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| Number | Title | Issue Date |
| 7385272 | Method and apparatus for removing electrons from CMOS sensor photodetectors An improved CMOS sensor integrated circuit is disclosed, along with methods of making the circuit and computer readable descriptions of the circuit. ... | 06/10/2008 |
| 7378691 | Solid-state image sensor A solid-state image sensor capable of suppressing blooming and increase of a dark current also when an n-type impurity concentration in a transfer channel region is increased is obtained. In this solid-state image sensor, gate electrodes of a prescribed pixel and an... | 05/27/2008 |
| 7279770 | Isolation techniques for reducing dark current in CMOS image sensors A structure for isolating areas in a semiconductor device is provided. The structure includes a trench having first and second portions formed in a substrate. The first portion has a first width, and the second portion has a second width and is below the first porti... | 10/09/2007 |
| 7239003 | Isolation techniques for reducing dark current in CMOS image sensors Isolation methods and devices for isolating regions of a semiconductor device. The isolation method and structure include forming an isolating trench in an active area and filling the trench with a doped conductive material containing silicon. Suitable conductive ma... | 07/03/2007 |
| 6642087 | Solid state imaging device having a photodiode and a MOSFET and method of manufacturing the same A readout gate electrode is selectively formed on a silicon substrate. An N-type drain region is formed at one end of the readout gate electrode, and an N-type signal storage region is formed at the other end thereof. A P+ -type surface shield ... | 11/04/2003 |
| 6633028 | Anti-blooming circuit for CMOS image sensors An improved image sensor constructed from a photodiode and a transimpedance amplifier having an input connected to the photodiode. The present invention utilizes a clamping circuit to prevent the potential at the input of the transimpedance amplifier from... | 10/14/2003 |
| 6580106 | CMOS image sensor with complete pixel reset without kTC noise generation In an image sensing array, the structure of the image sensor pixel is based on a vertical punch through transistor with a junction gate surrounding its source and connected to it, the junction gate being further surrounded by an MOS gate. The new pixel ha... | 06/17/2003 |
| 6169318 | CMOS imager with improved sensitivity An improved pixel design for a CMOS image sensor with a small feature size is described. In conventional image sensors of this type, the quantum efficiency is typically reduced as a result of the decreased thickness of the top n-type layer of the photodio... | 01/02/2001 |
| 6057570 | Solid-state image device A solid-state image device includes a peripheral having a non-volatile memory transistor 4, which is a transistor of the MNOS type, MONOS type or floating gate type, with a structure in which charge is trapped in insulation means below the gate electrode ... | 05/02/2000 |
| 6051447 | Partially pinned photodiode for solid state image sensors A pixelated image sensor having comprising a partially pinned photodiode which is formed a semiconductor of a first conductivity type formed on a surface of the sensor with at least one photodiode formed, within the semiconductor near the surface, the pho... | 04/18/2000 |
| 5881184 | Active pixel sensor with single pixel reset An active pixel image sensing device that provides uniform integration periods and either independent pixel reset, row, pixel reset, or column pixel reset, having a plurality of photodetector elements arranged in a matrix of rows and columns, each of the ... | 03/09/1999 |
| 5872371 | Active pixel sensor with punch-through reset and cross-talk suppression In an active pixel sensor having a plurality of pixels, each of the pixels having a photodetector for accumulating charge from incident light, a transfer gate for removing charge from the photodetector, a floating diffusion that acts as a sense node to an... | 02/16/1999 |
| 5869352 | Method of manufacturing an amplifying solid-state imaging device In an amplifying type solid-state imaging device having a pixel MOS transistor, the occurrence of blooming can be suppressed and an amount of signal charges can be increased. A second conductivity-type overflow-barrier region (23) and a first conductivity... | 02/09/1999 |
| 5831298 | Solid-state imager There is disclosed a solid-state imager for preventing an unwanted potential barrier in the overflow control gate when ions are implanted into the sensor portion. The imager is capable of easily controlling the amount of overflow. The sensor portion takes... | 11/03/1998 |
| 5808333 | Amplifying type solid-state imaging device and method of manufacturing the same In an amplifying type solid-state imaging device having a pixel MOS transistor, the occurrence of blooming can be suppressed and an amount of signal charges can be increased. A second conductivity-type overflow-barrier region (23) and a first conductivity... | 09/15/1998 |
| 5665960 | Photoelectric converter device and method of manufacturing the same A photoelectric converter device having improved residual image characteristics and composed of a transistor having a control electrode region made of a semiconductor of a first conductivity type for accumulating carriers generated by an electromagnetic w... | 09/09/1997 |
| 5648660 | Method and apparatus for reducing noise in a radiation capture device A process and related apparatus for reducing noise due to addressing and switching the detection elements in a radiation detecting panel comprising an array of detection elements. Noise reduction is achieved in two steps, first by the use of a sample and ... | 07/15/1997 |
| 5285091 | Solid state image sensing device A solid state image sensing device has a plurality of photo sensing elements arranged in a two-dimensional fashion at pixel units pixel unit in the horizontal and vertical directions. Each of the plurality of photo sensing elements is formed of a vertical... | 02/08/1994 |
| 4845540 | Imaging devices comprising photodetector elements In an imaging device, photocurrent generated by detector elements (1), e.g. cadmium mercury telluride photodiodes, may be integrated in resettable capacitors (2), and an output signal (S) may be derived by reading the potential of the capacitor (2) at the... | 07/04/1989 |
| 4833515 | Imaging devices comprising photovoltaic detector elements In an imaging device, photocurrent generated by photovoltaic detector elements (1), e.g. cadmium mercury telluride photodiodes, is integrated in resettable capacitors (2), and an output signal (S) is derived by reading the potential of the capacitor (2) a... | 05/23/1989 |
| 4791468 | Radiation-sensitive semiconductor device In a radiation-sensitive semiconductor device, for example a quadrant diode, having several rectifying junctions, the mutual distance between these junctions can be considerably reduced by keeping the junctions cut off by means of circuit elements in such... | 12/13/1988 |
| 4768211 | Solid state photosensitive devices The present invention relates to an improvement to solid state photosensible devices of the type having a charge storing capacitor preceding the charge--voltage conversion stage. The photosensitive device of the invention comprises photosensitive detector... | 08/30/1988 |
| 4667392 | Solid-state image sensor manufacturing process A solid-state image sensor comprises an n-type silicon substrate (11), a p-type silicon layer (12) formed on the substrate (11), a plurality of nMOS transistors (1), a field insulating film (13) for separating the nMOS transistors (1) and a buried insulat... | 05/26/1987 |
| 4628364 | Two-dimensional semiconductor image sensor including an arrangement for reducing blooming A two-dimensional semiconductor image sensor has row lines which are selectable over a vertical shift register for driving first selection transistors of the sensor elements. Column lines are connected to a read-out line by way of first switches which are... | 12/09/1986 |
| 4626915 | MOS solid-state image pickup device having vertical overflow drains A MOS solid-state image pickup device having vertical overflow drains is capable of increasing the dynamic range for the brightness of a scene to be picked up. An electronic still picture camera is constructed by the image pickup device in combination wit... | 12/02/1986 |
| 4611223 | Solid-state image sensor and manufacturing process thereof A solid-state image sensor comprises an n-type silicon substrate (11), a p-type silicon layer (12) formed on the substrate (11), a plurality of nMOS transistors (1), a field insulating film (13) for separating the nMOS transistors (1) and a buried insulat... | 09/09/1986 |
| 4609825 | Device for modulating the sensitivity of a line-transfer photosensitive device In order to modulate the sensitivity of a photosensitive device by modulating the integration time, a first reading of each line of a photosensitive zone of the device is followed by a second reading at an adjustable time interval. The charges resulting f... | 09/02/1986 |
| 4551742 | Solid-state imaging device A solid-state imaging device is provided with picture elements which are each composed of a photoelectric conversion element and a MOS transistor as a switching element and which are arranged in the form of a matrix. A scanning mechanism sequentially scan... | 11/05/1985 |
| 4547957 | Imaging device having improved high temperature performance An imaging device includes a wafer of single crystal semiconductor material having a first surface with an input surfacing region which extends into the wafer from the first surface and a second surface with a charge storage portion which includes a plura... | 10/22/1985 |
| 4527182 | Semiconductor photoelectric converter making excessive charges flow vertically A semiconductor imager comprises a first and a second region (41, 42) which have a conductivity type opposite to a substrate (21) and are reverse biassed relative to the substrate beneath photosensitive regions (22) of each row and a reading device (26, 3... | 07/02/1985 |
| 4488163 | Highly isolated photodetectors An array of photodetectors is described incorporating a PNP vertical structure in a monosilicon substrate with individual photodetectors optically and electrically isolated from one another by open or oxide filled grooves. Both PN junctions of the PNP str... | 12/11/1984 |
| 4450484 | Solid states image sensor array having circuit for suppressing image blooming and smear A solid-state image sensor in which a light signal charge transfer means comprising a metal oxide semiconductor (MOS) vertical shift register and switching elements is provided so that the light signal charge stored in the photoelectric transducer element... | 05/22/1984 |
| 4407010 | Solid state image pickup device A solid state image pickup device having a plurality of solid state elements in a two-dimensional array so as to form picture cells. Each solid state element includes a photoelectric converting element and a switching field effect transistor to permit sca... | 09/27/1983 |
| 4366503 | Solid state image pick-up device and its charge transfer method A solid-state image pick-up device has transfer gates and storage capacitive elements with smaller capacitance than that of a vertical transfer lines between the vertical transfer lines to which signal charge is transferred through the operation of a sign... | 12/28/1982 |
| 4365259 | Radiant energy sensor with reduced optical reflection and blooming A radiant energy sensor is described incorporating a crystalline substrate having a surface suitable for receiving radiant energy and a plurality of detectors for converting radiant energy into electrical signals wherein optical reflections and blooming b... | 12/21/1982 |
| 4358323 | Low cost reduced blooming device and method for making the same An image sensing device includes a wafer having a first input sensing surface region and a second charge storage surface region. A recombination layer extends along the first surface and is spaced therefrom. The method for forming the recombination layer ... | 11/09/1982 |
| 4267469 | Solid-state imaging device having a clamping circuit for drawing out excess charge In a solid-state imaging device having on an identical semiconductor substrate a plurality of photodiodes which are arrayed in two dimensions, vertical and horizontal switching MOSFETs which select the positions of the photodiodes, and vertical and horizo... | 05/12/1981 |
| 4233632 | Solid state image pickup device with suppressed so-called blooming phenomenon A solid state image pickup device includes a matrix array of pn-junction type photo-diodes formed in a monolithic semiconductor substrate, vertical switching FET's of MOS type each connected to the associated photo diode for reading out electric charge st... | 11/11/1980 |
| 4228446 | Reduced blooming device having enhanced quantum efficiency An imaging device such as silicon vidicon has a wafer of single crystal semiconductor material having an input sensing region and a charge storage region. A potential barrier is included for controlling the blooming within the sensing region, and a passiv... | 10/14/1980 |
| 4223330 | Solid-state imaging device In a solid-state imaging device having, in one major surface region of a semiconductor substrate, photoelectric conversion elements which are disposed in a two-dimensional array, vertical switching metal-insulator-semiconductor field effect transistors an... | 09/16/1980 |
