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| Number | Title | Issue Date |
| 7420231 | Solid state imaging pick-up device and method of manufacturing the same A proper incident state can be obtained in each pixel in accordance with a distance between an optical system and a sensor photoreceptive portion, and improved photoreceptive efficiency and even sensitivity of pixels can be attempted. Since a main light beam ... | 09/02/2008 |
| 7326958 | Solid state imaging device A solid state imaging device includes: a plurality of photoelectric conversion elements which are arranged in a two-dimensional matrix on a semiconductor chip; vertical transfer registers including a vertical transfer channel and vertical transfer electrodes, respec... | 02/05/2008 |
| 7316937 | Method for manufacturing a solid-state image sensing device, such as a CCD Light detecting elements are formed in areas marked off by scribe lines on a semiconductor substrate, and color filters are deposited in such a manner as to cover the formed areas of the light detecting elements, and then an infrared cut-off filter, on which an infr... | 01/08/2008 |
| 7239003 | Isolation techniques for reducing dark current in CMOS image sensors Isolation methods and devices for isolating regions of a semiconductor device. The isolation method and structure include forming an isolating trench in an active area and filling the trench with a doped conductive material containing silicon. Suitable conductive ma... | 07/03/2007 |
| 7193252 | Solid-state imaging device and solid-state imaging device array In a photosensitive part 10, arranged from pixels A aligned in n rows and m columns, supply wiring lines 13a and 13b, which are electrically connected and apply transfer voltages to transfer electrodes 12a to 12 | 03/20/2007 |
| 7157754 | Solid-state imaging device and interline transfer CCD image sensor A high-performance solid-state imaging device is provided. The solid-state imaging device includes: a plurality of pixel cells; and a driving unit. Each of the plurality of pixel cells includes: a photodiode that converts incident light into a signal charge and stor... | 01/02/2007 |
| 7105876 | Reticulated gate CCD pixel with diagonal strapping A sensor includes an array of pixels organized in rows and columns and a plurality of metal busses overlaying the array of pixels. A first column of pixels includes a proximal set of first pixels and a distal set of first pixels separated by a first jog region. A se... | 09/12/2006 |
| 7091530 | High-speed, high-sensitivity charge-coupled device with independent pixel control of charge collection and storage A charge-coupled device imager including an array of super pixels disposed in a semiconductor substrate having a surface that is accessible to incident illumination. For each super pixel there is provided a plurality of subpixels which each correspond to one in the ... | 08/15/2006 |
| 7057302 | Static random access memory A static random access memory has first and second complementary field-effect transistors. The first complementary field-effect transistor includes a semiconductor substrate, a first field-effect transistor of electron conduction type which has a first drain region ... | 06/06/2006 |
| 6690019 | High data rate smart sensor A device for the high-speed analysis of photon- or particle-generated image data or for the high-speed energy-discrimination analysis of photon- or particle-counting data. A sensor collects the photons or particles on an array of solid state detectors, as... | 02/10/2004 |
| 6677628 | Pinned floating photoreceptor with active pixel sensor A pinned photodiode is operated without a transfer gate. This is done by forming a pinned photodiode which has a selective connection to the substrate. When the connection is turned on, the photodiode is pinned to the substrate, and kept at a specified po... | 01/13/2004 |
| 6677998 | Solid-state electronic image sensing device and method of controlling operation of same Subsampling of data is performed at a high subsampling rate in an image sensing device such as a CCD. Signal lines for applying transfer pulses to transfer gates in the device are connected so as to apply gate pulses simultaneously to transfer gates for p... | 01/13/2004 |
| 6656664 | Method of forming minute focusing lens The method of forming a minute focusing lens with respect to over a photoactive area of an image sensor such as a CCD or CMOS, comprising: coating a resist film on a flattening layer formed over the photoactive area of the image sensor; exposing the resis... | 12/02/2003 |
| 6639259 | Charge-coupled device The invention relates to a CCD of the buried-channel type comprising a charge-transport channel in the form of a zone (12) of the first conductivity type, for example the n-type, in a well (13) of the opposite conductivity type, in the example the p-type.... | 10/28/2003 |
| 6621064 | CMOS photodiode having reduced dark current and improved light sensitivity and responsivity A light-sensing diode having improved efficiency due to an extended junction geometry that provides more than one level of interaction with the light input.... | 09/16/2003 |
| 6590238 | Image sensor having a capacitance control gate for improved gain control and eliminating undesired capacitance A charge-coupled device includes a plurality of cells for forming the charge-coupled device, each of the cells capable of retaining charge a transfer mechanism within the charge-coupled device for moving charge through the plurality of cells, an output re... | 07/08/2003 |
| 6388337 | Post-processing a completed semiconductor device A technique for post-processing a conventionally completed semiconductor device having a final passivation layer and bond pads exposed through the final passivation layer. The technique includes forming a protective film over the final passivation layer a... | 05/14/2002 |
| 6259085 | Fully depleted back illuminated CCD A backside illuminated charge coupled device (CCD) is formed of a relatively thick high resistivity photon sensitive silicon substrate, with frontside electronic circuitry, and an optically transparent backside ohmic contact for applying a backside voltag... | 07/10/2001 |
| 6243434 | BCD low noise high sensitivity charge detection amplifier for high performance image sensors The image sensor charge detection amplifier has a charge storage well 60, a charge sensor 32 for sensing charge levels in the charge storage well 60, a charge drain 28 adjacent to the charge storage well 60, and charge transfer structures for transferring... | 06/05/2001 |
| 6174824 | Post-processing a completed semiconductor device A technique for post-processing a conventionally completed semiconductor device having a final passivation layer and bond pads exposed through the final passivation layer. The technique includes forming a protective film over the final passivation layer a... | 01/16/2001 |
| 6157053 | Charge transfer device and method of driving the same There is provided a charge transfer device including (a) a charge transfer channel for transferring signal charges therethrough, (b) a floating diffusion region for accumulating therein charges transferred from the charge transfer channel, (c) a field eff... | 12/05/2000 |
| 6040591 | Solid state imaging device having refractive index adjusting layer and method for making same It is possible to provide a smaller-sized and higher resolution solid-state imaging device by making it possible to adjust a focal position without considerably changing a radius of curvature of a microlens formed on a photosensor portion and without incr... | 03/21/2000 |
| 6018169 | Solid-state image sensor and method of fabricating the same There is provided a solid-state image sensor including a photodetector array in which a plurality of photodetectors are one- or two-dimensionally arranged, each one of the photodetctors including an electrode in a photoelectric conversion region, and tran... | 01/25/2000 |
| 5952714 | Solid-state image sensing apparatus and manufacturing method thereof A lead frame 24 comprising an inner lead 22 and outer lead 23 is sealingly filled from a through-hole into a package 21. A CCD chip 27 is inserted from an inlet 26 into the package 21. An electrode pad 28 is connected to the inner lead 22 via a bump 29 to... | 09/14/1999 |
| 5923061 | CCD charge splitter An apparatus and method of equalizing a first and second charge packet. The apparatus includes a charge splitter for splitting the first charge packet into a third charge packet on the first side of the charge splitter and a fourth charge packet on the se... | 07/13/1999 |
| 5907767 | Backside-illuminated charge-coupled device imager and method for making the same Disclosed is a backside-illuminated charge-coupled device imager, which has: a silicon substrate which includes a light-receiving region which is formed on the frontside of the silicon substrate and includes charge-coupled devices which are arranged one-d... | 05/25/1999 |
| 5904494 | Fabrication process for solid-state image pick-up device with CCD register At first, first transfer electrodes are formed selectively on a semiconductor substrate. Then, the surface of the first transfer electrodes are thermally oxidized at a temperature of 850° to 950° C. to form thermal oxide layers. After depositing a ... | 05/18/1999 |
| 5821750 | CCD magnetic field detecting apparatus A plurality (e.g., an odd number) of CCD shift registers are provided in parallel, and a channel stop separates between the respective adjacent CCD shift registers and is partially cut out in order to make it possible for a carrier which passes through th... | 10/13/1998 |
| 5708282 | CCD charge splitter An apparatus and method of equalizing a first and second charge packet. The apparatus includes a charge splitter for splitting the first charge packet into a third charge packet on the first side of the charge splitter and a fourth charge packet on the se... | 01/13/1998 |
| 5648296 | Post-fabrication repair method for thin film imager devices A thin film electronic imager device has a repaired area between an upper conductive layer and an underlying component in the array in which portions of the upper conductive layer and a dielectric layer have been removed such that the upper conductive lay... | 07/15/1997 |
| 5641973 | Semiconductor piezoelectric photoelectric converting device and imaging device using such semiconductor photoelectric converting device A semiconductor photoelectric converting device and an imaging device using such semiconductor photoelectric converting devices are provided according to the present invention, the semiconductor photoelectric converting device including an electric charge... | 06/24/1997 |
| 5637891 | Charge coupled device having different insulators A charged coupled device structure (CCD) and a method for fabricating the CCD structure, which induces a maximum potential distribution difference by utilizing gate insulation films having different physical properties. The charged coupled device includes... | 06/10/1997 |
| 5623139 | CCD X-ray microdensitometer system A system is disclosed for producing images representing radiation dose distributions in order to verify the radiation dose applied to a target area. The system uses a phantom assembly constructed of material that is the radiological equivalent of live tis... | 04/22/1997 |
| 5614763 | Methods for improving performance and temperature robustness of optical coupling between solid state light sensors and optical systems A high resolution optical coupling device includes optical coupling material bonded to a CCD wafer surface and a fiber optic bundle. The CCD wafer is bonded to a substrate, and a thermal compensation plate is bonded to an opposite face thereof to compensa... | 03/25/1997 |
| 5606187 | Charge coupled device gate structure having narrow effective gaps between gate electrodes A CCD structure including high resolution pixels. The gate electrodes of the CCD are separated by gaps in the order of 0.6 μm which are made to look smaller than their physical size by the use of dielectric filler material in the gaps. The dielectric fil... | 02/25/1997 |
| 5593913 | Method of manufacturing solid state imaging device having high sensitivity and exhibiting high degree of light utilization There are provided a solid state imaging device having high sensitivity and exhibiting high degree of light utilization and a method of manufacturing the same. An insulating film 42, a transfer electrode 43, a light shielding film 44, a protective film 45... | 01/14/1997 |
| 5578842 | Charge coupled device image sensor A charge coupled device (CCD) image sensor and more particularly a wiring of charge transfer electrodes of a CCD image sensor which is made suitable for improving the charge transfer efficiency of vertical charge coupled devices (VCCDs) thereof. The CCD i... | 11/26/1996 |
| 5556803 | Method for fabricating a charge coupled device A charged coupled device structure (CCD) and a method for fabricating the CCD structure, which induces a maximum potential distribution difference by utilizing gate insulation films having different physical properties. The charged coupled device includes... | 09/17/1996 |
| 5546438 | BCD low noise high sensitivity charge detection amplifier for high performance image sensors The image sensor charge detection amplifier has a charge storage well 60, a charge sensor 32 for sensing charge levels in the charge storage well 60, a charge drain 28 adjacent to the charge storage well 60, and charge transfer structures for transferring... | 08/13/1996 |
| 5500572 | High resolution image source Image source, for converting image data in the form of serial charges into a high-resolution imagewise light pattern, includes a CCD emitter having a semiconductor charge-coupled device (CCD) structure for receiving and transferring the charges, a charge ... | 03/19/1996 |
