for charge coupled devices that does not require a separate contact to a drain region instead using the existing drain of a lateral overflow drain (LOD) typically used for antiblooming purposes. LOD structures are typicall... | 02/17/2004 |
| 6683647 | Method for driving solid-state image sensing device A method for driving a CCD solid-state image sensing device. The method is applied to driving the CCD in order to ensure a sufficiently large charge to be handled. In the method, the driving control is performed such that the length of a control interval,... | 01/27/2004 |
| 6680222 | Split-gate virtual-phase CCD image sensor with a diffused lateral overflow anti-blooming drain structure and process of making Generally, and in one form of the invention, a monolithic solid state image-sensing device is disclosed. The device utilizes only a single layer of polysilicon deposition in its fabrication process that is split into two or more phases by very narrow gaps... | 01/20/2004 |
| 6667499 | Solid-state image sensing device and method of manufacturing the same A solid-state image sensing device includes a semiconductor substrate, insulating film, electrode/interconnection, light-shielding film, planarizing film, microlens, and film thickness measuring pattern. The substrate has an image sensing region where ele... | 12/23/2003 |
| 6656664 | Method of forming minute focusing lens The method of forming a minute focusing lens with respect to over a photoactive area of an image sensor such as a CCD or CMOS, comprising: coating a resist film on a flattening layer formed over the photoactive area of the image sensor; exposing the resis... | 12/02/2003 |
| 6627476 | Solid state imaging device and method for manufacturing the same A charge storing layer of a photodiode having an N-type conductivity includes an N+ -type additional implant area in the vicinity of a junction between the charge storing layer and an isolation region. The additional implant area provides an in... | 09/30/2003 |
| 6489179 | Process for fabricating a charge coupled device A monolithic three dimensional charged coupled device (3D-CCD) which utilizes the entire bulk of the semiconductor for charge generation, storage, and transfer. The 3D-CCD provides a vast improvement of current CCD architectures that use only the surface ... | 12/03/2002 |
| 6483132 | Charge coupled device with separate isolation region A charge coupled device including: a substrate; a semiconductor layer overlying the substrate; a semiconductor layer overlying the semiconductor layer; a charge storage layer existing on the semiconductor layer and sandwiched by a pair of isolation region... | 11/19/2002 |
| 6441409 | Dual-line type charge transfer device A charge transfer device which comprises vertical charge transfer devices which transfer charges in the vertical direction, first and second horizontal charge transfer devices which transfer the charges from the vertical charge transfer devices in the hor... | 08/27/2002 |
| 6432738 | Single-layer-electrode type two-phase charge coupled device having smooth charge transfer In a charge coupled device, trap levels formed by insulating layers or floating electrodes are formed on a semiconductor layer or a semiconductor substrate. Stationary charges are trapped in some of the trap levels or floating electrodes. The charge trans... | 08/13/2002 |
| 6403993 | Charge coupled image sensor with u-shaped gates A method and apparatus of forming adjacent, non-overlapping CCD electrodes within an image sensing device such the electrodes are U-shaped. The device provided by the disclosed method employs a substrate with a gate dielectric layer formed on a surface of... | 06/11/2002 |
| 6380005 | Charge transfer device and method for manufacturing the same In a charge transfer device of the two-layer electrode, two-phase drive type, an N-- semiconductor region 108 and a first insulator film 103 are formed on a P-type semiconductor substrate 101 in the named order. Then, first transfer electrodes ... | 04/30/2002 |
| 6335220 | Solid state imaging device with four-phase charge-coupled device and method of manufacturing the same In a high density solid-state imaging device, of four charge transfer electrodes formed on a semiconductor substrate via a gate insulating film, a first electrode, a fourth electrode, and a part of a second electrode are made of a first conductive film, a... | 01/01/2002 |
| 6312970 | Fabrication of CCD type solid state image pickup device having double-structured charge transfer electrodes In a CCD type solid state image pickup device including a semiconductor substrate having photo/electro conversion portions and a first insulating layer formed on the semiconductor substrate, a plurality of charge transfer electrodes are formed on the firs... | 11/06/2001 |
| 6300160 | Process for charge coupled image sensor with U-shaped gates A method and apparatus of forming adjacent, non-overlapping CCD electrodes within an image sensing device such the electrodes are U-shaped. The device provided by the disclosed method employs a substrate with a gate dielectric layer formed on a surface of... | 10/09/2001 |
| 6278142 | Semiconductor image intensifier A charge carrier multiplier is disclosed in which a carrier that passes through a high-field region lying entirely within the depleted semiconductor volume causes a single-step impact ionization without avalanching. By spacing the high-field region suffic... | 08/21/2001 |
| 6252265 | Single-layer-electrode type two-phase charge coupled device having smooth charge transfer In a charge coupled device, trap levels formed by insulating layers or floating electrodes are formed on a semiconductor layer or a semiconductor substrate. Stationary charges are trapped in some of the trap levels or floating electrodes. The charge trans... | 06/26/2001 |
| 6218686 | Charge coupled devices A charge coupled device has a transfer electrode portion having a first gate electrode, a second gate electrode having an end portion partially overlapping an end portion of the first gate electrode, and a third gate electrode having one end portion parti... | 04/17/2001 |
| 6194770 | Photo receptor with reduced noise An improved low voltage, small surface area, high signal-to-noise ratio photo gate includes a layer of photoreceptive semiconductor material having an impurity concentration selected to enhance the formation of hole electron pairs in response to photons i... | 02/27/2001 |
| 6194749 | CCD type solid state image pickup device having double-structured charge transfer electrodes In a CCD type solid state image pickup device including a semiconductor substrate having photo/electro conversion portions and a first insulating layer formed on the semiconductor substrate, a plurality of charge transfer electrodes are formed on the firs... | 02/27/2001 |
| 6165908 | Single-layer-electrode type charge coupled device having double conductive layers for charge transfer electrodes In a charge coupled device, a plurality of charge transfer electrodes are formed on a first insulating layer formed on a semiconductor substrate. Each of the charge transfer electrodes is formed by a first conductive layer and a second conductive layer na... | 12/26/2000 |
| 6136629 | Methods for forming a charge coupled devices including buried transmission gates A charge coupled device includes a substrate, a photoelectric conversion region, a hole accumulation region, a vertical charge coupled region, and a buried transmission gate region. The substrate includes a surface with a light receiving region and a char... | 10/24/2000 |
| 6114718 | Solid state image sensor and its fabrication A dipping in potential well due to direct contact between transfer electrodes and metal wiring causes a drop in transfer efficiency through a CCD register. In order to eliminate or at least reduce the potential dipping, an N- -type impurity lay... | 09/05/2000 |
| 6111279 | CCD type solid state image pick-up device A solid state image pick-up device is disclosed in which potential wells formed between adjacent ones of charge transfer electrodes of a vertical charge transfer portion thereof, formed between adjacent ones of charge transfer electrodes of a horizontal c... | 08/29/2000 |
| 6107124 | Charge coupled device and method of fabricating the same A charge coupled device is disclosed including: a well formed in a substrate, the well having a conductivity opposite to that of the substrate; a first conductivity type of BCCD region formed on the well; a first lightly doped impurity region formed in a ... | 08/22/2000 |
| 6097433 | Solid state imaging apparatus having a plurality of metal wirings for supplying driving pulses to transfer electrodes of vertical CCD registers Shunt wirings (12) in the form of a conductive light intercepting film which covers over vertical CCD registers and also serves to supply power, project into locations between adjacent photoelectric transducers (11) in the vertical direction, and the dist... | 08/01/2000 |
| 6097044 | Charge transfer device and method for manufacturing the same In a charge transfer device of the two-layer electrode, two-phase drive type, an N-- semiconductor region 108 and a first insulator film 103 are formed on a P-type semiconductor substrate 101 in the named order. Then, first transfer electrodes ... | 08/01/2000 |
| 6087685 | Solid-state imaging device A solid-state imaging device includes a plurality of sensor portions, and a vertical shift register corresponding to each of a series of sensor portions. A transfer electrode of the vertical shift register is formed of a first electrode and a second elect... | 07/11/2000 |
| 6087686 | Pixel with buried channel spill well and transfer gate a pixel is formed in a substrate having a first conductivity type, the pixel being coupled to a register for output. The pixel includes a pixel channel of a second conductivity type formed in the substrate, a transfer gate electrode, a storage gate electr... | 07/11/2000 |
| 6069374 | CCD type solid state imaging device A CCD type solid state imaging device including a plurality of vertically arranged light receiving elements, a plurality of vertical charge transfer electrodes associated with the light receiving elements and transfer channels through which signal electri... | 05/30/2000 |
| 6049100 | Solid state image sensor unit with wide dynamic range and high resolution In a solid state image sensor unit which includes a substrate having a substrate surface and a plurality of first semiconductor regions formed on the substrate surface along a predetermined direction of the substrate surface with said first semiconductor ... | 04/11/2000 |
| 6046069 | Solid-state image pick-up device and method for manufacturing the same A solid-state image pick-up device having a structure in which the amount of transferred charges is not reduced in a vertical CCD portion even if a pixel portion is made finer, and a method for manufacturing the solid-state image pick-up device are provid... | 04/04/2000 |
| 6043523 | Charge coupled device and method of fabricating the same A charge coupled device is disclosed including: a well formed in a substrate, the well having a conductivity opposite to that of the substrate; a first conductivity type of BCCD region formed on the well; a first lightly doped impurity region formed in a ... | 03/28/2000 |
| 6028629 | Solid-state imaging device and method of manufacturing the same In a high density solid-state imaging device, of four charge transfer electrodes formed on a semiconductor substrate via a gate insulating film, a first electrode, a fourth electrode, and a part of a second electrode are made of a first conductive film, a... | 02/22/2000 |
| 6018170 | Single-layer-electrode type two-phase charge coupled device having smooth charge transfer In a charge coupled device, trap levels formed by insulating layers or floating electrodes are formed on a semiconductor layer or a semiconductor substrate. Stationary charges are trapped in some of the trap levels or floating electrodes. The charge trans... | 01/25/2000 |
