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| Number | Title | Issue Date |
| 7442994 | CMOS image sensor and method for manufacturing the same A CMOS image sensor and a method for manufacturing the same improve light-receiving efficiency and maintain a margin in the design of a metal line. The CMOS image sensor includes a transparent substrate including an active area having a photodiode region and a trans... | 10/28/2008 |
| 7425743 | Projection television set Thin-film transistors constituting a liquid crystal module have a channel forming region that is a crystal structural body in which a plurality of rod-like or flat-rod-like crystals are arranged in a particular direction. In the thin-film transistors, deteriorations... | 09/16/2008 |
| 7423302 | Pinned photodiode (PPD) pixel with high shutter rejection ratio for snapshot operating CMOS sensor A pixel image sensor has a high shutter rejection ratio that prevents substrate charge leakage to a floating diffusion storage node of the pixel image sensor and prevents generation of photoelectrons within the floating diffusion storage node and storage node contro... | 09/09/2008 |
| 7423295 | Light emitting device and element substrate The invention provides a light emitting device using transistors manufactured by the conventional process while reducing an area occupied by capacitors, whereby variations in luminance of light emitting elements caused by variations in gate voltage Vgs of the transi... | 09/09/2008 |
| 7419844 | Real-time CMOS imager having stacked photodiodes fabricated on SOI wafer A CMOS active pixel sensor includes a silicon-on-insulator substrate having a silicon substrate with an insulator layer formed thereon and a top silicon layer formed on the insulator layer. A stacked pixel sensor cell includes a bottom photodiode fabricated on the s... | 09/02/2008 |
| 7400022 | Photoreceiver cell with color separation A photoreceiver cell with separation of color components of light incident to its surface, formed in a silicon substrate of the conductivity of the first type with an ohmic contact and comprising: the first, second and third regions, which have mutual positioning an... | 07/15/2008 |
| 7364960 | Methods for fabricating solid state image sensor devices having non-planar transistors Methods for fabricating CMOS image sensor devices are provided, wherein active pixel sensors are constructed with non-planar transistors having vertical gate electrodes and channels, which minimize the effects of image lag and dark current. ... | 04/29/2008 |
| 7342268 | CMOS imager with Cu wiring and method of eliminating high reflectivity interfaces therefrom An image sensor and method of fabrication wherein the sensor includes Copper (Cu) metallization levels allowing for incorporation of a thinner interlevel dielectric stack to result in a pixel array exhibiting increased light sensitivity. The image sensor includes st... | 03/11/2008 |
| 7339216 | Vertical color filter sensor group array with full-resolution top layer and lower-resolution lower layer An array of vertical color filter (VCF) sensor groups, optionally including or coupled to circuitry for converting photogenerated carriers produced in the sensors to electrical signals, and methods for reading out any embodiment of the array. The array has a top lay... | 03/04/2008 |
| 7253458 | CMOS image sensor A complementary metal oxide semiconductor field effect transistor (CMOS-FET) image sensor. An active photosensing pixel is formed on a substrate. At least one side of the pixel has a width equal to or less than approximately 3 μm. At least one dielectric layer is d... | 08/07/2007 |
| 7214998 | Complementary metal oxide semiconductor image sensor layout structure A complementary metal oxide semiconductor (CMOS) image sensor layout structure is described. The CMOS image sensor layout structure includes a substrate, a plurality of light sensing devices, a plurality of transistors and a plurality of color-filtering film layers.... | 05/08/2007 |
| 7176544 | Red/green pixel with simultaneous exposure and improved MTF A pixel for detecting red and green light is a single pixel is described. The pixel comprises a deep N well formed in a P type epitaxial substrate. The pixel comprises a deep N well formed in a P type epitaxial substrate. A number of P wells, which are used as the s... | 02/13/2007 |
| 7154157 | Stacked semiconductor radiation sensors having color component and infrared sensing capability A radiation sensing structure includes red, green and blue photodiodes stacked Above an infrared radiation sensing photodiode. ... | 12/26/2006 |
| 6665013 | Active pixel sensor having intra-pixel charge transfer with analog-to-digital converter An imaging device formed as a monolithic complementary metal oxide semiconductor integrated circuit in an industry standard complementary metal oxide semiconductor process, the integrated circuit including a focal plane array of pixel cells, each one of t... | 12/16/2003 |
| 6649948 | Solid-state image sensor of a MOS structure In a MOS type solid-state image sensor having an image pickup area formed at a semiconductor substrate and comprising a two-dimensional array of row and column unit cells including a photoelectric conversion section and signal scanning circuit, a first p ... | 11/18/2003 |
| 6646248 | Photosensitive imaging apparatus sensitive to orange light A photosensitive imaging device for recording images across the entire visible spectrum includes a set of photosensors which have a peak response around the orange part of the spectrum, about 600 nm. The peak response is obtained by combining responses of... | 11/11/2003 |
| 6597398 | Image sensor response enhancement using fluorescent phosphors A method and apparatus is described that is related to image response enhancement of image sensors. In an image sensor, a phosphor layer is placed between the incident photons and the image sensor in which the phosphor layer converts incident photons from... | 07/22/2003 |
| 6486503 | Active pixel sensor array with electronic shuttering An active pixel cell includes electronic shuttering capability. The cell can be "shuttered" to prevent additional charge accumulation. One mode transfers the current charge to a storage node that is blocked against accumulation of optical radiation. The c... | 11/26/2002 |
| 6465803 | Semiconductor hetero-interface photodetector By using wafer fusion, various structures for photodetectors and photodetectors integrated with other electronics can be achieved. The use of silicon as a multiplication region and III--V compounds as an absorption region create photodetectors that are hi... | 10/15/2002 |
| 6376872 | Focusing and color-filtering structure for semiconductor light-sensitive device An improved focusing and color-filtering structure is provided for use in a semiconductor light-sensitive device, such as CMOS (complementary metal-oxide semiconductor) light-sensitive device, that can be used, for example, on a digital camera or a PC cam... | 04/23/2002 |
| 6150683 | CMOS-based color pixel with reduced noise in the blue signal The blue signal of a CMOS-based color pixel is increased with respect to the red and green signals by lowering the doping concentration of the surface regions of the pn-junction photodiodes that are used in the blue imaging cells with respect to the surfa... | 11/21/2000 |
| 6133062 | Method of fabricating focusing and color-filtering structure for semiconductor light-sensitive device An improved focusing and color-filtering structure is provided for use in a semiconductor light-sensitive device, such as CMOS (complementary metal-oxide semiconductor) light-sensitive device, that can be used, for example, on a digital camera or a PC cam... | 10/17/2000 |
| 6133954 | Integrated circuit color chip with cells with integral color filters including triplets of photodiodes with each having integrated therewith transistors for reading from and writing to the photodiode and methods of manufacture and operation thereof A single integrated-circuit color camera chip is color sensitive by grouping closely-adjoining light-detecting cells in a photodiode array into triplets. Each pixel of the sensor includes both a read transistor and a write transistor. Each cells in the tr... | 10/17/2000 |
| 6130441 | Semiconductor hetero-interface photodetector By using wafer fusion, various structures for photodetectors and photodetectors integrated with other electronics can be achieved. The use of silicon as a multiplication region and III-V compounds as an absorption region create photodetectors that are hig... | 10/10/2000 |
| 6127670 | Solid-state color image sensor having an arrangement to compensate for dependence of light sensing characteristics upon color A solid-state color image sensor includes a two-dimensional array of photo-to-electric conversion areas. A color separation filter has segments opposed to the photo-to-electric conversion areas respectively. The color separation filter segments have respe... | 10/03/2000 |
| 6111247 | Passivation protection of sensor devices having a color filter on non-sensor portion A sensor device, an imaging system, and a method of forming a sensor device. The sensor device includes an integrated circuit having a sensor portion and non-sensor portion disposed about the periphery of the sensor portion, a passivation layer overlying ... | 08/29/2000 |
| 6100556 | Method of forming a semiconductor image sensor and structure An image sensor (10) has an image sensing element that includes an N-type conducting region (26) and a P-type pinned layer (37). The two regions form two P-N junctions at different depths that increase the efficiency of charge carrier collection at differ... | 08/08/2000 |
| 6091093 | Photodiode having transparent insulating film around gate islands above p-n junction An embodiment of the invention is directed to a semiconductor photodiode made of a number of gate islands being spaced from each other and electrically insulated from each other by spacers. The spacers are formed above a p-n junction of the photodiode. Th... | 07/18/2000 |
| 6074892 | Semiconductor hetero-interface photodetector By using wafer fusion, various structures for photodetectors and photodetectors integrated with other electronics can be achieved. The use of silicon as a multiplication region and III-V compounds as an absorption region create photodetectors that are hig... | 06/13/2000 |
| 6057586 | Method and apparatus for employing a light shield to modulate pixel color responsivity A method and apparatus for employing a light shield to modulate pixel color responsivity. The improved pixel includes a substrate having a photodiode with a light receiving area. A color filter array material of a first color is disposed above the substra... | 05/02/2000 |
| 6008511 | Solid-state image sensor decreased in shading amount In a solid-state image sensor, first color filters for a first color and associated photodiodes are disposed with a uniform pitch in all pixels in a chip. As to microlenses, however, those in pixels located in a central area of the chip are disposed to su... | 12/28/1999 |
| 5990506 | Active pixel sensors with substantially planarized color filtering elements A semiconductor imaging system preferably having an active pixel sensor array compatible with a CMOS fabrication process. Color-filtering elements such as polymer filters and wavelength-converting phosphors can be integrated with the image sensor.... | 11/23/1999 |
| 5962906 | Structure of a color sensor of a diode A structure color sensor of a diode includes following: Firstly, a color sensor layer including a number of color sensor areas is formed on a substrate for absorbing and sensing the different color light. Then, a black matrix film covered by a transparent... | 10/05/1999 |
| 5945722 | Color active pixel sensor cell with oxide color filter A color active pixel sensor cell is formed by utilizing four photodiodes which are each covered with a layer of oxide. The thicknesses of the layers of oxide are set so that a first layer of oxide prohibits red light from entering the first photodiode, a ... | 08/31/1999 |
| 5929432 | Solid state image sensing device and image sensor using the same In this solid-state image sensing device, pixel sensors for detecting ordinary color image and a pixel sensor for detecting infrared rays recorded as invisible information are formed on the same substrate. A near-infrared ray transmission filter for detec... | 07/27/1999 |
| 5854091 | Method for fabricating color solid-state image sensor A method for fabricating a color solid-state image sensor having a plurality of photoelectric conversion regions includes the steps of respectively forming a magenta color filter layer, a yellow color filter layer, and a cyan color filter layer over three... | 12/29/1998 |
| 5801373 | Solid-state image pickup device having a plurality of photoelectric conversion elements on a common substrate In a solid-state image pickup device this invention, in order to satisfactorily detect optical signals over a wide spectrum range from a visible light range to an invisible light range, a photoelectric conversion element for converting an optical signal i... | 09/01/1998 |
| 5792374 | Method of fabricating a color image sensor from a gray scale image sensor A method of fabricating a color image sensor includes the steps of: (a) providing a gray scale image sensor with an array of photoelectric converting cells and a plurality of bonding pads on a substrate; (b) applying a first transparent layer on surface o... | 08/11/1998 |
| 5731621 | Three band and four band multispectral structures having two simultaneous signal outputs A solid state array has a plurality of radiation detector unit cells, wherein each unit cell includes a bias-selectable two color photodetector in combination with either a second bias-selectable two color detector (10, 11) or a single photodetector (10',... | 03/24/1998 |
| 5677202 | Method for making planar color filter array for image sensors with embedded color filter arrays An image sensor and method of making such sensor is described. The sensor includes an integral color filter array, comprising: a semiconductor substrate having an optically planar top surface; a plurality of spaced image pixels formed in the substrate; an... | 10/14/1997 |
