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| Number | Title | Issue Date |
| 7407830 | CMOS image sensor and method of fabrication A CMOS imaging device including a two pixel detection system for red, green, and blue light. One pixel detects red and blue light and another pixel detects green light. The detection of red and blue is based on wavelength and the device is structured such that in th... | 08/05/2008 |
| 7372089 | Solid-state image sensing device A solid-state image sensing device provided with photoelectric conversion films stacked above a semiconductor substrate, comprising: first impurity regions as defined herein; second impurity regions as defined herein; signal charge reading regions as defined herein;... | 05/13/2008 |
| 7365380 | Photoelectric conversion device, method for manufacturing the same and image pickup system An object of the present invention is to provide a photoelectric conversion device, wherein improvement of charge transfer properties when charge is output from a charge storage region and suppression of dark current generation during charge storage are compatible w... | 04/29/2008 |
| 7217983 | Photoelectric conversion film-stacked type solid-state imaging device To provide a solid-state imaging device in which the number of transistors for each signal readout circuit provided in a semiconductor substrate side is reduced and the number of image signal readout lines is reduced, solid-state imaging device a semiconductor subst... | 05/15/2007 |
| 7190012 | Photodiode and method of manufacturing the same A photodiode and a method of manufacturing the photodiode are provided. The method includes forming a diode junction structure including a light receiving unit and an electrode unit on a semiconductor substrate, forming a buffer oxide layer and an etching blocking l... | 03/13/2007 |
| 7154157 | Stacked semiconductor radiation sensors having color component and infrared sensing capability A radiation sensing structure includes red, green and blue photodiodes stacked Above an infrared radiation sensing photodiode. ... | 12/26/2006 |
| 6646318 | Bandgap tuned vertical color imager cell A combination of materials is used to form the photodiodes of a vertical color imager cell. The materials used to form the photodiodes have different band gaps that allow the photon absorption rates of the photodiodes to be adjusted. By adjusting the phot... | 11/11/2003 |
| 6632701 | Vertical color filter detector group and array A vertical color filter detector group according to the present invention is formed on a semiconductor substrate and comprises at least six layers of alternating p-type and n-typed doped regions. PN junctions between the layers operate as photodiodes with... | 10/14/2003 |
| 6606120 | Multiple storage node full color active pixel sensors An active pixel sensor is disposed on a semiconductor substrate of a first conductivity type, and comprises a plurality of semiconductor regions disposed in the substrate, each successive one of the semiconductor regions being enclosed entirely within ano... | 08/12/2003 |
| 6459450 | Infrared filterless pixel structure A pixel structure of an image sensor, the pixel structure for providing sensor signals in response to incident light is provided. The pixel structure includes light selective elements, the light selective elements having predetermined thicknesses to absor... | 10/01/2002 |
| 6379979 | Method of making infrared and visible light detector A photosensitive element may be formed by an upper layer which is sensitive to visible light and a lower layer which is sensitive to infrared radiation. By making the upper device infrared transparent, the upper device can detect visible light while the l... | 04/30/2002 |
| 6373117 | Stacked multiple photosensor structure including independent electrical connections to each photosensor A multiple-photosensor structure. The multiple-photosensor structure includes a substrate. A first photosensor is formed adjacent to the substrate. A first pixel electrode of the first photosensor is electrically connected to the substrate. A first transp... | 04/16/2002 |
| 6198147 | Detecting infrared and visible light A photosensitive element may be formed by an upper layer which is sensitive to visible light and a lower layer which is sensitive to infrared radiation. By making the upper device infrared transparent, the upper device can detect visible light while the l... | 03/06/2001 |
| 6111300 | Multiple color detection elevated pin photo diode active pixel sensor A color detection active pixel sensor. The color detection active pixel sensor includes a substrate. A diode is electrically connected to a first doped region of the substrate. The diode conducts charge when the diode receives photons having a first range... | 08/29/2000 |
| 6103544 | Multiple color infrared detector A multiple color infrared detector is provided which is formed from a photodiode (13), a photoconductor (24), and an insulating layer of material (20) disposed between the photodiode (13) and the photoconductor (24). The photodiode (13) detects infrared r... | 08/15/2000 |
| 6097031 | Dual bandwith bolometer A dual function pixel of an array, having a large fill factor, for detecting visible light and infrared radiation through the same surface area of the pixel. Infrared radiation is absorbed by a conductive oxide layer. This absorbing layer heats up a heat ... | 08/01/2000 |
| 5965875 | Color separation in an active pixel cell imaging array using a triple-well structure A digital imager apparatus uses the differences in absorption length in silicon of light of different wavelengths for color separation. A preferred imaging array is based upon a three-color pixel sensor using a triple-well structure. The array results in ... | 10/12/1999 |
| 5883421 | Photodetector based on buried junctions and a corresponding method of manufacture A photodetector based on buried junctions includes a semiconductor structure with two successive p-n junctions, buried at increasing depths, assembled in pairs in opposition, and defining at least three layers. One of the layers is adjacent to a photosens... | 03/16/1999 |
| 5818051 | Multiple color infrared detector A multiple color infrared detector is provided which is formed from a photodiode (13), a photoconductor (24), and an insulating layer of material (20) disposed between the photodiode (13) and the photoconductor (24). The photodiode (13) detects infrared r... | 10/06/1998 |
| 5767559 | Thin film type photoelectric conversion device A thin-film type photoelectric conversion device for use in an image input unit of facsimile equipment, a scanner and the like, which uses a thin-film semiconductor as a phoconductive layer to reading not only a monochromatic image but also a color image ... | 06/16/1998 |
| 5552603 | Bias and readout for multicolor quantum well detectors A three-color optical detector has independent bias and readout for the colors. The three-color detector includes a substrate and first, second, and third detector layers stacked one on top of another and the substrate. Each detector layer is designed to ... | 09/03/1996 |
| 5162887 | Buried junction photodiode A buried P-N junction photodiode is obtained in LinBiCMOS process with junctions formed between N+DUF diffused region and both first P-EPI layer and second P-EPI layer. Contact to N+DUF diffused region is made by a small area deep N+collector diffusion or... | 11/10/1992 |
| 4438455 | Solid-state color imager with three layer four story structure A solid-state color imager comprised of a solid-state base comprised of a plurality of electrical switching elements arranged in sets of three having superimposed thereon a plurality of photosensor layers which can detect and absorb different colors of li... | 03/20/1984 |
