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| Number | Title | Issue Date |
| 7375417 | NANO IC packaging A package for an integrated circuit includes a chip having a plurality of nodes adapted to receive signals from or to output signals to an external circuit; and a frame having a plurality of contact points each coupled to one node of the chip and to a pad, wherein e... | 05/20/2008 |
| 7294872 | Solid state image pickup device and its manufacture method PROBLEM To provide a high quality solid state image pickup device. SOLUTION Impurities are implanted into a semiconductor substrate to form vertical transfer channels for transferring electric charges in a first direction and to form a drain near each of the vertica... | 11/13/2007 |
| 7115906 | Thin film transistor array and fabricating method thereof A thin film transistor array including a substrate, a plurality of scan lines, a plurality of data lines, a plurality of thin film transistors, an etch barrier layer and a plurality of pixel electrodes is provided. The scan lines and the data lines are disposed over... | 10/03/2006 |
| 6677178 | Semiconductor devices including back-surface-incidence CCD light-sensors, and methods for manufacturing same Methods are disclosed for fabricating any of various semiconductor devices that include a reinforcing substrate bonded to a device substrate, wherein stresses between the two substrates are reduced compared to conventional devices. In the context of a bac... | 01/13/2004 |
| 6649454 | Method for fabricating a charge coupled device A process for forming a portion of a charge coupled device (CCD) is described. More particularly, wells (105) are formed self-aligned under gate stacks (132, 134). By forming wells (105) self-aligned to respective first and second gates (107, 207) of gate... | 11/18/2003 |
| 6649442 | Fast line dump structure for solid state image sensor The present invention is a structure for a fast-dump gate (FDG) and a fast-dump drain (FDD) for a charge coupled device. It is envisioned that the charge coupled device be a horizontal readout register of a solid-state image sensor. This structure uses a ... | 11/18/2003 |
| 6621109 | Charge coupled device with split channeled HCCD A charge coupled device includes a plurality of photoelectric conversion regions; a plurality of vertical charge coupled devices (VCCDs) provided between the photoelectric conversion regions for transmission of charges generated at the photoelectric conve... | 09/16/2003 |
| 6618087 | Solid-state image device In a solid state image device which has at least a horizontal CCD register, the horizontal CCD register is covered with a light shielding film which is formed by a resin material.... | 09/09/2003 |
| 6610972 | System for compensating for chip-to-chip gap widths in a multi-chip photosensitive scanning array In a photosensitive scanning apparatus, in which a plurality of chips are aligned to form a single linear array of photosensors, gaps of unknown width between photosensors on adjacent chips may have an effect on resulting image quality. A set of simple st... | 08/26/2003 |
| 6563149 | Solid-state imaging device Signal charges generated by a plurality of photoelectric conversion elements are transferred to first and second horizontal charge transfer registers via corresponding vertical charge transfer registers. The first and second horizontal charge transfer reg... | 05/13/2003 |
| 6518640 | Solid-state image sensor, production method of the same, and digital camera The present invention provides a solid-state image sensor wherein the color shading is decreased, and/or a solid-state image sensor wherein the shading effect is outstanding. Moreover, the invention provides a digital camera having the solid-state image s... | 02/11/2003 |
| 6507056 | Fast line dump structure for solid state image sensor The present invention is a structure for a fast-dump gate (FDG) and a fast-dump drain (FDD) for a charge coupled device. It is envisioned that the charge coupled device be a horizontal readout register of a solid-state image sensor. This structure uses a ... | 01/14/2003 |
| 6496223 | Solid-state image sensor A solid-state image sensor in which an interface area between a vertical charge coupled device (VCCD) and a horizontal charge coupled device (HCCD) is formed under the HCCD, thereby maximizing charge-transferring efficiency is disclosed, including a subst... | 12/17/2002 |
| 6489642 | Image sensor having improved spectral response uniformity An image sensor, includes a semiconductor substrate; a photosensor having, a first photosensing region including a first stack of one or more layers of transparent materials overlying the substrate, the first photosensing region having a spectral response... | 12/03/2002 |
| 6472653 | Method and apparatus to extend dynamic range of time delay and integrate charge coupled devices A novel method and apparatus is disclosed that is able to extend the intra-scene dynamic range of Time Delay and Integrate Charge-Coupled Device imagers. In accordance with the principles of the invention, the charge collected and accumulated over a plura... | 10/29/2002 |
| 6444968 | CCD imager with separate charge multiplication elements In a CCD imager, a charge is accumulated in pixels of an image area representative of the intensity of incident radiation and is subsequently transferred to a store section and then on a row by row basis to an output register by applying suitable drive pu... | 09/03/2002 |
| 6392260 | Architecture for a tapped CCD array A charge coupled device includes first and second pluralities of column registers and first and second register segments. The first plurality of column registers are splayed with respect to and on one side of a column direction line, and the second plural... | 05/21/2002 |
| 6384436 | Photoelectric transducer and solid-state image sensing device using the same Disclosed is a photoelectric transducer having a photodiode that is formed on a second-conductivity-type well and is composed of a first-conductivity-type region to accumulate signal charge when light is supplied and a first second-conductivity-type regio... | 05/07/2002 |
| 6379993 | Solid-state imaging device with a film of low hydrogen permeability and a method of manufacturing same A semiconductor substrate has a sensor disposed in a surface layer on an entrance surface thereof for receiving incident light, and an intermediate-refractive-index film is disposed on the entire entrance surface of the semiconductor substrate either dire... | 04/30/2002 |
| 6376823 | CCD image sensor A CCD image sensor comprising a VDD terminal, a reset gate for controlling a voltage into which are converted into the VDD terminal, and a bypass portion for bypassing charges branched between the reset gate and the VDD terminal and charged by a CDM.... | 04/23/2002 |
| 6326601 | Optical barrier An optical barrier made of tungsten (W) or titanium-tungsten (TiW). A layer of the optical barrier material is deposited over a transparent layer such as indium tin oxide (ITO). The optical barrier material is then patterned using photolithography process... | 12/04/2001 |
| 6259085 | Fully depleted back illuminated CCD A backside illuminated charge coupled device (CCD) is formed of a relatively thick high resistivity photon sensitive silicon substrate, with frontside electronic circuitry, and an optically transparent backside ohmic contact for applying a backside voltag... | 07/10/2001 |
| 6243135 | Solid state imaging device having overflow drain region A solid state imaging device of the present invention includes a photoelectric convert part, a vertical charge transfer part, a horizontal charge transfer part, an unnecessary charge expelling region. A channel region of the horizontal charge transfer par... | 06/05/2001 |
| 6218211 | Method of fabricating a thinned CCD An integrated circuit device structure comprises a semiconductor plateau containing an active region subjacent its front side, an electrode structure at the front side of the plateau, and an insulating layer surrounding the semiconductor plateau. A front ... | 04/17/2001 |
| 6204506 | Back illuminated photodetector and method of fabricating the same An n-type buried channel, a silicon oxide film, a poly-Si transfer electrode, a PSG film as an insulating interlayer, an aluminum interconnection, and a silicon nitride film are stacked on one surface of a p-type silicon substrate to form a CCD. The other... | 03/20/2001 |
| 6194242 | Fabrication of solid-state imaging device having no transfer error of the signal charge from vertical horizontal charge-transfer section A solid-state imaging device that prevents the transfer errors of the signal charges from vertical charge-transfer sections to a horizontal charge-transfer section. A first plurality of buried channel regions in vertical charge-transfer sections are conne... | 02/27/2001 |
| 6177692 | Solid-state image sensor output MOSFET circuit There is provided a solid-state image sensor including (a) a photoelectric converter which converts light into electric charges, (b) a transfer section which transfers the electric charges, (c) a floating diffusion layer which converts the transferred ele... | 01/23/2001 |
| 6147390 | Solid-state imaging device with film of low hydrogen permeability including openings A semiconductor substrate has a sensor disposed in a surface layer on an entrance surface thereof for receiving incident light, and an intermediate-refractive-index film is disposed on the entire entrance surface of the semiconductor substrate either dire... | 11/14/2000 |
| 6140147 | Method for driving solid-state imaging device A method for driving a solid-state imaging device such as a CCD (Charge Coupled Device) which facilitates control of a blooming suppressing voltage and can reduce a voltage required for shuttering. The solid-state imaging device to be driven typically com... | 10/31/2000 |
| 6133595 | Solid state imaging device with improved ground adhesion layer The solid state imaging device of the present invention comprises a light-shielding layer 13 provided with an opening in a photodiode portion and formed through a ground adhesion layer made of one of titanium nitride and titanium on the substrate 1.... | 10/17/2000 |
| 6114717 | Solid-state imaging device having no transfer error of the signal charges from vertical horizontal charge-transfer section A solid-state imaging device that prevents the transfer errors of the signal charges from vertical charge-transfer sections to a horizontal charge-transfer section. A first plurality of buried channel regions in vertical charge-transfer sections are conne... | 09/05/2000 |
| 6097045 | Semiconductor device having discharging portion A semiconductor device and a fabrication method are disclosed which are capable of preventing a charge-up phenomenon which occurs during a plasma process, and the semiconductor device includes a center portion of a semiconductor device having a passing th... | 08/01/2000 |
| 6090640 | Method of making CCD-type solid-state pickup device A first silicon oxide film, silicon nitride film, and polycrystalline silicon film are formed on the entire surface of a semiconductor substrate. Then, the polycrystalline silicon film is etched to form a first transfer electrode and then, the surface of ... | 07/18/2000 |
| 6072204 | Thinned CCD An integrated circuit device structure comprises a semiconductor plateau containing an active region subjacent its front side, an electrode structure at the front side of the plateau, and an insulating layer surrounding the semiconductor plateau. A front ... | 06/06/2000 |
| 6031259 | Solid state image pickup device and manufacturing method therefor A method for manufacturing a light receiving portion for a solid state image pickup device includes the steps of forming a well of a second impurity type on a substrate of a first impurity type, forming a channel stop within an upper surface of the well, ... | 02/29/2000 |
| 6025585 | Low-resistivity photon-transparent window attached to photo-sensitive silicon detector The invention comprises a combination of a low resistivity, or electrically conducting, silicon layer that is transparent to long or short wavelength photons and is attached to the backside of a photon-sensitive layer of silicon, such as a silicon wafer o... | 02/15/2000 |
| 6013925 | CCD-type solid-state pickup device and its fabrication method A first silicon oxide film, silicon nitride film, and polycrystalline silicon film are formed on the entire surface of a semiconductor substrate. Then, the polycrystalline silicon film is etched to form a first transfer electrode and then, the surface of ... | 01/11/2000 |
| 5990953 | Solid state imaging device having overflow drain region provided in parallel to CCD shift register A solid state imaging device of the present invention includes a photoelectric convert part, a vertical charge transfer part, a horizontal charge transfer part, an unnecessary charge expelling region. A channel region of the horizontal charge transfer par... | 11/23/1999 |
| 5986296 | CCD type semiconductor device The disclosure relates to charge-coupled devices taking the form of shift registers and, more specifically, to those working in the MPP (Multi-Pinned Phase) mode, i.e. with high negative polarisation of the electrodes during the phases of waiting or of in... | 11/16/1999 |
| 5981933 | CCD sensor with diagonal heat conducting straps A CCD structure includes a substrate in which a plurality of buried channels have been formed and a heat conductor disposed transversely to the buried channels and defining a longitudinal direction. A first channel defines a channel direction. The heat co... | 11/09/1999 |
