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| Number | Title | Issue Date |
| 7279770 | Isolation techniques for reducing dark current in CMOS image sensors A structure for isolating areas in a semiconductor device is provided. The structure includes a trench having first and second portions formed in a substrate. The first portion has a first width, and the second portion has a second width and is below the first porti... | 10/09/2007 |
| 7239003 | Isolation techniques for reducing dark current in CMOS image sensors Isolation methods and devices for isolating regions of a semiconductor device. The isolation method and structure include forming an isolating trench in an active area and filling the trench with a doped conductive material containing silicon. Suitable conductive ma... | 07/03/2007 |
| 5677201 | Laminated solid-state image pickup device and a method for manufacturing the same Compatibility of high sensitivity with low remaining images, and low crosstalk can be achieved by a laminated solid-state image pickup device, which includes accumulating portions for accumulating electric signals, reading units for reading the electric s... | 10/14/1997 |
| 4862237 | Solid state image sensor A solid state image sensor including a plurality of sensing cells, each formed of a switching transistor and a thin film sensing device, arranged in a line or a matrix. The switching transistor is a thin film transistor (TFT) of polycrystalline silicon an... | 08/29/1989 |
| 4820929 | Dynamic infrared simulation cell A dynamic infrared simulation cell comprising a photoconductive layer, a first conductive layer, a second conductive layer, and an external energy source. The first conductive layer is affixed about one side of the photoconductive layer and is transmissiv... | 04/11/1989 |
| 4789888 | Solid-state image sensor In a solid-state image sensor of the type consisting of a semiconductor circuit substrate capable of charge transfer or having the switching function and a photoconductive layer or a photosensor, a pattern of light-shielding checks is formed between the s... | 12/06/1988 |
| 4679089 | Solid state image sensor having an anti-blooming isolation electrode An image sensor includes a layer of photosensitive amorphous silicon on one surface of which is a large area common electrode and on the opposite surface of which are an array of spaced discrete electrodes and an isolation electrode which intends in the s... | 07/07/1987 |
| 4670766 | Anti-blooming image sensor A solid-state image sensor is formed of the combination of a semiconductor substrate having a charge transfer function and a photoconductive film. In this solid-state image sensor, blooming suppressing capability is greatly increased by controlling the fo... | 06/02/1987 |
| 4661830 | Solid state imager This invention discloses a high efficiency solid state imager combining a semiconductor substrate having a charge transfer function and a photoelectric conversion film, wherein a high frequency transfer pulse having a frequency higher than that of a verti... | 04/28/1987 |
| 4621275 | Solid-state imaging device A solid-state imaging device comprising a semiconductor circuit substrate having regions for storage and transfer of signal charges, an insulating film formed on the substrate and a photoconductive film. A light shielding member is provided in the insulat... | 11/04/1986 |
| 4500924 | Solid state imaging apparatus A solid state imaging apparatus which includes a plurality of cells formed on a semiconductor substrate and produces a video signal representing an optical image of an object. Each cell comprises a photosensitive first diode, a second diode connected to t... | 02/19/1985 |
| 4462047 | Solid state imager with blooming suppression A solid state imaging apparatus having a plurality of cells for accumulating charge signals in response to an incident light and charge transfer means connected to the cells through a switching element. A read pulse and a transfer pulse are applied to the swit... | 07/24/1984 |
| 4405935 | Solid-state imaging device Disclosed is a solid-state imaging device having a semiconductor integrated circuit in which a plurality of switching elements for selecting positions of picture elements and scanners for turning "on" and "off" the switching elements in time sequence are ... | 09/20/1983 |
| 4381517 | Solid state image sensor A MOSFET consisting of a source region, a drain region and a gate layer is formed on a p-type semiconductor substrate. Field insulation layers are formed to surround the MOSFET, and conductive electrodes are formed thereover. A photosensing layer is overl... | 04/26/1983 |
| 4354104 | Solid-state image pickup device In a solid-state image pickup device of the type in which a photoconductive substance is formed as a photosensor on a scanning device consisting of charge-transfer elements or MOS matrix elements, light shielding means are provided in order to optically s... | 10/12/1982 |
| 4271420 | Solid-state image pickup device In a solid-state image pickup device of the type in which a photosensitive or photoconductive film is formed over a substrate capable of charge-transfer or X-Y address scanning and an electrode is formed over the photosensitive or photoconductive film, a ... | 06/02/1981 |
